RCA 40310
Abstract: No abstract text available
Text: Hometaxial-Base n-p-n Type Selection Charts *FE V C E O sus V C E V (sus) V v •c A V V CE V Temp.—°C V 25 IC A •B A JEDEC TO-39/TO-205M or TO-5/TO-205MA Package T 40 40 40 40 55 55 55 65 140 E CB V £2/40349 FAMILY (n-p-n) Medium Power f = 1.4 MHz typ; P j = 5 W max (2N1482); P j = 8.75 W max (40349)
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2N1482)
O-39/TO-205M
O-5/TO-205MA
2N1479*
2N1481*
2N1700
2N1480*
2N1482*
92CS-24062R4
RCA 40310
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Wire-wound Chip Inductors LB series LB3218T470K Features Item Summary 47 H(±10%), 205mA, 1207 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions 1207/3218
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LB3218T470K
205mA,
2000pcs
52MHz
205mA
12MHz
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p52 sot89
Abstract: marking p52 SOT23-6 design ideas TS16949 ZVN4525Z ZVP4525Z ZVP4525ZTA ZVP4525ZTC complementary MOSFET sot89 p-channel mosfet sot89 5V
Text: ZVP4525Z 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=-250V; RDS(ON)=14 ; ID=-205mA DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced
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ZVP4525Z
-250V;
-205mA
OT223
OT23-6
ZVN4525Z
D-81673
p52 sot89
marking p52 SOT23-6
design ideas
TS16949
ZVN4525Z
ZVP4525Z
ZVP4525ZTA
ZVP4525ZTC
complementary MOSFET sot89
p-channel mosfet sot89 5V
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CBL2012T100M Features Item Summary 10 H(±20%), 205mA, 370mA, 0805 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 4000pcs Products characteristics table External Dimensions
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CBL2012T100M
205mA,
370mA,
4000pcs
205mA
370mA
32MHz
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40372 RCA
Abstract: RCA 40310 RCA 40312 40911 40367 2N1479 RCA 40316 40349 rca 40372
Text: Hometaxial-Base n-p-n Type Selection Charts *FE V C E O sus V C E V (sus) V v •c A V V CE V Temp.—°C V 25 IC A •B A JEDEC TO-39/TO-205M or TO-5/TO-205MA Package T 40 40 40 40 55 55 55 65 140 E CB V £2/40349 FAMILY (n-p-n) Medium Power f = 1.4 MHz typ; P j = 5 W max (2N1482); P j = 8.75 W max (40349)
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Original
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2N1482)
O-39/TO-205M
O-5/TO-205MA
2N1479*
2N1481*
2N1700
2N1480*
2N1482*
2N1482
2N1486
40372 RCA
RCA 40310
RCA 40312
40911
40367
2N1479
RCA 40316
40349
rca 40372
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PDF
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Untitled
Abstract: No abstract text available
Text: 3757 W. Touhy Ave., Lincolnwood, IL 60712 847 675-1760 • (847) 673-2850 · www.illcap.com +85°C Motor Run Capacitors radial leaded box Part Number: 205MABA01KH# This part is RoHS compliant Electrical Specifications Capacitance: 2uF Tolerance: -10 %,+10 %
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205MABA01KH#
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Untitled
Abstract: No abstract text available
Text: ZVP4525Z 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=-250V; RDS(ON)=14 ; ID=-205mA DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced
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Original
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ZVP4525Z
-250V;
-205mA
OT223
OT23-6
ZVN4525Z
D-81673
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PDF
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Untitled
Abstract: No abstract text available
Text: Hometaxial-Base n-p-n Type Selection Charts *FE V C E O sus V C E V (sus) V v •c A V V CE V Temp.—°C V 25 IC A •B A JEDEC TO-39/TO-205M or TO-5/TO-205MA Package T 40 40 40 40 55 55 55 65 140 E CB V £2/40349 FAMILY (n-p-n) Medium Power f = 1.4 MHz typ; P j = 5 W max (2N1482); P j = 8.75 W max (40349)
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Original
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2N1482)
O-39/TO-205M
O-5/TO-205MA
2N1479*
2N1481*
2N1700
2N1480*
2N1482*
01METERS
92CS-20225
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7273B
Abstract: No abstract text available
Text: SSRAM AS5SS256K18 256K x 18 SSRAM PIN ASSIGNMENT Top View Synchronous Burst SRAM, Flow-Through 100-pin TQFP SA SA CE\ CE2 NC NC bwB\ BWa\ CE2\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ SA SA FEATURES VDD NC VSS DQb DQb VDDQ VSS DQb DQb DQPb NC VSS VDDQ NC
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AS5SS256K18
375mA
225mA
325mA
205mA
250mA
185mA
120mA
AS5SS256K18
7273B
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PDF
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Untitled
Abstract: No abstract text available
Text: SZA-3044 Z SZA-3044(Z) 2.7GHz to 3.8GHz 5V 1W 2.7GHz to 3.8GHz 5V 1W POWER AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: QFN, 4mmx4mm Product Description Features RFMD’s SZA-3044 is a high linearity class AB Heterojunction Bipolar Transistor
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SZA-3044
EDS-103989
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TOP210
Abstract: PM130-H1A TOP210 schematic SWITCHING REGULATOR CONTROL CIRCUIT FOR 500 kHz O PM130-H1 schematic diagram of PM130-H1A PM130-R1 flyback transformer pin configuration TOP221 Physical Transformer
Text: TABLE 1: ELECTRICAL SPECIFICATIONS AT 25 OC FIGURE 1: SCHEMATIC DIAGRAM SWITCHING TRANSFORMER DESIGNED FOR USE WITH POWER INTEGRATIONS PWR-TOP210PFI OR TOP221P REFER TO APPLICATION CIRCUITS OF FIGURE 4. PARAMETER MIN. PRIMARY INDUCTANCE 4-2 VOLTAGE = 0.250Vrms
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PWR-TOP210PFI
OP221P
250Vrms
500VDC
MURS160T3
OP221
OP210
MMBZ5240BLT1
BAS16W
TOP210
PM130-H1A
TOP210 schematic
SWITCHING REGULATOR CONTROL CIRCUIT FOR 500 kHz O
PM130-H1
schematic diagram of PM130-H1A
PM130-R1
flyback transformer pin configuration
TOP221
Physical Transformer
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PDF
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2SD2155
Abstract: 2SB1429 55NO
Text: 2SB1429 * < 4 • mm 205MAX. • « it m -r r , • 2 S D 2 1 5 5 ¿ 3 ' y - f > > y 9 'J K .t£ * l i * » • 100W : vC EO - - i 8 o v a * * ) 7 r A * - 7 r .f * T iX S tt (T.-2S1C ) a C o a w ? * • *< - * M * i£ «Í ff * «L * vCBO -180 V VCEO -180
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2SB1429
2SD2155
Tc-25t
20SUAX.
55-no.
2SD2155
2SB1429
55NO
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Untitled
Abstract: No abstract text available
Text: CMOS SRAM KM684002B, KM684002BI 512Kx8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 10,12,15ns Max. • Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : 10mA(Max.) Operating KM684Q02B - 1 0 :210mA(Max.) KM684002B -12 : 205mA(Max.)
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KM684002B,
KM684002BI
512Kx8
KM684Q02B
210mA
KM684002B
205mA
200mA
KM684002BJ
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PDF
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Untitled
Abstract: No abstract text available
Text: PART NUMBER: 205MABA01KJ# M O TO R RUN CAPACITORS RADIAL LEADED BOX P a rts a re R oH S c o m p lia n t D a te c o d e w h e n p a rts b e c a m e RoHS: 14 ELECTRICAL SPECIFICATIONS C apacitance: 2 uF T ole ra n ce: -10 % . +10 % Dissipation Factor: 0.0006 Max at 1000 Hz and 25°C
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205MABA01KJ#
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100181
Abstract: No abstract text available
Text: P h ilip s C o m p o n e n t s - S ig n e t ic s 100181 Docum ent No. 8 5 3-1442 E C N No. 99800 Date of Issue Ju ne 14, 1990 Status Product Specification 4—Bit Binary/BCD ALU E C L Products FEATURES •Typical propagation delay: 2.10ns •Typical supply current —lEE : 205mA
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205mA
100181
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PDF
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2sa1553
Abstract: TOSHIBA 2SA1553
Text: TOSHIBA Discrete Semiconductors 2SA1553 Transistor Unit in mm 205MAX Silicon PNP Epitaxial Type PCT Process #3-3 ±0.2 For General Purpose Switching and Amplifier Applications Features • Complementary to 2SC4029 • Recommended for 120W High Fidelity Audio Frequency Amplifier
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2SA1553
205MAX
2SC4029
00215b0
2sa1553
TOSHIBA 2SA1553
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PDF
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Untitled
Abstract: No abstract text available
Text: PART NUMBER: 205MABA03KH# M O TO R RUN CAPACITORS RADIAL LEADED BOX P a rts a re R oH S c o m p lia n t D a te c o d e w h e n p a rts b e c a m e RoHS: 14 ELECTRICAL SPECIFICATIONS C apacitance: 2 uF T ole ra n ce: -10 % . +10 % Dissipation Factor: 0.0006 Max at 1000 Hz and 25°C
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205MABA03KH#
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PDF
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Untitled
Abstract: No abstract text available
Text: Philips Components-Signetics 100180 Docum ent No. 853-0633 ECN No. 99800 Date of Issue June 14, 1990 Status Product Specification High Speed 8-B it Adder ECL Products FEATURES •Typical propagation delay: 2.35ns PIN DESCRIPTION PINS •Typical supply current {—lEE : 205mA
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205mA
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PDF
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Untitled
Abstract: No abstract text available
Text: PART NUMBER: 205MABA05KJ# M O TO R RUN CAPACITORS RADIAL LEADED BOX P a rts a re R oH S c o m p lia n t D a te c o d e w h e n p a rts b e c a m e RoHS: 14 ELECTRICAL SPECIFICATIONS C apacitance: 2 uF T ole ra n ce: -10 % . +10 % Dissipation Factor: 0.0006 Max at 1000 Hz and 25°C
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205MABA05KJ#
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PDF
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Untitled
Abstract: No abstract text available
Text: PART NUMBER: 205MABA01KH# M O TO R RUN CAPACITORS RADIAL LEADED BOX P a rts a re R oH S c o m p lia n t D a te c o d e w h e n p a rts b e c a m e RoHS: 14 ELECTRICAL SPECIFICATIONS C apacitance: 2 uF T ole ra n ce: -10 % . +10 % Dissipation Factor: 0.0006 Max at 1000 Hz and 25°C
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205MABA01KH#
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PDF
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Untitled
Abstract: No abstract text available
Text: PART NUMBER: 205MABA02KI# M O TO R RUN CAPACITORS RADIAL LEADED BOX P a rts a re R oH S c o m p lia n t D a te c o d e w h e n p a rts b e c a m e RoHS: 14 ELECTRICAL SPECIFICATIONS C apacitance: 2 uF T ole ra n ce: -10 % . +10 % Dissipation Factor: 0.0006 Max at 1000 Hz and 25°C
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205MABA02KI#
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PDF
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Untitled
Abstract: No abstract text available
Text: PART NUMBER: 205MABA02KH# M O TO R RUN CAPACITORS RADIAL LEADED BOX P a rts a re R oH S c o m p lia n t D a te c o d e w h e n p a rts b e c a m e RoHS: 14 ELECTRICAL SPECIFICATIONS C apacitance: 2 uF T ole ra n ce: -10 % . +10 % Dissipation Factor: 0.0006 Max at 1000 Hz and 25°C
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205MABA02KH#
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PDF
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Untitled
Abstract: No abstract text available
Text: PART NUMBER: 205MABA04KG# M O TO R RUN CAPACITORS RADIAL LEADED BOX P a rts a re R oH S c o m p lia n t D a te c o d e w h e n p a rts b e c a m e RoHS: 14 ELECTRICAL SPECIFICATIONS C apacitance: 2 uF T ole ra n ce: -10 % . +10 % Dissipation Factor: 0.0006 Max at 1000 Hz and 25°C
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205MABA04KG#
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Untitled
Abstract: No abstract text available
Text: HN62321E Series 1M 128K x 8-bit Mask ROM • DESCRIPTION The Hitachi HN62321E Series is a 1-Megabit CMOS Mask Programmable Read Only Memory organized as 131,072 x 8-bit. The low power consumption of this device makes it ideal for battery powered, portable systems. In addition, the high speed
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HN62321E
28-pin
28-lead
100mW
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