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    2014S Search Results

    2014S Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    BQ2014SN-D120 Texas Instruments NiCd/NiMH Gas Gauge W/1-Wire (DQ) I/F, 5 LED Drivers, Control Signals For BQ2004 Fast-Charge IC 16-SOIC 0 to 70 Visit Texas Instruments
    BQ2014SN-D120TR Texas Instruments NiCd/NiMH Gas Gauge W/1-Wire (DQ) I/F, 5 LED Drivers, Control Signals For BQ2004 Fast-Charge IC 16-SOIC 0 to 70 Visit Texas Instruments Buy
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    2014S Price and Stock

    Jamicon Corporation RJP20-14S

    2MM W TO W CONNECTOR 14P RETAINE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RJP20-14S Bulk 1,000 1
    • 1 $0.16
    • 10 $0.12
    • 100 $0.0919
    • 1000 $0.07064
    • 10000 $0.06263
    		Buy Now

    Century Spring Corp 72014SCS

    COMP O= .720,L= .75,W= .072
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 72014SCS Box 507 1
    • 1 $12.75
    • 10 $12.75
    • 100 $2.167
    • 1000 $2.167
    • 10000 $2.167
    		Buy Now

    Diodes Incorporated AP2014SL-13

    IC REG CTRLR BUCK 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AP2014SL-13 Digi-Reel 319 1
    • 1 $1.61
    • 10 $1.445
    • 100 $1.1617
    • 1000 $1.0908
    • 10000 $1.0908
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    AP2014SL-13 Cut Tape 319 1
    • 1 $1.61
    • 10 $1.445
    • 100 $1.1617
    • 1000 $1.0908
    • 10000 $1.0908
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    Texas Instruments BQ2014SN-D120

    IC BATTERY GAS GAUGE 16-SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BQ2014SN-D120 Tube 103 1
    • 1 $22.38
    • 10 $17.923
    • 100 $22.38
    • 1000 $14.63556
    • 10000 $14.63556
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    TME BQ2014SN-D120 1
    • 1 $27.6
    • 10 $24.8
    • 100 $21.9
    • 1000 $18.4
    • 10000 $18.4
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    ITT Interconnect Solutions CA3102E20-14S-B-F80

    CONN RCPT PNL MNT W/SKT 5POS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CA3102E20-14S-B-F80 Bulk 52 1
    • 1 $62.52
    • 10 $48.489
    • 100 $38.3259
    • 1000 $35.12924
    • 10000 $35.12924
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    Find more 2014S price and stock on Findchips.com

    2014S Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2-014/SILICONE Glenair CONNECTOR ACCESSORY Original PDF
    2014-ST Curtis Industries Terminal Blocks - Barrier Blocks, Connectors, Interconnects, TERM BLOCK BARRIER DBL SLDR Original PDF

    2014S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2014 Vishay Intertechnology, Inc. SUPER 12 Featured Products www.vishay.com/ref/2014s12 S12 Super 12 Featured Products Table of Contents 1 2 WSLP High-Power Surface-Mount Power Metal Strip Current Sensing Resistor TMBS® in SMPA Trench MOS Barrier Schottky Rectifiers in


    Original     		PDF com/ref/2014s12 TCPT1350X01 TCUT1350X01 SiZ340DT VMN-MS6834-1312

    QUAD HIFREQ

    Abstract: No abstract text available
    Text: 2014 Vishay Intertechnology, Inc. Super 12 Featured Products www.vishay.com/ref/2014s12 S12 Super 12 Featured Products Table of Contents 1 WSLp 2 SmpAパッケージのTmBS 3 prAhT 4 高電力表面実装型Power Metal Strip 電流検出抵抗器 薄型SMPA パッケージのTrench MOSバリア・ショットキー


    Original     		PDF com/ref/2014s12 TCpT1350X01 TCuT1350X01 SiZ340DT VMN-MS6882-1403 QUAD HIFREQ

    UU 126 CORE

    Abstract: uu1116 UU93 uu1116s UU CORE SQ2014 uu 10.5
    Text: SAMWHA ELECTRONICS SQ, SQE, UU CORES SQ17~SQ40 SQE20~SQE35 UU10~UU93 Ordering Code System SM-100 Material Core Type SQ 2014S Core Size 107 108 SAMWHA ELECTRONICS SQ, SQE CORES SQ1715S Part No. Type SQ Core Set Parameters Electrical Characteristics SQE SQ2115S


    Original     		PDF SQE20 SQE35 SM-100 2014S SQ1715S SQ2014S SQ2115S SQ2116S 65min. PL-11 UU 126 CORE uu1116 UU93 uu1116s UU CORE SQ2014 uu 10.5

    Untitled

    Abstract: No abstract text available
    Text: Tecate Group Film Capacitors TYPE 2014S POLYPROPYLENE FILM & FOIL RADIAL DIP, SERIES WOUND, HV POLYPROPYLENE OPP SPECIFICATIONS Performance Characteristics Operating Temperature -25°C ~ +85°C. Range Voltage Range 1000, 1250, 1600, & 2000VDC. Capacitance Range


    Original     		PDF 2014S 2000VDC. 40000Mâ 500Vrms. 2014S 2014S-1K0/103K25F 2000WVDC

    1600WVDC

    Abstract: Tecate Group
    Text: Tecate Group POLYPROPYLENE FILM & FOIL RADIAL DIP, SERIES WOUND, HV POLYPROPYLENE OPP TYPE 2014S SPECIFICATIONS Performance Characteristics Operating Temperature -25°C ~ +85°C. Range Voltage Range 1000, 1250, 1600, & 2000VDC. Capacitance Range 0.001µF ~ 0.33µF.


    Original     		PDF 2014S 2000VDC. 40000M. 500Vrms. 2014S 2014S-1K0/103K25F 25stries 2000WVDC 1600WVDC Tecate Group

    Untitled

    Abstract: No abstract text available
    Text: POLYPROPYLENE FILM CAPACITORS TYPE 2014S 2014S capacitors are good for pulse and high frequency applications, with their low dissipation factor. High insulation resistance under high humidity conditions. GENERAL SPECIFICATION 1. OPERATING TEMPERATURE: -25°C to +85°C


    Original     		PDF 2014S 2014S 000MW 914-250/104K10B1/5 914-250/104K10B5/5

    Untitled

    Abstract: No abstract text available
    Text: POLYPROPYLENE FILM CAPACITORS TYPE 2014S 2014S capacitors are good for pulse and high frequency applications, with their low dissipation factor. High insulation resistance under high humidity conditions. GENERAL SPECIFICATION 1. OPERATING TEMPERATURE: -25°C to +85°C


    Original     		PDF 2014S 2014S

    Untitled

    Abstract: No abstract text available
    Text: Reference Design Manual DN[Document ID] NFCC Reference Board AS3911-QF-RD-NFCC ams Reference Design Manual, Confidential [v1-00] 2014-Sep-12 Page 1 Document Feedback NFCC Reference Board Table of Contents 1 Introduction . 4


    Original     		PDF AS3911-QF-RD-NFCC v1-00] 2014-Sep-12 2014-May-14) 2014-Aug-14)

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1315N Rev. 0, 7/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1315NR1 Designed for wideband defense, industrial and commercial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


    Original     		PDF MMRF1315N MMRF1315NR1 IS--95 7/2014Semiconductor,

    MTL ICC 317

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMZ25333B Rev. 0, 6/2014 2 W High Gain Power Amplifier for Cellular Infrastructure InGaP GaAs HBT The MMZ25333B is a versatile 3-stage power amplifier targeted at driver and pre-driver applications for macro and micro base stations and final-stage


    Original     		PDF MMZ25333B MMZ25333B MMZ25333BT1 6/2014Semiconductor, MTL ICC 317

    MMRF1019NR4

    Abstract: No abstract text available
    Text: Document Number: MMRF1019N Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1019NR4 RF power transistor designed for pulse applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for


    Original     		PDF MMRF1019N MMRF1019NR4 7/2014Semiconductor, MMRF1019NR4

    24-7S

    Abstract: 2211P 2211S 2213p
    Text: 151-2012:QuarkCatalogTempNew 8/20/12 1:17 PM Page 151 2 Circular Power Connectors — 97 Series TEST & MEASUREMENT MIL-C-5015 Style Types A and B See page 144 for dimension table. RoHS Non-Compliant standard finish no deviation code of olive drab chromate over cadmium


    Original     		PDF MIL-C-5015 7-3106A 24-7S 2211P 2211S 2213p

    22-22P

    Abstract: 2216S 20-27P 2215s 70-108224 70-108050
    Text: 150-2012:QuarkCatalogTempNew 8/20/12 1:11 PM Page 150 TEST & MEASUREMENT 2 Circular Power Connectors — 97 Series MIL-C-5015 Style Types A and B See page 144 for dimension table. RoHS Non-Compliant standard finish no deviation code of olive drab chromate over cadmium plating. The inserts are also RoHS NonCompliant as the solder cups contain tin/lead solder. Non-Compliant assemblies are also offered with finishes of clear chromate over cadmium plating (639), black zinc (621)


    Original     		PDF MIL-C-5015 7-3100A 20-8P 20-8S 20-11P 20-11S 20-14P 20-14S 20-15P 20-15S 22-22P 2216S 20-27P 2215s 70-108224 70-108050

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MMZ25332B Rev. 2, 5/2014 Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology InGaP HBT MMZ25332BT1 High Efficiency/Linearity Amplifier The MMZ25332B is a 2-stage, high linearity InGaP HBT broadband amplifier


    Original     		PDF MMZ25332B MMZ25332BT1 MMZ25332B 11g/n) 5/2014Semiconductor,

    TUI-lf-9

    Abstract: ATC700B392JT50X
    Text: Document Number: MMRF1016H Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1016HR5 This 600 W RF power LDMOS transistor is designed primarily for wideband RF power amplifiers with frequencies up to 500 MHz. This device is unmatched


    Original     		PDF MMRF1016H MMRF1016HR5 7/2014Semiconductor, TUI-lf-9 ATC700B392JT50X

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MHT2000N Rev. 0, 5/2014 RF LDMOS Integrated Power Amplifiers Wideband integrated circuit is suitable for industrial heating applications operating at 2450 MHz. This multi-stage structure is rated for 26 to 32 V


    Original     		PDF MHT2000N MHT2000NR1 MHT2000GNR1 5/2014Semiconductor,

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MMRF1310H Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR military, industrial including laser and plasma exciters , broadcast (analog and digital),


    Original     		PDF MMRF1310H MMRF1310HR5 MMRF1310HSR5 MMRF1310HR5 7/2014Semiconductor,

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5300N Rev. 1, 6/2014 RF Power LDMOS Transistors MRFE6VP5300NR1 MRFE6VP5300GNR1 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR


    Original     		PDF MRFE6VP5300N MRFE6VP5300NR1 MRFE6VP5300GNR1 MRFE6VP5300NR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT21S220W02S Rev. 0, 2/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 50 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability


    Original     		PDF AFT21S220W02S AFT21S220W02SR3 AFT21S220W02GSR3 2/2014Semiconductor,

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT21S140W02S Rev. 0, 2/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 32 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability


    Original     		PDF AFT21S140W02S AFT21S140W02SR3 AFT21S140W02GSR3 2/2014Semiconductor,

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S7170N Rev. 2, 2/2014 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S7170NR3 Designed for base station applications with frequencies from 618 to 803 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8S7170N MRF8S7170NR3 2/2014Semiconductor,

    8029L

    Abstract: MN5128 607p 2254FAP I2132 MN3861SA AN2514S 3861SA 2154F 2514S
    Text: ICs/LSIs for VCR, Camera • For 8mm VCR O p e ra tin g V o lta g e C a te g o ry V ideo signal p ro c e s s o r A udio signal p ro c e s s o r S erv o c o n tro l F u n c tio n s P ro c e s s T y p e N o. P ackage V N o. M N 6173S 5 CM OS C h ro m a s ig n a l p ro c e s s in g


    OCR Scan     		PDF 6173S SO-18D 6297S 6170AS SO-20D 28-SD -QKH/80-QFH SO-28D 24-SD 8029L MN5128 607p 2254FAP I2132 MN3861SA AN2514S 3861SA 2154F 2514S

    transistor a2160

    Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
    Text: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124


    OCR Scan     		PDF N12861 N13801 MN1381 N13811 N13821 N150402 15P0802 N150412 MN15151 MN152121 transistor a2160 transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mini circuits 15542 A1270 Y AN 5606K

    Untitled

    Abstract: No abstract text available
    Text: - 94 AN 2458SH PAL/NTSC^st*^'* = 7 — • ^ > 3 — ^'IC •St * A N 2 4 5 8 S H Ü , ' I ' i l - f f i H f i t i l 9 -Í V ^ P A L / N T S C t T Ä « i^i-^ 7 -ÿ — •3 - > - i —y \ c . • tK— 9 - T j v * V - T ' - t ' X S ti X • U— • ig i^ itF E : 4 .8V (typ


    OCR Scan     		PDF