20N1 Search Results

20N1 Result Highlights (5)

Part	Manufacturer	Description
ADUM120N1BRZ	Analog Devices	2ch EMC robust 3kV digital Iso
ADUM120N1WBRZ-RL7	Analog Devices	2ch EMC robust 3kV digital Iso
ADUM220N1BRWZ-RL	Analog Devices	IC, Robust Dual ISO, 2:0 chann
ADUM220N1BRWZ	Analog Devices	IC, Robust Dual ISO, 2:0 chann
ADUM120N1WBRZ	Analog Devices	2ch EMC robust 3kV digital Iso

20N1 Price and Stock

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Torex Semiconductor LTD XC6120N152NR-G IC SUPERVISOR 1 CHANNEL SSOT24
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	XC6120N152NR-G	Cut Tape	147,485		1	1 $0.79 10 $0.487 100 $0.3153 1000 $0.21974 10000 $0.21974	Buy Now
	XC6120N152NR-G	Digi-Reel	147,485		1	1 $0.79 10 $0.487 100 $0.3153 1000 $0.21974 10000 $0.21974	Buy Now
	XC6120N152NR-G	Reel	138,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.19086	Buy Now
Newark	XC6120N152NR-G	Cut Tape	215		5	1 $0.51 10 $0.409 100 $0.409 1000 $0.409 10000 $0.409	Buy Now
Avnet Silica	XC6120N152NR-G		6,000	9 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	XC6120N152NR-G		6,000		1	1 - 10 - 100 - 1000 - 10000 $0.2067	Buy Now
Infineon Technologies AG IPB120N10S405ATMA1 MOSFET N-CH 100V 120A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPB120N10S405ATMA1	Digi-Reel	13,405		1	1 $3.18 10 $2.189 100 $3.18 1000 $1.33136 10000 $1.33136	Buy Now
	IPB120N10S405ATMA1	Cut Tape	13,405		1	1 $3.18 10 $2.189 100 $3.18 1000 $1.33136 10000 $1.33136	Buy Now
	IPB120N10S405ATMA1	Reel	11,000		1,000	1 - 10 - 100 - 1000 $1.323 10000 $1.323	Buy Now
Newark	IPB120N10S405ATMA1	Cut Tape	20,116		1	1 $2.83 10 $2.83 100 $2.83 1000 $2.83 10000 $2.83	Buy Now
Rochester Electronics	IPB120N10S405ATMA1		438		1	1 $1.54 10 $1.54 100 $1.45 1000 $1.31 10000 $1.31	Buy Now
EBV Elektronik	IPB120N10S405ATMA1		1,000	13 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	IPB120N10S405ATMA1		1,000		1	1 - 10 - 100 - 1000 $2.19 10000 $2.19	Buy Now
onsemi FDB120N10 MOSFET N-CH 100V 74A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FDB120N10	Cut Tape	433		1	1 $3.35 10 $2.308 100 $3.35 1000 $3.35 10000 $3.35	Buy Now
	FDB120N10	Digi-Reel	433		1	1 $3.35 10 $2.308 100 $3.35 1000 $3.35 10000 $3.35	Buy Now
Richardson RFPD	FDB120N10				800	1 - 10 - 100 - 1000 $1.41 10000 $1.41	Buy Now
Avnet Asia	FDB120N10			22 Weeks	800	1 - 10 - 100 - 1000 $1.48776 10000 $1.39593	Buy Now
Avnet Silica	FDB120N10			23 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Littelfuse Inc IXFK220N17T2 MOSFET N-CH 170V 220A TO264AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFK220N17T2	Tube	351		1	1 $10.97 10 $10.97 100 $8.226 1000 $8.226 10000 $8.226	Buy Now
Littelfuse Inc IXFX420N10T MOSFET N-CH 100V 420A PLUS247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFX420N10T	Tube	289		1	1 $18.31 10 $18.31 100 $12.08767 1000 $18.31 10000 $18.31	Buy Now

Find more 20N1 price and stock on Findchips.com

20N1 Datasheets (5)

Part	Manufacturer	Description	Datasheet Type	PDF
20N10	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
20N100	Unknown	Shortform Semicon, Diode, and SCR Datasheets	Short Form	PDF
20N100D2	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
20N100E2	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
20N120E2	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF

20N1 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IC IGBT 20N120 Abstract: 20n120 20N120 IGBT ixys ixdh 20n120 IXDH20N120D1 20N120D1 Text: IXDH 20N120 VCES = 1200 V = 38 A IXDH 20N120 D1 IC25 VCE sat typ = 2.4 V High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA C C G TO-247 AD G G C E IXDH 20N120 Symbol Conditions VCES TJ = 25°C to 150°C IXDH 20N120 D1 Maximum Ratings	Original	PDF	20N120 20N120 O-247 IXDH20N120D1 IC IGBT 20N120 20N120 IGBT ixys ixdh 20n120 IXDH20N120D1 20N120D1
Untitled Abstract: No abstract text available Text: IXGH 20N100 IXGT 20N100 IGBT VCES IC25 VCE sat tfi(typ) = 1000 V = 40 A = 3.0 V = 280 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient	Original	PDF	20N100 O-247 O-268
20N100 Abstract: No abstract text available Text: IGBT IXGA 20N100 VCES IXGP 20N100 IC25 VCE sat = 1000 V = 40 A = 3.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30	Original	PDF	20N100 O-220AB O-263 728B1
20n120 Abstract: induction heating cooker igbt induction cooker siemens igbt 20A 20N120BD1 induction cooker application notes Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGP 20N120B IXGP 20N120BD1 = 1200 = 40 = 3.4 = 160 tfi(typ) Preliminary Data Sheet V A V ns D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	PDF	20N120B 20N120BD1 IC110 O-220 6A/DSEC16-06A 20n120 induction heating cooker igbt induction cooker siemens igbt 20A 20N120BD1 induction cooker application notes
IC IGBT 20N120 Abstract: IXDH20N120AU1 ixdh20n120au 20N120 Text: IXDA 20N120 AS VCES = 1200 V = 34 A IC25 VCE sat typ = 2.8 V High Voltage IGBT Short Circuit SOA Capability Square RBSOA C Preliminary Data TO-263 AB G G E E Symbol Conditions VCES TJ = 25°C to 150°C Maximum Ratings 1200 VCGR TJ = 25°C to 150°C; RGE = 20 kW	Original	PDF	20N120 O-263 IXDH20N120AU1 IC IGBT 20N120 IXDH20N120AU1 ixdh20n120au
MDD25 Abstract: 255-16N1 MDD255 ixys MCC 700 Text: MDD 255 High Power Diode Modules IFRMS = 2x450 A IFAVM = 2x270 A VRRM = 1200-2200 V 3 VRSM V VRRM V Type 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 MDD MDD MDD MDD MDD MDD 2 3 2 255-12N1 255-14N1 255-16N1 255-18N1 255-20N1 255-22N1 Symbol	Original	PDF	2x450 2x270 255-12N1 255-14N1 255-16N1 255-18N1 255-20N1 255-22N1 10Transient 20100203a MDD25 255-16N1 MDD255 ixys MCC 700
T1125 Abstract: No abstract text available Text: MDO 500 IFRMS = 880 A IFAVM = 560 A VRRM = 1200-2200 V High Power Diode Modules VRSM VDSM VRRM VDRM V V 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 Symbol 3 2 2 MDO 500-12N1 MDO 500-14N1 MDO 500-16N1 MDO 500-18N1 MDO 500-20N1 MDO 500-22N1 Test Conditions	Original	PDF	500-12N1 500-14N1 500-16N1 500-18N1 500-20N1 500-22N1 T1125
2x520 Abstract: No abstract text available Text: MDD 312 IFRMS = 2x 520 A IFAVM = 2x 310 A VRRM = 1200-2200 V High Power Diode Modules VRRM VDRM V V 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 Type 3 MDD 312-12N1 MDD 312-14N1 MDD 312-16N1 MDD 312-18N1 MDD 312-20N1 MDD 312-22N1 Test Conditions	Original	PDF	312-12N1 312-14N1 312-16N1 312-18N1 312-20N1 312-22N1 2x520
20N15 Abstract: No abstract text available Text: Capacitive proximity sensors CFDM 20N1500/S35L Capacitive proximity sensors dimension drawing 20 35 9 3,5 22 10 12 4xLED M8 x 1 6 13 8,9 general data photo mounting type shielded nominal sensing distance Sn 5 mm temperature drift ± 15 % +10 . +70 °C	Original	PDF	20N1500/S35L 20N15
Untitled Abstract: No abstract text available Text: Inductive sensors IFFM 20N1501/S35L Inductive proximity switch dimension drawing 20 32 7 9 3,5 19 10 10 4xLED 13 M8 x 1 general data photo mounting type shielded nominal sensing distance Sn 5 mm hysteresis 3 . 20 % of Sr output indicator 4 port LED red	Original	PDF	20N1501/S35L
Untitled Abstract: No abstract text available Text: Inductive sensors IFFM 20N1501/S35L Inductive proximity switch dimension drawing 20 32 7 9 3,5 19 10 10 4xLED 13 M8 x 1 general data photo mounting type shielded nominal sensing distance Sn 5 mm hysteresis 3 . 20 % of Sr output indicator 4 port LED red	Original	PDF	20N1501/S35L
Untitled Abstract: No abstract text available Text: Inductive sensors IFFM 20N1501/S35L Inductive proximity switch dimension drawing 20 32 7 9 3,5 19 10 10 4xLED 13 M8 x 1 general data photo mounting type shielded nominal sensing distance Sn 5 mm hysteresis 3 . 20 % of Sr output indicator 4 port LED red	Original	PDF	20N1501/S35L
Untitled Abstract: No abstract text available Text: Inductive sensors IFFM 20N1501/S35L Inductive proximity switch dimension drawing 20 32 7 9 3,5 19 10 10 4xLED 13 M8 x 1 general data photo mounting type shielded nominal sensing distance Sn 5 mm hysteresis 3 . 20 % of Sr output indicator 4 port LED red	Original	PDF	20N1501/S35L
Untitled Abstract: No abstract text available Text: Inductive sensors IFFM 20N17A3/S35L Inductive proximity switch dimension drawing 10 LED 32 7 7 19 3,5 10 20 M8 x 1 13 general data photo mounting type shielded nominal sensing distance Sn 8 mm hysteresis 3 . 20 % of Sr output indicator LED red electrical data	Original	PDF	20N17A3/S35L

Untitled Abstract: No abstract text available Text: Advanced Technical Data High Voltage IGBT IXGH 20N120B VCES IXGT 20N120B IC25 VCE sat = 1200 = 40 = 3.4 = 160 tfi(typ) Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient	Original	PDF	20N120B O-268 O-247 728B1 123B1 065B1
Untitled Abstract: No abstract text available Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 20N120BD1 IXGT 20N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30	Original	PDF	20N120BD1 20N120BD1 IC110 O-247AD O-268 O-247) Fea140
IXGH20N120BD1 Abstract: IXGH 20N120BD1 Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 20N120BD1 IXGT 20N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30	Original	PDF	20N120BD1 20N120BD1 IC110 O-247AD O-268 O-247) Fea140 IXGH20N120BD1 IXGH 20N120BD1
Untitled Abstract: No abstract text available Text: MDD 310 IFRMS = 2x 480 A IFAVM = 2x 305 A VRRM = 800-2200 V High Power Diode Modules 3 VRSM VRRM V V 900 1300 1500 1700 2100 2300 800 1200 1400 1600 2000 2200 3 Type 1 2 2 1 MDD 310-08N1 MDD 310-12N1 MDD 310-14N1 MDD 310-16N1 MDD 310-20N1 MDD 310-22N1 Symbol	Original	PDF	310-08N1 310-12N1 310-14N1 310-16N1 310-20N1 310-22N1
Untitled Abstract: No abstract text available Text: Inductive sensors IFFM 20N17A3/S35L Inductive proximity switch dimension drawing 10 LED 32 7 7 19 3,5 10 20 M8 x 1 13 general data photo mounting type flush nominal sensing distance Sn 8 mm hysteresis 3 . 20 % of Sr output indicator LED red electrical data	Original	PDF	20N17A3/S35L housi500Â
20N120D1 Abstract: IC IGBT 20N120 20n120 FII30-12E ISOPLUS247 Text: IXER 20N120 IXER 20N120D1 NPT3 IGBT IC25 = 36 A VCES = 1200 V VCE sat typ = 2.4 V in ISOPLUS247 C ISOPLUS247™ C G G G C E IXER 20N120 Isolated Backside E E IXER 20N120D1 G = Gate C = Collector E = Emitter Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C	Original	PDF	20N120 20N120D1 ISOPLUS247TM 20080118a 20N120D1 IC IGBT 20N120 20n120 FII30-12E ISOPLUS247
Untitled Abstract: No abstract text available Text: MDD 255 High Power Diode Modules VRSM V 1300 1500 1700 1900 2100 2300 VRRM V 1200 1400 1600 1800 2000 2200 3 Type 1 2 MDD 255-12N1 MDD 255-14N1 MDD 255-16N1 MDD 255-18N1 MDD 255-20N1 MDD 255-22N1 Symbol Conditions IFRMS IFAVM TVJ = TVJM 180° sine IFSM TVJ = 45°C;	Original	PDF	255-12N1 255-14N1 255-16N1 255-18N1 255-20N1 255-22N1 200-2200V E72873 20121206e
Untitled Abstract: No abstract text available Text: Advanced Technical Information VCES IC25 VCE sat tfi(typ) IXGH 20N120 IXGT 20N120 IGBT High Voltage, Low VCE(sat) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V VGEM	Original	PDF	20N120 20N120 O-268 O-247 O-268AA
Untitled Abstract: No abstract text available Text: IXGA 20N100 VCES IXGP 20N100 IC25 VCE sat IGBT = 1000 V = 40 A = 3.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30	Original	PDF	20N100 O-220AB O-263 728B1
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MGW20N 120/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M GW 20N120 In su late d G ate Bipolar T ransistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced	OCR Scan	PDF	MGW20N 120/D 20N120 MGW20N120/D

20N1 Search Results

20N1 Result Highlights (5)

20N1 Price and Stock

Torex Semiconductor LTD XC6120N152NR-G

Infineon Technologies AG IPB120N10S405ATMA1

onsemi FDB120N10

Littelfuse Inc IXFK220N17T2

Littelfuse Inc IXFX420N10T

20N1 Datasheets (5)

20N1 Datasheets Context Search

IC IGBT 20N120

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20N100

20n120

IC IGBT 20N120

MDD25

T1125

2x520

20N15

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IXGH20N120BD1

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20N120D1

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