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    25N8 Search Results

    25N8 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SiT1602BC-22-25N-8.192000 SiTime 3.57 to 77.76 MHz, Low Power Oscillator Datasheet
    SiT1602BC-81-25N-8.192000 SiTime 3.57 to 77.76 MHz, Low Power Oscillator Datasheet
    SiT1602BI-33-25N-8.192000 SiTime 3.57 to 77.76 MHz, Low Power Oscillator Datasheet
    SiT1602BI-83-25N-8.192000 SiTime 3.57 to 77.76 MHz, Low Power Oscillator Datasheet
    SiT8008BI-21-25N-8.000000 SiTime 1 to 110 MHz, Low Power Oscillator Datasheet
    SF Impression Pixel

    25N8 Price and Stock

    Microchip Technology Inc DN3525N8-G

    MOSFET N-CH 250V 360MA TO243AA
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    Microchip Technology Inc DN3525N8-G 127,000
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    Microchip Technology Inc CL25N8-G

    IC LED DRVR LINEAR 25MA TO243AA
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    Microchip Technology Inc TN5325N8-G

    MOSFET N-CH 250V 316MA TO243AA
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    Microchip Technology Inc TN2425N8-G

    MOSFET N-CH 250V 480MA SOT89-3
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    STMicroelectronics STP25N80K5

    MOSFET N-CH 800V 19.5A TO220
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    Find more 25N8 price and stock on Findchips.com

    25N8 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CoolMOS Power Transistor

    Abstract: POWER MOSFET 4600 UPS SIEMENS 25N80C
    Text: Power MOSFET ISOPLUS220TM IXKC 25N80C Electrically Isolated Back Surface Low RDS on , High Voltage, CoolMOSTM Superjunction MOSFET VDSS = 800 V ID25 = 20 A Ω RDS(on) = 150 mΩ Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF ISOPLUS220TM 25N80C E153432 065B1 728B1 123B1 CoolMOS Power Transistor POWER MOSFET 4600 UPS SIEMENS 25N80C

    Untitled

    Abstract: No abstract text available
    Text: Power MOSFET ISOPLUS220TM IXKC 25N80C Electrically Isolated Back Surface Low RDS on , High Voltage, CoolMOSTM Superjunction MOSFET VDSS = 800 V = 25 A ID25 Ω RDS(on) = 150 mΩ Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF ISOPLUS220TM 25N80C ISOPLUS220LV 728B1 065B1 123B1

    25N80C

    Abstract: No abstract text available
    Text: IXKC 25N80C COOLMOS * Power MOSFET ISOPLUSTM Package ID25 = 25 A VDSS = 800 V RDS on max = 150 mΩ N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface ISOPLUS220 D G G D S S E72873 Features MOSFET Symbol Conditions


    Original     		PDF 25N80C ISOPLUS220 E72873 25N80C

    27N80

    Abstract: 25n80 IXFK27N80 IXFN27N80 125OC
    Text: Not for New Designs VDSS HiPerFETTM Power MOSFETs IXFK IXFK IXFN IXFN N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 27N80 25N80 27N80 25N80 800 800 800 800 ID25 V V V V RDS on 27 A 25 A 27 A 25 A 0.30 0.35 0.30 0.35 Ω Ω Ω Ω TO-264 AA (IXFK)


    Original     		PDF 27N80 25N80 O-264 27N80 25N80 IXFK27N80 IXFN27N80 125OC

    IXKR25N80C

    Abstract: No abstract text available
    Text: IXKR 25N80C Advanced Technical Information COOLMOS * Power MOSFET ID25 = 25 A VDSS = 800 V RDS on = 125 mW in ISOPLUS247TM Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base ISOPLUS 247TM D * G E153432


    Original     		PDF 25N80C 125mW 247TM ISOPLUS247TM E153432 ISOPLUS247 O-247 IXKR25N80C

    CoolMOS Power Transistor

    Abstract: ISOPLUS247 IXKR25N80C
    Text: Advanced Technical Information VDSS CoolMOS Power MOSFET in ISOPLUS247TM Package RDS on 25 A 125 mΩ Ω 800 V IXKR 25N80C N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base ID25 D G *) S ISOPLUS 247TM E153432


    Original     		PDF ISOPLUS247TM 25N80C 247TM E153432 CoolMOS Power Transistor ISOPLUS247 IXKR25N80C

    power switching

    Abstract: ISO264 ISO264TM ID90
    Text: ADVANCE TECHNICAL INFORMATION CoolMOSTM Power MOSFET IXKG 25N80C ISO264TM Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VGS Continuous ±20


    Original     		PDF 25N80C ISO264TM 728B1 065B1 123B1 power switching ISO264 ISO264TM ID90

    25N80C

    Abstract: 25n80 E72873 mosfet b4
    Text: IXKC 25N80C CoolMOS 1 Power MOSFET ISOPLUSTM Package ID25 = 25 A VDSS = 800 V RDS on) max = 150 mΩ N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface D ISOPLUS220 G G D q S S isolated back surface E72873 Features


    Original     		PDF 25N80C ISOPLUS220 E72873 20080526a 25N80C 25n80 E72873 mosfet b4

    27N80

    Abstract: 25n80 IXFN27N80 IXFK27N80 125OC
    Text: HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol IXFK 27N80 IXFK 25N80 IXFN 27N80 IXFN 25N80 Test Conditions VDSS TJ = 25°C to 150°C 800 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 800 800 V VGS Continuous ±20


    Original     		PDF 27N80 25N80 O-264 27N80 25n80 IXFN27N80 IXFK27N80 125OC

    25N80C

    Abstract: "VDSS 800V" mosfet ISOPLUS247 25n80
    Text: IXKR 25N80C Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 25 A VDSS = 800 V RDS on) = 125 mW in ISOPLUS247™ Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base ISOPLUS 247™ D G E153432


    Original     		PDF 25N80C 125mW ISOPLUS247TM 247TM E153432 20080526a 25N80C "VDSS 800V" mosfet ISOPLUS247 25n80

    25n8

    Abstract: No abstract text available
    Text: IXKC 25N80C CoolMOS 1 Power MOSFET ISOPLUSTM Package ID25 = 25 A VDSS = 800 V RDS on) max = 150 m N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface D ISOPLUS220 G G D fl S S isolated back surface E72873 Features


    Original     		PDF 25N80C ISOPLUS220 E72873 0080526a 20080526a 25n8

    27N80

    Abstract: U/25/20/TN26/15/850/25N80
    Text: Not for New Designs VDSS HiPerFETTM Power MOSFETs IXFK IXFK IXFN IXFN N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 27N80 25N80 27N80 25N80 800 800 800 800 ID25 V V V V RDS on 27 A 25 A 27 A 25 A 0.30 0.35 0.30 0.35 Ω Ω Ω Ω TO-264 AA (IXFK)


    Original     		PDF 27N80 25N80 O-264 27N80 25N80 U/25/20/TN26/15/850/25N80

    Untitled

    Abstract: No abstract text available
    Text: IXKR 25N80C Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 25 A VDSS = 800 V RDS on) = 125 mW in ISOPLUS247™ Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base ISOPLUS 247™ D G G E53432


    Original     		PDF 25N80C ISOPLUS247â E153432 20080526a

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE TECHNICAL INFORMATION CoolMOS Power MOSFET ISOPLUS220TM IXKC 25N80C Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VGS Continuous


    Original     		PDF ISOPLUS220TM 25N80C 220TM

    Untitled

    Abstract: No abstract text available
    Text: 25N80K5, 25N80K5, 25N80K5, 25N80K5 N-channel 800 V, 0.19 Ω typ., 19.5 A SuperMESH 5 Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packages Datasheet − production data Features TAB Order codes 3 3 1 1 D2PAK 2 VDS @ TJmax RDS on max ID


    Original     		PDF STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5 O-220FP, O-220 O-247 STB25N80K5 O-220FP STF25N80K5

    C1162

    Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158

    M27N80

    Abstract: No abstract text available
    Text: VDSS HiPerFET Power MOSFETs IXFK 27N80 IXFK 25N80 IXFN 27N80 IXFN 25N80 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 800 V 800 V 800 V 800 V D DS on ^D25 27 25 27 25 A A A A 0.30 0.35 0.30 0.35 a £2 £2 ß TO-264 AA (IXFK) Symbol Test Conditions


    OCR Scan     		PDF 27N80 25N80 25N80 O-264 UL94V-0, M27N80

    IXFK27N80

    Abstract: IXFN27N80
    Text: nixYs v DSS HiPerFET Power MOSFETs IXFK 27N80 IXFK 25N80 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFN 27N80 IXFN 25N80 800 800 800 800 V V V V p ^D25 27 A 25 A 27 A 25 A DS on 0.30 0.35 0.30 0.35 a Q £2 a TO-264 AA (IXFK) Symbol


    OCR Scan     		PDF IXFK27N80 IXFK25N80 IXFN27N80 IXFN25N80 O-264 to150 27N80 25N80

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS VDSS HiPerFET Power MOSFETs 27N80 IXFK 25N80 IXFN 27N80 IXFN 25N80 ix f k N-Channel Enhancement Mode AvalancheRated, High dv/dt, Lowtrr 800 800 800 800 V V V V D ^D25 27 25 27 25 A A A A D S o n 0.30 0.35 0.30 0.35 Q Q Q Q TO -264A A (IX FK )


    OCR Scan     		PDF 27N80 25N80 -264A

    IXFN27N80

    Abstract: No abstract text available
    Text: HiPerFET Power MOSFETs IXFK IXFK IXFN IXFN N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Lowt^ 27N80 25N80 27N80 25N80 D v DSS ^D25 800 V 800V 800 V 800 V 27 A 25 A 27 A 25 A DS on 0.30 n 0.35 O 0.30 Q 0.35 O TO-264AA(IXFK) Symbol vw DSS Test Conditions


    OCR Scan     		PDF 27N80 25N80 25N80 O-264AA IXFN27N80

    STK1OC68-35

    Abstract: No abstract text available
    Text: STK10C68 CMOS nvSRAM High Performance 8K x 8 Nonvolatile Static RAM SlfTlTEH FEATURES DESCRIPTION 25, 30, 35 and 45ns Access Times 12,15, 20 and 25ns Output Enable Access Unlimited Read and Write to SRAM Hardware STORE Initiation Automatic STOflETimlng 104 or -tos STORE cycles to EEPROM


    OCR Scan     		PDF STK10C68 STK10C68 STK1OC68-35

    Untitled

    Abstract: No abstract text available
    Text: STK11C68 CMOS nvSRAM High Performance ^ x 8 Nonvolatile Static RAM SlfflTEH FEATURES DESCRIPTION • • • • • The Simtek STK11C6 8 is a fast static RAM 25,30,35, 45ns , with a nonvolatile electrically-erasable PROM (EEPROM) element incorporated in each static memory


    OCR Scan     		PDF STK11C68 STK11C6 STK11C68 D000flS3

    ixys ixfn 55n50

    Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60
    Text: i , i - •*.*• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ | Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01


    OCR Scan     		PDF O-247 O-247 T0-204 O-264 O-264 76N06-11 75N06-12 110N06 76N07-11 76N07-12 ixys ixfn 55n50 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60

    wabash

    Abstract: 25N80A LHi 978 25n80 25N100 25N90 IXGH25N100 IXGH25N80 IXGH25N90 IXGM25N100
    Text: I X Y S LOKM " 03 4686226 I X Y S C O R P DE I 4bübddb UUUUddU Jj 03E 00220 D 25N80, 90, 100 25N80, 90, 100 25 AMPS, 800-1000 VOLTS MAXIMUM RATINGS Sym. 25N80 25N80 IXGH25N90 IXGM25N90 IXGH25N100 IXGM25N100 Unit Drain-Source Voltage 1 Vd ss


    OCR Scan     		PDF IXGH25N80, IXGM25N80, IXGH25N80 IXGM25N80 IXGH25N90 IXGH25N100 IXGM25N90 IXGM25N100 wabash 25N80A LHi 978 25n80 25N100 25N90