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Rochester Electronics LLC SPW20N60C3E8177FKSA1 COOLMOS N-CHANNEL POWER MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPW20N60C3E8177FKSA1	Bulk	239,633		117	1 - 10 - 100 - 1000 $2.58 10000 $2.58	Buy Now
Rochester Electronics LLC AIKP20N60CTAKSA1 IGBT TRENCH FS 600V 40A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	AIKP20N60CTAKSA1	Bulk	23,130		169	1 - 10 - 100 - 1000 $1.78 10000 $1.78	Buy Now
Rochester Electronics LLC SPI20N60CFDXKSA1 N-CHANNEL POWER MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPI20N60CFDXKSA1	Bulk	7,668		132	1 - 10 - 100 - 1000 $2.28 10000 $2.28	Buy Now
Infineon Technologies AG SPB20N60C3ATMA1 MOSFET N-CH 650V 20.7A TO263-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	SPB20N60C3ATMA1	Cut Tape	5,695		1	1 $4.62 10 $3.058 100 $2.1686 1000 $2.01716 10000 $2.01716	Buy Now
	SPB20N60C3ATMA1	Digi-Reel	5,695		1	1 $4.62 10 $3.058 100 $2.1686 1000 $2.01716 10000 $2.01716	Buy Now
	SPB20N60C3ATMA1	Reel	5,000		1,000	1 - 10 - 100 - 1000 $1.64801 10000 $1.64801	Buy Now
Avnet Americas	SPB20N60C3ATMA1	Reel		15 Weeks	1,000	1 - 10 - 100 - 1000 $1.28811 10000 $1.2576	Buy Now
Newark ()	SPB20N60C3ATMA1	Cut Tape	3,160		1	1 $4.46 10 $2.97 100 $2.11 1000 $1.93 10000 $1.93	Buy Now
	SPB20N60C3ATMA1	Reel			1,000	1 - 10 - 100 - 1000 $1.9 10000 $1.9	Buy Now
	SPB20N60C3ATMA1	Reel			1,000	1 - 10 - 100 - 1000 $2.66 10000 $2.66	Buy Now
EBV Elektronik	SPB20N60C3ATMA1		209,000	16 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	SPB20N60C3ATMA1		167,000		1	1 - 10 - 100 - 1000 $2.6 10000 $2.6	Buy Now

Vyrian	SPB20N60C3ATMA1		34,912			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics LLC HGTG20N60C3R IGBT 600V 40A TO-247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HGTG20N60C3R	Bulk	4,575		130	1 - 10 - 100 - 1000 $2.32 10000 $2.32	Buy Now

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20N60C Datasheets (3)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
20N60C3DR	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	37.63KB	1
20N60C3R	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	37.63KB	1
20N60C3R	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	37.63KB	1

20N60C Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Advanced Technical Information COOLMOS * Power MOSFET IXKP 20N60C5M ID25 = 7.6 A VDSS = 600 V RDS on max = 0.2 W Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-220 FP D G D S G S Features MOSFET Conditions	Original	20N60C5M O-220	PDF
20n60c5 Abstract: DSA003709 Contextual Info: IXKH 20N60C5 IXKP 20N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 20 A VDSS = 600 V RDS on max = 0.2 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D q D(TAB) S S TO-220 AB (IXKP)	Original	20N60C5 O-247 O-220 20070625a DSA003709	PDF
Contextual Info: Advanced Technical Information IXKP 20N60C5M ID25 = 7.6 A VDSS = 600 V RDS on max = 0.2 Ω CoolMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Conditions	Original	20N60C5M O-220	PDF
20n60c Contextual Info: ADVANCE TECHNICAL INFORMATION CoolMOSTM Power MOSFET ISOPLUS220TM IXKC 20N60C Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions ISOPLUS 220LVTM Maximum Ratings VDSS TJ = 25°C to 150°C 600	Original	ISOPLUS220TM 20N60C 220LVTM O-220LV 728B1 065B1 123B1 20n60c	PDF
Contextual Info: IXKH 20N60C5 IXKP 20N60C5 CoolMOS 1 Power MOSFET ID25 = 20 A VDSS = 600 V RDS on) max = 0.2 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D ﬂ D(TAB) S S TO-220 AB (IXKP) G D S Features MOSFET	Original	20N60C5 O-247 O-220 20080523d	PDF
20N60C Contextual Info: IXKC 20N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 15 A RDS on) max = 190 m Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873	Original	20N60C ISOPLUS220TM E72873 20080523a 20N60C	PDF
20N60C Abstract: UPS 380v Contextual Info: ADVANCE TECHNICAL INFORMATION CoolMOS Power MOSFET ISOPLUS220TM IXKC 20N60C Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions ISOPLUS 220LVTM Maximum Ratings VDSS TJ = 25°C to 150°C 600	Original	ISOPLUS220TM 20N60C 220LVTM 728B1 065B1 123B1 20N60C UPS 380v	PDF
UPS 380v Abstract: 20n60c power switching Contextual Info: CoolMOSTM Power MOSFET IXKC 20N60C in ISOPLUS220TM Package Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , Superjunction MOSFET VDSS = 600 V ID25 = 14 A Ω RDS(on) = 190 mΩ Preliminary Data Sheet Symbol Test Conditions ISOPLUS 220LVTM	Original	20N60C ISOPLUS220TM 220LVTM E153432 728B1 065B1 123B1 UPS 380v 20n60c power switching	PDF
Contextual Info: Advanced Technical Information COOLMOS * Power MOSFET IXKP 20N60C5M ID25 = 7.6 A VDSS = 600 V RDS on max = 0.2 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Symbol	Original	20N60C5M O-220 20070704a	PDF
Contextual Info: Advanced Technical Information COOLMOS * Power MOSFET IXKP 20N60C5M ID25 = 7.6 A VDSS = 600 V RDS on max = 0.2 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Conditions	Original	20N60C5M O-220	PDF
20n60c5 Abstract: IXKH20N60C5 20n60c IXKP20N60C5 20n60c* equivalent 20n60 K 739 mosfet MOSFET "symbol 7V" MOSFET N Contextual Info: IXKH 20N60C5 IXKP 20N60C5 CoolMOS 1 Power MOSFET ID25 = 20 A VDSS = 600 V RDS on) max = 0.2 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D q D(TAB) S S TO-220 AB (IXKP) G D S Features MOSFET Symbol	Original	20N60C5 O-247 O-220 20080523d 20n60c5 IXKH20N60C5 20n60c IXKP20N60C5 20n60c* equivalent 20n60 K 739 mosfet MOSFET "symbol 7V" MOSFET N	PDF
20n60c Abstract: UPS 380v IXKC 20n60c Contextual Info: ADVANCE TECHNICAL INFORMATION CoolMOS Power MOSFET ISOPLUS220TM IXKC 20N60C Electrically Isolated Back Surface VDSS = 600 V ID25 = 14 A Ω RDS on = 190 mΩ N-Channel Enhancement Mode Low RDS(on), High Voltage MOSFET Symbol Test Conditions Maximum Ratings	Original	ISOPLUS220TM 20N60C 220TM ISOPLUS220 20n60c UPS 380v IXKC 20n60c	PDF
20n60c5 Abstract: 20n60c5m Contextual Info: IXKP 20N60C5M CoolMOS 1 Power MOSFET ID25 = 7.6 A VDSS = 600 V RDS on) max = 0.2 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions	Original	20N60C5M O-220 20090209d 20n60c5 20n60c5m	PDF
Contextual Info: IXKP 20N60C5M CoolMOS 1 Power MOSFET ID25 = 7.6 A VDSS = 600 V RDS on) max = 0.2 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions	Original	20N60C5M O-220 20090209d	PDF

Contextual Info: IXKH 20N60C5 IXKP 20N60C5 COOLMOS * Power MOSFET ID25 = 20 A VDSS = 600 V RDS on max = 0.2 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D q D(TAB) S S TO-220 AB (IXKP) G D S Features MOSFET Symbol	Original	20N60C5 O-247 O-220 20080310c	PDF
20n60c5 Contextual Info: IXKP 20N60C5M CoolMOS 1 Power MOSFET ID25 = 7.6 A VDSS = 600 V RDS on) max = 0.2 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions	Original	20N60C5M O-220 20080523c 20n60c5	PDF
20n60c Abstract: 40n60c 40n60 40N60SCD1 75n60 CoolMOS IXYS DATE CODE Ixkn D-68623 IXKC 20n60c Contextual Info: Product Change Notice PCN No.: 05-03 Customer: All IXYS product type: CoolMOS products in 600V: IXKC 20N60C, IXKC 40N60C IXKR 40N60C IXKF 40N60SCD1 IXKN 40N60C, IXKN 75N60C Description of change: CoolMOS die type C2 will be replaced by C3 Reason for change:	Original	20N60C, 40N60C 40N60SCD1 40N60C, 75N60C 14F12 20n60c 40n60c 40n60 40N60SCD1 75n60 CoolMOS IXYS DATE CODE Ixkn D-68623 IXKC 20n60c	PDF
Contextual Info: IXKH 20N60C5 IXKP 20N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 20 A VDSS = 600 V RDS on max = 0.2 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D q D(TAB) S S TO-220 AB (IXKP)	Original	20N60C5 O-247 O-220 20070625a	PDF
Contextual Info: IXKH 20N60C5 IXKP 20N60C5 Advanced Technical Information ID25 = 20 A = 600 V VDSS RDS on max = 0.2 Ω CoolMOS Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D S D (TAB) S TO-220 AB (IXKP) G	Original	20N60C5 20N60C5 O-247 O-220 Appli300	PDF
20n60c Contextual Info: IXKC 20N60C CoolMOS Power MOSFET VDSS = 600 V ID25 = 15 A RDS on max = 190 mΩ Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873 Features	Original	20N60C ISOPLUS220TM E72873 20n60c	PDF
Contextual Info: IXKH 20N60C5 IXKP 20N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 20 A VDSS = 600 V RDS on max = 0.2 W N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-247 AD (IXKH) D G G D S S D(TAB) TO-220 AB (IXKP)	Original	20N60C5 O-247 O-220	PDF
20n60c Abstract: IXKC 20n60c E72873 A8711 Contextual Info: IXKC 20N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 15 A RDS on) max = 190 mΩ Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873	Original	20N60C ISOPLUS220TM E72873 20080523a 20n60c IXKC 20n60c E72873 A8711	PDF
20n60c3 Abstract: 20N60C3 equivalent sp*20n60c3 20n60c Q67040-S4397 diode smd marking code 621 20n60 SPB20N60C3 S4410 spp20n60 Contextual Info: Preliminary data 20N60C3, 20N60C3 20N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Worldwide best RDS on in TO 220 RDS(on) 0.19 Ω ID 20.7 A • Ultra low gate charge	Original	SPP20N60C3, SPB20N60C3 SPA20N60C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 SPP20N60C3 Q67040-S4398 20n60c3 20N60C3 equivalent sp*20n60c3 20n60c Q67040-S4397 diode smd marking code 621 20n60 SPB20N60C3 S4410 spp20n60	PDF
20n60c3DR Abstract: 20n60c3 HGTG20N60C3DR 20n60c* equivalent INTEPOWER HGTG LD26 RURP1560 20N60C3D Contextual Info: 20N60C3DR S E M I C O N D U C T O R 40A, 600V, Rugged, UFS Series N-Channel IGBT with Anti-Parallel Ultrafast Diode November 1996 Features Description • 40A, 600V at TC = 25oC This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as	Original	HGTG20N60C3DR 150oC 330ns 1-800-4-HARRIS 20n60c3DR 20n60c3 HGTG20N60C3DR 20n60c* equivalent INTEPOWER HGTG LD26 RURP1560 20N60C3D	PDF

20N60C Search Results

20N60C Price and Stock

Rochester Electronics LLC SPW20N60C3E8177FKSA1

Rochester Electronics LLC AIKP20N60CTAKSA1

Rochester Electronics LLC SPI20N60CFDXKSA1

Infineon Technologies AG SPB20N60C3ATMA1

Rochester Electronics LLC HGTG20N60C3R

20N60C Datasheets (3)

20N60C Datasheets Context Search

20n60c5

20n60c

20N60C

20N60C

UPS 380v

20n60c5

20n60c

20n60c5

20n60c5

20n60c

20n60c

20n60c

20n60c3

20n60c3DR

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