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    G30N60 Price and Stock

    Rochester Electronics LLC HGTG30N60B3

    600 V, NPT IGBT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HGTG30N60B3 Tube 16,153 95
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    • 100 $3.16
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    Rochester Electronics LLC NGTG30N60FLWG

    IGBT TRENCH FS 600V 60A TO247-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NGTG30N60FLWG Tube 8,430 143
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    • 1000 $2.11
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    Rochester Electronics LLC HGTG30N60C3D

    IGBT 600V 63A TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HGTG30N60C3D Bulk 7,113 44
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    • 100 $6.96
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    Rochester Electronics LLC HGTG30N60C3

    63A, 600V, UFS N-CHANNEL IGBT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HGTG30N60C3 Bulk 1,321 124
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    Vishay Siliconix SIHG30N60E-GE3

    MOSFET N-CH 600V 29A TO247AC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHG30N60E-GE3 Tube 500 1
    • 1 $5.98
    • 10 $4.213
    • 100 $5.98
    • 1000 $2.875
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    Bristol Electronics SIHG30N60E-GE3 225
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    Find more G30N60 price and stock on Findchips.com

    G30N60 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    G30N60B3D Fairchild Semiconductor 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Original PDF

    G30N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    g30n60

    Abstract: No abstract text available
    Text: G30N60B3 Data Sheet November 2013 600 V, NPT IGBT Features The G30N60B3 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at


    Original     		PDF HGTG30N60B3 HGTG30N60B3 TA49170. O-247 g30n60

    G30N60

    Abstract: TA49053 TA49172 TA49170 G30N60B3 G30N60B3D HGTG30N60B3D LD26 HGTG30N60b 200pulse
    Text: G30N60B3D Data Sheet April 2004 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Packaging JEDEC STYLE TO-247 The G30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a


    Original     		PDF HGTG30N60B3D O-247 HGTG30N60B3D 150oC. TA49170. TA49053. G30N60 TA49053 TA49172 TA49170 G30N60B3 G30N60B3D LD26 HGTG30N60b 200pulse

    G30N60A4

    Abstract: HGTG30N60A4 IGBT G30N60A4 g30n60a smart ups 750 circuit g30n60 247A03
    Text: G30N60A4 Data Sheet April 2013 600V SMPS IGBT Features The G30N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high


    Original     		PDF HGTG30N60A4 HGTG30N60A4 TA49343. O-247 G30N60A4 G30N60A4 IGBT G30N60A4 g30n60a smart ups 750 circuit g30n60 247A03

    g30n60c3d

    Abstract: G30N60 TA49053 TA49051 HGTG30N60C3D LD26 RHRP3060
    Text: G30N60C3D Data Sheet January 2009 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features The G30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input


    Original     		PDF HGTG30N60C3D HGTG30N60C3D 150oC. TA49051. TA49053. 230ns 150oC g30n60c3d G30N60 TA49053 TA49051 LD26 RHRP3060

    g30n60hs

    Abstract: g30n60 SGW30N60HS 1A20A
    Text: SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SGP30N60HS SGW30N60HS PG-TO-220-3-1 PG-TO-247-3-21 PG-TO-220-3-1 SGW30N60HS g30n60hs g30n60 1A20A

    NGTG30N60FLWG

    Abstract: G30N60FL G30N60F
    Text: G30N60FLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.


    Original     		PDF NGTG30N60FLWG 100able NGTG30N60FLW/D G30N60FL G30N60F

    G30N60F

    Abstract: g30n60 NGTG30N60FWG
    Text: G30N60FWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.


    Original     		PDF NGTG30N60FWG NGTG30N60FW/D G30N60F g30n60

    G30N60B3

    Abstract: G30N60 G30N60B3 hARRIS TA49170 G30N60B
    Text: G30N60B3 S E M I C O N D U C T O R 60A, 600V, UFS Series N-Channel IGBT January 1998 Features Description • 60A, 600V, TC = 25oC The G30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a


    Original     		PDF HGTG30N60B3 HGTG30N60B3 150oC. TA49170. 60nts 1-800-4-HARRIS G30N60B3 G30N60 G30N60B3 hARRIS TA49170 G30N60B

    No 42 G30N60C3D

    Abstract: g30n60c3d HGTG30N60C3D LD26 RHRP3060 TA49051 TA49053 g30n60 G30N60C
    Text: G30N60C3D S E M I C O N D U C T O R 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode August 1995 Features • • • • • Package o 63A, 600V at TC = +25 C Typical Fall Time - 230ns at TJ = +150oC Short Circuit Rating Low Conduction Loss


    Original     		PDF HGTG30N60C3D 230ns 150oC O-247 HGTG30N60C3D 150oC. TA49051. 1-800-4-HARRIS No 42 G30N60C3D g30n60c3d LD26 RHRP3060 TA49051 TA49053 g30n60 G30N60C

    G30N60B3

    Abstract: TA49170
    Text: G30N60B3 Data Sheet April 2013 600 V, NPT IGBT Features The G30N60B3 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where


    Original     		PDF HGTG30N60B3 HGTG30N60B3 TA49170. O-247 G30N60B3 O-247 G30N60B3 TA49170

    G30N60

    Abstract: G30N60C3 G30N60C3S HGTG SC-15 HGT4E30N60C3S HGTG30N60C3 LD26 RHRP3060 TA49051
    Text: G30N60C3, HGT4E30N60C3S Data Sheet December 2001 63A, 600V, UFS Series N-Channel IGBT Features The G30N60C3 and HGT4E30N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the


    Original     		PDF HGTG30N60C3, HGT4E30N60C3S HGTG30N60C3 HGT4E30N60C3S 150oC. G30N60 G30N60C3 G30N60C3S HGTG SC-15 LD26 RHRP3060 TA49051

    g30n60

    Abstract: g30n60c3d RHRP3060 TA49051 TA49053 HGTG30N60C3D
    Text: G30N60C3D Data Sheet January 2000 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features The G30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input


    Original     		PDF HGTG30N60C3D HGTG30N60C3D 150oC. TA49051. TA49053. 230ns 150oC g30n60 g30n60c3d RHRP3060 TA49051 TA49053

    G30N60

    Abstract: TA49051 G30N60C3 HGTG30N60C3 LD26 RHRP3060 igbts
    Text: G30N60C3 Data Sheet December 2001 63A, 600V, UFS Series N-Channel IGBT Features The G30N60C3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		PDF HGTG30N60C3 HGTG30N60C3 150oC. 230ns 150oC G30N60 TA49051 G30N60C3 LD26 RHRP3060 igbts

    g30n60b3

    Abstract: G30N60 HGTG30N60B3 TA49170 HGTG30N60B3D LD26 DIODE B2 IC2560
    Text: G30N60B3 Data Sheet August 2003 60A, 600V, UFS Series N-Channel IGBT Features The G30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		PDF HGTG30N60B3 HGTG30N60B3 150oC. 150oC g30n60b3 G30N60 TA49170 HGTG30N60B3D LD26 DIODE B2 IC2560

    g30n60

    Abstract: G30N60 IGBT equivalent to g30n60 1 L 0380 PG-TO-263-3-2 SGB30N60 30mJ
    Text: SGB30N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		PDF SGB30N60 PG-TO-263-3-2 O-263AB) G30N60 g30n60 G30N60 IGBT equivalent to g30n60 1 L 0380 PG-TO-263-3-2 SGB30N60 30mJ

    G30N60C3

    Abstract: igbt g30n60c3 HGTG30N60C3 LD26 RHRP3060 TA49051
    Text: G30N60C3 Data Sheet January 2000 63A, 600V, UFS Series N-Channel IGBT Features The G30N60C3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		PDF HGTG30N60C3 HGTG30N60C3 150oC. 230ns 150oC G30N60C3 igbt g30n60c3 LD26 RHRP3060 TA49051

    g30n60a4

    Abstract: g30n60a IGBT G30N60A4 TA49343 G30N60A4 transistor g30n60 12V 30A diode HGTG30N60A4 TA49373 ICE 280
    Text: G30N60A4 Data Sheet January 2000 File Number 600V, SMPS Series N-Channel IGBT Features The G30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a


    Original     		PDF HGTG30N60A4 HGTG30N60A4 150oC. 100kHz 200kHz 125oC g30n60a4 g30n60a IGBT G30N60A4 TA49343 G30N60A4 transistor g30n60 12V 30A diode TA49373 ICE 280

    G30N60A4

    Abstract: G30N60A G30N60 IGBT G30N60A4 TA49343 TA49373 HGTG30N60A4 G30N60A4 transistor LD26
    Text: G30N60A4 Data Sheet January 2000 File Number 600V, SMPS Series N-Channel IGBT Features The G30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a


    Original     		PDF HGTG30N60A4 HGTG30N60A4 150oC. 100kHz 200kHz 125oC G30N60A4 G30N60A G30N60 IGBT G30N60A4 TA49343 TA49373 G30N60A4 transistor LD26

    g30n60a4

    Abstract: IGBT G30N60A4 G30N60A HGTG30N60A4 TA49343 G30N60A4 transistor LD26 TA49373
    Text: G30N60A4 Data Sheet December 2001 600V, SMPS Series N-Channel IGBT Features The G30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		PDF HGTG30N60A4 HGTG30N60A4 150oC. 100kHz 200kHz 125oC g30n60a4 IGBT G30N60A4 G30N60A TA49343 G30N60A4 transistor LD26 TA49373

    G30N60B3D

    Abstract: HGTG30N60B3D TA49172
    Text: G30N60B3D Data Sheet December 2001 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The G30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input


    Original     		PDF HGTG30N60B3D HGTG30N60B3D 150oC. TA49170. TA49053. G30N60B3D TA49172

    g30n60b3

    Abstract: HGTG30N60B3
    Text: G30N60B3 Data Sheet December 2001 60A, 600V, UFS Series N-Channel IGBT Features The G30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		PDF HGTG30N60B3 HGTG30N60B3 150oC. TA49170. g30n60b3

    G30N60

    Abstract: G30N60 IGBT g30n60 infineon SGW30N60 PG-TO-220-3-1 IGBT 400V 100KHZ 30A igbt 600V 30A
    Text: SGP30N60 SGW30N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		PDF SGP30N60 SGW30N60 PG-TO-220-3-1 PG-TO-247-3 SGW30N60 G30N60 G30N60 IGBT g30n60 infineon PG-TO-220-3-1 IGBT 400V 100KHZ 30A igbt 600V 30A

    g30n60

    Abstract: equivalent to g30n60 G30N60 IGBT g30n60 infineon 0/equivalent to g30n60 PG-TO-247-3-21
    Text: SGP30N60 SGW30N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		PDF SGP30N60 SGW30N60 PG-TO-220-3-1 PG-TO-247-3-21 SGW30N60 g30n60 equivalent to g30n60 G30N60 IGBT g30n60 infineon 0/equivalent to g30n60 PG-TO-247-3-21

    G30N60

    Abstract: TA49053 G30N60B3D G30N60B3 TA49172 transistor C110 Transistor No C110 TA49170 LG 631 LG 631 IC
    Text: in t e G30N60B3D r r ii J a n u a ry . m D ata S h eet 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The G30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input


    OCR Scan     		PDF HGTG30N60B3D HGTG30N60B3D TA49170. TA49053. G30N60 TA49053 G30N60B3D G30N60B3 TA49172 transistor C110 Transistor No C110 TA49170 LG 631 LG 631 IC