Untitled
Abstract: No abstract text available
Text: Ordering number : ENA2196 NGTB20N60L2TF1G N-Channel IGBT http://onsemi.com 600V, 20A, VCE sat ;1.45V TO-3PF-3L with Low VF Switching Diode Features • IGBT VCE(sat)=1.45V typ. (IC=20A, VGE=15V) • IGBT tf=67ns typ. • Diode VF=1.5V typ. (IF=20A) • Diode trr=70ns typ.
|
Original
|
ENA2196
NGTB20N60L2TF1G
A2196-8/8
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FGP20N60UFD tm 600V, 20A Field Stop IGBT Features General Description • High current capability • Low saturation voltage: VCE sat =1.8V @ IC = 20A • High input impedance • Fast switching Using Novel Field Stop IGBT Technology, Fairchild’s new series
|
Original
|
FGP20N60UFD
O-220
FGP20N60UFD
|
PDF
|
G20N50c
Abstract: g20n50c1d g20n50 g20N50c1 HGTG20N50 HGTG20N50C1D 20A igbt IGBT Drivers Transistors ACT10 AN7254
Text: HGTG20N50C1D 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A, 500V JEDEC STYLE TO-247 EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time < 500ns GATE COLLECTOR BOTTOM SIDE METAL • High Input Impedance
|
Original
|
HGTG20N50C1D
O-247
500ns
150oC.
G20N50c
g20n50c1d
g20n50
g20N50c1
HGTG20N50
HGTG20N50C1D
20A igbt
IGBT Drivers Transistors
ACT10
AN7254
|
PDF
|
FGA20N120FTD
Abstract: No abstract text available
Text: FGA20N120FTD tm 1200V, 20A Trench IGBT Features • Field stop trench technology • High speed switching • Low saturation voltage: VCE sat =1.6V @ IC = 20A • High input impedance • RoHS compliant General Description Using advanced field stop trench technology, Fairchild’s 1200V
|
Original
|
FGA20N120FTD
FGA20N120FTD
|
PDF
|
G20N50c
Abstract: g20n50c1d g20n50 50E1D 50C1D G20N40C1D G20N50E1D g20n50c1 HGTH20N50C1D HGTH20N40C1D
Text: HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, HGTH20N50E1D 20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 20A, 400V and 500V JEDEC TO-218AC • VCE ON 2.5V Max. EMITTER COLLECTOR (FLANGE) • TFALL 1µs, 0.5µs
|
Original
|
HGTH20N40C1D,
HGTH20N40E1D,
HGTH20N50C1D,
HGTH20N50E1D
O-218AC
HGTH20N50E1D
G20N50c
g20n50c1d
g20n50
50E1D
50C1D
G20N40C1D
G20N50E1D
g20n50c1
HGTH20N50C1D
HGTH20N40C1D
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Ordering number : ENA2202 NGTG20N60L2TF1G N-Channel IGBT http://onsemi.com 600V, 20A, VCE sat ;1.45V Single TO-3PF-3L Features • IGBT VCE(sat)=1.45V typ. (IC=20A, VGE=15V) • IGBT tf=67ns typ. • Enhansment type • Adaption of full isolation type package
|
Original
|
ENA2202
NGTG20N60L2TF1G
A2202-7/7
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FGH20N60SFD tm 600V, 20A Field Stop IGBT Features General Description • High current capability • Low saturation voltage: VCE sat =2.2V @ IC = 20A • High input impedance Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Induction
|
Original
|
FGH20N60SFD
FGH20N60SFD
|
PDF
|
RGTH40TS65D
Abstract: No abstract text available
Text: RGTH40TS65D Data Sheet 650V 20A Field Stop Trench IGBT lOutline VCES 650V IC 100°C 20A VCE(sat) (Typ.) 1.6V PD 144W lFeatures TO-247 (1)(2)(3) lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) High Speed Switching
|
Original
|
RGTH40TS65D
O-247
RGTH40TS65Dth
R1102A
RGTH40TS65D
|
PDF
|
equivalent MP6752
Abstract: MP6752 PW03020796 P channel 600v 20a IGBT
Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MP6752 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • 6 IGBTs are built into 1 package • High speed: tf = 0.35µs Max. (IC = 20A) trr = 0.15µs (Max.) (IC = 20A)
|
Original
|
MP6752
PW03020796
equivalent MP6752
MP6752
PW03020796
P channel 600v 20a IGBT
|
PDF
|
RGT40TS65D
Abstract: No abstract text available
Text: RGT40TS65D Data Sheet 650V 20A Field Stop Trench IGBT lOutline VCES 650V IC 100°C 20A VCE(sat) (Typ.) 1.65V PD 144W lFeatures TO-247 (1)(2)(3) lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) Low Switching Loss
|
Original
|
RGT40TS65D
O-247
R1102A
RGT40TS65D
|
PDF
|
RGT40TS65D
Abstract: No abstract text available
Text: RGT40TS65D Data Sheet 650V 20A Field Stop Trench IGBT lOutline VCES 650V IC 100°C 20A VCE(sat) (Typ.) 1.65V PD 144W lFeatures TO-247N (1)(2)(3) lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) Low Switching Loss
|
Original
|
RGT40TS65D
O-247N
R1102A
RGT40TS65D
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RGTH40TS65 Data Sheet 650V 20A Field Stop Trench IGBT lOutline VCES 650V IC 100°C 20A VCE(sat) (Typ.) 1.6V PD 144W TO-247N (1)(2)(3) lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) High Speed Switching
|
Original
|
RGTH40TS65
O-247N
R1102A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RGTH40TS65D Data Sheet 650V 20A Field Stop Trench IGBT lOutline VCES 650V IC 100°C 20A VCE(sat) (Typ.) 1.6V PD 144W lFeatures TO-247N (1)(2)(3) lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) High Speed Switching
|
Original
|
RGTH40TS65D
O-247N
RGTH40TS65th
R1102A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RGTH40TS65 Data Sheet 650V 20A Field Stop Trench IGBT lOutline VCES 650V IC 100°C 20A VCE(sat) (Typ.) 1.6V PD 144W TO-247 (1)(2)(3) lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) High Speed Switching
|
Original
|
RGTH40TS65
O-247
R1102A
|
PDF
|
|
|
GP19NC60S
Abstract: JESD97 STGP19NC60S
Text: STGP19NC60S N-channel 600V - 20A - TO-220 Medium frequency PowerMESH IGBT Features Type VCES STGP19NC60S 600V VCE sat (typ)@150°C IC @100°C < 1.35V 20A • Very low on-voltage drop (VCE(sat) ■ High input impedance (voltage driven) ■ IGBT co-packaged with ultrafast freewheeling
|
Original
|
STGP19NC60S
O-220
GP19NC60S
JESD97
STGP19NC60S
|
PDF
|
G20N50c
Abstract: g20n50c1d g20n50 g20N50c1 G20N40 igbt 400V 20A "Power Diode" 500V 20A power Diode 400V 20A G20N50E1D HGTH20N50E1D
Text: S E M I C O N D U C T O R HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, HGTH20N50E1D 20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 20A, 400V and 500V JEDEC TO-218AC • VCE ON 2.5V Max. EMITTER COLLECTOR
|
Original
|
HGTH20N40C1D,
HGTH20N40E1D,
HGTH20N50C1D,
HGTH20N50E1D
O-218AC
HGTH20N50E1D
150oC
G20N50c
g20n50c1d
g20n50
g20N50c1
G20N40
igbt 400V 20A
"Power Diode" 500V 20A
power Diode 400V 20A
G20N50E1D
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RGT40NS65D Data Sheet 650V 20A Field Stop Trench IGBT lOutline VCES 650V IC 100°C 20A VCE(sat) (Typ.) 1.65V PD 161W lFeatures LPDS (TO-263S) (2) (1) (3) lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) Low Switching Loss
|
Original
|
RGT40NS65D
O-263S)
R1102A
|
PDF
|
GP19NC60SD
Abstract: JESD97 STGP19NC60SD
Text: STGP19NC60SD N-channel 600V - 20A - TO-220 Medium frequency PowerMESH IGBT Features Type VCES STGP19NC60SD 600V VCE sat (typ)@150°C IC @100°C < 1.35V 20A • Very low on-voltage drop (VCE(sat) ■ High input impedance (voltage driven) ■ IGBT co-packaged with ultrafast freewheeling
|
Original
|
STGP19NC60SD
O-220
GP19NC60SD
JESD97
STGP19NC60SD
|
PDF
|
G20N50c
Abstract: g20n50c1d mosfet 20a 300v g20n50 ic tb 810 datasheet HGTG20N50C1D g20N50c1 HGTG20N50 20A igbt an7254
Text: HGTG20N50C1D S E M I C O N D U C T O R 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A, 500V JEDEC STYLE TO-247 EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time < 500ns GATE COLLECTOR BOTTOM SIDE
|
Original
|
HGTG20N50C1D
O-247
500ns
150oC.
AN7254
AN7260)
150oC
100oC
G20N50c
g20n50c1d
mosfet 20a 300v
g20n50
ic tb 810 datasheet
HGTG20N50C1D
g20N50c1
HGTG20N50
20A igbt
|
PDF
|
IGBT CM20MD-12H
Abstract: CM20MD-12H E80276
Text: MITSUBISHI IGBT MODULES CM20MD-12H MEDIUM POWER SWITCHING USE INSULATED TYPE CM20MD-12H ¡IC . 20A ¡VCES . 600V ¡Insulated Type
|
Original
|
CM20MD-12H
E80276
E80271
IGBT CM20MD-12H
CM20MD-12H
E80276
|
PDF
|
n channel 600v 20a IGBT
Abstract: P3060 equivalent MP6752
Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MP6752 GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • 6 IGBTs are built into 1 package • High speed: tf = 0.35|as Max. (Ic = 20A) t rr = 0.15|as (Max.) (Ic = 20A)
|
OCR Scan
|
MP6752
PW03020796
n channel 600v 20a IGBT
P3060
equivalent MP6752
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MP6752 GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • 6 IGBTs are built into 1 package • High speed: tf = 0.35ps Max. (Ic = 20A) trr= 0 .1 5 ms (Max.) (Ic = 20A)
|
OCR Scan
|
MP6752
PW03020796
|
PDF
|
PJ 969 diode
Abstract: G20N50c 20N50C1D pj 986 diode F25 transistor mosfet 20n GE 639 pj 809 IGBT 500V 35A igbt 20A 500V
Text: HGTG20N50C1D M o r r is 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A ,500V JEDEC STYLE TO-247 • Latch Free Operation • Typical Fall Time < 500ns • High Input Im pedance • Low Conduction Loss • With Anti-Parallel Diode
|
OCR Scan
|
500ns
HGTG20N50C1D
O-247
AN7254
AN7260)
PJ 969 diode
G20N50c
20N50C1D
pj 986 diode
F25 transistor
mosfet 20n
GE 639
pj 809
IGBT 500V 35A
igbt 20A 500V
|
PDF
|
HGTM20N50
Abstract: HGTM20N
Text: 3 HARRIS S E M I C O N D U C T O R HGTH20N40C1, 40E1, 50C1, 50E1 HGTM20N40C1, 40E1, 50C1, 50E1 HGTP15N40C1, 40E1, 50C1, 50E1 15A, 20A, 400V and 500V N-Channel IGBTs December 1993 Packages Features • HGTH-TYPES JEDEC TO-218AC TOP VIEW 15A and 20A, 400V and 500V
|
OCR Scan
|
HGTH20N40C1,
HGTM20N40C1,
HGTP15N40C1,
O-218AC
O-220AB
O-204AA
HGTH20N40E1,
HGTH20N50C1,
HGTH20N50E1,
HGTM20N50
HGTM20N
|
PDF
|
