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    Kyocera AVX Components KGA15ZS70J104MU

    CAP CER 0.1UF 6.3V X7S 0306
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    DigiKey KGA15ZS70J104MU Reel 8,000 4,000
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    Mini-Circuits MPGA-152-

    IC AMP CATV 30MHZ-1.5GHZ 24MLCP
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    DigiKey MPGA-152- Cut Tape 3,187 1
    • 1 $18.18
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    MPGA-152- Digi-Reel 3,187 1
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    TDK Corporation CD45-B2GA151K-VKA

    CAP CER 150PF 440VAC RADIAL
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    DigiKey CD45-B2GA151K-VKA Cut Tape 1,290 1
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    CD45-B2GA151K-VKA Ammo Pack 1,000 1,000
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    TDK Corporation CS45SL2GA150JYNKA

    CAP CER 15PF 300/440VAC SL
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    DigiKey CS45SL2GA150JYNKA Bulk 612 1
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    TDK Corporation CD45SL2GA150JYNKA

    CAP CER 15PF 440VAC SL RADIAL
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    DigiKey CD45SL2GA150JYNKA Bulk 524 1
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    GA15 Datasheets (7)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    GA150KS61U International Rectifier IGBT INT-A-PAK Low Side Switch Chopper Module Original PDF
    GA150TD120K Unknown Short Circuit Rated Ultra-Fast tm Speed IGBT Original PDF
    GA150TD120U International Rectifier HALF-BRIDGE IGBT DOUBLE INT-A-PAK Original PDF
    GA150TD120U International Rectifier HALF-BRIDGE IGBT DOUBLE INT-A-PAK Original PDF
    GA150TS60U International Rectifier TRANS IGBT MODULE N-CH 600V 150A 11INT-A-PAK Original PDF
    GA150TS60U International Rectifier HALF-BRIDGE IGBT INT-A-PAK Original PDF
    GA15IDDJT22-FR4 GeneSiC Semiconductor Development Boards, Kits, Programmers - Evaluation and Demonstration Boards and Kits - BOARD GATE DRIVER Original PDF

    GA15 Datasheets Context Search

    Catalog Datasheet
    Type
    Document Tags
    PDF

    GA150TD120K

    Abstract: IC171 termal control RG115
    Text: PRELIMINARY GA150TD120K ]HALF-BRODGE” IGBT DOUBLE INT-A -PAK Short Circuit Rated Ultra-FastTM Speed IGBT Features • • VCES=1200V Generation 5 IGBT NPT technology


    Original     		GA150TD120K GA150TD120K IC171 termal control RG115 PDF

    ic 5056 mv 85

    Abstract: GA150TS60U
    Text: PD -5.056 PRELIMINARY "HALF-BRIDGE" IGBT INT-A-PAK GA150TS60U Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses


    Original     		GA150TS60U ic 5056 mv 85 GA150TS60U PDF

    GA150KS61U

    Abstract: ge 142
    Text: PD -94346 GA150KS61U Low Side Switch Chopper Module Ultra-FastTM Speed IGBT IGBT INT-A-PAK Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses


    Original     		GA150KS61U GA150KS61U ge 142 PDF

    irf 44 n

    Abstract: No abstract text available
    Text: GA150TD120U Notes:  Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ‚ See fig. 17 ƒ For screws M5x0.8 „ Pulse width 80µs; single shot. Case Outline — DOUBLE INT-A-PAK Dimensions are shown in millimeters inches WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331


    Original     		GA150TD120U irf 44 n PDF

    LM 1709

    Abstract: GA150TD120U DT12-6
    Text: PD -5.067 PRELIMINARY GA150TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBT Features VCES = 1200 V • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses


    Original     		GA150TD120U 10kHz LM 1709 GA150TD120U DT12-6 PDF

    IQR 336

    Abstract: 5056B IOR 336
    Text: International IQR Rectifier "HALF-BRIDGE" IGBT INT-A-PAK PD - 5.056B GA150TS60U Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology VcES = 600V • UltraFast: Optimized for high operating frequencies 8-40kHz in hard switching, >200kHz in resonant mode


    OCR Scan     		8-40kHz 200kHz GA150TS60U A150TS60U IQR 336 5056B IOR 336 PDF

    GA150TS60U

    Abstract: No abstract text available
    Text: PD -50056C GA150TS60U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses


    Original     		-50056C GA150TS60U GA150TS60U PDF

    Untitled

    Abstract: No abstract text available
    Text: International I R Recti fi Gf PD - 5.067A PR ELIM IN A R Y GA150TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-Fast Speed IGBT Features V • G e n e ratio n 4 IG B T technology ces = 1200V • S tand ard : O p tim ize d for m inim um saturation v o lta g e and o perating freq u en cies up to 1 0 k H z


    OCR Scan     		GA150TD120U PDF

    RG2 DIODE

    Abstract: GA150TD120U DT12-6
    Text: PD - 5.067A PRELIMINARY GA150TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBT Features VCES = 1200V • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses


    Original     		GA150TD120U 10kHz RG2 DIODE GA150TD120U DT12-6 PDF

    Untitled

    Abstract: No abstract text available
    Text: International I R Rectifier PD -5.067 PRELIMINARY GA150TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-Fast Speed IGBT Features V c e s = 1200V • Generation 4 IG B T technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kH z


    OCR Scan     		GA150TD120U PDF

    C82 diode

    Abstract: C81 diode
    Text: International IOR Rectifier PD - 5.067A GA150TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology V CES= 1200V • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz


    OCR Scan     		10kHz GA150TD120U 150TD C82 diode C81 diode PDF

    Untitled

    Abstract: No abstract text available
    Text: HIGH REPEATABILITY ULTRAMINIATURE BROADBAND ATTENUATOR RELAYS SERIES DESIGNATION RELAY TYPE GA152 Attenuator relay series SERIES GA152 DESCRIPTION The Series GA152 highly repeatable ultraminiature attenuator relays are designed for attenuating RF signals in


    Original     		GA152 GA152 50-ohm GA152\102009\Q4 PDF

    ge 142

    Abstract: lta 301 GA150TS60U
    Text: PD - 50056D GA150TS60U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses


    Original     		50056D GA150TS60U ge 142 lta 301 GA150TS60U PDF

    tc 317 c

    Abstract: 056B GA150TS60U
    Text: PD -5.056B PRELIMINARY "HALF-BRIDGE" IGBT INT-A-PAK GA150TS60U Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses


    Original     		GA150TS60U tc 317 c 056B GA150TS60U PDF

    GA152

    Abstract: A152-20-5 A152 TELEDYNE RELAYS esd
    Text: HIGH REPEATABILITY ULTRAMINIATURE BROADBAND ATTENUATOR RELAYS SERIES DESIGNATION RELAY TYPE GA152 Attenuator relay series SERIES GA152 DESCRIPTION The Series GA152 highly repeatable ultraminiature attenuator relays are designed for attenuating RF signals in


    Original     		GA152 GA152 50-ohm GA152\102009\Q4 A152-20-5 A152 TELEDYNE RELAYS esd PDF

    Untitled

    Abstract: No abstract text available
    Text: IBM13V25649AP IBM13V51649AN IBM13V25649AN IBM13V51649AP 256K/512K x 64 SGRAM SO DIMM Features 144 Pin Graphics JEDEC Standard, 8 Byte Synchro­ nous Small Outline Dual-In-line Memory Module Performance: Speed Grade 7R5 ! 10 ! Units I I Clock Frequency 133 ! 100 ! MHz


    OCR Scan     		IBM13V25649AP IBM13V51649AN IBM13V25649AN IBM13V51649AP 256K/512K s5649AP PDF

    Untitled

    Abstract: No abstract text available
    Text: IBM13V25649AN IBM13V51649AN 256K /512K x 64 S G R A M SO DIMM Features • 144 Pin Graphics JEDEC Standard, 8 Byte Syn­ chronous Small Outline Dual-In-line Memory Module • Performance: Speed Grade 7R5 j Clock Frequency 133 j Clock Cycle 7.5 j Clock Access Tim e


    OCR Scan     		IBM13V25649AN IBM13V51649AN /512K PDF

    IRF 860

    Abstract: 5056B IRF 150a
    Text: , I ,• In ternational I I«R Rectifier PD -5.056B preliminary "HALF-BRIDGE" IGBT INT-A-PAK G A 150TS6 0 U Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology V ces = 600V • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200


    OCR Scan     		150TS6 IRF 860 5056B IRF 150a PDF

    pal22V10D

    Abstract: VMEbus Handbook VME P0 COnnector VIC068 TMS320 TMS320C40 VAC068 Cypress VMEbus Interface Handbook VIC068-VAC068 VAC068A disable
    Text: Connecting the Cypress VIC068/VAC068 to the TI TMS320C40: A Prototype Design Introduction The Cypress Semiconductor VIC068 VMEbus Interface Controller and its companion VAC068 VMEbus Address Controller provide a complete VMEbus interface including master and slave capability Reference 2 . As these components can


    Original     		VIC068/VAC068 TMS320C40: VIC068 VAC068 TMS320C40 TMS320C40. pal22V10D VMEbus Handbook VME P0 COnnector TMS320 TMS320C40 Cypress VMEbus Interface Handbook VIC068-VAC068 VAC068A disable PDF

    data circuit schematics satellite connector

    Abstract: 21D17 16D22 18D20 VMEbus Handbook 22D16 TMS320C40GFL VAC068 register TMS320C40 TIB82S105BC
    Text: Prototyping the TI TMS320C40 to the Cypress VIC068/VAC068 Interface Application Report Peter F. Siy and David L. Merriman The MITRE Corporation Timothy V. Blanchard Cypress Semiconductor SPRA105 February 1994 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any


    Original     		TMS320C40 VIC068/VAC068 SPRA105 data circuit schematics satellite connector 21D17 16D22 18D20 VMEbus Handbook 22D16 TMS320C40GFL VAC068 register TIB82S105BC PDF

    Untitled

    Abstract: No abstract text available
    Text: In te r n a tio n a l IQ R R e c tifie r p d p re lim in a ry - s .o bza G A 1 5 0 T D 1 2 0 U "HALF-BRIDGE” IGBT DOUBLE INT-A-PAK Ultra-Fast Speed IGBT Fe at ur es V • G en eratio n 4 IG BT te ch n o lo g y • S tan dard : O p tim ize d for m inim um saturation


    OCR Scan     		10kHz PDF

    DQ45-A

    Abstract: 033J1
    Text: IBM13N1649NC IBM13N1809NC 1M x 64/80 1 Bank Unbuffered SDRAM Module Features • 168-Pin JEDEC Standard, Unbuffered 8-Byte Dual In-Line Memory Module • 1Mx64/80 Synchronous DRAM DIMM • Performance: i. CAS Latency : fcK I Clock Frequency itcK i Clock Cycle


    OCR Scan     		IBM13N1649NC IBM13N1809NC 168-Pin 1Mx64/80 DQ45-A 033J1 PDF

    IBM0164405B16M

    Abstract: IBM0164405P16M GA15 514300
    Text: Discontinued 8/98 - last order; 12/98 last ship IBM0164405B16M x 413/11, 3.3V, EDO. IBM0164405P16M x 413/11, 3.3V, LP, SR, EDO. IBM01644F5B 16M x 8 13/11 Stacked DRAM Features • 16,777,216 word by 4 bit organization by 2 high • Single 3.3 ± 0.3V power supply


    Original     		IBM0164405B16M IBM0164405P16M IBM01644F5B 576mW cycles/64ms GA15 514300 PDF

    68HC11F1 bootloader

    Abstract: 68HC11F1 expanded 68hc11f1 boot 68hc11f1 MC68HC11F1CPU4 IC stk 412 - 410 MC68HC11F1CFN3R2 Motorola 68HC11F1 ic stk 412 -420 68hc11e
    Text: HC11 MC68HC11F1 Technical Data Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and


    Original     		MC68HC11F1 otheHC11F1VPU4 MC68L11F1CFN3 MC68L11F1CPU3 LQFP80 68HC11F1 bootloader 68HC11F1 expanded 68hc11f1 boot 68hc11f1 MC68HC11F1CPU4 IC stk 412 - 410 MC68HC11F1CFN3R2 Motorola 68HC11F1 ic stk 412 -420 68hc11e PDF