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    2008.07.28 Search Results

    2008.07.28 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPN12008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 26 A, 0.0123 Ohm@10V, TSON Advance Visit Toshiba Electronic Devices & Storage Corporation
    20083EB0BD Amphenol Communications Solutions Elite Backplane connectors, DO 8pair, 12position, NiS Visit Amphenol Communications Solutions
    HPH2-0083LD Coilcraft Inc General Purpose Inductor, 8.3uH, 10%, 1 Element, Ferrite-Core, SMD, ROHS COMPLIANT Visit Coilcraft Inc
    HP2-0083LB Coilcraft Inc General Purpose Inductor, 4.1uH, 10%, 1 Element, Ferrite-Core, SMD, ROHS COMPLIANT Visit Coilcraft Inc
    HP2-0083LD Coilcraft Inc General Purpose Inductor, 4.1uH, 10%, 1 Element, Ferrite-Core, SMD, ROHS COMPLIANT Visit Coilcraft Inc
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    2008.07.28 Price and Stock

    HARTING Technology Group 09120080728

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    DigiKey 09120080728 Bulk 10
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    Newark 09120080728 Bulk 10
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    RS 09120080728 Bulk 11 Weeks 10
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    • 10 $23.3
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    TME 09120080728 8 1
    • 1 $13.32
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    2008.07.28 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 3VD250600YL 3VD250600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD250600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. 11 ¾ Advanced termination scheme to provide enhanced 3


    Original     		PDF 3VD250600YL 3VD250600YL O-251

    Untitled

    Abstract: No abstract text available
    Text: 2SB075030MLJL 2SB075030MLJL SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION ¾ 2SB075030MLJL is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; ¾ Low power losses, high efficiency; ¾ Guard ring construction for transient protection;


    Original     		PDF 2SB075030MLJL 2SB075030MLJL

    2n60 MOSFEt

    Abstract: 2N60 2008.07.28 2n60 equivalent mosfet Vds 30 Vgs 25
    Text: 3VD250600YL 3VD250600YL 高压MOSFET芯片 描述 ¾ 3VD250600YL为采用硅外延工艺制造的N沟道 增强型600V高压MOS功率场效应晶体管； ¾ 先进的高压分压终止环结构； 11 ¾ 较高的雪崩能量； 3 ¾ 漏源二极管恢复时间快；


    Original     		PDF 3VD250600YL 3VD250600YL 3VD250600YLN 600VMOS O-251 600VVGS 10VID 30VVDS 2n60 MOSFEt 2N60 2008.07.28 2n60 equivalent mosfet Vds 30 Vgs 25

    Untitled

    Abstract: No abstract text available
    Text: 3VD396500YL 3VD396500YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD396500YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; ¾ Advanced termination scheme to provide enhanced voltage-blocking capability;


    Original     		PDF 3VD396500YL 3VD396500YL O-220