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    2016 STATIC RAM Search Results

    2016 STATIC RAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD2114A/BVA Rochester Electronics LLC STATIC RAM; 1K X 4 Visit Rochester Electronics LLC Buy
    CDP1824CD/B Rochester Electronics LLC CDP1824C - 32-Word x 8-Bit Static RAM Visit Rochester Electronics LLC Buy
    CY7C09389V-9AXI Rochester Electronics CY7C09389 - 3.3 V 64 K X 18 Synchronous Dual-Port Static RAM, Industrial Temp Visit Rochester Electronics Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation

    2016 STATIC RAM Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    6116 RAM

    Abstract: ic 6116 TMM2016 6116 SRAM 6116 ram 6116 6116 memory 6116 CMOS RAM 6116 static RAM chip SY2128
    Text: 2016/6116/9128 2K x 8 SRAM Page 1 of 5 2016/6116/9128 - 2048x8 bit Static RAM Description The 2016/6116 series of Static RAMs are 16,384 bit memories organized as 2,048 words by 8 bits and operates on a single +5V supply. 2016's and equivalents are generally NMOS or MOS


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    2048x8 450ns 10-100mA CY7C128 IDT6116A V61C16 VT20C19 CXK5814P TC2018 MCM2018A 6116 RAM ic 6116 TMM2016 6116 SRAM 6116 ram 6116 6116 memory 6116 CMOS RAM 6116 static RAM chip SY2128 PDF

    GR281

    Abstract: 2716 eprom 4016 RAM 2716 eprom datasheet memory 2716 eprom 2716 pd446 static ram 4802 2716 2k eprom retention memory ram 6116
    Text: GR281 2K x 8 NON-VOLATILE RAM GR281 (2K x 8) NON-VOLATILE RAM Symbol Vdd Vi/o Temp DESCRIPTION The GR281 is a 2048 word by 8 bits (2K x 8) nonvolatile CMOS Static Ram, fabricated from advanced silicon gate CMOS technology and a high reliability lithium power cell.


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    GR281 GR281 2000/95/EC 2716 eprom 4016 RAM 2716 eprom datasheet memory 2716 eprom 2716 pd446 static ram 4802 2716 2k eprom retention memory ram 6116 PDF

    MIC2000

    Abstract: MIC2006 MIC2016 sot-23-6 2mm*2mm
    Text: MIC2006/2016 Fixed Current Limit Power Distribution Switch General Description Features The MIC2006 and the MIC2016 are current limiting, high-side power switches, designed for general purpose power distribution and control in PCs, PDAs, printers and other self-powered systems.


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    MIC2006/2016 MIC2006 MIC2016 M9999-080305 MIC2006/MIC2016 MIC2000 sot-23-6 2mm*2mm PDF

    MIC20X3

    Abstract: MIC2005A-1YM5 MIC20X4 SOT23-6 MARKING 2019 sot-23-6 Marking Information sot-23 Marking M6 2019 SOT MIC2005 MiC2007YML pin diagram of MOSFET
    Text: MIC20XX Family Fixed and Adjustable Current Limiting Power Distribution Switches General Description Features MIC20XX family of switches are current limiting, high-side power switches, designed for general purpose power distribution and control in digital televisions DTV ,


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    MIC20XX M9999-012109-A MIC20X3 MIC2005A-1YM5 MIC20X4 SOT23-6 MARKING 2019 sot-23-6 Marking Information sot-23 Marking M6 2019 SOT MIC2005 MiC2007YML pin diagram of MOSFET PDF

    Untitled

    Abstract: No abstract text available
    Text: MIC20XX Family Fixed and Adjustable Current Limiting Power Distribution Switches General Description Features MIC20XX family of switches are current limiting, high-side power switches, designed for general purpose power distribution and control in digital televisions DTV , printers,


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    MIC20XX M9999-080211-D PDF

    MIC2019YM6

    Abstract: marking l05 sot-23 marking AE 5pin MIC20XX MIC2009A 511 MOSFET MICREL SOT-23 MIC2009A1YM6 AE MARKING 5PIN MIC2005A-2
    Text: MIC20XX Family Fixed and Adjustable Current Limiting Power Distribution Switches General Description Features MIC20XX family of switches are current limiting, high-side power switches, designed for general purpose power distribution and control in digital televisions DTV , printers,


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    MIC20XX M9999-080211-D MIC2019YM6 marking l05 sot-23 marking AE 5pin MIC2009A 511 MOSFET MICREL SOT-23 MIC2009A1YM6 AE MARKING 5PIN MIC2005A-2 PDF

    SOT23-6 MARKING FF05

    Abstract: 2005l MIC2005A-1YM5 marking D12 6pin MIC2009A1YM6 MIC2009A-1YM6 FA51 SOT23-6 MARKING m5 MIC2009A-2YM6 2019X
    Text: MIC20XX Family Fixed and Adjustable Current Limiting Power Distribution Switches General Description Features MIC20XX family of switches are current limiting, high-side power switches, designed for general purpose power distribution and control in digital televisions DTV , printers,


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    MIC20XX Purchaser9-020311-D SOT23-6 MARKING FF05 2005l MIC2005A-1YM5 marking D12 6pin MIC2009A1YM6 MIC2009A-1YM6 FA51 SOT23-6 MARKING m5 MIC2009A-2YM6 2019X PDF

    FA51

    Abstract: MIC2009 MIC2009YM6 MIC2009YML MIC2009A-1YM6 marking D12 6pin SOT23-6 MARKING stb FG08 MIC2008YML mic2019ym6
    Text: MIC20XX Family Fixed and Adjustable Current Limiting Power Distribution Switches General Description Features MIC20XX family of switches are current limiting, high-side power switches, designed for general purpose power distribution and control in digital televisions DTV , printers,


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    MIC20XX M9999-090309-A FA51 MIC2009 MIC2009YM6 MIC2009YML MIC2009A-1YM6 marking D12 6pin SOT23-6 MARKING stb FG08 MIC2008YML mic2019ym6 PDF

    Untitled

    Abstract: No abstract text available
    Text: DMP2004DWK DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • • Dual P-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage VGS TH <1V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage


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    DMP2004DWK AEC-Q101 OT363 J-STD-020 MIL-STD-202, OT363 DS30940 PDF

    VI05

    Abstract: DS2016 DS2016-100 DS2016S
    Text: DS 2016 DALLAS s e m ic o n d u c to r DS2016 2K x 8 3V/5V Operation Static RAM FEATURES PIN ASSIGNMENT • Low pow er C M OS design • S tandby current A7 C 1 24 □ VCC A6 C 2 ^ 23 □ A8 A9 - 50 nA m ax at tA = 25°C V Cc = 3.0V A5 C 3 22 □ - 100 nA max at tA = 25°C V Cc = 5.5V


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    DS2016 24-pin DS2016S VI05 DS2016 DS2016-100 PDF

    Untitled

    Abstract: No abstract text available
    Text: DS2016 DALLAS SEMICONDUCTOR DS2016 2K x 8 3V/5V Operation Static RAM FEATURES PIN ASSIGNMENT • Low power CM OS design • Standby current - 50 nA max at tA = 25°C VCc = 3.0V - 100 n A m a x at tA = 25°C V GG = 5.5V - 1 |uA max at tA = 60°C Vc c = 5.5V


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    DS2016 DS2016 100ns 150ns 24-PIN PDF

    Untitled

    Abstract: No abstract text available
    Text: DS2016 DALLAS SEMICONDUCTOR DS2016 2K x 8 3V Operation Static RAM PIN ASSIGNMENT FEATURES • Low power CMOS design • Standby current 50 nA max at tA = 25°C V cc = 3.0V 100 nA max at tA = 25°C Vc c = 5.5V 1 nA max at tA = 60°C V cc = 5.5V • Full operation for V cc = 5.5V to 2.7V


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    DS2016 DS2016 DS2016S 24-PIN PDF

    Untitled

    Abstract: No abstract text available
    Text: RPR 2K x 8 NON-VOLATILE RAM MsmumnsusA • • • • • • • • • GR281 Has instant power circuit, does not require voltage slew Plug-in replacement for Static RAM chips Retains data for up to 10 years No erasure required Functions as Data or Proram RAM


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    GR281 24-pin GR281 PD446, PDF

    Untitled

    Abstract: No abstract text available
    Text: apR FAST ACCESS - 2K x 8 NON-VOLATILE RAM • • • • • • • GR281-4 Plug-in replacement for Static RAM 10 years data retention No erasure required Fast power down Functions as Data or Program RAM No limit to number of programing cycles Standard 24-pin JEDEC pinout


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    GR281-4 24-pin GR281 PD446 GR281 PDF

    ram 8416

    Abstract: No abstract text available
    Text: FAST A C C E S S - 2K x 8 NON-VOLATILE RAM • • • • • • • GR281-4 Plug-in replacement for Static RAM 10 years data retention No erasure required Fast power down Functions as Data or Program RAM No limit to number of programing cycles Standard 24-pin JEDEC pinout


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    GR281-4 24-pin GR281 PD446 ram 8416 PDF

    NVR2

    Abstract: pd446
    Text: GREENWICH 2K x 8 NON-VOLATILE RAM INSTRUMENTS LTD • • • • • • NVR2 Plug-in replacement for Static RAM chips Retains data for up to 10 years No erasure required Functions as Data or Program RAM No limit to number of programming cycles Fits standard 24-pin socket


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    24-pin PD446 NVR2 PDF

    gr281

    Abstract: GR281, 2K x 8
    Text: 2 K x 8 GR 281 NON VOLATILE RAM WSTRUMENTS ITO * Plug-in replacement for Static R A M * 10 years data retention * No erasure required * Fast power down * Functions as Data or Program R A M * No lim it to number of programming cycles * Standard 24-pin JEDEC pinout


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    24-pin GR281 15/iS. GR281, 2K x 8 PDF

    Vitarel Microelectronics

    Abstract: VMS128K8M-100 32K8 VMS128K8-100 2015 static ram static ram 2015
    Text: VITAREL MICROELECTRONICS V M S 1 2 8 K 8 M -1 00 1M -B IT C M O S S TA TIC RAM 32 Pin C eram ic DIP - May 1987 D E S C R IP T IO N The VM S128K 8M -100 is a 128K module x 8 bits asynchronous, CMOS static random access memoiy on a 32 pin ceramic DIP. It's very low standby power


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    VMS128K8M-100 100ns 512K16 Vitarel Microelectronics 32K8 VMS128K8-100 2015 static ram static ram 2015 PDF

    Untitled

    Abstract: No abstract text available
    Text: D S 2 6C 31 M Q M L DS26C31MQML CMOS Quad TRI-STATE Differential Line Driver T ex a s In s t r u m e n t s Literature Number: SNOSAS2 9 DS26C31MQML Sem iconductor CMOS Quad TRI-STATE D Differential Line Driver All inputs are protected against damage due to electrostatic


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    DS26C31MQML DS26C31MQML DS26C31 DS26C31 RS-422 RS-422; PDF

    IMS B404

    Abstract: T800 sRAM 2116 imsb404 2016 RAM
    Text: Chapter 21 173 IMS B404 TRAM 32—bit transputer 2 Mbytes Size 2 mos Engineering Data Reset Analyse NotError Subsystem _ PAL SSReset SSAnalyse notSSError FEATURES GENERAL DESCRIPTION • IMST800 Transputer • 32 Kbytes of zero wait-state SRAM • 2 Mbytes of single wait-state DRAM


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    32--bit IMST800 B404-3 T800-20 B404-8 T425-25 B404-5 T800-25 IMS B404 T800 sRAM 2116 imsb404 2016 RAM PDF

    Untitled

    Abstract: No abstract text available
    Text: DS2016. DS2016S DALLAS SEMICONDUCTOR DS2016, DS2016S 2K x 8 3V Operation Static RAM PIN ASSIGNMENT FEATURES • Low power CMOS design A7 • Standby current A6 C 1 C 2 ASH 50 nA max at tA = 25°C V cc = 3.0V 100 nA max at t* = 25°C Vcc = 5.5V 1 jA max at t* = 60°C Vcc = 5.5V


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    DS2016. DS2016S DS2016, 24-PIN PDF

    Untitled

    Abstract: No abstract text available
    Text: t> rij 005403 D p m DPS8808, DPS8808A 8K 8 Dense-Pac Microsystems, Inc. CM OS SRAM X DESCRIPTION: The DPS8808 A>85, -120, -150, -200 is an 8K by 8 bit high speed static RAM constructed on a ceramic substrate using 4 DP6116 (2,048 x 8 static RAMs in leadless chip carriers Functional


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    DPS8808, DPS8808A DPS8808 DP6116 DPS8808A PDF

    Untitled

    Abstract: No abstract text available
    Text: DS2016 DALLAS SEMICONDUCTOR DS2016 2K x 8 3V/5V Operation Static RAM FEATURES PIN ASSIGNMENT • Low power CMOS design • Standby current - 50 nA max at tA = 25°C Vc c = 3.0V - 100 nA max at tA = 25°C V cc = 5.5V 1 |iA max at tA = 60°C Vc c = 5.5V • Full operation for V qc = 5.5V to 2.7V


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    DS2016 DS2016 DS2016S 24-PIN 2bl4130 PDF

    vfd 5x7

    Abstract: DIGITAL VFD CLOCK IC vfd 14 segment 34 pin 4 digit 7 segment display 14 pin 2 digit 7 segment display
    Text: MITSUBISHI DIGITAL ASSP M66004SP/FP 16-DIGIT 5X7-SEGMENT VFD CONTROLLER DESCRIPTION The M 66004 is a 16-digit 5x7-segm ent vacuum fluorescent display (VFD) controller using the silicon gate CMOS tech­ nology. It contains 160 ROM characters and 16 user-defined RAM


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    M66004SP/FP 16-DIGIT JIS-C-6220. JIS-C-6220) vfd 5x7 DIGITAL VFD CLOCK IC vfd 14 segment 34 pin 4 digit 7 segment display 14 pin 2 digit 7 segment display PDF