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    20N60B2D1 Search Results

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    20N60B2D1 Price and Stock

    IXYS Corporation IXSQ20N60B2D1

    IGBT PT 600V 35A TO-3P
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    IXYS Corporation IXSP20N60B2D1

    IGBT PT 600V 35A TO-220-3
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    DigiKey IXSP20N60B2D1 Bulk 50
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    Onlinecomponents.com IXSP20N60B2D1 130
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    IXYS Corporation IXSA20N60B2D1

    IGBT PT 600V 35A TO-263AA
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    IXYS Corporation IXSH20N60B2D1

    IGBT PT 600V 35A TO-247AD
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    DigiKey IXSH20N60B2D1 Bulk 30
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    Onlinecomponents.com IXSH20N60B2D1 2,495
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    20N60B2D1 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: IXSA 20N60B2D1 IXSP 20N60B2D1 High Speed IGBT Short Circuit SOA Capability VCES = 600 V I C25 = 35 A V CE sat = 2.5 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600


    Original     		20N60B2D1 IC110 8-06B 405B2 PDF

    DSEP 15-06A

    Abstract: 20N60B2D1 IXSH20N60B2D1 IC ti 072
    Text: IXSH 20N60B2D1 High Speed IGBT Short Circuit SOA Capability VCES = 600 V I C25 = 35 A V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous


    Original     		20N60B2D1 IC110 DSEP 15-06A 20N60B2D1 IXSH20N60B2D1 IC ti 072 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXSH 20N60B2D1 High Speed IGBT Short Circuit SOA Capability VCES = 600 V I C25 = 35 A V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous


    Original     		20N60B2D1 IC110 5-06A PDF

    20N60B2D1

    Abstract: No abstract text available
    Text: IXSA 20N60B2D1 IXSP 20N60B2D1 High Speed IGBT Short Circuit SOA Capability VCES = 600 V I C25 = 35 A V CE sat = 2.5 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600


    Original     		20N60B2D1 IC110 8-06B 405B2 20N60B2D1 PDF

    SP20N60B2D1

    Abstract: SP20N60 20N60B2
    Text: IXSP 20N60B2 IXSP 20N60B2D1 High Speed IGBT Short Circuit SOA Capability VCES = 600 V I C25 = 35 A V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600


    Original     		20N60B2 20N60B2D1 IC110 8-06B 405B2 SP20N60B2D1 SP20N60 20N60B2 PDF

    Untitled

    Abstract: No abstract text available
    Text: High Speed IGBT with Diode IXSH 30N60B2D1 IXST 30N60B2D1 VCES = 600 V I C25 = 48 A V CE sat = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		30N60B2D1 IC110 PDF

    4013V

    Abstract: Siemens DIODE E 1220 30N60B2D1
    Text: High Speed IGBT with Diode IXSH 30N60B2D1 IXST 30N60B2D1 VCES = 600 V I C25 = 48 A V CE sat = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		30N60B2D1 30N60B2D1 IC110 O-247 O-268 4013V Siemens DIODE E 1220 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF

    Siemens DIODE E 1220

    Abstract: 30N60B2D1 30N60B ixst30n60b2d1
    Text: High Speed IGBT with Diode IXSH 30N60B2D1 IXST 30N60B2D1 VCES = 600 V I C25 = 48 A V CE sat = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		30N60B2D1 IC110 Siemens DIODE E 1220 30N60B2D1 30N60B ixst30n60b2d1 PDF