1E14
Abstract: 2E12 FSL9230D FSL9230D1 FSL9230D3 FSL9230R FSL9230R1
Text: FSL9230D, FSL9230R 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 3A, -200V, rDS ON = 1.50Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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Original
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FSL9230D,
FSL9230R
-200V,
O-205AF
254mm)
FSL9230R
1E14
2E12
FSL9230D
FSL9230D1
FSL9230D3
FSL9230R1
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PDF
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integrated circuits equivalents list
Abstract: Rad Hard in Fairchild for MOSFET
Text: FSL9230D, FSL9230R 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs December 2001 Features Description • 3A, -200V, rDS ON = 1.50Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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Original
|
FSL9230D,
FSL9230R
-200V,
integrated circuits equivalents list
Rad Hard in Fairchild for MOSFET
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PDF
|
1E14
Abstract: 2E12 FSL9230D FSL9230D1 FSL9230D3 FSL9230R FSL9230R1 40842
Text: FSL9230D, FSL9230R 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 3A, -200V, rDS ON = 1.50Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
|
Original
|
FSL9230D,
FSL9230R
-200V,
1E14
2E12
FSL9230D
FSL9230D1
FSL9230D3
FSL9230R
FSL9230R1
40842
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PDF
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40842
Abstract: No abstract text available
Text: ffj h a fr fr is U FSL9230D, S E M I C O N D U C T O R 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 3A, -200V, ros QN = 1.50Q The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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OCR Scan
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FSL9230D,
-200V,
MIL-STD-750,
MIL-S-19500,
-160V,
100ms;
500ms;
40842
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PDF
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Untitled
Abstract: No abstract text available
Text: FSL9230D, FSL9230R 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 3A, -200V, ros ON = 1 -50ii The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
|
OCR Scan
|
FSL9230D,
FSL9230R
-200V,
O-205AF
254mm)
|
PDF
|
