200P3S
Abstract: BSO200P03S IEC61249-2-21
Text: BSO200P03S H OptiMOS -P Power-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -30 V R DS on ,max 20 mΩ ID -9.1 A • Logic level • 150°C operating temperature PG-DSO-8 • Qualified according JEDEC for target applications
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BSO200P03S
IEC61249-2-21
200P3S
200P3S
IEC61249-2-21
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200P3S
Abstract: BSO200P03S
Text: BSO200P03S OptiMOS -P Small-Signal-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -30 V R DS on ,max 20 mΩ ID -9.1 A • Logic level • 150°C operating temperature • Avalanche rated P-DSO-8 • dv /dt rated • Ideal for fast switching buck converter
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Original
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BSO200P03S
200P3S
25erous
200P3S
BSO200P03S
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PDF
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200p3s
Abstract: BSO200P03S
Text: BSO200P03S OptiMOS -P Power-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -30 V R DS on ,max 20 mΩ ID -9.1 A • Logic level • 150°C operating temperature • Avalanche rated P-DSO-8 • dv /dt rated • Ideal for fast switching buck converter
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Original
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BSO200P03S
200P3S
200p3s
BSO200P03S
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PDF
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200P3S
Abstract: No abstract text available
Text: BSO200P03S H OptiMOS -P Power-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -30 V R DS on ,max 20 mΩ ID -9.1 A • Logic level • 150°C operating temperature PG-DSO-8 • Qualified according JEDEC for target applications
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Original
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BSO200P03S
IEC61249-2-21
200P3S
200P3S
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PDF
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