4mx32
Abstract: ba1s EM6A9320BI-4 EM6A9320BI-5 etron 4mx32 Etron Technology EM6A9320
Text: EtronTech EM6A9320 4M x 32 DDR SDRAM Etron Confidential Preliminary Rev 0.3 7/2002 Features Overview • Fast clock rate: 350/333/300/285/250/200 MHz • Differential Clock CK & CK# input The EM6A9320 DDR SDRAM is a high-speed CMOS double data rate synchronous DRAM containing 128
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EM6A9320
EM6A9320
32-bit
4Mx32
ba1s
EM6A9320BI-4
EM6A9320BI-5
etron 4mx32
Etron Technology
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EM6AA320BI-5
Abstract: Etron ba1s EM6AA320BI-4 BA1 K11
Text: EtronTech EM6AA320 8M x 32 DDR SDRAM Etron Confidential Preliminary Rev 0.0 7/2002 Features Overview • Fast clock rate: 300/285/250/200 MHz • Differential Clock CK & CK# input The EM6AA320 DDR SDRAM is a high-speed CMOS double data rate synchronous DRAM containing 256
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EM6AA320
EM6AA320
8Mx32
EM6AA320BI-5
Etron
ba1s
EM6AA320BI-4
BA1 K11
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ba1s
Abstract: EM6A9320BI-4MG EM6A9320 EM6A9320BI em6a9320bi-4
Text: EtronTech EM6A9320BI Revision History Revision 0.9D Nov., 2006 Change speed to 250MHz Revise DC and AC characteristics Revision 0.9C(Mar., 2006) Deleted confidential wording Revision 0.9B(Mar., 2006) Revise the DC and AC characteristics Etron Technology, Inc.
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EM6A9320BI
250MHz
4Mx32
Nov/2006)
EM6A9320
high11
200uS
200xCK
ba1s
EM6A9320BI-4MG
EM6A9320BI
em6a9320bi-4
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ba1s
Abstract: 8Mx32 EM6AA320BI-5MSG EM6AA320BI-5MS
Text: EtronTech EM6AA320 8M x 32 DDR SDRAM Preliminary Rev 0.4 June/2007 Features Overview • Fast clock rate: 200 MHz • Differential Clock CK & CK# input The EM6AA320 DDR SDRAM is a high-speed CMOS double data rate synchronous DRAM containing 256 Mbits. It is internally configured as a quad 2M x 32
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EM6AA320
June/2007)
EM6AA320
200uS
200xCK
8Mx32
ba1s
EM6AA320BI-5MSG
EM6AA320BI-5MS
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EM6A9320BI-5MG
Abstract: EM6A9320BI-4MG ba1s EM6A9320BI4MG 4mx32 sdram 1m x 4x 32 EM6A9320BI EM6A9320
Text: EtronTech EM6A9320BI Revision History Revision 0.9C Mar., 2006 Deleted confidential wording Revision 0.9B(Mar., 2006) Revise the DC and AC characteristics Etron Technology, Inc. No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C.
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EM6A9320BI
4Mx32
May/2006)
EM6A9320
EM6A9320BI-5MG
EM6A9320BI-4MG
ba1s
EM6A9320BI4MG
sdram 1m x 4x 32
EM6A9320BI
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EM6A9320
Abstract: EM6A9320BI-4 EM6A9320BI-5 BA1l4
Text: EtronTech EM6A9320 4M x 32 DDR SDRAM Preliminary Rev 0.6 5/2006 Features Overview • Fast clock rate: 350/333/300/285/250/200 MHz • Differential Clock CK & CK# input The EM6A9320 DDR SDRAM is a high-speed CMOS double data rate synchronous DRAM containing 128
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EM6A9320
EM6A9320
32-bit
4Mx32
EM6A9320BI-4
EM6A9320BI-5
BA1l4
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EM6A9320BI-5MG
Abstract: ba1s EM6A9320 EM6A9320BI em6a9320bi-5
Text: EtronTech EM6A9320BI Revision History Revision 1.0 Mar., 2007 Delete ‘Preliminary’ Revise the AC characteristics Revision 0.9E(Sep., 2006) Revise the AC characteristics Revise CAS Latency Revision 0.9D(Jul., 2006) Revise the AC characteristics Revision 0.9C(Jul., 2006)
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EM6A9320BI
4Mx32
200uS
200xCK
EM6A9320BI-5MG
ba1s
EM6A9320
EM6A9320BI
em6a9320bi-5
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EM6AA320BI-5MS
Abstract: 8MX32
Text: EtronTech EM6AA320-XXMS 8M x 32 DDR SDRAM Rev 0.7 May/2006 Features Overview • Fast clock rate: 300/275/250/200/166 MHz • Differential Clock CK & CK# input The EM6AA320 DDR SDRAM is a high-speed CMOS double data rate synchronous DRAM containing 256 Mbits. It is internally configured as a quad 2M x 32
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EM6AA320-XXMS
May/2006)
EM6AA320
8Mx32
EM6AA320BI-5MS
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