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    Untitled

    Abstract: No abstract text available
    Text: VG26 V (S)17405 4,194,304 x 4 - Bit CMOS Dynamic RAM VIS Description The device CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single


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    26/24-pin 50/60ns 127mm) 025mm) 1G5-0124 PDF

    IBM0164405B16M

    Abstract: IBM0164405BJ5B-50 IBM0164405BJ5B-60 IBM0164405P16M
    Text: IBM0164405B16M x 413/11, 3.3V, EDO. IBM0164405P16M x 413/11, 3.3V, LP, SR, EDO. IBM0164405B IBM0164405P 16M x 4 13/11 EDO DRAM Features • 16,777,216 word by 4 bit organization • Read-Modify-Write • Single 3.3 ± 0.3V power supply • Performance: • Extended Data Out Hyper Page Mode


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    IBM0164405B16M IBM0164405P16M IBM0164405B IBM0164405P 128ms 104ns IBM0164405BJ5B-50 IBM0164405BJ5B-60 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS SRAM KM64V4002B/BL, KM64V4002BI/BLI Document Title 1Mx4 Bit with OE High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark


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    KM64V4002B/BL, KM64V4002BI/BLI 32-TSOP2-400F 047MAX 002MIN PDF

    MAS 10 RCD

    Abstract: No abstract text available
    Text: VIS VG26 V (S)17405 4,194,304 x 4 - Bit CMOS Dynamic RAM Description The device CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single


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    26/24-pin 50/60ns 127mm) 025mm) 1G5-0124 MAS 10 RCD PDF

    Untitled

    Abstract: No abstract text available
    Text: VIS VG26 V (S)17405 4,194,304 x 4 - Bit CMOS Dynamic RAM Description The device CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single


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    26/24-pin 50/60ns 127mm) 025mm) 1G5-0124 PDF

    17405CJ

    Abstract: No abstract text available
    Text: VG26 V (S)17405C 4,194,304 x 4 - Bit CMOS Dynamic RAM VIS Description The device CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single


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    17405C 26/24-pin 50/60ns 127mm) 025mm) 1G5-0088 17405CJ PDF

    27s185

    Abstract: No abstract text available
    Text: A m 2 7 S 1 8 5 /2 7 S 1 8 5 A Advanced Micro Devices 8,192-Bit 2048x4 Bipolar PROM DISTINCTIVE CHARACTERISTICS Ultra-fast access time " A " version (35 ns Max.) — Fast access time Standard version (50 ns Max.) — allow tremendous system speed improvements


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    192-Bit 2048x4) Am27S 185/27S KS000010 Am27S185/27S185A 27s185 PDF

    S485A

    Abstract: 2048X4 53S841 tS1820 53S841A 63S841 63S841A A933 63S485
    Text: 5 3 /6 3 S 8 4 1 5 3 /6 3 S 8 4 1 A High Performance 2 0 4 8 x 4 PROM TiW PROM Family Features/ Benefits Description • 35-ns maximum access time T h e 53/63S841 a n d 5 3/6 3S 8 4 1 A a re 2048x4 b ip o la r P R O M s fe a tu rin g lo w in p u t c u rre n t P N P in p u ts , fu ll S c h o ttk y cla m p in g ,


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    2048x4 53/63S841 53/63S841A 35-ns 53/63S841A S485A 53S841 tS1820 53S841A 63S841 63S841A A933 63S485 PDF

    6331-1 prom

    Abstract: No abstract text available
    Text: Generic NiCR PROM Fam ily 53/63XXX-1 53/63XXX-2 F eatures/ Benefit Description • From 256 Bit to 8192 Bit memory The 53/63XX series generic PROM fam ily offers a w ide selection of size and organizations. The 4-bit w ide PROMs range from 256x4 to 2048x4 and feature up w ard/dow nw ard pin out com ­


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    53/63XXX-1 53/63XXX-2 53/63XX 256x4 2048x4 1024x8 24-pin 6331-1 prom PDF

    82HS185

    Abstract: N82HS185 N82HS185A S82HS185
    Text: MAY 1982 BIPOLAR MEMORY DIVISION 8192-BIT BIPOLAR PROM 2048x4 _ 82HS485/82HS185A (T.S.) DESCRIPTION FEATURES The 82HS185 is fie ld program m able, vihich means th a t cu sto m patte rn s are im m ed iate ­ ly available by fo llo w in g th e fu sin g p roce ­


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    8192-BIT 2048x4) 82HS185/82HS185A 82HS185 N82HS185 N82HS18SA S82HS185 N82HS185 N82HS185A S82HS185 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2048x4 Diagnostic Registered PROM 53DA841 63DA841 w ith Asynchronous Enable and Output Initialization Features/Benefits Description • Asynchronous output enable • Programmable asynchronous output Initialization • Provides system diagnostic testing with system


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    2048x4 24-pin 24-mA 53DA841 63DA841 53/63DA841 53/63DA841 PDF

    5t83

    Abstract: KS000010
    Text: a Am 27 S 185/27 S 185 A 8,192-Bit 2048x4 Bipolar PROM Devices DISTINCTIVE CHARACTERISTICS • • Ultra-fast access time "A " version (35 ns Max.) — Fast access time Standard version (50 ns Max.) — allow tremendous system speed improvements Platinum-Silicide fuses guarantee high reliability, fast


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    192-Bit 2048x4) Am27S185 27S185/27S185A KS000010 Am27S185/27S185A 5t83 KS000010 PDF

    6331-1

    Abstract: 6301-1 prom 6349-1 Monolithic Memories 6301 PROM programming 6309-1 6341 prom 6301-1 monolithic memories prom 5349 6306-1 prom 6309
    Text: Generic NiCR PROM Family 53/63X X -1 Description Features/ Benefits The 53/63XX-1-series generic PROM fam ily offers the widest selection of sizes and organizations available in the industry. The 4-bit wide PROMs range from 256x4 to 2048x4 and feature upward/downward pin out com patibility in the space saving 16


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    53/63XX-1 MIL-M-38510) 53/63XX-1-series 256x4 2048x4 6331-1 6301-1 prom 6349-1 Monolithic Memories 6301 PROM programming 6309-1 6341 prom 6301-1 monolithic memories prom 5349 6306-1 prom 6309 PDF

    2580N

    Abstract: No abstract text available
    Text: s i g r i Q 8 1 9 2 - B IT t i c s S T A T IC O K Q f l READ O NLY M EM O RY * u o u SILICON GATE MOS 2500 SERIES DESCRIPTION PIN CONFIGURATION Top View- The 2680 it an 8,192-Bit Read-Only Memory available in a 2048x4 organization. This device has TTL compatible inputs


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    192-Bit 2048x4 625ns VGG--12V 33I333133 S555S5 5SSSSSSSS55S5S5SS5S5555SS55SS5SSSS 5S55555SD5I55S 991919l9 2580N PDF

    Untitled

    Abstract: No abstract text available
    Text: High Performance 2 0 4 8 x 4 PROM TiW PROM Family 5 3 /6 3 S 8 4 1 5 3 /6 3 S 8 4 1 A ¿3 s ^ Features/Benefits Description • 35-ns maximum access time The 53/63S841 and 53/63S841A are 2048x4 bipolar PROMs featuring low input current PNP inputs, full Schottky clamping,


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    35-ns 53/63S841 53/63S841A 2048x4 63S841A 63S841 53S841A 53S841 PDF

    63ls1640

    Abstract: No abstract text available
    Text: High Performance Low Power Schottky Generic PROM Family s3/ 63ls x x x Features/ Benefits Description • Largest generic low power Schottky PROM family available The 53/63LSXXX series generic PROM fam ily offers the lowest power and fastest speeds available in the industry. The 4-bitwide PROMs range from 256x4 to 2048x4 and feature upward/


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    53/63LSXXX 256x4 2048x4 2048x8. 256X8 63RA283 53RA283 53RA483 512x8 63RA483 63ls1640 PDF

    63S841

    Abstract: No abstract text available
    Text: High Performance 2 0 4 8 x 4 PROM TiW PROM Family 5 3 /6 3 S 8 4 1 5 3 /6 3 S 8 4 1 A Featu res/ Benefits Description • 35-ns maximum access time The S3/63S841 and 53/63S841A are 2048x4 bipolar PROMs featuring low input current PNP inputs, full Schottky clamping,


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    35-ns S3/63S841 53/63S841A 2048x4 63S841 PDF

    53DA841

    Abstract: 63DA841
    Text: 2 0 4 8 x 4 Diagnostic Registered PROM 53D A 841 63D A 841 w ith Asynchronous Enable and Output Initialization Features/Benefits Description • Asynchronous output enable • Programmable asynchronous output Initialization • Provides system diagnostic testing with system


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    2048x4 53DA841 63DA841 24-pin 24-mA diagnosti25 53/63DA841 53DA841 63DA841 PDF

    mcm6830

    Abstract: EXORCISER motorola M68MM01A 7642T MC68B54 transistor bf 175 motorola application note 6809 6844 MMS1117 EXORCISER motorola M68MM01A2
    Text: The MS800MM0S Support Elem ents Other NMOS MPUs MC3870 ^ MICROCOMPUTER COMPONENTS CMOS MCUS/ICUS MC14S00B, MC141000/1206 Bipolar 4-Blt slice MPU Fam ilies M2900 TTL , M10800 (MECL) nm os Memories RAM, EPROM, ROM CMOS Memories RAM, ROM MEMORY PRODUCTS Bipoiar Memories


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    MS800MM0S MC3870 MC14S00B, MC141000/1206 M2900 M10800 M6800 MC14500B, MC141000/1200 mcm6830 EXORCISER motorola M68MM01A 7642T MC68B54 transistor bf 175 motorola application note 6809 6844 MMS1117 EXORCISER motorola M68MM01A2 PDF

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


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    27S43

    Abstract: No abstract text available
    Text: Product Specifications PROMs 29000 Series PROMs Raytheon 29000 Series Field Programmable Read-Only Memories Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Low po w e r S ch o ttky te ch n o lo g y H ighly reliable n ichro m e fuses Three-state ou tputs


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    HN462532G

    Abstract: HN462732G HN4827128G-25 6116ALSP-15 482732AG 6116LP 613128P HM4816AP4 6116ALP-10 HM4816AP-4
    Text: \ HITACHI IC MEMORY DATA BOOK 0 HITACHI 1 IN D EX • • • • • • Q U IC K R E F E R E N C E G U ID E TO H IT A C H I IC M EM O R IES . 8 MOS R A M .


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    7611 prom

    Abstract: mi 7641 7641 prom 1024X4 7621 prom 4096X4 lansdale PROM 32x8
    Text: Bipolar PROM 7 MAXIMUM RATINGS Rating HARRIS INTEGRATED CIRCUITS BIPOLAR PROM 7600 Series Value Unit Output or Supply Voltage - Vcc -.3 to 7 V Address/Enable Input Voltage 5.5 V Address/Enable Input Current -20 mA -65 to +175 °C Storage Temperature - Tstg


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    14-LEAD 16-LEAD 10-LEAD 24-LEAD 7611 prom mi 7641 7641 prom 1024X4 7621 prom 4096X4 lansdale PROM 32x8 PDF

    EMA18

    Abstract: No abstract text available
    Text: % P ro tfn ? V rr-T y KM644002B, KM644002BI C M O SSR A M 1M x 4 Bit with OE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION •• Fast Access Time 10,12,15* • (Max.) - Low Power Dissipation Standby (TTL) : 40« • (Max.) The KM644002B is a 4,194,304-bit high-speed Static Random


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    KM644002B, KM644002BI KM644002B KM644002B- KM6440028- KM644002BJ 32-SOJ-400 KM644002BT 32-TSOP2-4QOF EMA18 PDF