Untitled
Abstract: No abstract text available
Text: MCTV75P60E1, i MCTA75P60E1 HARM S X Semiconductor 75A, 600V P-Type MOS Controlled Thyristor MCT p * 0 ' Cfcs S April 1999 Features Package JEDEC STYLE TO-247 5-LEAD • 75A ,-6 00V A NO DE • VTM = -1.3V(Maxim um ) at I = 75A and +150°C • 2000A Surge Current Capability
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MCTV75P60E1,
MCTA75P60E1
O-247
000A/|
O-093AA
O-218)
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MCT thyristor 1000v
Abstract: No abstract text available
Text: MCTV65P100F1, MCTA65P100F1 HARRIS S E M I C O N D U C T O R 65A, 1000V P-Type MOS Controlled Thyristor MCT April 1 9 9 5 Features Package JE D E C S T Y LE TO -247 • 65A,-1000V ANO DE • VTM < -1.4V at I = 65A and +150°C CATHODE (FLA NG E) • 2000A Surge Current Capability
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MCTV65P100F1,
MCTA65P100F1
-1000V
-093A
MCT thyristor 1000v
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Untitled
Abstract: No abstract text available
Text: HGTG30N120CN S em iconductor March 1999 Data Sheet 75A, 1200V, NPT Series N-Channel IGBT Features The HGTG30N120CN is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device
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HGTG30N120CN
HGTG30N120CN
350ns
1-800-4-HARRIS
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Untitled
Abstract: No abstract text available
Text: HGTG20N120CND S e m iconductor Data Sheet 63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N120CND is a Non-Punch Through IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best
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HGTG20N120CND
HGTG20N120CND
1-800-4-HARRIS
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IC555
Abstract: IC-555 2SC4172 NP254
Text: Ordering num ber: EN 2546A I _ 2 S C 4 1 7 2 Np, 254.QA NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications Features . High breakdown voltage VCb q ^800V . Fast switching speed . Wide ASO . Suitable for sets whose height is restricted
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Nch POWER MOSFET •§;> >>•+. :W> ^ FS12UMA-5A »ft fin*' slljü \e cl 1 *p- "TVi'S 's JJÎ, \\ttVrts &T s°^ HIGH-SPEED SWITCHING USE FS12UMA-5A OUTLINE DRAWING Dimensions in mm Q<2 GATE © DRAIN <D SOURCE ® DRAIN • 10V DRIVE • V d s s . 250V
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FS12UMA-5A
O-220
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G30N60A4
Abstract: G30N60A TIL-220 IGBT G30N60A4 TA49343 G30N60A4 transistor G30N60 HGTG30N60A4 TA49373 transistor bipolar collector current 1mA
Text: i n t e HGTG30N60A4 r r i i J a n u a ry . m D ata S h eet 600V, SMPS Series N-Channel IGBT File N u m b er i 4829 Features The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a
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HGTG30N60A4
HGTG30N60A4
TA49343.
O-247
G30N60A4
G30N60A4
G30N60A
TIL-220
IGBT G30N60A4
TA49343
G30N60A4 transistor
G30N60
TA49373
transistor bipolar collector current 1mA
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18n120bnd
Abstract: 333AJ 25C312 HGTG18N120BND 12v zener diode JEDEC 1N TA49304 12V 200A Relay LD26
Text: in t e HGTG18N120BND r r ii J a n u a ry . m Data Sheet 54A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG18N120BND is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best
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HGTG18N120BND
HGTG18N120BND
TA49304.
18n120bnd
333AJ
25C312
12v zener diode JEDEC 1N
TA49304
12V 200A Relay
LD26
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Untitled
Abstract: No abstract text available
Text: Ordering number: EN1013C 2SC3090 NPN Triple Diffused Planar Silicon Transistor SANYO 500V/10Â Switching Regulator Applications J Features . High breakdown voltage Vq ^q^ 00V , . Fast switching speed. . Wide ASO. Absolute Maxi m « Ratings at Ta=25°C Collector-to-Base Voltage
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EN1013C
2SC3090
00V/10Ã
300ps
D138M0/4207KI/2125MW
RWs20us
DDEDD53
0QSD054
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gate drive for mosfet irfz44
Abstract: motor driver IRFZ44 MOSFET IRFZ44 half-bridge power supply regulator IRFZ44 MOSFETs IRFZ44 data class d power
Text: New Products r r u TECHNOLOGY n m LT1336 Half-Bridge N-Channe! Power MOSFET Driver with Boost Regulator F€flfTUR€S DCSCftlPTIOn • Floating Top Driver Switches Up to 60V ■ Internal Boost Regulator for DC Operation The LT 1336 is a cost effective half-bridge N-channel power
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LT1336
16-LEAD
1N4148
200jiH*
40Vmax*
-TIRFZ44
1000nF
IRFZ44
100kHz
RCH-664D-221KC
gate drive for mosfet irfz44
motor driver IRFZ44
MOSFET IRFZ44
half-bridge power supply regulator
IRFZ44 MOSFETs
IRFZ44 data
class d power
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30N60A4D
Abstract: TA49373 30N60A4 TA49345 TA49343 hgtp30n60a4d HGTG30N60A4D TIL-220 HGTG*N60A4D la 4830 ic
Text: i n t e HGTG30N60A4D r r i i J a n u a ry . m D ata S h eet 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input
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HGTG30N60A4D
HGTG30N60A4D
TA49343.
TA49373.
30N60A4D
TA49373
30N60A4
TA49345
TA49343
hgtp30n60a4d
TIL-220
HGTG*N60A4D
la 4830 ic
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Untitled
Abstract: No abstract text available
Text: H ^ r tm ^ s • « / < S e m ico n d ucto r mm M m m T 3 5 P 6 F 1 D \ 35A, 600V P-Type MOS Controlled hyristor MCT with Anti-Parallel Diode W tH O B ^ o E S IG N S - ApriM99n V r r : ^ S S OBSOLi ! i - - — 1 Package Featuw§ • 35A ,-6 00V JEDEC STYLE TO-247
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ApriM99n
O-247
factor/100)
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BMF 11A
Abstract: r02f 16V7K MALLORY CAPACITOR CATALOG 20h inductor TOTALLY ISOLATED CONVERTER 630fl IL393 K895 LG TV flyback transformer
Text: urm ECHNOLOGY Application Note 19 June 1986 LT1070 Design Manual Carl Nelson INTRODUCTION Three terminal monolithic linear voltage regulators appeared almost 20 years ago, and were almost immediately success ful for a variety of reasons. In particular, there were relatively
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LT1070
O-220Type
LT1070MK,
LT1070HVMK
LT1070CK,
LT1070HVCK
LT1070CT,
LT1070HVCT
BMF 11A
r02f
16V7K
MALLORY CAPACITOR CATALOG
20h inductor
TOTALLY ISOLATED CONVERTER
630fl
IL393
K895
LG TV flyback transformer
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2SC4171
Abstract: No abstract text available
Text: Ordering number: EN 2547A 2SC4171 NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications Features High breakdown voltage V CBq £800V Fast switching speed Wide ASO Suitable for sets whose height is restricted Absolute Maximum Ratings at Ta=25°C
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2SC4171
Tcs25Â
2SC4171
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lg crt tv circuit diagram
Abstract: lg crt tv diagram LG crt TV flyback transformer LG TV flyback transformer BU326A BU326 BU406 Transformer eht ctv eht transformer SGS-Thomson bu326
Text: - , la SGS-THOMSON M œ m iO T is K S BU326 BÜ326A . HIGH VOLTAGE POWER SWITCH ESCRIPTION te BU326 and BU326A are silicon muitiepitaxial ssa NPN transistors in Jedec TO-3 meta! case irticularly intended for switch-mode CTV supply ••stem. -.BSOLUTE MAXIMUM RATINGS
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BU326
BU326A
BU326
BU326-BU326A
25x4x2
19x15x5
330il
lg crt tv circuit diagram
lg crt tv diagram
LG crt TV flyback transformer
LG TV flyback transformer
BU406
Transformer eht ctv
eht transformer
SGS-Thomson bu326
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2SC3845
Abstract: 2SC3842 2SC3847 2SC3844 6011s 2SC3843 2SC3846 fujitsu tg h
Text: 31E J> FUJITSU MICROELECTRONICS O 374^7^2 D01bb52 QFMI cP January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE- 2SC3843 Silicon High Speed Power Transistor 2SC3843 450V, 10A A BSO LU T E M A X IM U M R A T IN G S Parameter Sym b ol C onditions Rating U nit -5 5 ~ +150
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374T7b2
01tb52
2SC3843
2SC3843
2SC3842
2SC3844
2SC3845
2SC3846
2SC3847
6011s
fujitsu tg h
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2SC3842
Abstract: 2SC3843 2SC3844 2SC3845 2SC3846 2SC3847 2SC3947
Text: FUJITSU MICROELECTRONICS 31E D a 374R7b5 G01bb2b b SFMI T-33 January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE - 2SC3844 Silicon High Speed Power Transistor 2SC3844 450V, 15A A B S O LU T E M A X IM U M R ATIN G S Parameter Storage Tem perature Range Junctio n Tem perature
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374R7b5
2SC3844
2SC3844
2SC3842
2SC3843
2SC3845
2SC3846
2SC3847
2SC3947
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Nch POWER MOSFET •§;> >>•+. :W> ^ FS10UMA-5A »ft fin*' slljü \e cl 1 *p- "TVi'S 's JJÎ, \\ttVrts &T s°^ HIGH-SPEED SWITCHING USE FS10UMA-5A OUTLINE DRAWING Dimensions in mm Q @ • 10V D R IV E • V d s s . 2 5 0 V
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FS10UMA-5A
FS10UMA-5A
O-220
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transistor Electronic ballast t5
Abstract: transistor electronic ballast for T5 ESM 748 PHE13005
Text: Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor PHE13005 GENERAL DESCRIPTION The PHE13005 is a silicon npn power switching transistor in the T0220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems,
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PHE13005
PHE13005
T0220AB
200jiH
transistor Electronic ballast t5
transistor electronic ballast for T5
ESM 748
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