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    41C100 Price and Stock

    E-Switch Inc RB141C1000-114

    SWITCH ROCKER SPST 15A 125V
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    DigiKey RB141C1000-114 Bulk 3,079 1
    • 1 $1.58
    • 10 $1.419
    • 100 $1.2217
    • 1000 $1.0499
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    Mouser Electronics RB141C1000-114 2,309
    • 1 $1.58
    • 10 $1.27
    • 100 $1.08
    • 1000 $0.998
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    Newark RB141C1000-114 Bulk 3,000
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    TME RB141C1000-114 3,000
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    E-Switch Inc PR141C1000-116-ACC-F03-1

    SWITCH PUSHBUTTON SPST 16A 125V
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    DigiKey PR141C1000-116-ACC-F03-1 Bulk 1,445 1
    • 1 $3
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    • 100 $2.68733
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    Mouser Electronics PR141C1000-116-ACC-F03-1
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    Newark PR141C1000-116-ACC-F03-1 Bulk 3,000
    • 1 $2.77
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    E-Switch Inc RB141C1000-135

    SWITCH ROCKER SPST 15A 125V
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    DigiKey RB141C1000-135 Bulk 492 1
    • 1 $1.64
    • 10 $1.468
    • 100 $1.468
    • 1000 $1.08656
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    Mouser Electronics RB141C1000-135 2,277
    • 1 $1.56
    • 10 $1.33
    • 100 $1.16
    • 1000 $1.04
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    Newark RB141C1000-135 Bulk 3,000
    • 1 $1.48
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    • 1000 $1.48
    • 10000 $1.28
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    TME RB141C1000-135 3,000
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    New Advantage Corporation RB141C1000-135 500 1
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    E-Switch Inc PR141C1000-116

    SWITCH PUSHBUTTON SPST 16A 125V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PR141C1000-116 Bulk 400 1
    • 1 $2.34
    • 10 $2.34
    • 100 $1.8058
    • 1000 $1.52721
    • 10000 $1.52721
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    Mouser Electronics PR141C1000-116
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    Newark PR141C1000-116 Bulk 283 3,000
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    • 100 $1.47
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    Amphenol CONEC 241C10060X-S

    CONN D-SUB
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    DigiKey 241C10060X-S Bulk
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    41C100 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    41C1000 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    41C100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NEC D2732

    Abstract: 41C1000 41256 81c4256 6264 SRAM 44256 dram NEC 2732 nec 4217400 814400 Texas Instruments eprom 2732
    Text: New Page 1 DRAM ORGANIZATION/ DENSITY FUJISTU GOLDSTAR HITACHI HYNDAI MB GM HM HY 256K x 1 256K 81256 71C256 51256 MICRON MT 53C256 1256 MITSUBISHI M5M 4256 1M x 1(1M) 81C1000 71C1000 511000 531000 4C1024 41000 256K x 4(1M) 81C4256 71C4256 514256 534256 4C4256


    Original     		PDF 71C256 53C256 81C1000 71C1000 4C1024 81C4256 71C4256 4C4256 71C4400 4C4001 NEC D2732 41C1000 41256 6264 SRAM 44256 dram NEC 2732 nec 4217400 814400 Texas Instruments eprom 2732

    DRAM 18DIP

    Abstract: KM41C1000CSL-6 KM41C1000CSL-7 KM41C1000CSL-8 DRAM 256kx4
    Text: SAMSUNG ELE CTRONICS INC b?E ]> Wt 7 ^ 4 1 4 2 41C1000CSL 0015414 ?hh SM6K CM O S DRAM 1Mx1 Bit CM O S Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Sam sun g KM 41C1000CSL is a C M O S high speed 1,048,576x1 Dynamic Random A cce ss Memory. Its


    OCR Scan     		PDF KM41C1000CSL KM41C1000CSL-6 110ns KM41C1000CSL-7 130ns KM41C1000CSL-8 150ns 100fiA 100/A cycle/128ms DRAM 18DIP DRAM 256kx4

    KM41C1000BJ

    Abstract: KM41C1000B KM41C1000BP KM41C1000B-7 41C1000 KM41C1000B-8 41C1000B
    Text: 41C1000B CMOS DRAM 1 M x 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: • • • • • • • • • tnAc tcAc •nc 41C1000B-6 60ns 20ns 110ns 41C1000B-7 70ns 20ns 130ns 41C1000B-8 80ns 20ns


    OCR Scan     		PDF KM41C1000B KM41C1000B-6 KM41C1000B-7 KM41C1000B-8 KM41C1000B-10 100ns 110ns 130ns 150ns 180ns KM41C1000BJ KM41C1000B KM41C1000BP 41C1000 41C1000B

    Untitled

    Abstract: No abstract text available
    Text: MN 4 1 C 1 0 0 0 A / Â L / À S J - 06/07/08 SPECIFICATIONS 20 1 1M BIT □ 1 bit. CMOS processing wide operating r a n g e and is s u i t a b l e to a p p l i c a t i o n s r a n g i n g to c o n s u m e r □ RAM is t h e new g e n e r a t i o n C M O S d y n a m i c RAM o r g a n i z e d


    OCR Scan     		PDF MN41C1000A MN41C1000A/AL/ASJ 10PIN

    Untitled

    Abstract: No abstract text available
    Text: M N 4 1C 1 0 0 2 A / A L / A S J -06/07/08 S P E C I F I C A T I O N S N N \ H - 1 M □ B I T C M O S D Y N A M I C R A M DESCRIPTIONS The M N 4 1 C 1 0 0 2 A is the new g e n e r a t i o n CMOS d ynam ic RAM organize d 1,048,576 words by I bits. With advanc ed CMOS p r o c e s s i n g tec h n o l o g y and circuit configuration,


    OCR Scan     		PDF MN41C1002; M\41C1002A/AL/ASJ

    Untitled

    Abstract: No abstract text available
    Text: KMM591000AN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 591000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung KM M 591000AN consist of two 4M bit DRAMs KM 44C1000AJ - 1M X 4 in 20-pin SOJ package and


    OCR Scan     		PDF KMM591000AN 591000AN 44C1000AJ 20-pin 41C1000BJ 30-pin 591000AN- 130ns

    TCA 290

    Abstract: 41C1000 km44c1000aj 591000AN
    Text: KMM591000AN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M M 591 000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung K M M 591000AN consist of two 4M bit DRAMs KM 44C1000AJ - 1M X 4 in 20-pin SOJ package and


    OCR Scan     		PDF KMM591000AN 000AN 591000AN 44C1000AJ 20-pin 41C1000BJ 30-pin 22/iF TCA 290 41C1000 km44c1000aj

    41C1000

    Abstract: KMM591000AN8 max5516 KMM591000AN10 KMM591000AN-8 KMM591000AN-7 41C1000BJ
    Text: KMM591000AN DRAM MODULES 1 MX 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 591000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung KM M 591000AN consist of two 4M bit DRAMs KM 44C1000AJ - 1 M X 4 in 20-pin SOJ package and


    OCR Scan     		PDF KMM591000AN 591000AN 44C1000AJ 20-pin 41C1000BJ 30-pin 22fiF 41C1000 KMM591000AN8 max5516 KMM591000AN10 KMM591000AN-8 KMM591000AN-7

    41c1000

    Abstract: AS11D KM41C1000CP
    Text: KM41C1OOOC/CL/CSL CMOS DRAM 1M x 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: 41C1000C/CL/CSL-6 tR A C tC A C tR C 60ns 15ns 110ns 41C1000C/CL/CSL-7 70ns 20ns 130ns 41C1000C/CLÆSL-8 80ns 20ns 150ns •


    OCR Scan     		PDF KM41C1OOOC/CL/CSL KM41C1000C/CLVCSL KM41C1000C 20-LEAD 41c1000 AS11D KM41C1000CP

    41C1000

    Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
    Text: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258


    OCR Scan     		PDF 41C256 41C257 41C258 41C464 41C466 41C1000 44C256 44C258 44C1002 TC51257 fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b hn62324 M7202A

    41C464

    Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
    Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page


    OCR Scan     		PDF 41C256 41C257 41C258 41C464 41C466 41C1000 41C1002 44C256 44C258 41C4000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100

    41C1000

    Abstract: KMM591000AN 41C1000BJ
    Text: MM591000AN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 591000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung KMM591 OOOAN consist of two 4M bit DRAMs KM 44C1000AJ - 1M X 4 in 20-pin SOJ package and


    OCR Scan     		PDF MM591000AN 591000AN KMM591 44C1000AJ 20-pin 41C1000BJ 30-pin 22jiF KMM591OOOAN 41C1000 KMM591000AN

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC 42E ]> B 7Tb*4142 001003b S Ë3SÎ1GK 41C1000BL CMOS DRAM 1MX1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung 41C1000BL is a C M O S high speed 1,048,576 x 1 Dynamic Random Access Memory. Its de­


    OCR Scan     		PDF 001003b KM41C1000BL KM41C1000BL KM41C1000BL- 110ns KM41C1Ã 130ns 150ns KM41C1000BL-10

    Untitled

    Abstract: No abstract text available
    Text: b?E J> m SAMSUNG ELECTRONICS INC 7 ^ 4 1 4 2 0Ü1S3ÖG SS3 41C1000C CMOS DRAM 1Mx1 Bit C M O S Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • P e rfo rm a n c e ra n g e : T h e S am sung 41C1000C is a C M O S high speed 1,048,576x1 D ynam ic R andom A ccess M emory. Its


    OCR Scan     		PDF KM41C1000C KM41C1000C 576x1 110ns KM41C1000C-7 130ns KM41C1000C-8 KM41C1000C-6 150ns

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM 41C1000CL 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • P erform ance range: The S am sung 41C1000CL is a CMOS high speed 1,048,576x1 D ynam ic Random A cce ss M em ory. Its design is o p tim ized fo r high perform ance ap p lica tio n s


    OCR Scan     		PDF KM41C1000CL KM41C1000CL 576x1 KM41C1000CL-6 110ns KM41C1000CL-7 130ns KM41C1000CL-8 150ns 20-LEAD

    KM41C1000BJ

    Abstract: KM44C256BP KM41C1000BP KM41C1001BP KM41C256P KM44C256BJ km4164 KM41C256J KM44C1000LJ KM41C464Z
    Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Num ber Capacity 64K b it KM4164BP 256 K b it KM41C256P I [ I Technology Features Packages R em ark 100/120/150 NM OS Page M ode 16 Pin DIP 70/80/100 70/80/100 70/80/100 70/80/100 Fast Page Fast Page


    OCR Scan     		PDF KM4164BP KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C1000BJ KM44C256BP KM41C1000BP KM41C1001BP KM44C256BJ km4164 KM44C1000LJ KM41C464Z