chopper transformer
Abstract: FMD 40-06KC welding transformer
Text: FMD 40-06KC Advanced Technical Information HiPerFETTM CoolMOS 1 Power MOSFETs ID25 = 38 A VDSS = 600 V Ω RDSon = 60 mΩ -Boost Chopper Topologyin ISOPLUS i4-PACTM 3 1 4 1 5 2 Features MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings
|
Original
|
PDF
|
40-06KC
20080526a
chopper transformer
FMD 40-06KC
welding transformer
|
45n80c
Abstract: E72873 IXKN45N80C
Text: IXKN 45N80C CoolMOS 1 Power MOSFET VDSS = 800 V ID25 = 44 A RDS on) max = 74 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET miniBLOC, SOT-227 B D S G G S E72873 S G = Gate S = Source D = Drain S D Either source terminal at miniBLOC can be used
|
Original
|
PDF
|
45N80C
OT-227
E72873
20080526a
45n80c
E72873
IXKN45N80C
|
Untitled
Abstract: No abstract text available
Text: IXKN 45N80C CoolMOS 1 Power MOSFET VDSS = 800 V ID25 = 44 A RDS on) max = 74 m N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET D miniBLOC, SOT-227 B S G G S E72873 S G = Gate S = Source D = Drain S D Either source terminal at miniBLOC can be used
|
Original
|
PDF
|
45N80C
OT-227
E72873
20080526a
|
25N80C
Abstract: 25n80 E72873 mosfet b4
Text: IXKC 25N80C CoolMOS 1 Power MOSFET ISOPLUSTM Package ID25 = 25 A VDSS = 800 V RDS on) max = 150 mΩ N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface D ISOPLUS220 G G D q S S isolated back surface E72873 Features
|
Original
|
PDF
|
25N80C
ISOPLUS220
E72873
20080526a
25N80C
25n80
E72873
mosfet b4
|
25N80C
Abstract: "VDSS 800V" mosfet ISOPLUS247 25n80
Text: IXKR 25N80C Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 25 A VDSS = 800 V RDS on) = 125 mW in ISOPLUS247™ Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base ISOPLUS 247™ D G E153432
|
Original
|
PDF
|
25N80C
125mW
ISOPLUS247TM
247TM
E153432
20080526a
25N80C
"VDSS 800V" mosfet
ISOPLUS247
25n80
|
25n8
Abstract: No abstract text available
Text: IXKC 25N80C CoolMOS 1 Power MOSFET ISOPLUSTM Package ID25 = 25 A VDSS = 800 V RDS on) max = 150 m N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface D ISOPLUS220 G G D fl S S isolated back surface E72873 Features
|
Original
|
PDF
|
25N80C
ISOPLUS220
E72873
0080526a
20080526a
25n8
|
Untitled
Abstract: No abstract text available
Text: IXKR 25N80C Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 25 A VDSS = 800 V RDS on) = 125 mW in ISOPLUS247™ Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base ISOPLUS 247™ D G G E53432
|
Original
|
PDF
|
25N80C
ISOPLUS247â
E153432
20080526a
|
ultra low power mosfet fast switching
Abstract: MOSFET and parallel Schottky diode 40N60SCD1 E72873
Text: IXKF 40N60SCD1 CoolMOS 1 Power MOSFET ID25 VDSS RDSon typ. trr with Series Schottky Diode and Ultra Fast Antiparallel Diode = = = = 38 A 600 V Ω 60 mΩ 70 ns in High Voltage ISOPLUS i4-PAC™ Preliminary data 5 DS DF 1 T 2 1 5 E72873 2 Features MOSFET T
|
Original
|
PDF
|
40N60SCD1
E72873
20080526a
ultra low power mosfet fast switching
MOSFET and parallel Schottky diode
40N60SCD1
E72873
|