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    BA1S Price and Stock

    LEMO connectors GBA.1S.250.FN

    CONN LOCKWASHER FOR S SERIES
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    DigiKey GBA.1S.250.FN Bag 230 1
    • 1 $1.15
    • 10 $0.936
    • 100 $0.7632
    • 1000 $0.62221
    • 10000 $0.5737
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    Mouser Electronics GBA.1S.250.FN 6,912
    • 1 $1.15
    • 10 $0.811
    • 100 $0.703
    • 1000 $0.703
    • 10000 $0.561
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    PEI Genesis GBA.1S.250.FN 146 1
    • 1 $0.29
    • 10 $0.29
    • 100 $0.29
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    Sager GBA.1S.250.FN 13 1
    • 1 $0.81
    • 10 $0.66
    • 100 $0.52
    • 1000 $0.46
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    Telemechanique Sensors 9007BA1S

    LIMIT SWITCH LEVER, 9007, SNAP A
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    DigiKey 9007BA1S Box 1 1
    • 1 $46.06
    • 10 $34.542
    • 100 $27.8255
    • 1000 $26.866
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    Mouser Electronics 9007BA1S
    • 1 $44.07
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    • 100 $27.82
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    Newark 9007BA1S Bulk 1
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    RS 9007BA1S Bulk 6 Weeks 1
    • 1 $44.51
    • 10 $37.83
    • 100 $34.27
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    TME 9007BA1S 1
    • 1 $49.95
    • 10 $43.29
    • 100 $43.29
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    IDEC Corporation CW1B-A1S

    CONFIG SWITCH BODY PB
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    DigiKey CW1B-A1S Bulk 1
    • 1 $15.34
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    Mouser Electronics CW1B-A1S
    • 1 $12.94
    • 10 $12.76
    • 100 $11.85
    • 1000 $11.41
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    Newark CW1B-A1S Bulk 1
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    RS CW1B-A1S Bulk 1
    • 1 $10.27
    • 10 $8.73
    • 100 $7.91
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    Master Electronics CW1B-A1S
    • 1 -
    • 10 $9.55
    • 100 $8.03
    • 1000 $7.28
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    Sager CW1B-A1S 1
    • 1 $10.06
    • 10 $10.06
    • 100 $8.62
    • 1000 $8.38
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    IDEC Corporation CW4B-A1S

    CONFIG SW BODY PUSHBUT NON-ILLUM
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    DigiKey CW4B-A1S Bulk 1
    • 1 $18.48
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    Mouser Electronics CW4B-A1S
    • 1 $14.78
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    • 100 $13.93
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    Newark CW4B-A1S Bulk 1
    • 1 $16.1
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    • 100 $13.38
    • 1000 $11.61
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    RS CW4B-A1S Bulk 1
    • 1 $12.59
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    Master Electronics CW4B-A1S
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    Sager CW4B-A1S 1
    • 1 $12.34
    • 10 $12.34
    • 100 $10.57
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    IDEC Corporation HW1B-A1-S

    CONFIG SW BODY PUSHBUT NON-ILLUM
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    DigiKey HW1B-A1-S Bulk 1
    • 1 $11.07
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    Mouser Electronics HW1B-A1-S
    • 1 $8.57
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    • 100 $7.71
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    Newark HW1B-A1-S Bulk 1
    • 1 $10.21
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    • 100 $8.35
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    RS HW1B-A1-S Bulk 1
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    Master Electronics HW1B-A1-S
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    • 100 $5.79
    • 1000 $5.17
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    Sager HW1B-A1-S 1
    • 1 $7.05
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    • 100 $6.22
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    Find more BA1S price and stock on Findchips.com

    BA1S Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    ba1s

    Abstract: No abstract text available
    Text: IS43LR32400E Advanced Information 1M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43LR32400E is 134,217,728 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The address lines are multiplexed with the Data


    Original     		IS43LR32400E 32Bits IS43LR32400E Figure38 90Ball -25oC 4Mx32 IS43LR32400E-6BLE ba1s PDF

    IS43LR16640A

    Abstract: IS43LR16640A-5BLI IS43LR16640A-6BLI IS46LR16640A-5BLA1 IS43LR16640A-6BL
    Text: IS43/46LR16640A Advanced Information 16M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16640A is 1,073,741,824 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 16,777,216 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


    Original     		IS43/46LR16640A 16Bits IS43/46LR16640A 16-bit -40oC 64Mx16 IS43LR16640A-5BLI IS43LR16640A-6BLI 60-ball IS43LR16640A IS46LR16640A-5BLA1 IS43LR16640A-6BL PDF

    46LR32640A

    Abstract: Mobile DDR SDRAM
    Text: IS43/46LR32640A 16M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32640A is 2,147,483,648 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 33,554,432 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


    Original     		IS43/46LR32640A 32Bits IS43/46LR32640A 32-bit IS43LR32640A-6BLI 90-ball -40oC 64Mx32 IS46LR32640A-5BLA1 46LR32640A Mobile DDR SDRAM PDF

    46LR16640A

    Abstract: Mobile DDR SDRAM
    Text: IS43/46LR16640A Advanced Information 16M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16640A is 1,073,741,824 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 16,777,216 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


    Original     		IS43/46LR16640A 16Bits IS43/46LR16640A 16-bit IS43LR16640A-5BL IS43LR16640A-6BL 60-ball -40oC 64Mx16 46LR16640A Mobile DDR SDRAM PDF

    46LR32640A

    Abstract: Mobile DDR SDRAM IS43LR32640A-5BLI IS46LR32640A-5BLA1 64Mx32 Mobile DDR SDRAM IS43LR32640A
    Text: IS43/46LR32640A Advanced Information 16M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32640A is 2,147,483,648 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 33,554,432 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


    Original     		IS43/46LR32640A 32Bits IS43/46LR32640A 32-bit IS43LR32640A-5BL IS43LR32640A-6BL 90-ball -40oC 64Mx32 46LR32640A Mobile DDR SDRAM IS43LR32640A-5BLI IS46LR32640A-5BLA1 64Mx32 Mobile DDR SDRAM IS43LR32640A PDF

    Untitled

    Abstract: No abstract text available
    Text: IS43/46LR32200B 512K x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32200B is 67,108,864 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 524,288 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted on a


    Original     		IS43/46LR32200B 32Bits IS43/46LR32200B 32-bit IS43LR32200B-6BLI 90-ball -40oC 2Mx32 PDF

    Telemecanique LIMIT SWITCH XCK-J

    Abstract: Telemecanique LIMIT SWITCH NFC 63-140 Telemecanique LIMIT SWITCH nfc 63-145 y2 XCK-J EN 60947-5-1 XCM NFC 63-145 y2 Telemecanique LIMIT SWITCH XCK-J 59 Telemecanique LIMIT SWITCH XCK-p Telemecanique LIMIT SWITCH XCK-J IEC 337-1 NFC 63 telemecanique xck-p IEC 60947-5-1 xck-j
    Text: Farnell Codes 423 2884-2902 425 3711-3723 Table of Contents 425 3772-3784 Section 19 425 3814-4557 Limit Switches 425 4569-4594 Current Ratings and Application Data 9007C 19-2 Heavy Duty Industrial Limit Switches Class 9007 Type C oiltight, watertight switches, compact and reed


    Original     		9007C 9006CT0101 E42259 LR25490 9006CT0101. Telemecanique LIMIT SWITCH XCK-J Telemecanique LIMIT SWITCH NFC 63-140 Telemecanique LIMIT SWITCH nfc 63-145 y2 XCK-J EN 60947-5-1 XCM NFC 63-145 y2 Telemecanique LIMIT SWITCH XCK-J 59 Telemecanique LIMIT SWITCH XCK-p Telemecanique LIMIT SWITCH XCK-J IEC 337-1 NFC 63 telemecanique xck-p IEC 60947-5-1 xck-j PDF

    an 7073

    Abstract: clb25 CX1-B0-14-810-32A-10C CA2-B0-34 magnetic switch 1480 BA 5991 AA1-BO-34-625-3B1-C CA2-B0
    Text: 1279-2012.qxp:QuarkCatalogTempNew 8/31/12 9:51 AM Page 1279 14 Circuit Breakers and Thermal Circuit Protectors RoHS RoHS Carling Technologies offers a full line of highly efficient hydraulic/magnetic circuit breakers that guarantee maximum protection. CS Series circuit breakers are ideal for integration into renewable energy


    Original     		CX1-B0-14-615-32A-12G CX2-B0-14-615-32A-13G CX1-B0-14-810-32A-10C CX2-B014-810-32A-06C C1005B-3B101BR3 C1005B-3B121BR3 C1005B-3B151BR3 C1005B-3B161BR3 CA2-BO-34-610-121-C CA2-BO-34-615-121-C an 7073 clb25 CA2-B0-34 magnetic switch 1480 BA 5991 AA1-BO-34-625-3B1-C CA2-B0 PDF

    Untitled

    Abstract: No abstract text available
    Text: IS43/46LR32200B Preliminary Information 512K x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32200B is 67,108,864 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 524,288 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted on a


    Original     		IS43/46LR32200B 32Bits IS43/46LR32200B 32-bit 90-ball -40oC 2Mx32 IS43LR32200B-6BLI PDF

    Untitled

    Abstract: No abstract text available
    Text: IS43/46LR16160F Advanced Information 4M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16160F is 268,435,456 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 4,194,304 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


    Original     		IS43/46LR16160F 16Bits IS43/46LR16160F 16-bit IS43LR16160F-6BLI 60-ball -40oC 16Mx16 IS46LR16160F-6BLA1 PDF

    Untitled

    Abstract: No abstract text available
    Text: IS43/46LR16160F Advanced Information 4M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16160F is 268,435,456 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 4,194,304 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


    Original     		IS43/46LR16160F 16Bits IS43/46LR16160F 16-bit 60-ball -40oC 16Mx16 IS43LR16160F-5BLI IS43LR16160F-6BLI PDF

    ba1s

    Abstract: GHZ micro-X Package macro-X ceramic MMIC Amplifier Micro-X
    Text: BIPOLARICS, INC. Part Number BA1 CASCADABLE SILICON BIPOLAR MONOLITHIC MICROWAVE INTEGRATED AMPLIFIER PRODUCT SPECIFICATION FEATURES: DESCRIPTION AND APPLICATIONS: Bipolarics' BA1 is a high performance MMIC amplifier designed for general purpose use in 50Ω systems over a


    Original     		dBm01 ba1s GHZ micro-X Package macro-X ceramic MMIC Amplifier Micro-X PDF

    Untitled

    Abstract: No abstract text available
    Text: IS43/46LR16160F 4M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16160F is 268,435,456 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 4,194,304 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


    Original     		IS43/46LR16160F 16Bits IS43/46LR16160F 16-bit 16Mx16 IS43LR16160F-5BLI 60-ball IS43LR16160F-6BLI -40oC PDF

    Untitled

    Abstract: No abstract text available
    Text: I S43/ 46LR16640A Advanced Information 16M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/ 46LR16640A is 1,073,741,824 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 16,777,216 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


    Original     		46LR16640A 16Bits 46LR16640A 16-bit 64Mx16 IS43LR16640A-5BLI 60-ball IS43LR16640A-6BLI PDF

    IS46LR16400B-6BLA2

    Abstract: No abstract text available
    Text: IS43/46LR16400B Preliminary Information 1M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16400B is 67,108,864 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 1,048,576 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted on a


    Original     		IS43/46LR16400B 16Bits IS43/46LR16400B 16-bit 60-ball -40oC 4Mx16 IS43LR16400B-6BLI IS46LR16400B-6BLA2 PDF

    4PR24

    Abstract: GCR1440
    Text: Cable Solutions FOR THE INDUSTRIAL AUTOMATION MARKET • Industrial Ethernet • Industrial Communication Protocols • Instrumentation and Control • Portable Power and Cord • Variable Frequency Drive Industrial Automation SERVING THE NEEDS OF THE INDUSTRIAL AUTOMATION MARKET


    Original     		COR-0081-0115 4PR24 GCR1440 PDF

    IS43LR16160F-6BL

    Abstract: LPDDR2 2Gb Memory
    Text: IS43/46LR16160F Preliminary Information 4M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16160F is 268,435,456 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 4,194,304 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


    Original     		IS43/46LR16160F 16Bits IS43/46LR16160F 16-bit -40oC 16Mx16 IS43LR16160F-5BLI IS43LR16160F-6BLI 60-ball IS43LR16160F-6BL LPDDR2 2Gb Memory PDF

    ba1s

    Abstract: QS500 BD7 274 FP 801 CRC-16 DS5001FP DS5002FP dallas nvram cmos
    Text: Bi b4E » DALLAS 2bl4130 0 0 0 7 ^ 2 SEMI CONDUCT OR S3b « D A L DS5001FP CORP DALLAS SEMICONDUCTOR DS5001FP 128K Soft Micro Chip FEATURES PIN ASSIGNM ENT • 8051 compatible uC adapts to its task - Accesses up to 128K bytes of nonvolatile S RAM In-system programming via on-chip serial port


    OCR Scan     		2bl4130 DS5001FP CRC-16 DS5001FP ba1s QS500 BD7 274 FP 801 DS5002FP dallas nvram cmos PDF

    Untitled

    Abstract: No abstract text available
    Text: Fast recovery silicon diodes. 1 Amp. to 1.5 Amps. The plastic material carries U/L recognition 94V-0. TY PE Axial Lead | S.M .D. Maximum Average Forward Rectified Current I fca v Ta A) I ( °C) Max. Recurrent Reverse Voltage V rrm (V) Repetitive Peak Forward


    OCR Scan     		41/SMA BA158 FR154 FR155 FR157 FR157-STR PDF

    104 k5k capacitor

    Abstract: motorola HEP 801 motorola HEP cross reference sony KHS - 313 Micropower Buffered Variable Voltage DS2251-64-12 motorola HEP 320 cross reference 80c154 intel k5k 104 capacitor 104 capacitor k5k
    Text: TABLE OF CONTENTS SOFT MICROCONTROLLER USER’S GUIDE Section 1 Introduction . 1 Section 2 Selection G u id e . 4


    OCR Scan     		PDF

    KM28U800

    Abstract: ba1g KM28U800-T
    Text: Preliminary FLASH MEMORY KM28U800-T/B 8M Bit 1M X8/512K x16 NOR Flash Memory FEATURES GENERAL DESCRIPTION • Single Voltage, 2.7 to 3.6 V tor Read and Write operations • Organization 1,048,576 x 8 bit (Byte mode) / 524,288 x 16 bit (Word mode) • Fast Read Access Time : 90 ns


    OCR Scan     		KM28U800-T/B X8/512K A18-A12 KM28U800 ba1g KM28U800-T PDF

    fagor fbu4 bridge rectifier

    Abstract: diode zener 600v 1a ZENER DIODE 5K diode bridge 2A 3ZX35C Zener Diode 3A zener diode 5A RGP10 diode RGP30 Diode bridge 600V 0.8A
    Text: FA G O R^ End Applications AUTOMOTIVE END APPLICATION If DEVICES USED DEVICE TYPE ALTERNATOR 3A B Y250,1N 5400, 1N5620GP G eneral Purpose Rectifier POWER STEERING 3A GP30 AM BAG 1A 1N4000GP, ESI 5KP Transient V oltage Suppressor INSTRUMENT PANEL 5KW 1A GP10, FS1


    OCR Scan     		1N5620GP 1N4000GP, 1N53S0, 1N5400, BZX85C 5390G BY39G, C1500R, 3ZX35C, fagor fbu4 bridge rectifier diode zener 600v 1a ZENER DIODE 5K diode bridge 2A 3ZX35C Zener Diode 3A zener diode 5A RGP10 diode RGP30 Diode bridge 600V 0.8A PDF

    RGP15T

    Abstract: RGP30T RGP10t rgp10s
    Text: FAGOR ^ G lass The plastic material carries U L recognition 94V-0. Peak Average Rectified Inverse Current Voltage Type VR R M at T a ^ ',v A (°C) (V) Surge Repetitive Peak Forward Forward Current Current VF at Wi r (A) Max. Forward Voltage Drop at Ta = 25°C


    OCR Scan     		DO-41, BA157GP BA158GP BA159GP 1IM830GP DO-41. 1N4933GP 1N4934GP 1N4935GP 1N4936GP RGP15T RGP30T RGP10t rgp10s PDF

    KL SN 102 94v-0

    Abstract: diode EGP 30D circuit diagram of 5kw smps full bridge MELF ZENER DIODE color bands blue y-349 diode GI 2W06G DO-213AB smd diode color marking code 6j 507 SMD TRANSISTOR smd diode marking g2a zener Marking BJ9
    Text: General Instrument / Power Semiconductor Division / I * r .jr > / INTRODUCTION General Instrument Corporation is a world leader in developing technology, systems and product solutions for the interactive delivery o f video and data. G l’s success results


    OCR Scan     		PDF