IBM0164405B16M
Abstract: IBM0164405P16M GA15 514300
Text: Discontinued 8/98 - last order; 12/98 last ship IBM0164405B16M x 413/11, 3.3V, EDO. IBM0164405P16M x 413/11, 3.3V, LP, SR, EDO. IBM01644F5B 16M x 8 13/11 Stacked DRAM Features • 16,777,216 word by 4 bit organization by 2 high • Single 3.3 ± 0.3V power supply
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IBM0164405B16M
IBM0164405P16M
IBM01644F5B
576mW
cycles/64ms
GA15
514300
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IBM0164405B16M
Abstract: IBM0164405BJ5B-50 IBM0164405BJ5B-60 IBM0164405P16M
Text: IBM0164405B16M x 413/11, 3.3V, EDO. IBM0164405P16M x 413/11, 3.3V, LP, SR, EDO. IBM0164405B IBM0164405P 16M x 4 13/11 EDO DRAM Features • 16,777,216 word by 4 bit organization • Read-Modify-Write • Single 3.3 ± 0.3V power supply • Performance: • Extended Data Out Hyper Page Mode
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IBM0164405B16M
IBM0164405P16M
IBM0164405B
IBM0164405P
128ms
104ns
IBM0164405BJ5B-50
IBM0164405BJ5B-60
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IBM0164405B16M
Abstract: IBM0164405BJ3C-50 IBM0164405BJ3C-60 IBM0164405P16M TSOP-32 SA14-4237-02
Text: IBM0164405B16M x 413/11, 3.3V, EDO. IBM0164405P16M x 413/11, 3.3V, LP, SR, EDO. IBM0164405B IBM0164405P 16M x 4 13/11 EDO DRAM ADVANCED Features • 16,777,216 word by 4 bit organization • Read-Modify-Write • Single 3.3 ± 0.3V power supply • Performance:
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IBM0164405B16M
IBM0164405P16M
IBM0164405B
IBM0164405P
104ns
IBM0164405BJ3C-50
IBM0164405BJ3C-60
TSOP-32
SA14-4237-02
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IBM0164405B16M
Abstract: IBM0164405BJ5B-50 IBM0164405BJ5B-60 IBM0164405P16M
Text: IBM0164405B16M x 413/11, 3.3V, EDO. IBM0164405P16M x 413/11, 3.3V, LP, SR, EDO. IBM0164405B IBM0164405P 16M x 4 13/11 EDO DRAM Features • 16,777,216 word by 4 bit organization • Read-Modify-Write • Single 3.3 ± 0.3V power supply • Performance: • Extended Data Out Hyper Page Mode
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IBM0164405B16M
IBM0164405P16M
IBM0164405B
IBM0164405P
128ms
104ns
IBM0164405BJ5B-50
IBM0164405BJ5B-60
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IBM0164405B16M
Abstract: IBM0164405BJ3D-50 IBM0164405BJ3D-60 IBM0164405P16M TSOP-32
Text: Discontinued 12/98 - last order; 3/99 last ship IBM0164405B16M x 413/11, 3.3V, EDO. IBM0164405P16M x 413/11, 3.3V, LP, SR, EDO. IBM0164405B IBM0164405P 16M x 4 13/11 EDO DRAM Features • 16,777,216 word by 4 bit organization • Read-Modify-Write • Single 3.3 ± 0.3V power supply
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IBM0164405B16M
IBM0164405P16M
IBM0164405B
IBM0164405P
104ns
IBM0164405BJ3D-50
IBM0164405BJ3D-60
TSOP-32
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PDF
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64mb edo dram simm
Abstract: 8Mb SDRAM 5.0v memory 2mb 72-pin simm simm72 IBM11S43 ram 168 pin 8k refresh simm DIMM 72 pin out edo dram 72-pin simm
Text: Ta ble of C o n te n t s Go To 4Mb DRAM s , V RAMs & SGRAM s Go To 16Mb DRAMs & SDRAMs & 64Mb DRAM s Go To D RAM 72 Pin Mod u l e s Go To D RAM 72 & 144 Pin Small Ou tline Mod u l e s Go To D RAM 168 Pin Mod u l e s Go To Sy n ch ronous SRAM s Go To S RAM Mod u l e s
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2m x 32 SRAM SIMM
Abstract: IBM11M4735CB SIMM 72 IBM0116400M IBM038329P IBM025161L dimm 168
Text: Table of Contents Index Numbering Guides Part Number Type Org A dd r Voltage IBM0116160 IBM0116160B IBM0116160M IBM0116160P IBM0116165 IBM0116165B IBM0116165M IBM0116165P IBM0116400 IBM0116400B IBM0116400M IBM0116400P IBM0116405 IBM0116405B IBM0116405M IBM0116405P
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IBM0116160
IBM0116160B
IBM0116160M
IBM0116160P
IBM0116165
IBM0116165B
IBM0116165M
IBM0116165P
IBM0116400
IBM0116400B
2m x 32 SRAM SIMM
IBM11M4735CB
SIMM 72
IBM0116400M
IBM038329P
IBM025161L
dimm 168
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Untitled
Abstract: No abstract text available
Text: IBM0164405B IBM0164405P 1 6 M x 4 13/11 EDO DRAM Features • 16,777,216 word by 4 bit organization • Single 3.3 ± 0.3V power supply • Read-Modify-Write • Performance: • Extended Data Out | • CAS before RAS Refresh - 4096 cycles/Retention Time • RAS only Refresh
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IBM0164405B
IBM0164405P
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Untitled
Abstract: No abstract text available
Text: IBM0164405B IBM0164405P 16M x 4 13/11 EDO DRAM Features • 16,777,216 word by 4 bit organization Read-Modify-Write • Single 3.3 ± 0.3V power supply Performance: • Extended Data Out Hyper Page Mode CAS before RAS Refresh - 4096 cycles/Retention Time
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OCR Scan
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IBM0164405B
IBM0164405P
128ms
104ns
381mW
00030TE
128ms
115ma
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0164405BJ3C-50
Abstract: No abstract text available
Text: IBM0164405B IBM0164405P ADVANCED 16M x 4 13/11 E D O D R A M Features • 16,777,216 word by 4 bit organization Read-Modity-Write • Single 3.3 ± 0.3V power supply Performance: • Extended Data Out Hyper Page Mode CAS before RAS Refresh - 4096 cycles/Retention Time
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OCR Scan
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IBM0164405B
IBM0164405P
256ms
104ns
306mW
SA14-4237-02
0164405BJ3C-50
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Untitled
Abstract: No abstract text available
Text: IBM0164405B IBM0164405P Preliminary 16M x 4 13/11 EDO DRAM i¡‘.a b rm ta t ¡n w itm 'H iA K ui » K i u n s M X 'i K a B M n Features • 16,777,216 w ord by 4 bit organization • R ead-M odify-W rite • S ingle 3.3 ± 0.3V pow er supply • Perform ance:
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IBM0164405B
IBM0164405P
104ns
IBM0164405P
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PDF
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Untitled
Abstract: No abstract text available
Text: IBM0164405B IBM0164405P 16M x 4 13/11 EDO DRAM Features • 16,777,216 word by 4 bit organization Read-Mod ify-Write • Single 3.3 ± 0.3V power supply Performance: • Extended Data Out CAS before RAS Refresh - 4096 cycles/Retention Time RAS Access Time
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OCR Scan
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IBM0164405B
IBM0164405P
256ms
104ns
360mW
0j-32
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PDF
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Untitled
Abstract: No abstract text available
Text: IBM0164405B IBM0164405P 16M x 4 13/11 EDO DRAM Features • 16,777,216 word by 4 bit organization Read-Modify-Write • Single 3.3 ± 0.3V power supply Performance: -50 • Extended Data Out !W c CAS before RAS Refresh RAS only Refresh - 8192 cycles/Retention Time
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IBM0164405B
IBM0164405P
256ms
104ns
360mW
S0j-32
400milduring
H2007
GA14-4252-01
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PDF
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Untitled
Abstract: No abstract text available
Text: Table of Contents Alphanumeric In d ex . DRAM Numbering . Quality and Reliability. Part Number Oranization . 5 . 7 . 9 Features
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IBM014400.
IBM014400P.
IBM014400M
IBM014400B.
IBM014405.
IBM014405P.
IBM0316809C.
IBM0316169C.
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