200 MIL BEO TRANSISTOR Search Results

200 MIL BEO TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

200 MIL BEO TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
AT-64020 Abstract: AT64020 AT-64023 Text: Medium Power Transistors Typical Specifications @ 25°C Case Temperature Part Number VCE (V) P1 dB @ 2 GHz G1 dB @ 2 GHz P1 dB @ 4 GHz G1 dB @ 4 GHz (dBm) (dBm) (dBm) (dBm) AT-64020 16.0 +28 10.0 +27 AT-64023 16.0 +28 12.5 +27 4-20 Package Page No. 6.5 200 mil BeO disk	Original	AT-64020 AT-64023 AT-64020 AT64020 AT-64023	PDF
MRF328 Abstract: MRF243 mrf245 MRF648 MRF463 Motorola transistors MRF648 MRF460 Barnes RM2A Motorola transistors MRF455 Motorola transistors MRF454 Text: Order this document by AN790/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN790 THERMAL RATING OF RF POWER TRANSISTORS Prepared by: Robert J. Johnsen Reliability is of primary concern to many users of transistors. The degree of reliability achieved is controlled by the device user because he determines the stress levels applied by his circuit and	Original	AN790/D AN790 MRF328 MRF243 mrf245 MRF648 MRF463 Motorola transistors MRF648 MRF460 Barnes RM2A Motorola transistors MRF455 Motorola transistors MRF454	PDF
at6400 Abstract: AT-64000-GP4 AT-64000 Text: AT-64000 Up to 4 GHz Linear Power Silicon Bipolar Transistor Chip Data Sheet Description Features The AT-64000 of Avago Technologies is a high performance NPN silicon bipolar transistor. This device is designed for use in medium power, wideband amplifier and oscillator applications operating over VHF, UHF and	Original	AT-64000 AT-64000 AT-64000-GP4 AV01-0274EN AV02-1929EN at6400 AT-64000-GP4	PDF
at 64000 Abstract: at64000 S21E at-64000 Text: AT-64000 Up to 4 GHz Linear Power Silicon Bipolar Transistor Chip Data Sheet Description Features The AT-64000 of Avago Technologies is a high performance NPN silicon bipolar transistor. This device is designed for use in medium power, wideband amplifier and oscillator applications operating over	Original	AT-64000 AT-64000 AT-64000-GP4 AV01-0274EN at 64000 at64000 S21E	PDF
sm 4109 Abstract: .g1 sot23 30533 41410 AT-30533 AT-31011 AT-31033 AT-32011 AT-41511 AT-32063 Text: Silicon Bipolar Transistors Selection Guide NFo and Ga are specified at a low noise bias point, while P1 dB, G1 dB, and \|S21E\|2 are specified at bias points which optimize these parameters. Low Noise Transistors Typical Specifications @ 25°C Case Temperature	Original	AT-30511 OT-143 AT-30533 OT-23 AT-31011 AT-31033 AT-64020 AT-64023 AT-31625 sm 4109 .g1 sot23 30533 41410 AT-30533 AT-31011 AT-31033 AT-32011 AT-41511 AT-32063	PDF
Bipolar Transistors Selection Guide Abstract: transistor G1 MSOP-3 AT-42010 AT-41511 200 mil BeO transistor Text: Silicon Bipolar Transistors Selection Guide NFo and Ga are specified at a low noise bias point, while P1 dB, G1 dB, and \|S21E\|2 are specified at bias points which optimize these parameters. Low Noise Transistors Typical Specifications @ 25°C Case Temperature	Original	AT-30511 AT-30533 AT-31011 AT-31033 AT-32011 AT-32032 AT-32033 AT-32063 AT-41410 AT-41411 Bipolar Transistors Selection Guide transistor G1 MSOP-3 AT-42010 AT-41511 200 mil BeO transistor	PDF
GHZ micro-X Package Abstract: Hewlett-Packard MICRO-X S parameters for ATF 10136 micro-x 200 mil BeO package AT-32032 ATF-13336 ATF-13786 at42010 ATF-10136 Text: Transistor Selection Guide Silicon Bipolar Transistors NFo and Ga are specified at a low noise bias point, while P 1 dB, G1 dB, and \|S 21E\|2 are specified at bias points which optimize these parameters. Low Noise Transistors Typical Specifications @ 25°C Case Temperature	Original	AT-30511 OT-143 OT-23 AT-30533 AT-31011 AT-31033 ATF-45101 ATF-45171 ATF-46101 GHZ micro-X Package Hewlett-Packard MICRO-X S parameters for ATF 10136 micro-x 200 mil BeO package AT-32032 ATF-13336 ATF-13786 at42010 ATF-10136	PDF
AT64020 Abstract: AT-64020 S21E Text: Up to 4 GHz Linear Power Silicon␣ Bipolar Transistor Technical Data AT-64020 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0␣ GHz 26.5 dBm Typical P1 dB at 4.0␣ GHz The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic	Original	AT-64020 AT-64020 AT64020 S21E	PDF
Silicon Bipolar Transistor 35 MICRO-X Abstract: B30V1160 B30V140 Silicon Bipolar Transistor MICRO-X Text: BIPOLARICS, INC. Part Number B30V140 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: DESCRIPTION AND APPLICATIONS: • High Output Power 27.0 dBm, P1dB @ 1.0 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 100 mA t Bipolarics' B30V140 is a high performance, low cost silicon bipolar	Original	B30V140 B30V140 B30V180 B30V1160 Silicon Bipolar Transistor 35 MICRO-X Silicon Bipolar Transistor MICRO-X	PDF
AT-64020 Abstract: S21E Text: Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64020 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic	Original	AT-64020 AT-64020 5965-8915E S21E	PDF
AT-64023 Abstract: S21E Text: Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64023 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic	Original	AT-64023 AT-64023 5965-8916E S21E	PDF
AT-64023 Abstract: S21E Text: AT-64023 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Description Features The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO flange package for good thermal characteristics. This device is designed for	Original	AT-64023 AT-64023 5989-2658EN AV02-1221EN S21E	PDF
AT-64023 Abstract: S21E Text: Up to 4 GHz Linear Power Silicon␣ Bipolar Transistor Technical Data AT-64023 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0␣ GHz 26.5 dBm Typical P1 dB at 4.0␣ GHz The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic	Original	AT-64023 AT-64023 S21E	PDF
AT-64023 Abstract: S21E 156 51 MA2670 Text: AT-64023 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Description Features The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO flange package for good thermal characteristics. This device is designed for	Original	AT-64023 AT-64023 reliaT-64023 5989-2658EN AV02-1221EN S21E 156 51 MA2670	PDF

AT-64020 Abstract: 200 mil BeO package Text: Agilent AT-64020 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Features • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz Description The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic	Original	AT-64020 5965-8915E 5989-2657EN 200 mil BeO package	PDF
AT-64020 Abstract: S21E Silicon Bipolar Transistor 200 mil BeO package npn Text: AT-64020 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Description Features The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO disk package for good thermal characteristics. This device is designed for	Original	AT-64020 AT-64020 5989-2657EN AV02-1220EN S21E Silicon Bipolar Transistor 200 mil BeO package npn	PDF
200 mil BeO package Abstract: RF NPN POWER TRANSISTOR 2.5 GHZ TRANSISTOR 023 AT-64020 data sheet IC 74 IC vhf/uhf Amplifier ic-110 RF NPN POWER TRANSISTOR 3 GHZ RF POWER TRANSISTOR NPN zo 107 Text: AT-64020 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Description Features The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO disk package for good thermal characteristics. This device is designed for use in medium power, wide band amplifier and	Original	AT-64020 AT-64020 5965-8915E 5989-2657EN 200 mil BeO package RF NPN POWER TRANSISTOR 2.5 GHZ TRANSISTOR 023 data sheet IC 74 IC vhf/uhf Amplifier ic-110 RF NPN POWER TRANSISTOR 3 GHZ RF POWER TRANSISTOR NPN zo 107	PDF
Untitled Abstract: No abstract text available Text: Agilent AT-64023 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Features • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz Description The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic	Original	AT-64023 5965-8916E 5989-2658EN	PDF
bipolar transistor s-parameter Abstract: bipolar transistor ghz s-parameter 200 mil BeO package RF NPN POWER TRANSISTOR 2.5 GHZ 20-50-200 TRANSISTOR 12 GHZ RF TRANSISTOR 2.5 GHZ s parameter ic-110 RF POWER TRANSISTOR NPN vhf RF NPN POWER TRANSISTOR 3 GHZ Text: AT-64023 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Description Features The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO flange package for good thermal characteristics. This device is designed	Original	AT-64023 AT-64023 5965-8916E 5989-2658EN bipolar transistor s-parameter bipolar transistor ghz s-parameter 200 mil BeO package RF NPN POWER TRANSISTOR 2.5 GHZ 20-50-200 TRANSISTOR 12 GHZ RF TRANSISTOR 2.5 GHZ s parameter ic-110 RF POWER TRANSISTOR NPN vhf RF NPN POWER TRANSISTOR 3 GHZ	PDF
transistor s11 s12 s21 s22 Abstract: No abstract text available Text: Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64023 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic	Original	AT-64023 AT-64023 5965-8916E transistor s11 s12 s21 s22	PDF
AT-64020 Abstract: No abstract text available Text: AT-64020 Up to 4 GHz Linear Power Silicon Bipolar Transistor W U dI HEW LETT mÜKM PACKARD Features • • • • • 200 mil BeO Package High Output Power: 2B.0 dBm typical Pi dBat 2.0 GHz 27.0 dBm typical Pi dBat 4.0 GHz High Gain at 1 dB Compression:	OCR Scan	AT-64020	PDF
Untitled Abstract: No abstract text available Text: AVANTEK 20E INC D O avantek • • • • • 7 AT-64020 Up to 4 GHz Linear Power Silicon Bipolar Transistor Features • OOO bS Sb Avantek 200 mil BeO Package High Output Power: 28.0 dBm typical Pi dBat 2.0 GHz 27.0 dBm typical Pi dBat 4.0 GHz High Gain at 1 dB Compression:	OCR Scan	AT-64020	PDF
AT-60500 Abstract: AT-01635 AT-21400 AT21400 AT-60586 Text: Silicon Bipolar Transistors Low Noise Transistors Typical Specifications at +25°C Case Temperature Part Number Test Freq. (GHz) NF0 (dB) PldB (dBm) I 21eI2 @ 1.0 GHz (dB) Max. Usable Freq.M (GHz) w* (GHz) AT-41400 AT-60100 AT-60200 AT-60500 2.0 2.0 2.0	OCR Scan	AT-41400 AT-60100 AT-60200 AT-60500 AT-41410 AT-41470 AT-60S10 AT-60S70 AT-41435 AT-41472 AT-01635 AT-21400 AT21400 AT-60586	PDF
Untitled Abstract: No abstract text available Text: What HEWLETT PACKARD Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64023 Features • • • • Description The AT-64023 is a high perfor 27.5 dBm Typical Px^ at 2.0 GHz mance NPN silicon bipolar 26.5 dBm Typical Px ^ at 4.0 GHz transistor housed in a hermetic	OCR Scan	AT-64023 AT-64023 5965-8916E 0017fc	PDF

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200 MIL BEO TRANSISTOR Search Results

200 MIL BEO TRANSISTOR Result Highlights (5)

200 MIL BEO TRANSISTOR Datasheets Context Search

AT-64020

MRF328

at6400

at 64000

sm 4109

Bipolar Transistors Selection Guide

GHZ micro-X Package

AT64020

Silicon Bipolar Transistor 35 MICRO-X

AT-64020

AT-64023

AT-64023

AT-64023

AT-64023

AT-64020

AT-64020

200 mil BeO package

Untitled

bipolar transistor s-parameter

transistor s11 s12 s21 s22

AT-64020

Untitled

AT-60500

Untitled