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    44C1000 Search Results

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    44C1000 Price and Stock

    E-Switch Inc PR144C1000-134

    SWITCH PB SPST 16A 125V
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    DigiKey PR144C1000-134 Bulk 3,000
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    Newark PR144C1000-134 Bulk 3,000
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    E-Switch Inc PR144C1000-104

    SWITCH PUSH SPST-NO 16A 125V
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    Alpha Wire 2244C SL005

    Multi-Conductor Cables 18 AWG, 4 Pair Communication Cable, Shielded, 100 ft - Slate
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    Mouser Electronics 2244C SL005
    • 1 $562.71
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    Alpha Wire 2444C SL001

    Multi-Conductor Cables 12AWG 2C SHIELD 1000FT SPOOL SLATE
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    Mouser Electronics 2444C SL001
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    E-Switch Inc PR144C1000-136

    Pushbutton Switches
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    Mouser Electronics PR144C1000-136
    • 1 $2.2
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    Newark PR144C1000-136 Bulk 3,000
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    44C1000 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    44C1000 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    44C1000 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    KMM581000An-8

    Abstract: No abstract text available
    Text: DRAM MODULES KMM581000AN 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 581000AN is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung KM M 581000A N consist of two 4M bit DRAMs KM 44C1000AJ - 1 M X 4 in 20-pin SOJ package


    OCR Scan     		KMM581000AN 581000AN 81000A 44C1000AJ 20-pin 30-pin 130ns 581000AN- 150ns KMM581000An-8 PDF

    44c1000

    Abstract: No abstract text available
    Text: 44C1000AL CMOS DRAM 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: tRAC • • • • • • • tcAC tRC 130ns KM 44C1000AL- 7 70 n s 2 0 ns KM44C1OOOAL- 8 80ns 2 0 ns 1 50 ns K M 4 4 C 1 0 0 0 A L -1 0


    OCR Scan     		KM44C1000AL 44C1000AL- KM44C1OOOAL- 130ns 20-LEAD 44c1000 PDF

    Untitled

    Abstract: No abstract text available
    Text: 44C1000ASL CMOS DRAM 1M X4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: tR A C tC A C tR C KM 44C1000ASL- 7 70 ns 20 ns 130ns KM 44C 1 00 0A S L - 8 80ns 20 ns 150ns K M 4 4 C 10OOASL-10 100ns 25 n s 18 0 n s


    OCR Scan     		KM44C1000ASL 44C1000ASL- 130ns 150ns 10OOASL-10 100ns 20-LEAD PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM591000AN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 591000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung KM M 591000AN consist of two 4M bit DRAMs KM 44C1000AJ - 1M X 4 in 20-pin SOJ package and


    OCR Scan     		KMM591000AN 591000AN 44C1000AJ 20-pin 41C1000BJ 30-pin 591000AN- 130ns PDF

    TCA 290

    Abstract: 41C1000 km44c1000aj 591000AN
    Text: KMM591000AN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M M 591 000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung K M M 591000AN consist of two 4M bit DRAMs KM 44C1000AJ - 1M X 4 in 20-pin SOJ package and


    OCR Scan     		KMM591000AN 000AN 591000AN 44C1000AJ 20-pin 41C1000BJ 30-pin 22/iF TCA 290 41C1000 km44c1000aj PDF

    41C1000

    Abstract: KMM591000AN8 max5516 KMM591000AN10 KMM591000AN-8 KMM591000AN-7 41C1000BJ
    Text: KMM591000AN DRAM MODULES 1 MX 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 591000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung KM M 591000AN consist of two 4M bit DRAMs KM 44C1000AJ - 1 M X 4 in 20-pin SOJ package and


    OCR Scan     		KMM591000AN 591000AN 44C1000AJ 20-pin 41C1000BJ 30-pin 22fiF 41C1000 KMM591000AN8 max5516 KMM591000AN10 KMM591000AN-8 KMM591000AN-7 PDF

    km44c1000aj

    Abstract: KMM581000AN
    Text: KMM581000AN DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 581000AN is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung KMM581 OOOAN consist of two 4M bit DRAMs KM 44C1000AJ - 1 M X 4 in 20-pin SOJ package


    OCR Scan     		KMM581000AN 581000AN KMM581 44C1000AJ 20-pin 30-pin KMM581OOOAN km44c1000aj KMM581000AN PDF

    KM44C1000J

    Abstract: KM44C1OOOZ KM44C1OOOJ electronics symbol
    Text: SAMSUNG SEMICONDUCTOR INC S3E D 7TbmMS D0GÔ420 7 ig Electronics SAMSUNG K M 4 4 C 1 0 0 0 J /Z r - ^ - 3 3 - I7 □ PRELIMINARY KM 44C1000J/Z Fast Page Mode 1 M X 4 Bit CMOS Dynamic RAM FEBRUARY 1990 GENERAL DESCRIPTION FEATURES The Samsung KM44C1OOOJ/Z is a high speed CMOS


    OCR Scan     		44C1000J/Z KM44C1OOOJ/Z KM44C1 20-LEAD KM44C1000J KM44C1OOOZ KM44C1OOOJ electronics symbol PDF

    41C1000

    Abstract: KMM591000AN 41C1000BJ
    Text: MM591000AN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 591000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung KMM591 OOOAN consist of two 4M bit DRAMs KM 44C1000AJ - 1M X 4 in 20-pin SOJ package and


    OCR Scan     		MM591000AN 591000AN KMM591 44C1000AJ 20-pin 41C1000BJ 30-pin 22jiF KMM591OOOAN 41C1000 KMM591000AN PDF

    44C1000AL

    Abstract: No abstract text available
    Text: 44C1000AL CMOS DRAM 1 M X 4 Bit C M O S Dynam ic R A M with F ast P age M o d e FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM 44C1000AL is a high speed CMOS 1 ,0 48 ,5 7 6 bit x 4 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		KM44C1000AL 44C1000AL KM44C1000AL 20-LEAD PDF

    Untitled

    Abstract: No abstract text available
    Text: 44C1000ASL CMOS DRAM 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • The Samsung K M 4 4 C 1 0 0 0 A S L is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random A ccess Memory. Its design is optimized for high perform ance applications


    OCR Scan     		KM44C1000ASL 130ns 10OOASL-10 180ns 20-LEAD PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E D • TTbMlMB 001325^ aflfl ■ S M G K 44C1000AL CMOS DRAM 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM44C1OOOAL is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random A ccess Memory.


    OCR Scan     		KM44C1000AL KM44C1OOOAL 130ns OOOAL-10 180ns 20-LEAD PDF

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM 44C1000AL 1M X4 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • P e rfo rm a n c e range: tR A C tcAC KM44C1OOOAL- 7 70ns 2 0 ns KM 44C 1 OOOAL- 8 80ns I 2 0 ns 1 50 ns 25ns i 180ns K M 4 4 C 1 0 0 0 A L -1 0 10 0ns tRC


    OCR Scan     		KM44C1000AL KM44C1OOOAL- 180ns 20-LEAD PDF

    Untitled

    Abstract: No abstract text available
    Text: 44C1000ASL CMOS DRAM 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • P e rfo rm a n c e ran ge: tR A C tC A C tR C K M 44C1 000A S L- 7 7 0 ns 2 0 ns 1 3 0 ns K M 44C1 000A S L- 8 80ns 2 0 ns 1 5 0 ns K M 4 4 C 10OOASL-1 0


    OCR Scan     		KM44C1000ASL KM44C1 000ASL- 000ASL-1 100ns cycles/256ms 70/80/100ns> PDF

    Untitled

    Abstract: No abstract text available
    Text: 44C1000ASL CMOS DRAM 1M X4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • The Samsung K M 4 4 C 1 0 0 0 ASL is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random A ccess Memory. Its design is optimized for high perform ance applications


    OCR Scan     		KM44C1000ASL 130ns 150ns 180ns 20-LEAD PDF

    Untitled

    Abstract: No abstract text available
    Text: KM44C1OOOBSL CMOS DRAM 1M x 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1 OOOBSL is a high speed CMOS 1,048,516 x 4 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		KM44C1OOOBSL KM44C1000BSL-6 KM44C1000BSL-7 KM44C1000BSL-8 110ns 130ns 150ns KM44C1 PDF

    KM44C1000C

    Abstract: KM44C1000CZ
    Text: CMOS DRAM KM44C1OOOC/CL/CSL 1M x 4 B it CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: tRAC tCAC tnc 44C1000C/CL7CSL-5 50ns 13ns 90ns 44C1000C/CL/CSL-6 60ns 15ns 110ns 44C1000C/CL/CSL-7 70ns 20ns 130ns 44C1000C/CUCSL-8


    OCR Scan     		KM44C1OOOC/CL/CSL KM44C1000C/CL7CSL-5 KM44C1000C/CL/CSL-6 KM44C1000C/CL/CSL-7 KM44C1000C/CUCSL-8 110ns 130ns 150ns KM44C1000C/CL/CSL KM44C1000C/CLVCSL KM44C1000C KM44C1000CZ PDF

    KMM581000AN

    Abstract: 581000A KMM581000A
    Text: DRAM MODULES KMM581000AN 1M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: KMM581 OOOAN- 7 • • • • • • • tR A C tC A C tR C 70ns 20ns 130ns KMM581 OOOAN- 8 80ns 20ns 150ns KMM581 OOOAN-10 100ns 25ns 180ns Fast Page Mode operation


    OCR Scan     		KMM581000AN KMM581 OOOAN-10 100ns 130ns 150ns 180ns 581000AN KMM581000AN 581000A KMM581000A PDF

    KMM5322000C

    Abstract: 44C10 KMm5322000cv KMM5322
    Text: DRAM MODULE 8 Mega Byte KMM5322000CV/CVG Fast Pagek Mjbde 2Mx32 DRAM SIMM, 5V GENERAL DESCRIPTION FEATURES The Samsung KM M 5322000CV is a 2M bit x 32 • Performance Range: tRAC 50ns 60ns 70ns 80ns D ynam ic RAM high density m em ory module. The Sam sung


    OCR Scan     		KMM5322000CV/CVG 2Mx32 5322000CV 20-pin 72-pin KMM5322000CV KMM5322000C 44C10 KMM5322 PDF

    44c1000

    Abstract: KM44C1000
    Text: 44C1000/L CMOS DRAM 1M X4 Bit CMOS Dynamic RAM with Fast Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 4 4 C 1 0 0 0 L is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 dynamic Random A ccess Memory. Its design is optimized for high perform ance applications


    OCR Scan     		KM44C1000/L 44C1000 KM44C1 20-LEAD KM44C1000 PDF

    44C1000AP

    Abstract: No abstract text available
    Text: CMOS DRAM 44C1000A 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 4 C 1 0 0 0 A is a high speed CMOS 1 ,0 4 8 ,5 7 6 b it X 4 Dynam ic Random A cce ss M em ory. Its design is optimized for high perform ance applications


    OCR Scan     		KM44C1000A 20-LEAD 44C1000AP PDF

    V1000D

    Abstract: CA5B KM44V1000D C1000D
    Text: 44C1000DT ELECTRONICS CMOS DRAM 1M X 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access


    OCR Scan     		KM44C1000DT KM44ClOOODT V1000D CA5B KM44V1000D C1000D PDF

    44C1000

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC 42E 44C1000/L T> a 7^4142 001G2G4 - ^ 0 fflSflüK CMOS DRAM 1MX4 Bit CMOS Dynamic RAM with Fast Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 44C 1000/L is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 dynamic Random Access Memory.


    OCR Scan     		KM44C1000/L 001G2G4 1000/L 180ns 20-LEAD 44C1000 PDF

    Untitled

    Abstract: No abstract text available
    Text: S A MS UN G E L E C T R O N I C S INC b4E » • 7^^142 D G 1 3 2 7 b 3b7 « S M S K 44C1000ASL CMOS DRAM 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 4 C 1 0 0 0 ASL is a high speed CMOS


    OCR Scan     		KM44C1000ASL KM44C1OOOASL- 130ns 1000ASL- 150ns OOOASL-10 20-LEAD PDF