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    200V 3A MOSFET Search Results

    200V 3A MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SK1335L-E Renesas Electronics Corporation Nch Single Power Mosfet 200V 3A Mohm DPAK(L) Visit Renesas Electronics Corporation
    RJK2009DPM-00#T0 Renesas Electronics Corporation Nch Single Power Mosfet 200V 40A 36Mohm To-3Pfm Visit Renesas Electronics Corporation
    H5N2001LSTL-E Renesas Electronics Corporation Nch Single Power Mosfet 200V 20A 125Mohm LDPAK(S)-(1)/To-263 Visit Renesas Electronics Corporation
    HAT1065R-EL-E Renesas Electronics Corporation Pch Dual Power Mosfet -200V -0.25A 6200Mohm Sop8 Visit Renesas Electronics Corporation
    RJK2006DPJ-00#T3 Renesas Electronics Corporation Nch Single Power Mosfet 200V 40A 59Mohm LDPAK(L)/To-262 Visit Renesas Electronics Corporation

    200V 3A MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    1E14

    Abstract: 2E12 FRL9230D FRL9230H FRL9230R
    Text: FRL9230D, FRL9230R, FRL9230H 3A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 3A, -200V, RDS on = 1.30Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		FRL9230D, FRL9230R, FRL9230H -200V, O-205AF 100KRAD 300KRAD 1000KRAD 3000KRAD 1E14 2E12 FRL9230D FRL9230H FRL9230R PDF

    Rad Hard in Fairchild for MOSFET

    Abstract: 1E14 2E12 FRL9230D FRL9230H FRL9230R
    Text: FRL9230D, FRL9230R, FRL9230H 3A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Title RL9 0D, L92 R, L92 H bt A, 0V, m, d rd, anwer OSTs) utho eyrds terrpoon, minctor, ,0V, m, d rd, Features Package • 3A, -200V, RDS on) = 1.30Ω TO-205AF


    Original     		FRL9230D, FRL9230R, FRL9230H -200V, O-205AF 100KRAD 300KRAD 1000KRAD 3000KRAD Rad Hard in Fairchild for MOSFET 1E14 2E12 FRL9230D FRL9230H FRL9230R PDF

    1E14

    Abstract: 2E12 FSL9230D FSL9230D1 FSL9230D3 FSL9230R FSL9230R1 40842
    Text: FSL9230D, FSL9230R 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 3A, -200V, rDS ON = 1.50Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		FSL9230D, FSL9230R -200V, 1E14 2E12 FSL9230D FSL9230D1 FSL9230D3 FSL9230R FSL9230R1 40842 PDF

    1E14

    Abstract: 2E12 FSL9230D FSL9230D1 FSL9230D3 FSL9230R FSL9230R1
    Text: FSL9230D, FSL9230R 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 3A, -200V, rDS ON = 1.50Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		FSL9230D, FSL9230R -200V, O-205AF 254mm) FSL9230R 1E14 2E12 FSL9230D FSL9230D1 FSL9230D3 FSL9230R1 PDF

    integrated circuits equivalents list

    Abstract: Rad Hard in Fairchild for MOSFET
    Text: FSL9230D, FSL9230R 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs December 2001 Features Description • 3A, -200V, rDS ON = 1.50Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		FSL9230D, FSL9230R -200V, integrated circuits equivalents list Rad Hard in Fairchild for MOSFET PDF

    IRF9622

    Abstract: IRF9620 IRF9623 IRF9621 TB334
    Text: IRF9620, IRF9621, IRF9622, IRF9623 S E M I C O N D U C T O R -3A and -3.5A, -150V and -200V, 1.5 and 2.4 Ohm, P-Channel Power MOSFETs July 1998 Features Description • -3A and -3.5A, -150V and -200V These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		IRF9620, IRF9621, IRF9622, IRF9623 -150V -200V, -200V IRF9622 IRF9620 IRF9623 IRF9621 TB334 PDF

    irf610 mosfet

    Abstract: IRF610 power MOSFET IRF610 4V801
    Text: IRF610 Data Sheet Title F61 bt 3A, 0V, 00 m, June 1999 3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		IRF610 IRF610 O-220AB TB334 irf610 mosfet power MOSFET IRF610 4V801 PDF

    2SK2887

    Abstract: No abstract text available
    Text: Transistors Switching 200V, 3A 2SK2887 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel


    Original     		2SK2887 2SK2887 PDF

    200v mosfet

    Abstract: mosfet parallel mosfet parallel MOSFET Transistors N-Channel MOSFET 200v Transistor 168 mosfet 168 2SK2887
    Text: Transistors Switching 200V, 3A 2SK2887 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel


    Original     		2SK2887 200v mosfet mosfet parallel mosfet parallel MOSFET Transistors N-Channel MOSFET 200v Transistor 168 mosfet 168 2SK2887 PDF

    2E12

    Abstract: 2N7311D 2N7311H 2N7311R
    Text: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRL9230 D, R, H 2N7311D, 2N7311R 2N7311H Radiation Hardened P-Channel Power MOSFETs November 1994 Features Package • 3A, -200V, RDS(on) = 1.30Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts


    Original     		FRL9230 2N7311D, 2N7311R 2N7311H -200V, O-205AF 100KRAD 300KRAD 1000KRAD 3000KRAD 2E12 2N7311D 2N7311H 2N7311R PDF

    40841

    Abstract: 40841 MOSFET fsl9230 MIL-S-19500 1E14 2E12 FSL9230D FSL9230R Rad hard MOSFETS in Harris
    Text: S E M I C O N D U C T O R FSL9230D, FSL9230R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs June 1997 Features Package • 3A, -200V, rDS ON = 1.50Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects


    Original     		FSL9230D, FSL9230R -200V, 36MeV/mg/cm2 O-205AF 1-800-4-HARRIS 40841 40841 MOSFET fsl9230 MIL-S-19500 1E14 2E12 FSL9230D FSL9230R Rad hard MOSFETS in Harris PDF

    k1445

    Abstract: ITR01407 K144 2SK1445LS ITR01406 ITR01408 ITR01409 ITR01410 TA-3431
    Text: Ordering number : ENN3448B 2SK1445LS N-Channel Silicon MOSFET 2SK1445LS Ultrahigh-Speed Switching Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. Micaless package facilitating mounting. unit : mm 2078C [2SK1445LS]


    Original     		ENN3448B 2SK1445LS 2078C 2SK1445LS] O-220FI k1445 ITR01407 K144 2SK1445LS ITR01406 ITR01408 ITR01409 ITR01410 TA-3431 PDF

    Untitled

    Abstract: No abstract text available
    Text: FSL9230D, FSL9230R 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 3A, -200V, ros ON = 1 -50ii The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		FSL9230D, FSL9230R -200V, O-205AF 254mm) PDF

    Untitled

    Abstract: No abstract text available
    Text: y*Rg*s FRL9230D, FRL9230R, FRL9230H 3A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 3A, -200V, RDS on = 1.30£i TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)


    OCR Scan     		FRL9230D, FRL9230R, FRL9230H -200V, O-205AF 100KRAD 300KRAD 1000KRAD 3000KRAD PDF

    Untitled

    Abstract: No abstract text available
    Text: h a r r IRF9620, IRF9621, IRF9622, IRF9623 i s s e m i c o n d u c t o r -3A and -3.5A, -150V and -200V, 1.5 and 2.4 Ohm, P-Channel Power MOSFETs July 1998 Features Description • -3A and -3.5A, -150V and -200V • High Input Impedance These are P-Channel enhancement mode silicon gate


    OCR Scan     		IRF9620, IRF9621, IRF9622, IRF9623 -150V -200V, -200V PDF

    Untitled

    Abstract: No abstract text available
    Text: ì li h a r r is U U S E M I C O N D U C T O R FRL9230D, FRL9230R, FRL9230H 3A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 3 A, -200V, RDS on = 1.30i! TO-2Q5AF • Second Generation Rad Hard MOSFET Results From New Design Concepts


    OCR Scan     		FRL9230D, FRL9230R, FRL9230H -200V, 100KRAD 300KRAD 1000KRAD 3000KRAD 732UIS PDF

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SENICOND SECTOR m HARRIS SEMICONDUCTOR REGISTRATION PENDING Currently Available as FRL9230 D, R, H SflE D • 4305271 0045787 540 H H A S 2N7311D, 2N7311H 2N7311H Radiation Hardened P-Channel Power MOSFETs December 1992 l ° l Package Features • 3A, -200V, RDS(on) > 1.30Q


    OCR Scan     		FRL9230 2N7311D, 2N7311H -200V, O-205AF 100KRAD 300KRAD 1000KRAD 3000KRAD PDF

    F9622

    Abstract: IRF9622 NP-Q40 F962
    Text: HARRIS IR F9620, IRF9621 IR F9622, IRF9623 Avalanche Energy Rated P-Channel Power MOSFETs August 1991 F e a tu re s Package T 0 -2 2 0 A B • -3A and -3.5A , -1 5 0 V and -200V • r D S O N TOP VIEW = 1 -5 0 and 2 .4 Cl • Single Pulse Avalanche Energy Rated


    OCR Scan     		F9620, IRF9621 F9622, IRF9623 -200V IRF9620, IRF9621, IRF9622 IRF9623 RF9620, F9622 NP-Q40 F962 PDF

    251C

    Abstract: 2SK2715 2SK2887
    Text: Transistors Small switching 200V, 3A 2SK2887 •E x te rn a l dim ensions (Units: mm) •F e a tu re s 1 ) Low on-res¡stance. 2) High-speed switching. 6) Easy to use in parallel. 0.5±0.1 V CO-»i? at V gss = ± 3 0 V . Easily designed drive circuits. - 0.1


    OCR Scan     		2SK2887 SC-63 251C 2SK2715 2SK2887 PDF

    Untitled

    Abstract: No abstract text available
    Text: ill H a r r is U U S E M I C O N D U C T O R 2N7311D, 2N7311R 2N731 1H REGISTRATION PENDING Currently Available as FRL9230 D, R, H . • Radiation Hardened P-Channel Power MOSFETs Decem ber 1992 Package Features • 3A, -200V, RDS(on) > 1.300 TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts


    OCR Scan     		2N7311D, 2N7311R 2N731 FRL9230 O-205AF -200V, 100KRAD 1000KRAD 3000KRAD PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors Small switching 200V, 3A 2SK2887 •E x te rn a l dim ensions (Units: mm) •F e a tu re s 1) Low on-resistance. 2) High-speed switching. 6 .5 ± 0.2 4) 2.3 2 ,+ o .a 3) W ide SOA (safe operating area). Gate-source voltage guaranteed at V gss= ± 3 0 V .


    OCR Scan     		2SK2887 SC-63 PDF

    40841

    Abstract: 40841 MOSFET
    Text: m U J H a r r is S E M I C O N D U C T O R FSL9230D, FSL9230R w ' — v ^ W ^ Radiation Hardened, SEGR Resistant P-ChannelPowerMOSFETs June 1997 Features Package • 3A,-200V, rDS oN = 1-500 Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) Single Event


    OCR Scan     		FSL9230D, FSL9230R O-205AF -200V, 36MeV/mg/cm2 1-800-4-HARRIS 40841 40841 MOSFET PDF

    Untitled

    Abstract: No abstract text available
    Text: h a r r i s F S L 9 2 3 S E M I C O N D U C T O R D , 7 F S L 9 2 3 R Radiation Hardened, SEGR Résistant P-Channel Power MOSFETs Ju n e 1 9 9 7 Features Package • 3A, -200V, rDS ON = 1.50S1 TO-205AF • Total Dose Meets Pre-RAD Specifications to 100K RAD (Si)


    OCR Scan     		-200V, O-205AF 1-800-4-HARRIS PDF

    p-channel 250V 30A power mosfet

    Abstract: p-channel 250V 16A power mosfet Power MOSFET P-Channel 250V 50A mosfets Power MOSFETs 19A, 200V, P-Channel Power MOSFET N_CHANNEL MOSFET 100V MOSFET MOSFET 200v 20A n.channel mosfet 40a 200v FRK260
    Text: RAD HARD MOSFETsl RAD HARD TRANSISTORS PAGE Rad Hard Power MOSFET Selection G u id e . 4-3 Rad Hard Data Packages - Harris Power T ra n s is to rs .


    OCR Scan     		-200V, p-channel 250V 30A power mosfet p-channel 250V 16A power mosfet Power MOSFET P-Channel 250V 50A mosfets Power MOSFETs 19A, 200V, P-Channel Power MOSFET N_CHANNEL MOSFET 100V MOSFET MOSFET 200v 20A n.channel mosfet 40a 200v FRK260 PDF