Untitled
Abstract: No abstract text available
Text: SPECIFICATION • Supplier : Samsung electro-mechanics Samsung P/N : CL21A106KPFN3NE Product : Multi-layer Ceramic Capacitor Description : CAP, 10㎌, 10V, ±10%, X5R, 0805 A. Samsung Part Number ① Series CL 21 A 106 K P F N 3 N E ① ② ③
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CL21A106KPFN3NE
2000ea)
12/-0hrs
48/-0hrs
10sec.
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1N60C
Abstract: *1N60C
Text: FQN1N0C N-Channel QFET MOSFET 00 V, 0.3 A, 11.5 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce
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FQN1N60C
1N60C
*1N60C
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1N50C
Abstract: FQN1N50C
Text: FQN1N50C N-Channel QFET MOSFET 500 V, 0.38 A, 6 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce
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FQN1N50C
FQN1N50C
1N50C
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LG Innotek
Abstract: VF 0.1v
Text: Indicator Features Colorless transparency lens type. 5mm T-1 ¾ all plastic mold type. High luminosity. ESD Class based on Human Body Model(HBM) : 950V Absolute Maximum Ratings (Ta=25℃) ± Outline Drawing Item Symbol Value Unit Power Dissipation
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2000EA
LG Innotek
VF 0.1v
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Untitled
Abstract: No abstract text available
Text: 0.4mm Pitch SERIES 5805 SUPER MICRO CONNECTORS 0.4mm Pitch BtoB H=1.0mm ●プラグ Plug 注文コード/Ordering Code Part No. 14 5805 xxx X00x X829+ 0:金具無し ボス無し Without the anchor metal or the boss 1:金具無し ボス有り
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QUANTITY2000ea/reel
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JEDEC TO-252 LAND PATTERN
Abstract: No abstract text available
Text: Liteon Semiconductor Corporation LSP1084 5A Low Dropout Linear Regulator GENERAL DESCRIPTION FEATURES The LSP1084 is a series of low dropout three-terminal regulators with a dropout of 1.5V at 5A output current. The LSP1084 series provides current limiting and
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LSP1084
LSP1084
O-252
51TYP.
020TYP.
JEDEC TO-252 LAND PATTERN
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TMS320C54x, instruction set
Abstract: TMS320C541 TMS320C542 TMS320C548 TMS320C549 EXORCISER
Text: TMS320C54x Assembly Language Tools User’s Guide 1997 Digital Signal Processing Products Printed in U.S.A., January 1997 2617677-9761 revision D SPRU102B User’s Guide TMS320C54x Assembly Language Tools 1997 TMS320C54x Assembly Language Tools User’s Guide
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TMS320C54x
SPRU102B
TMS320C54x
TMS320C54x, instruction set
TMS320C541
TMS320C542
TMS320C548
TMS320C549
EXORCISER
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1N60C
Abstract: FQN1N60CTA 11N60C D 92 M - 03 DIODE
Text: FQN1N60C 600V N-Channel MOSFET Features Description • 0.3 A, 600 V, RDS on = 11.5 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQN1N60C
FQN1N60C
O-92-3
FQN1N60CBU
FQN1N60CTA
1N60C
11N60C
D 92 M - 03 DIODE
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TMS320C549
Abstract: q notations for tms320c54x TMS320C54x, instruction set tektronix 463 F495 LA 76810 OR EQUALANT LNK500 spru131 TMS320C548 TMS320C541
Text: TMS320C54x Assembly Language Tools User’s Guide Literature Number: SPRU102B Manufacturing Part Number: 2617677-9761 revision D January 1997 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any
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TMS320C54x
SPRU102B
Index-15
xref500
Index-16
TMS320C549
q notations for tms320c54x
TMS320C54x, instruction set
tektronix 463
F495
LA 76810 OR EQUALANT
LNK500
spru131
TMS320C548
TMS320C541
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Untitled
Abstract: No abstract text available
Text: QFET FQN1N50C 500V N-Channel MOSFET Features Description • 0.38 A, 500 V, RDS on = 6.0 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQN1N50C
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1N60C
Abstract: FQN1N60C
Text: FQN1N60C 600V N-Channel MOSFET Features Description • 0.3 A, 600 V, RDS on = 11.5 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQN1N60C
1N60C
FQN1N60C
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Untitled
Abstract: No abstract text available
Text: FQN1N60C 600V N-Channel MOSFET Features Description 0.3 A, 600 V, RDS on = 11.5 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQN1N60C
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1084 TO-252
Abstract: 1084-VV
Text: Liteon Semiconductor Corporation LSP1084 5A Low Dropout Linear Regulator GENERAL DESCRIPTION FEATURES The LSP1084 is a series of low dropout three-terminal regulators with a dropout of 1.5V at 5A output current. The LSP1084 series provides current limiting and
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LSP1084
LSP1084
O-252
51TYP.
020TYP.
1084 TO-252
1084-VV
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1N50C
Abstract: FQN1N50C FQN1N50
Text: QFET FQN1N50C 500V N-Channel MOSFET Features Description • 0.38 A, 500 V, RDS on = 6.0 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQN1N50C
1N50C
FQN1N50C
FQN1N50
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TMS320C54x, instruction set
Abstract: TMS320C541 TMS320C542 TMS320C548 TMS320C549 HEX500 EXORCISER motorola
Text: TMS320C54x Assembly Language Tools User’s Guide 1997 Digital Signal Processing Products Printed in U.S.A., January 1997 SDS SPRU102B User’s Guide TMS320C54x Assembly Language Tools 1997 TMS320C54x Assembly Language Tools User’s Guide Literature Number: SPRU102B
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TMS320C54x
SPRU102B
TMS320C54x
TMS320C54x, instruction set
TMS320C541
TMS320C542
TMS320C548
TMS320C549
HEX500
EXORCISER motorola
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Untitled
Abstract: No abstract text available
Text: 【CFS Series】 Carbon Film Resistor •Features -SMD style carbon resistor -Free direction for mounting due to cylindrical design -High solder ability due to specially plated electrodes -Electrodes strength is higher than flat chip resistors -Lower current noise than thick film flat chip resistors
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1000pcs)
180mm/7ã
JIS-C-5201-1
9-Apr-2013
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1N50C
Abstract: 11n50c FQN1N50CTA FQN1N50CBU
Text: QFET FQN1N50C 500V N-Channel MOSFET Features Description • 0.38 A, 500 V, RDS on = 6.0 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQN1N50C
FQN1N50C
FQN1N50CBU
FQN1N50CTA
1N50C
11n50c
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1N60C
Abstract: FQN1N60C
Text: FQN1N60C 600V N-Channel MOSFET Features Description • 0.3 A, 600 V, RDS on = 11.5 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQN1N60C
FQN1N60C
1N60C
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CSR0207
Abstract: viking CSR viking csr0204 CSR0204 R050 RESISTOR r100 resistor class b viking
Text: Metal Film Precision Resistor-CSR Series Features -Advanced thin film technology. -Excellent overall stability: Class 0.25. -Force fitted steel caps, tin plated on nickel barrier. -Pure Sn termination on Ni barrier layer. -Compatible with lead Pb -free and lead containing soldering processes.
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45minutes
MIL-STD-202F
RCWV701
CSR0207
viking CSR
viking csr0204
CSR0204
R050 RESISTOR
r100 resistor
class b viking
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5801
Abstract: No abstract text available
Text: 0.4mm Pitch SERIES 5801 SUPER MICRO CONNECTORS 0.4mmPitch BtoB H=0.8mm ●プラグ Plug 注文コード/Ordering Code Part No. 14 5801 xxx X00x X829+ 2:金具有り ボス無し With the anchor metal, without the boss 3:金具有り ボス有り With the anchor metal and the boss
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QUANTITY2000ea/reel
5801
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Untitled
Abstract: No abstract text available
Text: Indicator Features Colorless transparency lens type. 5mm T-1 ¾ all plastic mold type. High luminosity. ESD Class based on Human Body Model(HBM) : 950V Absolute Maximum Ratings (Ta=25℃) ± Outline Drawing (Unit:mm) ± ± ± ± ± Item Symbol
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2000EA
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8 pin zif connector 0.3mm FPC
Abstract: elco 120 pin 90 PIN ELCO Connector DCN-312
Text: 12.0 in h- 2.0 4.0 01.5 r r I r-5 CD u "Yw. 5? i i 1*- F < SECT.F-F DATUM PIN SECT.E-E REEL DIMENSION 8 | 7 6 5 NO. PART NO. DESCRIPTION QTY MATERIAL REMARKS DRW NO. 1 CONNECTOR 2 EMBOSSED TAPE 1 POLYSTYRENE 3 TOP COVER TAPE 1 POLYSTYRENE 4 REEL 1 CORRGATED CARDBOARD or POLYSTYRENE
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200mmMiN.
2000ea
8 pin zif connector 0.3mm FPC
elco 120 pin
90 PIN ELCO Connector
DCN-312
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