ZTX855
Abstract: VCB-200V DSA003778
Text: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX855 ELECTRICAL CHARACTERISTICS at Tamb = 25°C MIN. TYP. MAX. UNIT CONDITIONS. 0.88 1 V IC=4A, VCE=5V* PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio
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ZTX855
100mA,
50MHz
100mA
Am100
100ms
ZTX855
VCB-200V
DSA003778
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2n3583
Abstract: 2N3585
Text: 2N3583 2N3584 2N3585 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3583 series devices are silicon NPN transistors designed for high speed switching and high voltage amplifier applications. MARKING: FULL PART NUMBER
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2N3583
2N3584
2N3585
2N3583
CONDITI200Î
100mA
2N3585
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fzt855
Abstract: 100 Amp current 1000 volt diode FZT955 DSA003675
Text: SOT223 NPN SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTOR FZT855 ISSUE 4 - NOVEMBER 2001 ✪ FEATURES * Up to 5 Amps continuous collector current, up to 10 Amp peak C * * Very low saturation voltage Excellent hFE specified up to 10 Amps E PARTMARKING DETAIL COMPLEMENTARY TYPE -
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OT223
FZT855
FZT955
100ms
fzt855
100 Amp current 1000 volt diode
FZT955
DSA003675
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200V transistor npn 10a
Abstract: transistor 200V 100MA NPN 2N3584 2N3583 200v 10a npn transistor 200V 100MA NPN
Text: 2N3583 2N3584 2N3585 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3583 Series types are NPN Silicon Transistors designed for high speed switching and high voltage amplifier applications. MARKING: FULL PART NUMBER
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2N3583
2N3584
2N3585
500mA
200mA,
100mA,
200V transistor npn 10a
transistor 200V 100MA NPN
200v 10a npn transistor
200V 100MA NPN
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Untitled
Abstract: No abstract text available
Text: SOT223 NPN SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTOR FZT855 ISSUE 4 - NOVEMBER 2001 ✪ FEATURES * Up to 5 Amps continuous collector current, up to 10 Amp peak C * * Very low saturation voltage Excellent hFE specified up to 10 Amps E PARTMARKING DETAIL COMPLEMENTARY TYPE -
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OT223
FZT855
FZT955
100ms
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX855 ISSUE 2 MARCH 94 FEATURES * 150 Volt VCEO * 4 Amps continuous current * Up to 10 Amps peak current * Very low saturation voltage * Ptot= 1.2 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS.
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ZTX855
po100
100ms
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FZT757
Abstract: 200V 100MA NPN t6757 FZT657
Text: Obsolete. Nearest alternative is ZDT6753 SM-8 COMPLEMENTARY MEDIUM POWER TRANSISTORS ZDT6757 ZDT6757 ISSUE 1 - NOVEMBER 1995 C1 B1 C1 E1 C2 B2 C2 E2 NPN TRANSISTOR ELECTRICAL CHARACTERISTICS at Tamb = 25°C . NPN PNP SM-8 (8 LEAD SOT223) PARTMARKING DETAIL T6757
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ZDT6753
ZDT6757
T6757
OT223)
-10mA,
-160V,
-200V,
-100mA,
-10mA*
FZT757
200V 100MA NPN
t6757
FZT657
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complementary npn-pnp
Abstract: complementary npn-pnp power transistors zdt6757 FZT657 T6757 NPN/PNP transistor sot223 FZT757 200V 100MA NPN DSA003725
Text: SM-8 COMPLEMENTARY MEDIUM POWER TRANSISTORS ZDT6757 ZDT6757 ISSUE 1 - NOVEMBER 1995 C1 B1 C1 E1 C2 B2 C2 E2 NPN TRANSISTOR ELECTRICAL CHARACTERISTICS at Tamb = 25°C . NPN PNP SM-8 (8 LEAD SOT223) PARTMARKING DETAIL T6757 ABSOLUTE MAXIMUM RATINGS. PARAMETER
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ZDT6757
-160V,
-200V,
-100mA,
-10mA*
complementary npn-pnp
complementary npn-pnp power transistors
zdt6757
FZT657
T6757
NPN/PNP transistor sot223
FZT757
200V 100MA NPN
DSA003725
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ZTX415
Abstract: transistor 200V 100MA NPN AVALANCHE TRANSISTOR DSA003766 3171 i.c
Text: NPN SILICON PLANAR AVALANCHE TRANSISTOR ZTX415 ISSUE 4 - NOVEMBER 1995 FEATURES * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current Pulse width=20ns * Low inductance package APPLICATIONS * Laser LED drivers * Fast edge generation
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ZTX415
200mA
620pF
100mA
20MHz
100MHz
ZTX415
transistor 200V 100MA NPN
AVALANCHE TRANSISTOR
DSA003766
3171 i.c
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NTE124
Abstract: 325V
Text: NTE124 Silicon NPN Transistor High Voltage Power Output Description: The NTE124 is a general purpose transistor in a TO66 type package designed for high speed switching, linear amplifier applications, high voltage operational amplifiers, switching regulators, converters,
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NTE124
NTE124
100mA
10MHz
250mA,
100mA,
10MHz,
100kHz
325V
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transistor c 3181
Abstract: ZTX457 200V 100MA NPN DSA003767
Text: NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX457 ISSUE 2 MARCH 1994 FEATURES * 300 Volt VCEO * 0.5 Amp continuous current * Ptot= 1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage
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ZTX457
100mA,
20MHz
transistor c 3181
ZTX457
200V 100MA NPN
DSA003767
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2N3738
Abstract: No abstract text available
Text: 2N3738 2N3739 SILICON NPN POWER TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3738 and 2N3739 are silicon epitaxial NPN power transistors designed for high voltage amplifier applications. MARKING: FULL PART NUMBER
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2N3738
2N3739
2N3738
2N3738)
2N3739)
250mA,
100mA
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2N4298
Abstract: No abstract text available
Text: 2N4296 2N4298 2N4299 SILICON NPN POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4296, 2N4298, and 2N4299 devices are silicon NPN power transistors designed for power amplifier and switching applications. MARKING: FULL PART NUMBER
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2N4296
2N4298
2N4299
2N4296,
2N4298,
2N4299
100mA
100mA,
2N4298
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transistor marking code 12W
Abstract: transistor marking code 12W 12 DIODES incorporated
Text: A Product Line of Diodes Incorporated ZTX855 150V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR Features • • • • • • • • Mechanical Data • • • • • BVCEO > 150V Maximum Continuous Current IC cont = 4A Up to 10A Peak Current Low Saturation Voltage
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ZTX855
AEC-Q101
J-STD-020
ZTX855STZ
ZTX855
DS33136
transistor marking code 12W
transistor marking code 12W 12
DIODES incorporated
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Untitled
Abstract: No abstract text available
Text: ZTX656 Not Recommended for New Design Please Use ZTX657 NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS ZTX656 ZTX657 ISSUE 2 JULY 94 FEATURES * 300 Volt VCEO * 0.5 Amp continuous current * Ptot=1 Watt TYPICAL CHARACTERISTICS 1.8 100 hFE - Normalised Gain %
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ZTX656
ZTX657
ZTX657
IC/10
100ms
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSU E 2 - MARCH 94_ FE A T U R E S * 150 Volt Vc 'C E O * * * 4 Am ps continuous current Up to 10 Am ps peak current Very low saturation voltage * Ptot= 1.2 Watt
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OCR Scan
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100mA,
50MHz
100mA
300ns.
ZTX855
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200V transistor npn 10a
Abstract: 2N3583 2N3584 2N3585 200V 100MA NPN transistor 200V 100MA NPN
Text: HataSheet 2N3583 2N3584 2N3585 CGVIIiu1 acniiwiiiinuwKor %iirpa NPN SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-66 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3583 series types are Silicon NPN Transistors designed for high speed
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2N3583
2N3584
2N3585
2N3583
125mA
100mA
100mA
200V transistor npn 10a
2N3584
2N3585
200V 100MA NPN
transistor 200V 100MA NPN
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR M EDIUM POWER HIGH CURRENT TRANSISTOR ZTX855 — IS S U E 2 - M A R C H 94. FEATURES * * 150 Volt V CE0 4 A m p s continuous current * * Up to 10 A m p s peak current Very low saturation voltage
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OCR Scan
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ZTX855
001G35S
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2N5655
Abstract: 2N5656 2N5657 2525pF
Text: DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5655 series types are silicon NPN plastic power transistors manufactured by the epitaxial planar process designed for horizontal driver and high voltage amplifier and switching applications. MAXIMUM RATINGS Tc=25°C unless o therwise noted
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2N5655
2N5655
2N5656
2N5657
100mA
100mA,
250mA,
500mA,
2N5656
2N5657
2525pF
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Untitled
Abstract: No abstract text available
Text: c Transistor minil^eel' SOT23 SOT23 Case NPN minllfecl 4 - A _Iyi»_ — jA t u n in g s mtnlBasT Balk Ic h FE @lc mA M in -M a x VCE - - - - 60~ 20- 100 p c s VCEO V 73-8400 73-8410 73-0010 73-0918 53-8400 53-8410 53-0010 53-0918 40V 25mA 40V 25mA 25V 15V 350mA
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350mA
380MHz
650MHz
600MHz
200mA
300MHz
100mA
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Untitled
Abstract: No abstract text available
Text: Transistors SOT23 B SOT23 Case NPN miniReel a » miniBag Order Order Number Number l ^ 7 } Type 500 pcs. ^ 100 pcs. 0 NPN General Purpose MMBT2369 73-2369 53-2369 BC818-16 73-8181 53-8181 BC818-25 73-8182 53-8182 BC818-40 73-8183 53-8183 BC848A 73-8481 53-8481
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OCR Scan
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MMBT2369
BC818-16
BC818-25
BC818-40
BC848A
BC848B
BC848C
BCW31
BCW32
BCW33
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Untitled
Abstract: No abstract text available
Text: SM-8 COMPLEMENTARY M EDIU M POWER TRANSISTORS ZDT6757 ISSUE 1 - NOVEMBER 1995 - ABSOLUTE M A X IM U M RATINGS. PARAM ETER SY M B O L NPN PNP Collector-Base Voltage VCBO 300 -300 V Collector-Emitter Voltage V CEO 300 -300 V Emitter-Base Voltage
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OCR Scan
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ZDT6757
-100mA,
lc--100mA,
100mA,
-10mA,
20MHz
FZT757
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Untitled
Abstract: No abstract text available
Text: SOT223 NPN SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES * Up to 5 Amps continuous collector current, up to 10 Amp peak * * FZT855 - Very low saturation voltage Excellent hFEspecified up to 10 Amps
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OCR Scan
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OT223
FZT855
FZT955
500mA*
-100mA,
50MHz
1-100mA
100mA,
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2N4299
Abstract: 2N4296 vbe 10v, vce 500v NPN Transistor 2N4298 transistor 200V 100MA NPN
Text: Datasheet 2N4296 2N4298 2N4299 1 WMM Sem iconductor Corp. NPN SILICON POWER TRANSISTOR 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-66 CASE M anufacturers of W orld C lass D iscrete S em iconductors DESCRIPTION
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OCR Scan
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2N4296
2N4298
2N4299
2N4296,
2N4298,
2N4299
100mA
2N4296
vbe 10v, vce 500v NPN Transistor
2N4298
transistor 200V 100MA NPN
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