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    DE275-201N25A

    Abstract: No abstract text available
    Text: DE275-201N25A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 200


    Original     		PDF DE275-201N25A 201N25A 1100P DE275-201N25A

    DE275-201N25A

    Abstract: No abstract text available
    Text: DE275-201N25A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous ±20 V VGSM Transient


    Original     		PDF DE275-201N25A 201N25A 1100P DE275-201N25A