Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/Diode MMIX1X200N60B3H1 Electrically Isolated Tab VCES IC110 VCE(sat) tfi(typ) = = ≤ = 600V 72A 1.7V 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching Symbol Test Conditions VCES VCGR
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MMIX1X200N60B3H1
IC110
110ns
10-30kHz
IF110
MMIX1X200N60B3
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information XPTTM 600V IGBT GenX3TM w/Diode MMIX1X200N60B3H1 Electrically Isolated Tab VCES IC110 VCE(sat) tfi(typ) = = ≤ = 600V 72A 1.7V 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching C G Symbol Test Conditions Maximum Ratings
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MMIX1X200N60B3H1
IC110
110ns
10-30kHz
IF110
MMIX1X200N60B3
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/Diode IXXN200N60B3H1 VCES IC110 VCE sat tfi(typ) = = ≤ = 600V 98A 1.7V 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions VCES VCGR
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IXXN200N60B3H1
IC110
110ns
10-30kHz
OT-227B,
E153432
IF110
200N60B3
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ixxn200n60b3h1
Abstract: IXXN200N60B3 200n60
Text: Advance Technical Information XPTTM 600V IGBT GenX3TM w/Diode IXXN200N60B3H1 VCES IC110 VCE sat tfi(typ) = = ≤ = 600V 98A 1.7V 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C
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10-30kHz
IXXN200N60B3H1
IC110
110ns
OT-227B,
E153432
IF110
50/60Hz
200N60B3
ixxn200n60b3h1
IXXN200N60B3
200n60
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information XPTTM 600V IGBT GenX3TM w/Diode VCES IC110 VCE sat tfi(typ) IXXN200N60B3H1 = = ≤ = 600V 98A 1.7V 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C
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IC110
IXXN200N60B3H1
110ns
10-30kHz
OT-227B,
E153432
IF110
200N60B3
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MMIX1X200N60B3H1
Abstract: No abstract text available
Text: Advance Technical Information XPTTM 600V IGBT GenX3TM w/Diode MMIX1X200N60B3H1 Electrically Isolated Tab VCES IC110 VCE(sat) tfi(typ) = = ≤ = 600V 72A 1.7V 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching C G Symbol Test Conditions Maximum Ratings
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10-30kHz
IC110
IF110
MMIX1X200N60B3H1
110ns
MMIX1X200N60B3
MMIX1X200N60B3H1
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IXGN200N60B3
Abstract: 9V DC INPUT and gate ic 200N60B3 IGBT 100V 100A igbt 100a 150v SOT227B 123B16
Text: IXGN200N60B3 GenX3TM 600V IGBT VCES = 600V IC110 = 200A VCE sat ≤ 1.50V Medium-Speed Low-Vsat PT IGBT for 5-40kHz Switching SOT-227B, miniBLOC E153432 Ec Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXGN200N60B3
IC110
5-40kHz
OT-227B,
E153432
200N60B3
8-08-A
IXGN200N60B3
9V DC INPUT and gate ic
IGBT 100V 100A
igbt 100a 150v
SOT227B
123B16
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Untitled
Abstract: No abstract text available
Text: GenX3TM 600V IGBT IXGB200N60B3 VCES = IC110 = VCE sat ≤ tfi(typ) = Medium speed low Vsat PT IGBTs 5-40 kHz switching PLUS264TM (IXGB) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1 MΩ 600 600 V V VGES
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IXGB200N60B3
IC110
183ns
PLUS264TM
200N60B3
8-08-A
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SOT-227B
Abstract: ixxn200n60 ixxn200n60c3h1 DS100511
Text: Advance Technical Information XPTTM 600V IGBT GenX3TM w/Sonic IXXN200N60C3H1 VCES IC110 VCE sat tfi(typ) Diode Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 600V 98A 2.1V 80ns E SOT-227B E153432 Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C
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20-60kHz
IXXN200N60C3H1
IC110
OT-227B
E153432
IF110
50/60Hz
200N60C3
1-05-12-A
SOT-227B
ixxn200n60
ixxn200n60c3h1
DS100511
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/ Sonic IXXN200N60C3H1 VCES IC110 VCE sat tfi(typ) Diode Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 600V 98A 2.1V 80ns E SOT-227B E153432 Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C
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IXXN200N60C3H1
IC110
20-60kHz
OT-227B
E153432
IF110
200N60C3
1-05-12-A
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Untitled
Abstract: No abstract text available
Text: VCES = 600V IC110 = 200A VCE sat ≤ 1.50V IXGN200N60B3 GenX3TM 600V IGBT Medium-Speed Low-Vsat PT IGBT for 5-40kHz Switching SOT-227B, miniBLOC E153432 E¦ Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IC110
IXGN200N60B3
5-40kHz
OT-227B,
E153432
200N60B3
8-08-A
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200N60B3
Abstract: IXGN200N60B
Text: Preliminary Technical Information VCES = 600V IC110 = 200A VCE sat ≤ 1.5V IXGN200N60B3 GenX3TM 600V IGBT Medium speed low Vsat PT IGBTs for 5-40kHz switching SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600
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IC110
IXGN200N60B3
5-40kHz
OT-227B,
E153432
200N60B3
8-08-A
IXGN200N60B
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information PolarTM IGBT IXGQ 100N60PCD1 VCES IC25 With Anti-Parallel Diode For PDP Applications Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VGES Continuous ±20 V VGEM Transient ±30 V 100 A 75 A 188 A 75 A ICM = 100 A = = Maximum Ratings
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100N60PCD1
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200n60
Abstract: IXGB200N60B3 200N60B3
Text: IXGB200N60B3 GenX3TM 600V IGBT VCES = IC110 = VCE sat ≤ tfi(typ) = Medium speed low Vsat PT IGBTs 5-40 kHz switching PLUS264TM (IXGB) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1 MΩ 600 600 V V VGES
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IXGB200N60B3
IC110
183ns
PLUS264TM
200N60B3
8-08-A
200n60
IXGB200N60B3
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200N60B3
Abstract: No abstract text available
Text: GenX3TM 600V IGBT IXGL200N60B3 VCES = IC110 = VCE sat ≤ tfi(typ) = Medium speed low Vsat PT IGBTs 5-40 kHz switching Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES VGEM Continuous Transient ±20 ±30
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IXGL200N60B3
IC110
183ns
200N60B3
8-08-A
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200n60
Abstract: IXGL200N60B3 200N60B3 100-A45
Text: IXGL200N60B3 GenX3TM 600V IGBT VCES = IC110 = VCE sat ≤ tfi(typ) = Medium speed low Vsat PT IGBTs 5-40 kHz switching Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES VGEM Continuous Transient ±20 ±30
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IXGL200N60B3
IC110
183ns
200N60B3
8-08-A
200n60
IXGL200N60B3
100-A45
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information XPTTM 650V GenX3TM w/ Sonic Diode IXYN100N65C3H1 VCES = IC110 = VCE sat tfi(typ) = Extreme Light Punch Through IGBT for 20-60kHz Switching 650V 90A 2.30V 50ns SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings
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IXYN100N65C3H1
IC110
20-60kHz
OT-227B,
E153432
IF110
100N65C3
0-24-13-A
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95A 640
Abstract: No abstract text available
Text: APTC60AM242G Phase leg Super Junction MOSFET Power Module VDSS = 600V RDSon = 24mΩ max @ Tj = 25°C ID = 95A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • CoolMOS
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APTC60AM242G
95A 640
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Untitled
Abstract: No abstract text available
Text: XPTTM 650V GenX4TM w/ Sonic Diode IXXR110N65B4H1 Electrically Isolated Tab VCES IC110 VCE(sat) tfi(typ) = = ≤ = 650V 70A 2.20V 85ns Extreme Light Punch Through IGBT for 10-30kHz Switching ISOPLUS247TM Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C
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IXXR110N65B4H1
IC110
10-30kHz
ISOPLUS247TM
IF110
110N65B4H1
02-04-13-B
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Untitled
Abstract: No abstract text available
Text: XPTTM 650V GenX4TM w/ Sonic Diode IXXN110N65B4H1 Extreme Light Punch Through IGBT for 10-30kHz Switching VCES = IC110 = VCE sat tfi(typ) = 650V 110A 2.1V 85ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IXXN110N65B4H1
10-30kHz
IC110
OT-227B,
E153432
IF110
110N65B4H1
02-04-13-B
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Untitled
Abstract: No abstract text available
Text: XPTTM 650V GenX4TM w/ Sonic Diode IXXN110N65C4H1 Extreme Light Punch Through IGBT for 20-60kHz Switching VCES IC110 VCE sat tfi(typ) = = ≤ = 650V 110A 2.35V 30ns E SOT-227B, miniBLOC E153432 Ec Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IXXN110N65C4H1
20-60kHz
IC110
OT-227B,
E153432
IF110
110N65C4
1-30-13-A
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200a 300v mosfet
Abstract: No abstract text available
Text: Provisional Dd.tsi Sh ôt PD*9.1198 1°R Rectifier IRGTDN200K06 "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 200A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail“ losses •Short circuit rated
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OCR Scan
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PDF
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IRGTDN200K06
C-460
200a 300v mosfet
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C1019
Abstract: 200a 300v mosfet
Text: International [xôrIRectifier Provisional Data Sheet PD -9.1198 IRGTDN200K06 "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 200A •Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated
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OCR Scan
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PDF
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IRGTDN200K06
C-1020
C1019
200a 300v mosfet
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200a 300v mosfet
Abstract: No abstract text available
Text: bitemational Km Rectifier Provisional Data Sheet PD-9.1198 IRGTDN200K06 Low conduction loss IGBT "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK V CE = 600V lc = 200A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated
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OCR Scan
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PDF
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IRGTDN200K06
C-460
GD2025D
200a 300v mosfet
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