Contextual Info: MCTV75P60E1, i MCTA75P60E1 HARM S X Semiconductor 75A, 600V P-Type MOS Controlled Thyristor MCT p * 0 ' Cfcs S April 1999 Features Package JEDEC STYLE TO-247 5-LEAD • 75A ,-6 00V A NO DE • VTM = -1.3V(Maxim um ) at I = 75A and +150°C • 2000A Surge Current Capability

MCT thyristor 1000v

Contextual Info: MCTV65P100F1, MCTA65P100F1 HARRIS S E M I C O N D U C T O R 65A, 1000V P-Type MOS Controlled Thyristor MCT April 1 9 9 5 Features Package JE D E C S T Y LE TO -247 • 65A,-1000V ANO DE • VTM < -1.4V at I = 65A and +150°C CATHODE (FLA NG E) • 2000A Surge Current Capability

Contextual Info: HGTG30N120CN S em iconductor March 1999 Data Sheet 75A, 1200V, NPT Series N-Channel IGBT Features The HGTG30N120CN is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device

Contextual Info: HGTG20N120CND S e m iconductor Data Sheet 63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N120CND is a Non-Punch Through IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best

IC555

Abstract: IC-555 2SC4172 NP254
Contextual Info: Ordering num ber: EN 2546A I _ 2 S C 4 1 7 2 Np, 254.QA NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications Features . High breakdown voltage VCb q ^800V . Fast switching speed . Wide ASO . Suitable for sets whose height is restricted

Contextual Info: MITSUBISHI Nch POWER MOSFET •§;> >>•+. :W> ^ FS12UMA-5A »ft fin*' slljü \e cl 1 *p- "TVi'S 's JJÎ, \\ttVrts &T s°^ HIGH-SPEED SWITCHING USE FS12UMA-5A OUTLINE DRAWING Dimensions in mm Q<2 GATE © DRAIN <D SOURCE ® DRAIN • 10V DRIVE • V d s s . 250V

G30N60A4

Abstract: G30N60A TIL-220 IGBT G30N60A4 TA49343 G30N60A4 transistor G30N60 HGTG30N60A4 TA49373 transistor bipolar collector current 1mA
Contextual Info: i n t e HGTG30N60A4 r r i i J a n u a ry . m D ata S h eet 600V, SMPS Series N-Channel IGBT File N u m b er i 4829 Features The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a

18n120bnd

Abstract: 333AJ 25C312 HGTG18N120BND 12v zener diode JEDEC 1N TA49304 12V 200A Relay LD26
Contextual Info: in t e HGTG18N120BND r r ii J a n u a ry . m Data Sheet 54A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG18N120BND is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best

Contextual Info: Ordering number: EN1013C 2SC3090 NPN Triple Diffused Planar Silicon Transistor SANYO 500V/10Â Switching Regulator Applications J Features . High breakdown voltage Vq ^q^ 00V , . Fast switching speed. . Wide ASO. Absolute Maxi m « Ratings at Ta=25°C Collector-to-Base Voltage

gate drive for mosfet irfz44

Abstract: motor driver IRFZ44 MOSFET IRFZ44 half-bridge power supply regulator IRFZ44 MOSFETs IRFZ44 data class d power
Contextual Info: New Products r r u TECHNOLOGY n m LT1336 Half-Bridge N-Channe! Power MOSFET Driver with Boost Regulator F€flfTUR€S DCSCftlPTIOn • Floating Top Driver Switches Up to 60V ■ Internal Boost Regulator for DC Operation The LT 1336 is a cost effective half-bridge N-channel power

30N60A4D

Abstract: TA49373 30N60A4 TA49345 TA49343 hgtp30n60a4d HGTG30N60A4D TIL-220 HGTG*N60A4D la 4830 ic
Contextual Info: i n t e HGTG30N60A4D r r i i J a n u a ry . m D ata S h eet 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input

Contextual Info: H ^ r tm ^ s • « / < S e m ico n d ucto r mm M m m T 3 5 P 6 F 1 D \ 35A, 600V P-Type MOS Controlled hyristor MCT with Anti-Parallel Diode W tH O B ^ o E S IG N S - ApriM99n V r r : ^ S S OBSOLi ! i - - — 1 Package Featuw§ • 35A ,-6 00V JEDEC STYLE TO-247

BMF 11A

Abstract: r02f 16V7K MALLORY CAPACITOR CATALOG 20h inductor TOTALLY ISOLATED CONVERTER 630fl IL393 K895 LG TV flyback transformer
Contextual Info: urm ECHNOLOGY Application Note 19 June 1986 LT1070 Design Manual Carl Nelson INTRODUCTION Three terminal monolithic linear voltage regulators appeared almost 20 years ago, and were almost immediately success­ ful for a variety of reasons. In particular, there were relatively

2SC4171

Contextual Info: Ordering number: EN 2547A 2SC4171 NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications Features High breakdown voltage V CBq £800V Fast switching speed Wide ASO Suitable for sets whose height is restricted Absolute Maximum Ratings at Ta=25°C

lg crt tv circuit diagram

Abstract: lg crt tv diagram LG crt TV flyback transformer LG TV flyback transformer BU326A BU326 BU406 Transformer eht ctv eht transformer SGS-Thomson bu326
Contextual Info: - , la SGS-THOMSON M œ m iO T is K S BU326 BÜ326A . HIGH VOLTAGE POWER SWITCH ESCRIPTION te BU326 and BU326A are silicon muitiepitaxial ssa NPN transistors in Jedec TO-3 meta! case irticularly intended for switch-mode CTV supply ••stem. -.BSOLUTE MAXIMUM RATINGS

2SC3845

Abstract: 2SC3842 2SC3847 2SC3844 6011s 2SC3843 2SC3846 fujitsu tg h
Contextual Info: 31E J> FUJITSU MICROELECTRONICS O 374^7^2 D01bb52 QFMI cP January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE- 2SC3843 Silicon High Speed Power Transistor 2SC3843 450V, 10A A BSO LU T E M A X IM U M R A T IN G S Parameter Sym b ol C onditions Rating U nit -5 5 ~ +150

2SC3842

Abstract: 2SC3843 2SC3844 2SC3845 2SC3846 2SC3847 2SC3947
Contextual Info: FUJITSU MICROELECTRONICS 31E D a 374R7b5 G01bb2b b SFMI T-33 January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE - 2SC3844 Silicon High Speed Power Transistor 2SC3844 450V, 15A A B S O LU T E M A X IM U M R ATIN G S Parameter Storage Tem perature Range Junctio n Tem perature

Contextual Info: MITSUBISHI Nch POWER MOSFET •§;> >>•+. :W> ^ FS10UMA-5A »ft fin*' slljü \e cl 1 *p- "TVi'S 's JJÎ, \\ttVrts &T s°^ HIGH-SPEED SWITCHING USE FS10UMA-5A OUTLINE DRAWING Dimensions in mm Q @ • 10V D R IV E • V d s s . 2 5 0 V

transistor Electronic ballast t5

Abstract: transistor electronic ballast for T5 ESM 748 PHE13005
Contextual Info: Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor PHE13005 GENERAL DESCRIPTION The PHE13005 is a silicon npn power switching transistor in the T0220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems,