3052p
Abstract: 3122P 3242p si-3242p 3152P SI-3122P SI-3052P SI-3152P SI3242P 2a86
Text: ●SI-3000P Series SI-3000P Series 3-Terminal, Dropper Type •Features • • • • TO-3P package 3-terminal regulator Output current: 2.0A Wide range of DC input voltage Built-in foldback overcurrent protection circuit ■Applications • For stabilization of the secondary stage of switching power supplies
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qSI-3000P
SI-3000P
SI-3242P)
SI-3122P)
3052p
3122P
3242p
si-3242p
3152P
SI-3122P
SI-3052P
SI-3152P
SI3242P
2a86
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ULM850-L2-PL-S0101U
Abstract: ULM850-PM-TN-S46FZP ULM850-VP-PL-S46XOP 894nm ULM850-PM-TN-S46XZP SM 850nm laser vcsel ulm tdlas vcsel SMD MAP 3959 ulm vcsel reference
Text: Single Mode VCSEL 850nm,TO46,0.5mW Ideal circular gaussian beam Built-in ESD protection structure High reliability, 10 years @ 85°C INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE CLASS 3B LASER PRODUCT ELECTRO-OPTICAL CHARACTERISTICS T=20°C unless otherw ise stated
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850nm
850nm-long-life-sm-vcsel
ULM850-L2-PL-S0101U
ULM850-PM-TN-S46FZP
ULM850-VP-PL-S46XOP
894nm
ULM850-PM-TN-S46XZP
SM 850nm laser vcsel ulm
tdlas
vcsel SMD
MAP 3959
ulm vcsel reference
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KTB688B
Abstract: KTD718
Text: SEMICONDUCTOR KTB688B TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A N O FEATURES B Q K F Recommended for 45 50W Audio Frequency Amplifier Output Stage. R G H I C J Complementary to KTD718B. D E L MAXIMUM RATING Ta=25
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KTB688B
KTD718B.
KTB688B
KTD718
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KTD998
Abstract: transistor ktD998 KTD998 transistor KTB778 KTb778 datasheet
Text: SEMICONDUCTOR KTD998 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES A C R ・Recommended for 45～50W Audio Frequency W F U E Amplifier Output Stage. W V M I K N D J L S T B G ・Complementary to KTB778. MAXIMUM RATING Ta=25℃
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KTD998
KTB778.
200x200x2mm
100x100x2mm
300x300x2mm
KTD998
transistor ktD998
KTD998 transistor
KTB778
KTb778 datasheet
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EN2683B
Abstract: en2683 C5 100uf 25v LA4282 IC DIAGRAM LA4282
Text: Ordering number : EN2683B Monolithic Linear IC LA4282 For Use In Home Stereo, TV Applications 2-Channel 10W AF Power Amplifier Overview The LA4282 is an IC which seals a high-output power amplifier for TVs and monitors in a compact package. Features • High-power 2-channel AF power amplifier
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EN2683B
LA4282
LA4282
EN2683B
en2683
C5 100uf 25v
LA4282 IC DIAGRAM
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uln2503
Abstract: irf250 datasheet METAL-CLAD Wire wound resistors 1000v 200w Transistor ULN400 rara irn W203 ULN200 transistor irf250 IRF 024
Text: Resistors And Resistive Applications IRN, ULN, IRF, ULF SLIM PROFILE WIRE WOUND, METAL CLAD RESISTORS The IRN N=narrow and flat & IRF(F=flat) models are metal-clad, wire-wound, high-power, extremely low inductance resistors designed for industrial and other applications where space is at a premium and performance is a must. The ULN and
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Mo500/ULF500
IRF200
IRF250
IRF300
IRF400
IRF500
1-10ohm
uln2503
irf250 datasheet
METAL-CLAD Wire wound resistors
1000v 200w Transistor
ULN400
rara irn
W203
ULN200
transistor irf250
IRF 024
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IRS30
Abstract: AC1500V IRS50
Text: Resistors And Resistive Applications IRS METAL CLAD ECONOMY RESISTOR The IRS30, IRS50 are slim and flat economical resistors. These models are ideal for applications where space and funds are at a premium. The most common applications for these models are motor
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IRS30,
IRS50
05ohms]
-55-200C
20Mohm
AC1500V,
-260ppm/C
30min.
IRS30
AC1500V
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3050J
Abstract: No abstract text available
Text: 1-1-1 Linear Regulator IC SI-3000J Series 5-Terminal, Full-Mold, Low Dropout Voltage Linear Regulator IC •Features ■Absolute Maximum Ratings • Compact full-mold package equivalent to TO220 Parameter • Output current: 2.0A • Low dropout voltage: VDIF ≤ 1V (at IO=2.0A)
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SI-3000J
SI-3050J
SI-3090J
SI-3120J/3150J
3050J
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12v diode 10A
Abstract: No abstract text available
Text: 1-1-1 Linear Regulator IC SI-3001N Series 3-Terminal, Full-Mold, Low Dropout Voltage Linear Regulator IC •Features ■Absolute Maximum Ratings • Compact full-mold package equivalent to TO220 Parameter • Output current: 1.5A Symbol SI-3241N 35 45 Unit
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SI-3001N
SI-3051N/3091N
SI-3121N/3151N
12v diode 10A
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SI-3122N
Abstract: No abstract text available
Text: 1-1-1 Linear Regulator IC SI-3002N Series 3-Terminal, Full-Mold, Low Dropout Voltage Linear Regulator IC •Features ■Absolute Maximum Ratings • Compact full-mold package equivalent to TO220 Parameter • Output current: 2.0A Symbol SI-3122N/3152N 30
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SI-3002N
SI-3052N
SI-3092N
SI-3122N
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DBA100
Abstract: DBA100C DBA100G
Text: Ordering number:EN651D DBA100 Diffused Junction Silicon Diode 10.0A Single-Phase Bridge Rectifier Features Package Dimensions • Plastic molded structure. · Glass passivation for high reliability. · Peak reverse voltage:VRM=200, 600V. · Average rectified current:IO=10.0A.
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EN651D
DBA100
DBA100]
DBA100C
DBA100G
DBA100
DBA100C
DBA100G
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Untitled
Abstract: No abstract text available
Text: DIODE 10A/100V to 600V PB10S1,2,4,6 OUTLINE DRAWING FEATURES * Isolated Base * 4 Diodes Single Phase Bridge Connected * High Surge Capability TYPICAL APPLICATIONS * Rectified For General Use Maximum Ratings Voltage Rating Repetitive Peak Reverse Voltage Non repetitive Peak Reverse Voltage
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0A/100V
PB10S1
PB10S1
PB10S2
PB10S4
PB10S6
200x200x1
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Untitled
Abstract: No abstract text available
Text: DIODE Type：PB10S1,2,4,6 •OUTLINE DRAWING 構造 ：単相ブリッジ型シリコン整流器 Construction: Single Phase Bridge Rectifier 用途 ：一般整流用 Application: For General Use ■最大定格 / Maximum Ratings Rating Approx Net weight:8.5g
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TypePB10S1
PB10S1
PB10S2
PB10S4
PB10S6
200x200x1
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S216S02 Application note
Abstract: No abstract text available
Text: S116S02 Series S216S02 Series IT rms ≤16A, Zero Cross type SIP 4pin Triac output SSR S116S02 Series S216S02 Series ∗ Non-zero cross type is also available. (S116S01 Series/ S216S01 Series) • Description ■ Agency approvals/Compliance S116S02 Series and S216S02 Series Solid State
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S116S02
S216S02
S116S01
S216S01
UL508
S216S02 Application note
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transistor ktd718
Abstract: KTB688 KTD718
Text: SEMICONDUCTOR KTB688 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q K I F FEATURES B E ᴌComplementary to KTD718. C ᴌRecommended for 45ᴕ50W Audio Frequency G J H Amplifier Output Stage. L D MAXIMUM RATING Ta=25ᴱ
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KTB688
KTD718.
100x100x2mm
transistor ktd718
KTB688
KTD718
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ktd718
Abstract: ktd718 datasheet transistor ktd718 KTB688
Text: SEMICONDUCTOR KTD718 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q K I F FEATURES B E ᴌRecommended for 45ᴕ50W Audio Frequency C Amplifier Output Stage. G J H ᴌComplementary to KTB688. L D MAXIMUM RATING Ta=25ᴱ
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KTD718
KTB688.
100mS
300x300x2mm
200x200x2mm
100x100x2mm
ktd718
ktd718 datasheet
transistor ktd718
KTB688
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al205
Abstract: KTA1036 KTC2016
Text: SEMICONDUCTOR KTC2016 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A R S FEATURES E ᴌLow Saturation Voltage F : VCE sat =1.0V(Max.) (IC=2A, IB=0.2A). P Q D B ᴌComplementary to KTA1036. MAXIMUM RATINGS (Ta=25ᴱ) SYMBOL RATING
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KTC2016
KTA1036.
al205
KTA1036
KTC2016
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SI-3522V
Abstract: 3522V SI-3132V 3052v 3122v SI3522V 3922V 3132V SI-3922V SI-3102V
Text: ●SI-3000V Series SI-3000V Series 3-Terminal, Low Dropout Voltage Dropper Type •Features • TO-3P package 3-terminal regulator • Output current: 2.0A • Low dropout voltage: VDIF≤1V at IO=2.0A • Built-in foldback overcurrent protection circuit
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qSI-3000V
SI-3000V
SI-3052V
SI-3122V/3152V
SI-3052V)
SI-3122V)
SI-3522V
3522V
SI-3132V
3052v
3122v
SI3522V
3922V
3132V
SI-3922V
SI-3102V
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3052n
Abstract: G746 SI-3002N SI-3052N SI-3092N SI-3122N SI-3152N 3122N
Text: ●SI-3002N Series SI-3002N Series 3-Terminal, Full-Mold, Low Dropout Voltage Dropper Type •Features • Compact full-mold package equivalent to TO220 • Output current: 2.0A • Low dropout voltage: VDIF≤1V (at IO=2.0A) • Built-in foldback overcurrent, overvoltage, thermal protection circuits
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qSI-3002N
SI-3002N
SI-3052N
TemperI-3052N)
SI-3052N)
3052n
G746
SI-3052N
SI-3092N
SI-3122N
SI-3152N
3122N
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3051N
Abstract: SI-3051N SI-3241N SI-3001N SI-3091N SI-3121N 3121N 3241n A 3051N
Text: ●SI-3001N Series SI-3001N Series 3-Terminal, Full-Mold, Low Dropout Voltage Dropper Type •Features • • • • Compact full-mold package equivalent to TO220 Output current: 1.5A Low dropout voltage: VDIF≤1V (at IO=1.5A) Built-in foldback overcurrent, overvoltage, thermal protection circuits
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GSI-3001N
SI-3001N
SI-3051N/3091N
SI-3121N/3151N
SI-3241N
SI-3051N)
3051N
SI-3051N
SI-3241N
SI-3091N
SI-3121N
3121N
3241n
A 3051N
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HS-EMC200
Abstract: HS-EMC500 EMC200HN HS-EMC100 emc400 E255159 400W-500W HS-EMC120
Text: ALUMINIUM HOUSED METAL CLAD BRAKING RESISTORS T y p e : EMCH 100 \ \ 80 1 70 2 60 5 50 NX "ninn © \ T yp e : EMCV V S<5s\ NN 10 0 200 275 300 A m b ie n t te m p e ra tu re °C On Heat Sink 60W~500W HEATSINK SIZE 60W-120W : 200X200X3mm Free Air 60W~150W
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0W-120W
200X200X3mm
50W-300W
300X300X3mm
00W-500W
450X450X3mm
50W-1000W
600X600X3mm
AC1500V,
HS-EMC200VN
HS-EMC200
HS-EMC500
EMC200HN
HS-EMC100
emc400
E255159
400W-500W
HS-EMC120
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BBC OS 0,9 4A
Abstract: 07380 bbc os 0.9 4A
Text: lb T O S H I B A -CDISC R E T E / O P T O } 909725 0 TO SHI BA T D i 7E S O Q Ü Q 1371 fc, | bbC <DISCRETE/OPTO 0 7 379 2SB993 SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS) INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS.
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2SB993
2SD1363
200X200X2mmA£
150Xl50X2mm
100X100X2mm
70x70x2mma£
35X35XlmmA^
25X25XlmmA^
BBC OS 0,9 4A
07380
bbc os 0.9 4A
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2SC512
Abstract: 2SC510 2sc5126 2sc5 2SA510 2SC55 2SA512 AI 01234 2SA1943-O 2SC5 2sc510 toshiba
Text: 5 /U 3 > N P N = « ffi*0 B h 5 > 5 > *5 > PCT75ÍC SILICON NPN TRIPLE DIFFUSED TRANSISTOR (PCT PROCESS) o 'y + y ? m a O o H i g h F r e q u e n c y P ow e r A m p l i f i e r A p p l i c a t i o n s , o H igh V o l t a g e S w i t c h i n g and R e g u l a t o r A p p l i c a t i o n s .
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PCT75Ã
2SC510
2SC512
800mW
2SA510,
2SA512
2SA510
2SA512
2SC512
2sc5126
2sc5
2SC55
AI 01234
2SA1943-O 2SC5
2sc510 toshiba
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X55205
Abstract: pbp 205
Text: BULK PACKAGING DEVICE TYPE PACKAGING SIZE MM BOX Q U A N TIT Y (EA> CARTON APPROX GROSS WEIGHT (KG) BOX CARTON BOX CARTON DO-41 L 196 x 84 x 20 4 5 0 x 2 1 0 x 250 1000 50K 0.38 20 DO-41 DO 15 196 x 84 x 20 450 x 210 x 250 1000 50K 0.38 20 DO-201 AD 305 x 93 x 59
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DO-41
DO-201
Ta220
238x235x50
200x200x55
500x250x290
450x210x310
X55205
pbp 205
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