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    2N3583 Price and Stock

    Microchip Technology Inc 2N3583

    TRANS NPN 175V 1A TO66
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    Microchip Technology Inc JANTX2N3583

    TRANS NPN 175V 1A TO66
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    Microchip Technology Inc JANTX2N3583
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    Microchip Technology Inc JANTXV2N3583

    TRANS NPN 175V 1A TO66
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    Microchip Technology Inc JANTXV2N3583
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    Central Semiconductor Corp 2N3583-PBFREE

    TRANS NPN 175V 1A TO-66
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    Central Semiconductor Corp 2N3583 TIN/LEAD

    Transistor GP BJT NPN 175V 1A 2-Pin TO-66 Sleeve (Alt: 2N3583 TIN/LEAD)
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    2N3583 Datasheets (50)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N3583 Central Semiconductor Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 175V 1A TO-66 Original PDF
    2N3583 Microsemi 5 Amp, 250V, High Voltage NPN Silicon Power Transistors - Pol=NPN / Pkg=TO66 / Vceo=175 / Ic=1 / Hfe=40-200 / fT(Hz)=10M / Pwr(W)=35 Original PDF
    2N3583 Semelab Bipolar NPN Device in a Hermetically Sealed TO66 Metal Package - Pol=NPN / Pkg=TO66 / Vceo=175 / Ic=1 / Hfe=40-200 / fT(Hz)=10M / Pwr(W)=35 Original PDF
    2N3583 API Electronics Short form transistor data Short Form PDF
    2N3583 API Electronics 5 Amp NPN Transistors Scan PDF
    2N3583 API Electronics Short form transistor data Short Form PDF
    2N3583 Boca Semiconductor COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS - Pol=NPN / Pkg=TO66 / Vceo=175 / Ic=1 / Hfe=40-200 / fT(Hz)=10M / Pwr(W)=35 Scan PDF
    2N3583 Central Semiconductor BJT, NPN, Switching Transistor, IC 1A - Pol=NPN / Pkg=TO66 / Vceo=175 / Ic=1 / Hfe=40-200 / fT(Hz)=10M / Pwr(W)=35 Scan PDF
    2N3583 Diode Transistor TO-3 / Various Transistor Selection Guide Scan PDF
    2N3583 Diode Transistor Transistor Short Form Data - TO-3 Scan PDF
    2N3583 Ferranti Semiconductors Shortform Data Book 1971 Short Form PDF
    2N3583 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    2N3583 Ferranti Semiconductors Power Transistors 1977 Scan PDF
    2N3583 General Electric High-voltage silicon N-P-N transistor. - Pol=NPN / Pkg=TO66 / Vceo=175 / Ic=1 / Hfe=40-200 / fT(Hz)=10M / Pwr(W)=35 Scan PDF
    2N3583 General Transistor Power Transistor Selection Guide Scan PDF
    2N3583 Mospec POWER TRANSISTORS(35W) - Pol=NPN / Pkg=TO66 / Vceo=175 / Ic=1 / Hfe=40-200 / fT(Hz)=10M / Pwr(W)=35 Scan PDF
    2N3583 Mospec Complementary Medium-Power High Voltage Power Transistor Scan PDF
    2N3583 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N3583 Motorola The European Selection Data Book 1976 Scan PDF
    2N3583 Motorola European Master Selection Guide 1986 Scan PDF

    2N3583 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3583

    Abstract: No abstract text available
    Text: 2N3583 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


    Original
    PDF 2N3583 O213AA) 1-Aug-02 2N3583

    Untitled

    Abstract: No abstract text available
    Text: 2N3583 Complementary medium-power high voltage power transistor 6.1. 1 of 1 Home Part Number: 2N3583 Online Store 2N3583 Diodes C o m plem entary m edium - po w er high v o ltage po w er t rans is to r


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    PDF 2N3583 com/2n3583 2N3583

    Untitled

    Abstract: No abstract text available
    Text: 2N3583 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


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    PDF 2N3583 O213AA) 30-Jul-02

    200V transistor npn 10a

    Abstract: transistor 200V 100MA NPN 2N3584 2N3583 200v 10a npn transistor 200V 100MA NPN
    Text: 2N3583 2N3584 2N3585 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3583 Series types are NPN Silicon Transistors designed for high speed switching and high voltage amplifier applications. MARKING: FULL PART NUMBER


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    PDF 2N3583 2N3584 2N3585 500mA 200mA, 100mA, 200V transistor npn 10a transistor 200V 100MA NPN 200v 10a npn transistor 200V 100MA NPN

    2N3738 equivalent

    Abstract: 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049 2N6420
    Text: Power Transistors TO-66 Case TYPE NO. NPN 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 PNP 2N6049 2N6420 2N6421 2N6422 2N3740 2N3740A 2N3741 2N3741A 2N3766 2N3767 2N4231 2N4231A 2N4232 2N4232A 2N4233 2N4233A 2N4240 2N4296 2N4298 2N4299 2N4910 2N4911 2N4912


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    PDF 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049 2N6420 2N6421 2N3738 equivalent 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049 2N6420

    2n3583

    Abstract: 2N3585
    Text: 2N3583 2N3584 2N3585 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3583 series devices are silicon NPN transistors designed for high speed switching and high voltage amplifier applications. MARKING: FULL PART NUMBER


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    PDF 2N3583 2N3584 2N3585 2N3583 CONDITI200Î 100mA 2N3585

    2N5428

    Abstract: No abstract text available
    Text: Power Transistors TO-66 Case TYPE NO. NPN 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 PNP 2N6049 2N6420 2N6421 2N6422 2N3740 2N3740A 2N3741 2N3741A 2N3766 2N3767 2N4231 2N4231A 2N4232 2N4232A 2N4233 2N4233A 2N4240 2N4296 2N4298 2N4299 2N4910 2N4911 2N4912


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    PDF 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049 2N6420 2N6421 2N5428

    2N3584

    Abstract: 2N3585 2N3583 transistors 2n3585
    Text: NPN 2N35832N3584 2N3585 NPN SILICON POWER TRANSISTORS. High voltage power transistors designed for industrial and military applications. TO-66 metal case. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCBO Collector-Base Voltage IE= 0


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    PDF 2N3583 2N3584 2N3585 2N3584 2N3585 2N3583 transistors 2n3585

    2n3441

    Abstract: 2N3442 2N3439 2N3440 2N3583 2N3584 2N3585
    Text: HIGH VOLTAGE NPN HIGH VOLTAGE SELECTOR CHART TO-66 2-5A TO-3 10A 140 2N3441 2N3442 175 2N3583 TO-39 <2A Package •c V CE0 Volts 2N3440 250 2N3584 2N3585 300 2N3439 350 TABLE 5 - NPN HIGH VOLTAGE TRANSISTORS The transistors shown ¡n this table are characterised for high voltage operation in industrial, commercial


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    PDF 2N3441 2N3442 2N3583 2N3440 2N3584 2N3585 2N3439 2N3442 2N3439 2N3583 2N3584 2N3585

    mje 3001

    Abstract: MJ3583 2N3583 MOTOROLA MJ3585 MJ3701 2N3583 MJ2253 MJ3760 MJ3761 transistor SE 431
    Text: MJ3583 thru MJ3585 SILICON MJ3701 (SILICON) p o r specifications, §ee 2N3583 Data. For Specifications, See MJ2253 Data. MJ3760 (silicon) MJ3761 H O RIZO N TAL D E FL E C T IO N SILICO N TR A N SISTO R S 6.0/8.0 AM PERE T R IP L E D IFF U S E D POWER TR A N S IS TO R S


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    PDF MJ3583 MJ3585 2N3583 MJ3701 MJ2253 MJ3760 MJ3761 MJ3760 MJ3761 16-COLLECTOR-BASE mje 3001 2N3583 MOTOROLA MJ3585 MJ3701 transistor SE 431

    2N6315

    Abstract: 2n3054a
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-66 PA C K A G E D E V IC E T Y PE ^C E O sus V O LTS Ic (m ax) AM PS NPN TO-66 2N 3054A 55 4 25-100@ .5/4 2N3583 250h 1 2N 3584 300h 2N 3585 hfE@ i< y v Ce (m in/m ax @ A/V) ^CE<s»l) Pr D * W A TTS fr


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    PDF 2N3583 2N4911 2N5661 2N5665 2N6315 2N6373 2N6315 2n3054a

    2N4240

    Abstract: 2N3583 2N3584 2N3585 2N6420 2N6421 2N6422 2N6423 2N6420-2N6421
    Text: COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS NPN 2N3583 2N3584 2N3585 2N4240 . designed for high-speed switching and linear amplifier application for high-voltage operational amplifiers,switching regulators,convertors, deflection stages and high fidelity amplifiers.


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    PDF 2N3583 2N6420 2N3584 2N6421 2N3585 2N6422 2N4240 2N6423 2N6420-2N6421

    npn transistor to-66

    Abstract: 2N3584A TRANSISTOR 751 2N3054A 2N3879A 2N3584 2n3767 2N3583 2N3738 2N3878
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-66 V ceo Ic DEVICE TYPE sus VOLTS (max) AMPS NPN TO-66 2N3054A 55 4 25-100@.5/4 2N3583 250h 2N3584A T ir ^ * Tc = 25UC h V»CER VcE(j»t) @ I c^Ib (V@ A/A) l*FE@ V V ce PACKAGE (min/max @ A/V) p • D*


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    PDF 2N3054A 2N3583 2N3584A 2N3585A 2N3738 2N3739A 2N3766A 2N3767A 2N3878 2N3879A npn transistor to-66 TRANSISTOR 751 2N3584 2n3767

    2N3583

    Abstract: 2N4240 2N36 2N35
    Text: 2N3583 2N3584* 2N3585* 2N4240 *also available as i? t/V E sr JAN, JANTX, JANTXV HIGH-VOLTAGE SILICON N-P-N TRANSISTORS For High-speed Switching and Linear-Amplifier Applications Features • 100-percent tested to assure freedom from second breakdown in both forwardand reverse-bias conditions when operated within specified limits


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    PDF 2N3583 2N3584* 2N3585* 2N4240 100-percent 2N3583, 2N4240 2N36 2N35

    2N3584 TEXAS

    Abstract: TEXAS 2N3583 2n4240 37n50 2n3684
    Text: TYPES 2N3583, 2N3584, 2N3585, 2N4240 N-P-N SILICON POWER TRANSISTORS H IG H -V O LT A G E POWER TR AN SISTO RS D ESIG NED FOR IN D U S T R IA L A N D M IL IT A R Y APPLICATIO N S 20 GO H m c •< < r u ffiS B S gg • Min V B R C EO of 300 V (2N 3585, 2N 4240)


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    PDF 2N3583, 2N3584, 2N3585, 2N4240 2N4240) 2N3583 2N3584 TEXAS TEXAS 2N3583 37n50 2n3684

    2N3584

    Abstract: 2N3442 2N3583 2N3439 2N3440 2N3441 2N3585
    Text: HIGH VOLTAGE NPN HIGH V O LTA G E S E LE C T O R C H A R T TO -6 6 2-5A TO-3 10A 140 2N3441 2N3442 175 2N3583 Package 'c TO-39 <2A V CEO Volts 250 2N3440 2N3584 2N3585 300 350 2N3439 TA B LE 5 - NPN HIGH V O LTA G E T R A N S IS T O R S The transistors shown in this table are characterised for high voltage operation in industrial,


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    PDF 2N3441 2N3442 2N3583 2N3440 2N3584 2N3585 2N3439 2N3442 16ial 2N3584 2N3583 2N3439 2N3585

    200V transistor npn 10a

    Abstract: 2N3583 2N3584 2N3585 200V 100MA NPN transistor 200V 100MA NPN
    Text: HataSheet 2N3583 2N3584 2N3585 CGVIIiu1 acniiwiiiinuwKor %iirpa NPN SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-66 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3583 series types are Silicon NPN Transistors designed for high speed


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    PDF 2N3583 2N3584 2N3585 2N3583 125mA 100mA 100mA 200V transistor npn 10a 2N3584 2N3585 200V 100MA NPN transistor 200V 100MA NPN

    transistor 2n358

    Abstract: 2n4240 2N3585
    Text: 2N3583-2N3585, 2N4240 File N um ber 138 High-Voltage Silicon N-P-N Transistors For H ig h -S p ee d S w itch in g and L in e a r-A m p lifie r A p p licatio n s Features: • F reed om fro m se c o n d bre a k d o w n ■ E c o n o m y type s fo r a c /d c c irc u its


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    PDF 2N3583-2N3585, 2N4240 2N3584, 2N3585. transistor 2n358 2n4240 2N3585

    2N8261

    Abstract: No abstract text available
    Text: Power Transistors TO-66 Case TYPE NO. te A NPN PNP 2N3054 Pd (W) MAX bvcbo hFE (V) b v CEO (V) MIN MIN MIN MAX le (A) VCE(SAT) Iß (A) (V) MAX (MHz) MIN 4.0 25 90 55 25 150 0.5 1.0 0.5 0.8 2N3054A 2N6049 4.0 75 90 55 25 150 0.5 0.5 0.5 0.8 2N3583 2N6420


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    PDF 2N3054 2N3054A 2N3583 2N3584 2N3S85 2N3738 2N3739 2N3740 2N3740A 2N3741 2N8261

    2n3565 equivalent transistor

    Abstract: 2n3565 transistor 2N3565 transistor 2n358 2N3565 NPN Transistor 2N4240 2n358 TRANSISTOR TA2511 2N3565 pin 2N3583-2N3585
    Text: HARRIS SEMICOND SECTOR 2N3583-2N3585, 2N4240 SLE D • M302271 □□HD43S T43 H H A S File Number 138 High-Voltage Silicon N-P-N Transistors For High-Speed Switching and Linear-Amplifier Applications Features: ■ Freedom from second breakdown • Economy types for ac/dc circuits


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    PDF 2N3583-2N3585, 2N4240 M302271 HD43S 2N3583» 2N3584» 2N3585» 2N4240» 2N3584 2N3585. 2n3565 equivalent transistor 2n3565 transistor 2N3565 transistor 2n358 2N3565 NPN Transistor 2N4240 2n358 TRANSISTOR TA2511 2N3565 pin 2N3583-2N3585

    2N372A

    Abstract: 2N3680 2N3809 T072 2N2979DCSM 2N3734 BFX81 T052 2N3501 2N3506
    Text: SEMELAB[ MflE D • A1331B7 DDDDMBb 02 ^ ■ SMLB SEMELAB LTDT»3.7«0l HI-REL BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Number Rei Code 2N3501 2N3506 2N3507 2N3508 2N3509 2N3511 2N3571 2N3583 2N3584 2N3585 2N3634 2N3635 2N3636 2N3637 2N3665


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    PDF 2N3501 2N3506 2N3507 2N3508 l/10m 2N3509 2N3511 15min 2N3571 2N372A 2N3680 2N3809 T072 2N2979DCSM 2N3734 BFX81 T052

    Untitled

    Abstract: No abstract text available
    Text: PLESSEY SEMICOND/DISCRETE i 7220533 PLESSEY SEMICOND/DISCRETE DE~| 732D533 0G04C1S5 b | ~ 95D 04952 r-33-i/ HIGH VOLTAGE NPN HIGH VOLTAGE SELECTOR CHART TO-66 2-5A TO-3 10A 140 2N3441 2N3442 175 2N3583 Package •c TO-39 <2A V C E0 Volts 2N3440 250 2N3584


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    PDF 732D533 0G04C 2N3441 2N3442 2N3583 2N3440 2N3584 2N3585 2N3439

    rca 2N4240

    Abstract: 2n3565 equivalent transistor 2N3585 2N3565 2N4240 2N3583 equivalent RCA-2N3583 2N3584 2n3584 GE 2N3583-2N3585
    Text: DI D E | 3 û ? 5 Qfll 0 0 1 7 1 5 A b 3875081 G E SOLID STATE H ig h -V o ltag e r o w e r transistore 01E 17158 _ D 2N3583-2N3585, 2N4240 T- 3 ? - K. File Number 138 High-Voltage Silicon N-P-N Transistors For H igh-Speed Switching and Linear-Am plifier Applications


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    PDF 01715A 2N3583-2N3585, 2N4240 RCA-2N3583Â 2N3584Â 2N3585Â 2N4240Â 92CS-IÂ 75ffl 2N3583 rca 2N4240 2n3565 equivalent transistor 2N3585 2N3565 2N4240 2N3583 equivalent RCA-2N3583 2N3584 2n3584 GE 2N3583-2N3585

    2n3054

    Abstract: No abstract text available
    Text: Power Transistors TO-66 Case TYPE NO. NPN •c A PHP 2N3054 Pd bvcbo bvceo (W) (V) w MAX @ IC hFE W VCE(SAT) @ >C (V) (A i *r (MHz) MIN MIN MIN MAX 4. 0 25 90 55 25 150 0.5 1.0 0. 5 0. 8 MAX MIN 2N3054A 2N6049 4. 0 75 90 55 25 150 0. 5 0.5 0.5 0.8 2N3583


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    PDF 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N3740 2N3740A 2N3741