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    MSC80 Search Results

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    MSC80 Price and Stock

    Microchip Technology Inc MSC80806

    RF POWER TRANSISTOR
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    Microchip Technology Inc MSC80205

    RF POWER TRANSISTOR
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    OptiFuse MSC-800MA (ALTERNATE: MSC-800MA)

    Fuse, UL, 5 x 20mm, Glass, Medium, 250V, 800mA | OptiFuse MSC-800mA
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    RS MSC-800MA (ALTERNATE: MSC-800MA) Bulk 16 Weeks 1
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    OptiFuse MSC-800MA

    5 x 20 mm FUSE GLASS BODY-MEDIUM TIME-DELAY-(N. AMER. STD) - 800mA Bussmann Cross GMC-800mA
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    Microsemi Corporation MSC80205

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    Bristol Electronics MSC80205 200
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    MSC80 Datasheets (38)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MSC8001 Advanced Semiconductor High Power GaAs FET Original PDF
    MSC8004 Advanced Semiconductor Transistor Original PDF
    MSC80058 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    MSC80064 Advanced Power Technology RF & MICROWAVE TRANSISTOR GENERAL PURPOSE LINEAR APPLICATIONS Original PDF
    MSC80064 Advanced Power Technology RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS Original PDF
    MSC80064 Microsemi Bipolar/LDMOS Transistor Original PDF
    MSC80064 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MSC80064 STMicroelectronics RF & Microwave Components Data Book 1993 Scan PDF
    MSC80064 Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    MSC80091 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    MSC80111 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    MSC80118 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    MSC80183 Advanced Semiconductor Transistor Original PDF
    MSC80185 STMicroelectronics GENERAL PURPOSE LINEAR APPLICATIONS RF & MICROWAVE TRANSISTORS Original PDF
    MSC80185 STMicroelectronics RF & Microwave Components Data Book 1993 Scan PDF
    MSC80186 STMicroelectronics GENERAL PURPOSE LINEAR APPLICATIONS RF & MICROWAVE TRANSISTORS Original PDF
    MSC80186 STMicroelectronics RF & Microwave Components Data Book 1993 Scan PDF
    MSC80195 STMicroelectronics GENERAL PURPOSE LINEAR APPLICATIONS RF & MICROWAVE TRANSISTORS Original PDF
    MSC80195 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MSC80195 STMicroelectronics RF & Microwave Components Data Book 1993 Scan PDF

    MSC80 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MSC80185

    Abstract: S027
    Text: MSC80185 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS . . . . EMITTER BALLASTED CLASS A LINEAR OPERATION COMMON EMITTER VSWR CAPABILITY 20:1 @ RATED CONDITIONS ft 3.2 GHz TYPICAL NOISE FIGURE 12.0 dB @ 2 GHz POUT = 28 dBm MIN. @ 2.0 GHz


    Original     		PDF MSC80185 MSC80185 S027

    MagnaChip Semiconductor

    Abstract: MAGNACHIP rule MSC800A
    Text: MagnaChip Semiconductor Library Team MSC800A Description MSC800A library is 0.8-micron cell based library which support 2LM. MSC800A library is one of the LibraPassport Cell-Based Libraries of Avant!. This library is high density and high performance low-power 3.3V


    Original     		PDF MSC800A MSC800A MagnaChip Semiconductor MAGNACHIP rule

    MSC80914

    Abstract: No abstract text available
    Text: MSC80914 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI MSC80914 is Designed for Class C, Common Base General Purpose Applications to 2.3 GHz. A ØD B .060 x 45° CHAMFER C E FEATURES INCLUDE: G • Gold Metalization • Site Emitter Ballasting


    Original     		PDF MSC80914 MSC80914

    MSC80064

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MSC80064 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS Features • • • • • 2.0 GHz CLASS A LINEAR OPERATION 20:1 VSWR CAPABILITY @ RATED CONDITIONS


    Original     		PDF MSC80064 MSC80064

    Untitled

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MSC80064 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS Features • • • • • 2.0 GHz CLASS A LINEAR OPERATION 20:1 VSWR CAPABILITY @ RATED CONDITIONS


    Original     		PDF MSC80064 MSC80064 JunctioS11

    MSC80185

    Abstract: S027
    Text: MSC80185 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS . . . . EMITTER BALLASTED CLASS A LINEAR OPERATION COMMON EMITTER VSWR CAPABILITY 20:1 @ RATED CONDITIONS ft 3.2 GHz TYPICAL NOISE FIGURE 12.0 dB @ 2 GHz P OUT = 28 dBm MIN. @ 2.0 GHz


    Original     		PDF MSC80185 MSC80185 S027

    MSC80196

    Abstract: No abstract text available
    Text: MSC80196 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .250 2L FLG DESCRIPTION: A The ASI MSC80196 is Designed for Class A Linear Applications up to 2.0 GHz. ØD B .060 x 45° CHAMFER C E FEATURES: G • Class A Operation • PG = 7.0 dB at 1.0 W/2.0 GHz • Omnigold Metalization System


    Original     		PDF MSC80196 MSC80196

    MSC80917

    Abstract: No abstract text available
    Text: MSC80917 NPN SILICON RF MICROWAVE TRANSISTOR PACKAGE STYLE .280 2L FL B DESCRIPTION: The ASI MSC80917 is low level Class-C, Common Base Device Designed for IFF, DME driver Applications. 2 1 3 FEATURES INCLUDE: • Omnigold Metalization System • POUT 4.0 W Min.


    Original     		PDF MSC80917 MSC80917

    MSC80916

    Abstract: No abstract text available
    Text: MSC80916 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .280 2L FLG The ASI MSC80916 is Designed for pulsed systems in 1025-1150 MHz band. FEATURES: • Class A Operation • PG = 7.0 dB at 1.0 W/2.0 GHz • Omnigold Metalization System • Input matching network


    Original     		PDF MSC80916 MSC80916 102Metalization

    MSC8004

    Abstract: No abstract text available
    Text: MSC8004 HIGH POWER GaAs FET FET PACKAGE TYPE 30 FEATURES INCLUDE: • High Output Power: P1dB = 1.6 W TYP @ 12 GHz • High power gain: GLP = 5 dB (TYP) @ 12 GHz • High power added efficiency: Hadd = 18% (TYP) @ 12 GHz APPLICATIONS: • S to Ku Band Power Amplifiers


    Original     		PDF MSC8004 MSC8004

    OF IC 317

    Abstract: MSC80197 317 6 pin information
    Text: MSC80197 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS . . . . EMITTER BALLASTED CLASS A LINEAR OPERATION COMMON EMITTER VSWR CAPABILITY 15:1 @ RATED CONDITIONS ft 3.2 GHz TYPICAL NOISE FIGURE 12.5 dB @ 2 GHz P OUT = 31.7 dBm MIN. @ 2.0 GHz


    Original     		PDF MSC80197 MSC80197 OF IC 317 317 6 pin information

    MSC80185

    Abstract: MSC80186 S027
    Text: MSC80186 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS . . . . EMITTER BALLASTED CLASS A LINEAR OPERATION COMMON EMITTER VSWR CAPABILITY 15:1 @ RATED CONDITIONS ft 3.2 GHz TYPICAL NOISE FIGURE 12.5 dB @ 2 GHz POUT = 30.0 dBm MIN. .230 4L STUD S027


    Original     		PDF MSC80186 MSC80185 MSC80186 S027

    80196

    Abstract: MSC80196
    Text: MSC80196 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS . . . . EMITTER BALLASTED CLASS A LINEAR OPERATION COMMON EMITTER VSWR CAPABILITY 15:1 @ RATED CONDITIONS ft 3.2 GHz TYPICAL NOISE FIGURE 12.5 dB @ 2 GHz POUT = 30.0 dBm MIN. .250 2LFL S011


    Original     		PDF MSC80196 MSC80196 80196

    MSC80614

    Abstract: TACAN
    Text: MSC80614 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 2L FLG DESCRIPTION: The ASI MSC80614 is designed for Class C, DME/TACAN Applications up to 1150 MHz. 2 3 1 FEATURES INCLUDE: • OmnigoldTM Metalization system • Input Matching network • Emitter Ballasting


    Original     		PDF MSC80614 MSC80614 TACAN

    MSC80195

    Abstract: 80195 MSC80
    Text: MSC80195 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS . . . . EMITTER BALLASTED CLASS A LINEAR OPERATION COMMON EMITTER VSWR CAPABILITY 20:1 @ RATED CONDITIONS ft 3.2 GHz TYPICAL NOISE FIGURE 12.0 dB @ 2 GHz P OUT = 28 dBm MIN. @ 2.0 GHz


    Original     		PDF MSC80195 MSC80195 80195 MSC80

    transistor s11 s12 s21 s22

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MSC80064 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS Features • • • • • 2.0 GHz CLASS A LINEAR OPERATION 20:1 VSWR CAPABILITY @ RATED CONDITIONS


    Original     		PDF MSC80064 MSC80064 transistor s11 s12 s21 s22

    MSC80834

    Abstract: GP 458
    Text: MSC 80834 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MSC80834 is Designed for Class "C" Amplifier Applications up to 3.5 GHz. PACKAGE STYLE HLP-1 MAXIMUM RATINGS IC 250 mA VCB 45 V PDISS 5.0 W @ TC = 25 C TJ -65 C to +200 C TSTG -65 C to +200 C θJC


    Original     		PDF MSC80834 GP 458

    MSC80806

    Abstract: No abstract text available
    Text: MSC80806 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MSC80806 is Designed for General Purpose Class A, Common Emitter Applications in the 500 MHz to 2.0 GHz Frequency Range. FEATURES INCLUDE: PACKAGE STYLE .280" 4L STUDLESS • Gold Metalization • Emitter Ballasting


    Original     		PDF MSC80806 MSC80806

    MSC80195

    Abstract: 80195
    Text: MSC80195 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS . . . . EMITTER BALLASTED CLASS A LINEAR OPERATION COMMON EMITTER VSWR CAPABILITY 20:1 @ RATED CONDITIONS ft 3.2 GHz TYPICAL NOISE FIGURE 12.0 dB @ 2 GHz POUT = 28 dBm MIN. @ 2.0 GHz


    Original     		PDF MSC80195 MSC80195 80195

    OF IC 317

    Abstract: MSC80197
    Text: MSC80197 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS . . . . EMITTER BALLASTED CLASS A LINEAR OPERATION COMMON EMITTER VSWR CAPABILITY 15:1 @ RATED CONDITIONS ft 3.2 GHz TYPICAL NOISE FIGURE 12.5 dB @ 2 GHz POUT = 31.7 dBm MIN. @ 2.0 GHz


    Original     		PDF MSC80197 MSC80197 OF IC 317

    MSC80278

    Abstract: No abstract text available
    Text: MSC80278 NPN RF TRANSISTOR DESCRIPTION: The ASI MSC80278 is a Silicon NPN Microwave Transistor Supplied in a Common Emitter Package, Designed for linear Applications. PACKAGE 250 2L FLG FEATURES: • • • Emitter Ballasted Gold Metallization Hermetically sealed Package


    Original     		PDF MSC80278 MSC80278

    21-030-J

    Abstract: No abstract text available
    Text: Sfï SGS-1H0MS0N MSC80196 \u RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS EMITTER BALLASTED CLASS A LINEAR OPERATION COMMON EMITTER VSWR CAPABILITY 15:1 @ RATED CONDITIONS ft 3.2 GHz TYPICAL NOISE FIGURE 12.5 dB @ 2 GHz P out = 30.0 dBm MIN.


    OCR Scan     		PDF MSC80196 MSC80196 S96184 015-H---NO. 21-030-J 21-030-J

    sealectro matrix

    Abstract: sealectro
    Text: SGS-1H0MS0N 5 1 . MSC80195 IH[ RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS EMITTER BALLASTED CLASS A LINEAR OPERATION COMMON EMITTER VSWR CAPABILITY 20:1 @ RATED CONDITIONS ft 3.2 GHz TYPICAL NOISE FIGURE 12.0 dB @ 2 GHz P o u t = 28 dBm MIN. @ 2.0 GHz


    OCR Scan     		PDF MSC80195 MSC80195 2-030J J135C2IC 7T2T237 sealectro matrix sealectro

    Untitled

    Abstract: No abstract text available
    Text: U fi SGS-THOMSON IlLiêTMOtêi MSC80185 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS . • • . EMITTER BALLASTED CLASS A LINEAR OPERATION COMMON EMITTER VSWR CAPABILITY 20:1 @ RATED CONDITIONS . ft 3.2 GHz TYPICAL . NOISE FIGURE 12.0 dB @ 2 GHz


    OCR Scan     		PDF MSC80185 MSC80185 2-030J J135023F