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    2000EA Search Results

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    2000EA Price and Stock

    Siargo Limited FS5001L-2000-E-A

    MASS FLOW SENSOR
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    DigiKey FS5001L-2000-E-A Bulk 1
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    Bridgelux Inc BXEB-TL-L0570A-2750G2000-E-A3

    VESTA EDGE LED MODULE, 570 MM, 2
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    DigiKey BXEB-TL-L0570A-2750G2000-E-A3 Tray 390
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    EBV Elektronik BXEB-TL-L0570A-2750G2000-E-A3 8 Weeks 390
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    Bridgelux Inc BXEB-TL-L0570A-2765G2000-E-A3

    VESTA EDGE LED MODULE, 570 MM, 2
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    DigiKey BXEB-TL-L0570A-2765G2000-E-A3 Tray 390
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    Bridgelux Inc BXEB-TL-L0570A-2765E2000-E-A3

    VESTA EDGE LED MODULE, 570 MM, 2
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    Bridgelux Inc BXEB-TL-L0570A-2750E2000-E-A3

    VESTA EDGE LED MODULE, 570 MM, 2
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    DigiKey BXEB-TL-L0570A-2750E2000-E-A3 Tray 390
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    Newark BXEB-TL-L0570A-2750E2000-E-A3 Bulk 390
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    2000EA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SPECIFICATION • Supplier : Samsung electro-mechanics  Samsung P/N : CL21A106KPFN3NE  Product : Multi-layer Ceramic Capacitor  Description : CAP, 10㎌, 10V, ±10%, X5R, 0805 A. Samsung Part Number ① Series CL 21 A 106 K P F N 3 N E ① ② ③


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    PDF CL21A106KPFN3NE 2000ea) 12/-0hrs 48/-0hrs 10sec.

    1N60C

    Abstract: *1N60C
    Text: FQN1N0C N-Channel QFET MOSFET 00 V, 0.3 A, 11.5 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


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    PDF FQN1N60C 1N60C *1N60C

    1N50C

    Abstract: FQN1N50C
    Text: FQN1N50C N-Channel QFET MOSFET 500 V, 0.38 A, 6 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


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    PDF FQN1N50C FQN1N50C 1N50C

    LG Innotek

    Abstract: VF 0.1v
    Text: Indicator Features ƒ Colorless transparency lens type. ƒ 5mm T-1 ¾ all plastic mold type. ƒ High luminosity. ƒ ESD Class based on Human Body Model(HBM) : 950V Absolute Maximum Ratings (Ta=25℃) ± Outline Drawing Item Symbol Value Unit Power Dissipation


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    PDF 2000EA LG Innotek VF 0.1v

    Untitled

    Abstract: No abstract text available
    Text: 0.4mm Pitch SERIES 5805 SUPER MICRO CONNECTORS 0.4mm Pitch BtoB H=1.0mm ●プラグ Plug 注文コード/Ordering Code Part No. 14 5805 xxx X00x X829+ 0:金具無し ボス無し Without the anchor metal or the boss 1:金具無し ボス有り


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    PDF QUANTITY2000ea/reel

    JEDEC TO-252 LAND PATTERN

    Abstract: No abstract text available
    Text: Liteon Semiconductor Corporation LSP1084 5A Low Dropout Linear Regulator GENERAL DESCRIPTION FEATURES The LSP1084 is a series of low dropout three-terminal regulators with a dropout of 1.5V at 5A output current. The LSP1084 series provides current limiting and


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    PDF LSP1084 LSP1084 O-252 51TYP. 020TYP. JEDEC TO-252 LAND PATTERN

    TMS320C54x, instruction set

    Abstract: TMS320C541 TMS320C542 TMS320C548 TMS320C549 EXORCISER
    Text: TMS320C54x Assembly Language Tools User’s Guide 1997 Digital Signal Processing Products Printed in U.S.A., January 1997 2617677-9761 revision D SPRU102B User’s Guide TMS320C54x Assembly Language Tools 1997 TMS320C54x Assembly Language Tools User’s Guide


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    PDF TMS320C54x SPRU102B TMS320C54x TMS320C54x, instruction set TMS320C541 TMS320C542 TMS320C548 TMS320C549 EXORCISER

    1N60C

    Abstract: FQN1N60CTA 11N60C D 92 M - 03 DIODE
    Text: FQN1N60C 600V N-Channel MOSFET Features Description • 0.3 A, 600 V, RDS on = 11.5 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    PDF FQN1N60C FQN1N60C O-92-3 FQN1N60CBU FQN1N60CTA 1N60C 11N60C D 92 M - 03 DIODE

    TMS320C549

    Abstract: q notations for tms320c54x TMS320C54x, instruction set tektronix 463 F495 LA 76810 OR EQUALANT LNK500 spru131 TMS320C548 TMS320C541
    Text: TMS320C54x Assembly Language Tools User’s Guide Literature Number: SPRU102B Manufacturing Part Number: 2617677-9761 revision D January 1997 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any


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    PDF TMS320C54x SPRU102B Index-15 xref500 Index-16 TMS320C549 q notations for tms320c54x TMS320C54x, instruction set tektronix 463 F495 LA 76810 OR EQUALANT LNK500 spru131 TMS320C548 TMS320C541

    Untitled

    Abstract: No abstract text available
    Text: QFET FQN1N50C 500V N-Channel MOSFET Features Description • 0.38 A, 500 V, RDS on = 6.0 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    PDF FQN1N50C

    1N60C

    Abstract: FQN1N60C
    Text: FQN1N60C 600V N-Channel MOSFET Features Description • 0.3 A, 600 V, RDS on = 11.5 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    PDF FQN1N60C 1N60C FQN1N60C

    Untitled

    Abstract: No abstract text available
    Text: FQN1N60C 600V N-Channel MOSFET Features Description • 0.3 A, 600 V, RDS on = 11.5 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    PDF FQN1N60C

    1084 TO-252

    Abstract: 1084-VV
    Text: Liteon Semiconductor Corporation LSP1084 5A Low Dropout Linear Regulator GENERAL DESCRIPTION FEATURES The LSP1084 is a series of low dropout three-terminal regulators with a dropout of 1.5V at 5A output current. The LSP1084 series provides current limiting and


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    PDF LSP1084 LSP1084 O-252 51TYP. 020TYP. 1084 TO-252 1084-VV

    1N50C

    Abstract: FQN1N50C FQN1N50
    Text: QFET FQN1N50C 500V N-Channel MOSFET Features Description • 0.38 A, 500 V, RDS on = 6.0 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    PDF FQN1N50C 1N50C FQN1N50C FQN1N50

    TMS320C54x, instruction set

    Abstract: TMS320C541 TMS320C542 TMS320C548 TMS320C549 HEX500 EXORCISER motorola
    Text: TMS320C54x Assembly Language Tools User’s Guide 1997 Digital Signal Processing Products Printed in U.S.A., January 1997 SDS SPRU102B User’s Guide TMS320C54x Assembly Language Tools 1997 TMS320C54x Assembly Language Tools User’s Guide Literature Number: SPRU102B


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    PDF TMS320C54x SPRU102B TMS320C54x TMS320C54x, instruction set TMS320C541 TMS320C542 TMS320C548 TMS320C549 HEX500 EXORCISER motorola

    Untitled

    Abstract: No abstract text available
    Text: 【CFS Series】 Carbon Film Resistor •Features -SMD style carbon resistor -Free direction for mounting due to cylindrical design -High solder ability due to specially plated electrodes -Electrodes strength is higher than flat chip resistors -Lower current noise than thick film flat chip resistors


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    PDF 1000pcs) 180mm/7ã JIS-C-5201-1 9-Apr-2013

    1N50C

    Abstract: 11n50c FQN1N50CTA FQN1N50CBU
    Text: QFET FQN1N50C 500V N-Channel MOSFET Features Description • 0.38 A, 500 V, RDS on = 6.0 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    PDF FQN1N50C FQN1N50C FQN1N50CBU FQN1N50CTA 1N50C 11n50c

    1N60C

    Abstract: FQN1N60C
    Text: FQN1N60C 600V N-Channel MOSFET Features Description • 0.3 A, 600 V, RDS on = 11.5 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    PDF FQN1N60C FQN1N60C 1N60C

    CSR0207

    Abstract: viking CSR viking csr0204 CSR0204 R050 RESISTOR r100 resistor class b viking
    Text: Metal Film Precision Resistor-CSR Series Features -Advanced thin film technology. -Excellent overall stability: Class 0.25. -Force fitted steel caps, tin plated on nickel barrier. -Pure Sn termination on Ni barrier layer. -Compatible with lead Pb -free and lead containing soldering processes.


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    PDF 45minutes MIL-STD-202F RCWV701 CSR0207 viking CSR viking csr0204 CSR0204 R050 RESISTOR r100 resistor class b viking

    5801

    Abstract: No abstract text available
    Text: 0.4mm Pitch SERIES 5801 SUPER MICRO CONNECTORS 0.4mmPitch BtoB H=0.8mm ●プラグ Plug 注文コード/Ordering Code Part No. 14 5801 xxx X00x X829+ 2:金具有り ボス無し With the anchor metal, without the boss 3:金具有り ボス有り With the anchor metal and the boss


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    PDF QUANTITY2000ea/reel 5801

    Untitled

    Abstract: No abstract text available
    Text: Indicator Features ƒ Colorless transparency lens type. ƒ 5mm T-1 ¾ all plastic mold type. ƒ High luminosity. ƒ ESD Class based on Human Body Model(HBM) : 950V Absolute Maximum Ratings (Ta=25℃) ± Outline Drawing (Unit:mm) ± ± ± ± ± Item Symbol


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    PDF 2000EA

    8 pin zif connector 0.3mm FPC

    Abstract: elco 120 pin 90 PIN ELCO Connector DCN-312
    Text: 12.0 in h- 2.0 4.0 01.5 r r I r-5 CD u "Yw. 5? i i 1*- F < SECT.F-F DATUM PIN SECT.E-E REEL DIMENSION 8 | 7 6 5 NO. PART NO. DESCRIPTION QTY MATERIAL REMARKS DRW NO. 1 CONNECTOR 2 EMBOSSED TAPE 1 POLYSTYRENE 3 TOP COVER TAPE 1 POLYSTYRENE 4 REEL 1 CORRGATED CARDBOARD or POLYSTYRENE


    OCR Scan
    PDF 200mmMiN. 2000ea 8 pin zif connector 0.3mm FPC elco 120 pin 90 PIN ELCO Connector DCN-312