200 W NPN Search Results

200 W NPN Result Highlights (5)

Part	Manufacturer	Description
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini
2SC5198	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N)

200 W NPN Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: m 2N2894A \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N2894A is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 200 mA lc V 12 V cb P diss 1.2 W @ Tc = 25°C Tj -65 to +200 °C T -65 to +200 °C stg 146 °C/W 0JC CHARACTERISTICS	OCR Scan	2N2894A 2N2894A	PDF
2N929 Abstract: 2N930 BCW60 BCW61 BCX70 BCX71 BCY58 BCY59 BCY72 BFX65 Contextual Info: AF transistors Continued Nr. Maximum ratings ^tot at 'amb = + 4 5°c 7C W mA 1.06) 1000 1.06) 1000 1000 1.06) 1.06) 1000 1.06) 1000 1.06) 1000 0.15 200 200 0.15 0.15 200 200 0.15 0.15 200 200 0.15 0.15 200 0.15 200 200 0.15 0.15 200 200 0.15 200 0.15 200	OCR Scan	BCW60 BCW61 2N930 2N1711 2N929 2N930 BCX70 BCX71 BCY58 BCY59 BCY72 BFX65	PDF
2N3035 Contextual Info: m 2N3035 \ \ SILICON NPN SWITCHING TRANSISTOR DESCRIPTION: The 2N3035 is Designed for Avalanche-Mode Very Fast Switching Applications. MAXIMUM RATINGS lc 200 mA V cb 50 V P diss 1.0 W @ Tc = 25 °C Tj -65 to + 200 °C T stg -65 to + 200 °C 0JC 175 °C/W CHARACTERISTICS	OCR Scan	2N3035 2N3035	PDF
Contextual Info: 2N3227 m \\ SILICON NPN TRANSISTOR DESCRIPTION: The 2N3227 is Designed for General Purpose Low Current Switching Applications MAXIMUM RATINGS 200 mA lc 20 V ce P diss 1.2 W @ Tc = 25 °C Tj -65 °C to +200 °C T -65 °C to +200 °C stg 145 °C/W 0JC STATIC CHARACTERISTICS	OCR Scan	2N3227 2N3227	PDF
2N2894A Abstract: C 2OO transistor Contextual Info: 2N2894A SILICON NPN TRANSISTOR DESCRIPTION: The 2N 2894A is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO - 52 MAXIMUM RATINGS Ie 200 mA Vc b 12 V Pd is s 1.2 W @ Te ! 25°C Tj -65 to +200 °C Ts t g -65 to +200 °C 146 0C/W	OCR Scan	2N2894A 2N2894A C 2OO transistor	PDF
2n3033 Contextual Info: m 2N3033 \ \ SILICON NPN SWITCHING TRANSISTOR DESCRIPTION: The 2N3033 is D esigned fo r A valanche-M ode V ery Fast Switching A pplications. MAXIMUM RATINGS 200 mA lc V 100 V ce P diss 1.0 W @ Tc = 25 °C Tj -65 °C to +200 °C T -65 °C to +200 °C stg 175 °C /W	OCR Scan	2N3033 2N3033	PDF
D40K2 Abstract: T0202 2N7051 D40C7 2N7053 D40K4 2N5307 2N5308 2N6725 Contextual Info: bûE D w Devices V CE0 «ist 2N7051 •e PNP Min 1 20,000 1,000 2N7053 1 2N6725 1 Max 200 200 200 1A 1.5 200 0.2 200 25,000 200 1.0 200 2mA 100 4,000 40,000 500 1.5 1A 2mA 100 60,000 1 10,000 10,000 200 1,000 1.5A 0.3 2N5308 0.3 2N6427 1 200 1,000 1.5A 2,000	OCR Scan	2N7051 T0-92 2N7053 O-226 2N6725 T0-237 D40C7 T0-202 D40K2 D40K2 T0202 2N7051 D40C7 2N7053 D40K4 2N5307 2N5308 2N6725	PDF
TH3L10 Abstract: TK3L10 TH5P4 transistor d 1795 417 TRANSISTOR zener diode 1283 Contextual Info: Darlington T ra n sisto rs Darlington Transistors Bipolartransistors Part l\lo. EIAJ No. Absolute Maximum Ratings VCBO VCEO V ebo lc Ib Pt [V] [V] [V] [A] [A] [W] 100 200 100 100 200 VCEO min 2SD1022 1023 1024 1025 1026 1027 200 200 100 200 200 1349 500	OCR Scan	2SD1022 2SB1282 O-220 TH3L10 3L10Z* TK3L10 TH5P4 transistor d 1795 417 TRANSISTOR zener diode 1283	PDF
Contextual Info: m 2N3253 \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N3253 is Designed as a Core Driver, and Saturated Switch. MAXIMUM RATINGS lc 1.0 A V ce 40 V P diss 5.0 W @ Tc = 25 °C P diss 1.0 W @ T a=25 °C Tj -65 °C to +200 °C T stg -65 °C to +200 °C 0JC 35 °C/W	OCR Scan	2N3253 2N3253	PDF
Contextual Info: m 2N3499 \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N3499 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS lc 300 mA V ce 100 V P diss 5.0 W @ Tc = 25 °C Tj -65 °C to +200 °C T stg -65 °C to +200 °C 0JC 35 °C/W	OCR Scan	2N3499 2N3499	PDF
Contextual Info: m 2N3019 \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N3019 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 1.0 A lc V 80 V ce 5.0 W @ Tc = 25 °C P diss Tj -65 °C to +200 °C T -65 °C to +200 °C stg 16.5 °C/W 0JC	OCR Scan	2N3019 2N3019	PDF
Contextual Info: m 2N3020 \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N3020 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 1.0 A lc V 80 V ce P diss 5.0 W @ Tc = 25 °C Tj -65 °C to +200 °C stg -65 °C to +200 °C T 16.5 °C/W 0JC	OCR Scan	2N3020 2N3020	PDF
Contextual Info: m 2N2219A \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N2219A is Designed for General Purpose Switching and Amplifier Applications. MAXIMUM RATINGS lc 800 mA V ce 40 V 3.0 W @ Tc = 25 °C P diss Tj -65 °C to +200 °C T stg -65 °C to +200 °C 0JC 58.3 °C /W	OCR Scan	2N2219A 2N2219A	PDF
Contextual Info: 2N1052 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)200º V(BR)CBO (V)200 I(C) Max. (A)200m Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)200þ I(CBO) Max. (A)10ux @V(CBO) (V) (Test Condition)200 V(CE)sat Max. (V)5.0 @I(C) (A) (Test Condition)200m	Original	2N1052	PDF

Contextual Info: 2N3501 m \\ SILICON NPN TRANSISTOR DESCRIPTION: The 2N3501 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 300 mA lc V 150 V ce P diss 5.0 W @ T C= 2 5 °C Tj -65 °C to +200 °C T -65 °C to +200 °C stg 35 °C/W 0JC	OCR Scan	2N3501 2N3501	PDF
2n2243 transistor Contextual Info: m 2N2243 \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N2243 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 1.0 A lc PEAK ce 80 V P d is s 2.8 W @ Tc = 25 °C T j -65 °C to +200 °C T stg -65 °C to +200 °C V 62.5 °C/W	OCR Scan	2N2243 2N2243 2n2243 transistor	PDF
Contextual Info: m 2N2243A \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N2243A is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 1.0 A lc PEAK ce 80 V P d is s 2.8 W @ Tc = 25 °C T j -65 °C to +200 °C T stg -65 °C to +200 °C V 62.5 °C/W	OCR Scan	2N2243A 2N2243A	PDF
2N3035 Abstract: TRANSISTOR 2N3035 Contextual Info: 2N3035 SILICON NPN SWITCHING TRANSISTOR DESCRIPTION: The 2N3035 is Designed for Avalanche-Mode Very Fast Switching Applications. PACKAGE STYLE TO-18 MAXIMUM RATINGS Ie 200 mA Vc b 50 V Pd i s s 1.0 W @ Te $ 25 0C Tj -65 to + 200 °C Ts t g -65 to + 200 0C	OCR Scan	2N3035 TRANSISTOR 2N3035	PDF
Funkamateur Abstract: SF128 sf126 SSY20 SU161 SF136 SF137 sf359 132 gd 120 sf358 Contextual Info: Funkam ateur-Tabeilen Halbleiter-Bauelemente aus der DDR-Produktion 1980 Typ P« mW [W] UcBO V U ceO Ic [ U c e r ] mA V [A] hin Bei UCE und Ic mA V [A] MHz Silizium-NF-Transistoren 200 SC 206 SC 207 200 sc 236 200 sc 237 200 200 sc 238 sc 239 200 Silizium-HF-Transistoren	OCR Scan	il21E Funkamateur SF128 sf126 SSY20 SU161 SF136 SF137 sf359 132 gd 120 sf358	PDF
SL307 Abstract: k308 2sc2233 SK305 407D VSL308 2SD2233 2SD870 2SD820 Contextual Info: / A3 V ANI OERLIKON/ SEMICOND 3bE D DEblbMö DOOOD2Q 7 « S E L I - S .1 - 0 \ ! v TELEVISION/VIDEO DEVICES SEM ICONDUCTORS c) High voltage/video amplifiers Maximum Ratings TYPE pd pD Vcbo V ceo W W 1.0 10 0.8 V 300 200 350 245 150 0.8 200 V 250 200 300 180	OCR Scan	D000020 S2N3440 riL8N5413 eyiN5416 7SL305 -02SC1875 /2SC2233 O-3/TO-220 2SD820 2SD868 SL307 k308 2sc2233 SK305 407D VSL308 2SD2233 2SD870	PDF
2N3253 Contextual Info: ÀSII 2N3253 SILICON NPN TRANSISTOR DESCRIPTION: PACKAGE STYLE TO- 39 The 2N3253 is Designed as a Core Driver, and Saturated Switch. MAXIMUM RATINGS Ie 1.0 A V ce 40 V Pdiss 5.0 W @ Te = 25 0C Pdiss 1.0 W @ Ta = 25 0C Tj -65 0C to #200 0C T stg -65 0C to #200 0C	OCR Scan	2N3253 2N3253	PDF
80836 Abstract: MSC80836 msc80 Contextual Info: MSC 80836 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MSC80836 is Designed for Class "C" Amplifier Applications up to 3.5 GHz. PACKAGE STYLE HLP-1 MAXIMUM RATINGS IC 700 mA VCB 45 V PDISS 17 W @ TC = 25 C TJ -65 C to +200 C TSTG -65 C to +200 C θJC 8 C/W	Original	MSC80836 80836 msc80	PDF
Contextual Info: MJ11012 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)30 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m» @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.200	Original	MJ11012	PDF
2N3033 Contextual Info: 2N3033 SILICON NPN SWITCHING TRANSISTOR DESCRIPTION: The 2N3033 is Designed for Avalanche-Mode Very Fast Switching Applications. PACKAGE STYLE TO-18 MAXIMUM RATINGS 200 mA < o m Ie 100 V p d is s 1.0 W @ Te = 25 °C Tj -65 0C to '200 0C Ts t g -65 0C to '200 0C	OCR Scan	2N3033	PDF

200 W NPN Search Results

200 W NPN Result Highlights (5)

200 W NPN Datasheets Context Search

2N929

2N3035

2N2894A

2n3033

D40K2

TH3L10

2n2243 transistor

2N3035

Funkamateur

SL307

2N3253

80836

2N3033