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    SMOS182

    Abstract: No abstract text available
    Text: TMS626802, TMS636802 1048576-WORD BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES SMOS182 - FEBRUARY 1994 TM S626802 LVTTL DGE PACKAGE (TO P VIE W ) 3.3-V Power Supply (10% Tolerance) Two Banks for On-Chip Interleaving (Gapless Accesses) vcc [ 1


    OCR Scan     		TMS626802, TMS636802 1048576-WORD SMOS182 100-MHz S626802 PDF

    C2238

    Abstract: TMS626812
    Text: TM S626412A , TM S626812A 2 0 9 7 1 5 2 B Y 4 -B IT B Y 2 -B A N K , 1 0 4 8 5 7 6 B Y 8 -B IT B Y 2 -B A N K S Y N C H R O N O U S D Y N A M IC R A N D O M -A C C E S S M E M O R IE S _ SMOS691A-JULY 1997 - REVISED OCTOBER 1997 SYNCHRONOUS


    OCR Scan     		S626412A S626812A SMOS691A-JULY 626x12A-10 626x12A-12 TheTMS626x12A 16777216-bit C2238 TMS626812 PDF

    Untitled

    Abstract: No abstract text available
    Text: tVHITE MICROELECTRONICS 1Mx16 CMOS FPM Dynamic RAM WPD1M16-XTJX PRELIMINARY# PLASTIC PLUS FEATURES • Fast Access Time I rac : 70, 8 0 ,100ns PIN CONFIGURATION TOP VIEW ■ Power Supply: 5V±0.5V ■ Packaging Vcc C 1 DQO C 2 DQ1 C 3 DQ2 C 4 DQ3 C 5 Vcc C 6


    OCR Scan     		1Mx16 WPD1M16-XTJX 100ns PDF

    Untitled

    Abstract: No abstract text available
    Text: TMS664414, TMS664814, TMS664164 64M-BIT SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES SMOS69Q - DECEMBER 1996 High-Speed, L ow -N o ise Low-Voltage x 16 x 4 B a n k s 2M x 8 x 4 B a n k s Transistor-Transistor Logic LVTTL 4M x 4 x 4 B a n k s Interface 3.3-V P o w e r S u p p l y ( ± 1 0 % Toler ance)


    OCR Scan     		TMS664414, TMS664814, TMS664164 64M-BIT SMOS69Q PDF

    Untitled

    Abstract: No abstract text available
    Text: 19-1198; Rev0; 4/97 JV Y A Y A JV X / « to 3 -C ell, H ig h -C u rren t, Lo w -N o ise , S te p -U p D C -D C C o n v e rte rs w ith L in e a r R e g u la to r The MAX1705/MAX1706 are high-efficiency, low-noise, step-up DC-DC converters with an auxiliary linearregulator output. These devices are intended for use in


    OCR Scan     		MAX1705/MAX1706 MAX1705 MAX1706 200mA. 537bb51 705/M PDF

    SO DIMM 100 Pin Connector Pinout

    Abstract: SO DIMM DRAM 144 Pin Connector Pinout
    Text: IBM13M8734HCB Preliminary 8M x 72 1 Bank Registered SDRAM Module Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module 8Mx72 Synchronous DRAM DIMM Performance: i -75A Reg. ; , j | DIMM CAS Latency I 4 : ; 133 100 MHz ! fd< i Clock Frequency i 7.5 ! 10.0 j ns !


    OCR Scan     		IBM13M8734HCB 168-Pin 8Mx72 100MHz 133MHz SO DIMM 100 Pin Connector Pinout SO DIMM DRAM 144 Pin Connector Pinout PDF

    tf12n

    Abstract: No abstract text available
    Text: IBM13M8734HCD P relim inary 8M x 72 1 B ank R eg istered/B uffered S D R A M M odule Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 8Mx72 Synchronous DRAM DIMM • Performance: ; -10 : -260 • -360 ; -360 : U nits: \ Device Latency


    OCR Scan     		IBM13M8734HCD 168-Pin 8Mx72 66/100MHz PC100 tf12n PDF

    analog devices 460j

    Abstract: Model 52K 458J AC1016 analog devices 458L Model 610 458L 460J operational amplifier 458 analog Isolator
    Text: ADVFC32 Page High Linearity ±0.01% max at 10kHz FS ±0.05% max at 100kHz FS ±0.2% max at 0.5MHz FS Vol. I 11-27 Output DTL/TTL/CMOS Compatible V/F or F/V Conversion 6 Decade Dynamic Range Voltage or Current Input Reliable Monolithic Construction MODEL 458/MODEL 460


    OCR Scan     		ADVFC32 10kHz 100kHz 458/MODEL 15ppm/Â 100kHz, LM55107A analog devices 460j Model 52K 458J AC1016 analog devices 458L Model 610 458L 460J operational amplifier 458 analog Isolator PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM366F883AK KMM366F803AK DRAM1VI0DULE KMM366F883AK & KMM366F803AK EDO Mode without buffer 8Mx64 DRAM DIMM based on 8Mx8, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366FB8 0 3AK is a 8M bit x 64 Dynamic RAM high density memory module. The


    OCR Scan     		KMM366F883AK KMM366F803AK KMM366F803AK 8Mx64 KMM366FB8 KMM366F88 400mil 168-pin PDF

    TC96C555CPA

    Abstract: No abstract text available
    Text: SEP E S 1982 7ÎTELEDYNE COMPONENTS PRELIMINARY INFORMATION TC96C555 3A OUTPUT PROGRAMMABLE POWER OSCILLATOR FEATURES GENERAL DESCRIPTION • ■ ■ ■ The TC96C555 Programmable Power Oscillator IC uses Teledyne Components' new Tough CMOS process. The output drive capability is similar to the TC4423/4/5


    OCR Scan     		TC96C555 TC96C555 TC4423/4/5 800pF. a6C555 16-PIN TC96C555CPA PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E D • 7=ib4]i 42 ü ü m 4 7 cl flES DRAM MODULES KMM591020AN 1 M x 9 DRAM SIMM Memory Module with Low Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM591020AN is a 1M b it x 9 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		KMM591020AN KMM591020AN KM44C1020ALJ 20-pin KM41C1000BLJ 30-pin 130ns 150ns PDF

    Untitled

    Abstract: No abstract text available
    Text: B U R R -B R O W N OPA241 OPA251 1 E Single-Supply, M/croPOWER OPERATIONAL AMPLIFIERS FEATURES DESCRIPTION • • • • The OPA241 and OPA251 are specifically designed for battery powered, portable applications. In addition to very low power consumption 24|JiA , these ampli­


    OCR Scan     		OPA241 OPA251 124dB 128dB OPA251 OPA25tive 200pF PDF

    Untitled

    Abstract: No abstract text available
    Text: 4bêfc>S2b OOOlbfi^ AMO H I X Y nixYs If i i 700 900 1300 1500 1700 > > > < < < Thyristor Modules Thyristor/Diode Modules 600 800 1200 1400 1600 MCC250 iTAV= 2 x 287 a MCD250 VRRM= 600-1600 V T ype Version 1 Version 1 M CC250*06io1 M CC250-08ÌO1 MCC2S0-121O1


    OCR Scan     		MCC250 MCD250 CC250 06io1 CC250-08Ã MCC2S0-121O1 CC250-14Ã CC250-16io1 MCD250-06k MCD250-08JO1 PDF

    TL 555c

    Abstract: 4th order butterworth 50hz ax292 MAX291 MAX291CPA max2960
    Text: ykiyjxivki 19-4526; Rev 3; 12/96 8th-Order, Low pass, S w itched-C apacitor F ilters The MAX291/MAX292/MAX295/MAX296 are easy-to-use, 8th-order, lowpass, switched-capacitor filters that can be set up with corner frequencies from 0.1 Hz to 25kHz MAX291/MAX292 or 0.1Hz to 50kHz (MAX295/MAX296).


    OCR Scan     		MAX291 /MAX292/MAX295/MAX296 25kHz /MAX292) 50kHz MAX295/MAX296) MAX291/MAX295 MAX292/MAX296 MIL-STD-883. TL 555c 4th order butterworth 50hz ax292 MAX291CPA max2960 PDF

    Untitled

    Abstract: No abstract text available
    Text: V Z À I/VHITE /MICROELECTRONICS WPD8M72-XMDC 8Mx72 DRAM D IM M FEATURES GENERAL DESCRIPTION • The WPD8M72-XMDC is a 8M x 72 bit Dynamic RAM high density memory module. The module consists of thirty-six 4M x 4 bit DRAMs in 24-pin TSOP packages. The DRAMs are


    OCR Scan     		WPD8M72-XMDC 8Mx72 WPD8M72-XMDC 24-pin 168-pin WPD8M72-60MDC 110ns WPD8M72-70MDC 130ns PDF

    Untitled

    Abstract: No abstract text available
    Text: February 1990 Edition 1.0 FUJITSU DATA SHEET MB81C1001-70U-80U-10U-12L CMOS 1,048,576 BIT NIBBLE MODE DYNAMIC RAM CMOS 1M x 1 Bit Nibble Mode DRAM T h e Fujitsu M B 81C 1001 Is a C M O S , fully decoded dynam ic R A M organized as 1 ,0 4 8 ,5 7 6 w ords x 1 bit. T h e M B 81C 1001 has been designed for m ainfram e


    OCR Scan     		MB81C1001-70U-80U-10U-12L MB81C1001-70L MB81C1001-80L MB61C1001-1 MB81C1001-12L 26-LEAD LCC-26P-M04) C26064S-1C PDF

    Untitled

    Abstract: No abstract text available
    Text: FAST PAGE MODE DRAM MODULE CMOS 4M x 72 Bit Fast Page Mode DRAM Module • DESCRIPTION The Fujitsu MB85317A is a fully decoded, CMOS Dynamic Random Access Memory DRAM module consisting of eighteen MB8116400A devices. The MB85317A is optimized for those applications requiring high speed, high


    OCR Scan     		MB85317A MB8116400A 168-pad F9703 PDF

    Untitled

    Abstract: No abstract text available
    Text: HYPER PAGE MODE DRAM MODULE CMOS 1,048,576 x 32 Bit Hyper Page Mode DRAM Module • DESCRIPTION The Fujitsu MB85343C is a fully decoded, CMOS dynam ic random access memory DRAM module consisting of eight MB814405C devices. The MB85343C is optimized for those applications requiring high speed, high


    OCR Scan     		MB85343C MB814405C 32bits 72-pad F9703 PDF

    Untitled

    Abstract: No abstract text available
    Text: MEMORY CMOS1M x 16 BIT FAST RAGE MODE DYNAMIC RAM CMOS 1,048,576 x 16 BIT Fast Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB8118160A is a fully decoded CMOS Dynamic RAM DRAM th a t contains 16,777,216 memory cells accessible in 16-bit increments. The M B8118160A features a.% st pa$e” .mode of operation whereby high­


    OCR Scan     		MB8118160A 16-bit B8118160A F9704 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM44C4003A, KM44C4103A CMOS DRAM 4 M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode Quad C 5 5 DRAMs. Fast Page Mode offers high speed random access of memory cells within the. same row. Refresh cycle 2K Ref. or 4K Ref. , access


    OCR Scan     		KM44C4003A, KM44C4103A C55-before-ES5 PDF

    41C1000

    Abstract: KM41C1000CJ-7 KM41C1000C-6 1mx1 DRAM DIP 41C100 KM41C1000C-8 KM41C1000CJ7
    Text: KM41C1000C CMOS DRAM 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000C is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		KM41C1000C KM41C1000C 576x1 KM41C1000C-6 KM41C1000C-7 KM41C100 20-LEAD 41C1000 KM41C1000CJ-7 1mx1 DRAM DIP 41C100 KM41C1000C-8 KM41C1000CJ7 PDF

    PROFET BTS 410E

    Abstract: BTS412B ScansUX7 410D 410E 410F 410H bts 412b
    Text: SIEMENS BTS 412B PROFET • High-side switch • Short-circuit protection • Overtemperature protection • Overload protection • Load dump protection1 • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Reverse battery protection v


    OCR Scan     		T0220AB/5 BTS412B C67078-S5300-A9 E3040 C67078-S5300-A10 E3043 C67078-S5300-A16 CPT05547 E3062 PROFET BTS 410E ScansUX7 410D 410E 410F 410H bts 412b PDF

    LM329C

    Abstract: No abstract text available
    Text: r r i \ TECHNOLOGY [ \m _ LM129/LM329 6.9V Precision Voltage Reference F€RT JR€S IXSCRIPTIOfl • ■ ■ ■ The LM129 temperature compensated 6.9 Volt zener references provide excellent stability over time and temperature, very low dynamic impedance and a wide


    OCR Scan     		20/nV LM129/LM329 LM129 LM329C PDF

    Untitled

    Abstract: No abstract text available
    Text: »HYUNDAI HYM536A414B M-Series 4M X 36-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM536A414B is a 4 M x 36-bit EDO mode CMOS DRAM module consisting of nineHV5117404B in 24/26 pin SOJ on a 72 pm glass-epoxy printed circuit board. O.inF and O.OlnF decoupling capacitor is mounted for each


    OCR Scan     		HYM536A414B 36-bit nineHV5117404B HYM536A414BM/BSLM HYM536A414BMG/BSLMG A0-A10) DQ0-DQ35) 1CE16-10-APR96 PDF