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    20N60C3D Search Results

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    20N60C3D Price and Stock

    onsemi HGTG20N60C3D

    IGBT 600V 45A 164W TO247
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    DigiKey HGTG20N60C3D Tube
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    Newark HGTG20N60C3D Bulk 300
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    Harris Semiconductor HGTG20N60C3DR

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    NexGen Digital HGTG20N60C3DR 2
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    20N60C3D Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    20N60C3DR Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

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    20n60c3DR

    Abstract: 20n60c3 HGTG20N60C3DR 20n60c* equivalent INTEPOWER HGTG LD26 RURP1560 20N60C3D
    Text: 20N60C3DR S E M I C O N D U C T O R 40A, 600V, Rugged, UFS Series N-Channel IGBT with Anti-Parallel Ultrafast Diode November 1996 Features Description • 40A, 600V at TC = 25oC This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as


    Original     		PDF HGTG20N60C3DR 150oC 330ns 1-800-4-HARRIS 20n60c3DR 20n60c3 HGTG20N60C3DR 20n60c* equivalent INTEPOWER HGTG LD26 RURP1560 20N60C3D

    20N60C3DR

    Abstract: 20N60C3D HGTG20N60C3DR 20n60c3 INTEPOWER LD26 RURP1560
    Text: 20N60C3DR 40A, 600V, Rugged, UFS Series N-Channel IGBT with Anti-Parallel Ultrafast Diode November 1996 Features Description • 40A, 600V at TC = 25oC This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as


    Original     		PDF HGTG20N60C3DR 150oC 330ns 20N60C3DR 20N60C3D HGTG20N60C3DR 20n60c3 INTEPOWER LD26 RURP1560

    20N60C3DR

    Abstract: g20n60c3d 20n60c3
    Text: [ /Title HGT G20N6 0C3D R /Subject (40A, 600V, Rugged, UFS Series NChannel IGBT with AntiParallel Ultrafa st Diode) /Autho r () /Keywords (Intersil Corporation, semiconductor, Avalanche CT ODU ODUCT R P PR TE OLE UTE OBS UBSTIT 0C3D ES N6 SIBL HGTG20 S O


    Original     		PDF HGTG20 HGTG20N60C3DR G20N6 20N60C3DR g20n60c3d 20n60c3

    20N60C3DR

    Abstract: No abstract text available
    Text: X 20N60C3DR M Aß , 40A, 600V, Rugged, UFS Series N-C hannel IGBT w ith A nti-Parallel U ltrafast Diode November 1996 Features Description • 40A, 600V at T c = 25°C This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as


    OCR Scan     		PDF HGTG20N60C3DR 330ns 20N60C3DR