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    20N60C3 Price and Stock

    Infineon Technologies AG SPP20N60C3XKSA1

    MOSFET N-CH 600V 20.7A TO220-3
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    Rochester Electronics SPP20N60C3XKSA1 87,154 1
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    Infineon Technologies AG SPB20N60C3ATMA1

    MOSFET N-CH 650V 20.7A TO263-3
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    Infineon Technologies AG SPW20N60C3FKSA1

    MOSFET N-CH 650V 20.7A TO247-3
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    Infineon Technologies AG SPA20N60C3XKSA1

    MOSFET N-CH 600V 20.7A TO220-31
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    Rochester Electronics LLC HGTP20N60C3R

    IGBT 600V 45A TO-220
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    DigiKey HGTP20N60C3R Bulk 79
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    Find more 20N60C3 price and stock on Findchips.com

    20N60C3 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    20N60C3DR Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    20N60C3R Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    20N60C3R Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    20N60C3 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    20n60c3

    Abstract: 20N60C3 equivalent sp*20n60c3 20n60c Q67040-S4397 diode smd marking code 621 20n60 SPB20N60C3 S4410 spp20n60
    Text: Preliminary data 20N60C3, 20N60C3 20N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Worldwide best RDS on in TO 220 RDS(on) 0.19 Ω ID 20.7 A • Ultra low gate charge


    Original     		SPP20N60C3, SPB20N60C3 SPA20N60C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 SPP20N60C3 Q67040-S4398 20n60c3 20N60C3 equivalent sp*20n60c3 20n60c Q67040-S4397 diode smd marking code 621 20n60 SPB20N60C3 S4410 spp20n60 PDF

    20n60c3DR

    Abstract: 20n60c3 HGTG20N60C3DR 20n60c* equivalent INTEPOWER HGTG LD26 RURP1560 20N60C3D
    Text: 20N60C3DR S E M I C O N D U C T O R 40A, 600V, Rugged, UFS Series N-Channel IGBT with Anti-Parallel Ultrafast Diode November 1996 Features Description • 40A, 600V at TC = 25oC This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as


    Original     		HGTG20N60C3DR 150oC 330ns 1-800-4-HARRIS 20n60c3DR 20n60c3 HGTG20N60C3DR 20n60c* equivalent INTEPOWER HGTG LD26 RURP1560 20N60C3D PDF

    20N60C3

    Abstract: Q67040-S4397 transistor 20N60c3 Q67040-S4398 sp*20n60c3 smd 20n60c3 SPB20N60C3 diode smd marking code 621 20n60c3 transistor 20N60
    Text: Final data 20N60C3, 20N60C3 20N60C3, 20N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.19 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge P-TO220-3-31


    Original     		SPP20N60C3, SPB20N60C3 SPI20N60C3, SPA20N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: 20N60C3 Q67040-S4397 transistor 20N60c3 Q67040-S4398 sp*20n60c3 smd 20n60c3 SPB20N60C3 diode smd marking code 621 20n60c3 transistor 20N60 PDF

    20n60c3

    Abstract: 20N60C3 equivalent SPW20N60C3 sp*20n60c3 SDP06S60 transistor 20N60c3 506V
    Text: 20N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on) 0.19 Ω


    Original     		SPW20N60C3 P-TO247 Q67040-S4406 20N60C3 20n60c3 20N60C3 equivalent SPW20N60C3 sp*20n60c3 SDP06S60 transistor 20N60c3 506V PDF

    20N60C3 equivalent

    Abstract: 20n60c3 circuit MOSFET 20N60c3
    Text: CM6901 SLS SRC/LLC+SR Controller with 1 FM+2 PWMs GENERAL DESCRIPTION FEATURES CM6901 is a SLS, SRC/LLC + SR resonant controller ‹ 90+ Controller ‹ Smaller and Thinner Transformer ‹ 20ms with reasonable Bulk Cap(hold up time) ‹ SLS, SRC/LLC + SR resonant controller


    Original     		CM6901 CM6901 20N60C3 equivalent 20n60c3 circuit MOSFET 20N60c3 PDF

    20n60c3

    Abstract: 20N60C3R HGT1S20N60C3RS HGTP20N60C3R HGT1S20N60C3RS9A HGTG20N60C3R RURP1560 HGT1S20N60C3R
    Text: 20N60C3R, 20N60C3R, 20N60C3R, 20N60C3RS S E M I C O N D U C T O R 40A, 600V, Rugged UFS Series N-Channel IGBTs January 1997 Features Description • 40A, 600V TJ = 25oC This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as


    Original     		HGTG20N60C3R, HGTP20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS 150oC 330ns 1-800-4-HARRIS 20n60c3 20N60C3R HGT1S20N60C3RS HGTP20N60C3R HGT1S20N60C3RS9A HGTG20N60C3R RURP1560 HGT1S20N60C3R PDF

    835NL-1A-B-C

    Abstract: CM6502 CM6502T 20N60C3 CM6502THH CM6901 Power Transformer EE-19 EE-19 transformer 20n60c3 circuit 835NL-1A-B-C 12v
    Text: CM6901 SLS SRC/LLC+SR Controller with 1 FM+2 PWMs GENERAL DESCRIPTION FEATURES CM6901 is a SLS, SRC/LLC + SR resonant controller ‹ 90+ Controller and it can operate at both SRC and LLC region with ‹ Smaller and Thinner Transformer synchronous rectification to achieve high efficiency. Its ‹


    Original     		CM6901 CM6901 835NL-1A-B-C CM6502 CM6502T 20N60C3 CM6502THH Power Transformer EE-19 EE-19 transformer 20n60c3 circuit 835NL-1A-B-C 12v PDF

    pq3230

    Abstract: 20n60c3 CM6901XISTR
    Text: CM6901 SLS SRC/LLC+SR Controller with 1 FM+2 PWMs GENERAL DESCRIPTION FEATURES CM6901 is a SLS, SRC/LLC + SR resonant controller ‹ 90+ Controller ‹ Smaller and Thinner Transformer ‹ 20ms with reasonable Bulk Cap(hold up time) ‹ SLS, SRC/LLC + SR resonant controller


    Original     		CM6901 CM6901 pq3230 20n60c3 CM6901XISTR PDF

    20N60C3

    Abstract: 20N60C3 equivalent SPD06S60 sp*20n60c3 smd 20n60c3 SPB20N60C3 Q67040-S4550 S4550 spp20n60c3 SPI20N60C3
    Text: 20N60C3, 20N60C3 20N60C3, 20N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.19 Ω ID 20.7 A • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 220 • Ultra low gate charge P-TO220-3-31


    Original     		SPP20N60C3, SPB20N60C3 SPI20N60C3, SPA20N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: 20N60C3 20N60C3 equivalent SPD06S60 sp*20n60c3 smd 20n60c3 SPB20N60C3 Q67040-S4550 S4550 spp20n60c3 SPI20N60C3 PDF

    20N60C3

    Abstract: 20N60C3 equivalent SPA20N60C3 s4410 AN-TO220-3-31-01 GPT09301 SDP06S60 transistor 20N60c3
    Text: 20N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on) 0.19 Ω


    Original     		SPA20N60C3 P-TO220-3-31 P-TO220-3-31 Q67040-S4410 20N60C3 20N60C3 20N60C3 equivalent SPA20N60C3 s4410 AN-TO220-3-31-01 GPT09301 SDP06S60 transistor 20N60c3 PDF

    20N60C3

    Abstract: Q67040-S4550 20n60c3 TO-247 20n60c3 transistor SPD06S60 20N60C3 MARKING SPI20N60C3
    Text: 20N60C3, 20N60C3 20N60C3, 20N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.19 Ω ID 20.7 A • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 220 • Ultra low gate charge P-TO220-3-31 P-TO262-3-1


    Original     		SPP20N60C3, SPB20N60C3 SPI20N60C3, SPA20N60C3 P-TO-220-3-31: SPP20N60C3 SPI20N60C3 P-TO220-3-31 20N60C3 Q67040-S4550 20n60c3 TO-247 20n60c3 transistor SPD06S60 20N60C3 MARKING PDF

    CM6502T

    Abstract: No abstract text available
    Text: CM6901 SLS SRC/LLC+SR Controller with 1 FM+2 PWMs GENERAL DESCRIPTION FEATURES CM6901 is a SLS, SRC/LLC + SR resonant controller ‹ 90+ Controller and it can operate at both SRC and LLC region with ‹ Smaller and Thinner Transformer synchronous rectification to achieve high efficiency. Its ‹


    Original     		CM6901 CM6901 CM6502T PDF

    CM6901

    Abstract: No abstract text available
    Text: CM6901 SLS SRC/LLC+SR Controller with 1 FM+2 PWMs GENERAL DESCRIPTION FEATURES CM6901 is a SLS, SRC/LLC + SR resonant controller ‹ 90+ Controller ‹ Smaller and Thinner Transformer ‹ 20ms with reasonable Bulk Cap(hold up time) ‹ SLS, SRC/LLC + SR resonant controller


    Original     		CM6901 CM6901 PDF

    20N60C3

    Abstract: SPD06S60 SPW20N60C3 sp*20n60c3 transistor 20N60c3
    Text: 20N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.19 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO247 • Extreme dv/dt rated • High peak current capability


    Original     		SPW20N60C3 P-TO247 Q67040-S4406 20N60C3 20N60C3 SPD06S60 SPW20N60C3 sp*20n60c3 transistor 20N60c3 PDF

    SPW20N60C3

    Abstract: transistor 20N60c3
    Text: 20N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.19 Ω ID 20.7 A • New revolutionary high voltage technology • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability


    Original     		SPW20N60C3 P-TO247 Q67040-S4406 20N60C3 SPW20N60C3 transistor 20N60c3 PDF

    20n60c3

    Abstract: spp20n60c3 SPB20N60C3
    Text: Preliminary data 20N60C3, 20N60C3 20N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Worldwide best RDS on in TO 220 RDS(on) 0.19 Ω ID 20.7 A • Ultra low gate charge


    Original     		SPP20N60C3, SPB20N60C3 SPA20N60C3 SPP20N60C3 SPA20N60C3 P-TO220-3-1 P-TO263-3-2 P-TO220-3-31 20n60c3 PDF

    diode marking G36

    Abstract: SPW20N60C3 20N60C3 SPW20N60C3 20n60c3
    Text: 20N60C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS on 0.19 Ω • Extreme dv/dt rated ID 20.7 A • High peak current capability


    Original     		SPW20N60C3 P-TO247 Q67040-S4406 20N60C3 diode marking G36 SPW20N60C3 20N60C3 SPW20N60C3 20n60c3 PDF

    20N60C3

    Abstract: Q67040-S4550
    Text: 20N60C3, 20N60C3 20N60C3, 20N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.19 Ω ID 20.7 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge P-TO220-3-31


    Original     		SPP20N60C3, SPB20N60C3 SPI20N60C3, SPA20N60C3 P-TO-220-3-31: SPP20N60C3 SPI20N60C3 SPA20N60C3 P-TO220-3-31 20N60C3 Q67040-S4550 PDF

    20N60 equivalent

    Abstract: 20n60c* equivalent 20n60 c equivalent 20n60 intersil 20n60c3 20N60C3R hg*20n60
    Text: [ /Title HGT G20N6 0C3R, HGTP 20N60 C3R, HGT1 S20N6 0C3RS /Subject (40A, 600V, Rugged UFS Series NChannel IGBTs ) /Autho r () /Keywords (Intersil Corporation, semiconductor, Avalanche 20N60C3R, 20N60C3R, 20N60C3RS T UCT ROD RODUC P E P T E


    Original     		HGTG20N60C3R, HGTP20N60C3R, HGT1S20N60C3RS G20N6 20N60 S20N6 20N60 equivalent 20n60c* equivalent 20n60 c equivalent 20n60 intersil 20n60c3 20N60C3R hg*20n60 PDF

    20n60c3

    Abstract: 20N60C3 equivalent SPD06S60 diode marking G36 SPW20N60C3 SPW20N60
    Text: 20N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.19 Ω ID 20.7 A • New revolutionary high voltage technology • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability


    Original     		SPW20N60C3 P-TO247 Q67040-S4406 20N60C3 20n60c3 20N60C3 equivalent SPD06S60 diode marking G36 SPW20N60C3 SPW20N60 PDF

    CM6502

    Abstract: No abstract text available
    Text: CM6901 SLS SRC/LLC+SR Controller with 1 FM+2 PWMs GENERAL DESCRIPTION FEATURES CM6901 is a SLS, SRC/LLC + SR resonant controller ‹ 90+ Controller and it can operate at both SRC and LLC region with ‹ Smaller and Thinner Transformer synchronous rectification to achieve high efficiency. Its ‹


    Original     		CM6901 CM6901 CM6502 PDF

    20N60C3R

    Abstract: No abstract text available
    Text: HARRIS 20N60C3R, 20N60C3R, 20N60C3R, 20N60C3RS S E M I C O N D U C T O R 40A, 600V, Rugged UFS Series N-Channel IGBTs January 1997 Features Description • 40A, 600V T j = 25°C This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as


    OCR Scan     		HGTG20N60C3R, HGTP20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS 20N60C3R PDF

    20N60C3DR

    Abstract: No abstract text available
    Text: X 20N60C3DR M Aß , 40A, 600V, Rugged, UFS Series N-C hannel IGBT w ith A nti-Parallel U ltrafast Diode November 1996 Features Description • 40A, 600V at T c = 25°C This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as


    OCR Scan     		HGTG20N60C3DR 330ns 20N60C3DR PDF

    20ng0c3

    Abstract: 20NG0 20n60c 20n60c3 20N60C3R 20n60c* equivalent TG20N60C3R 20N 443 20NG0C3R
    Text: HARRIS S E M I C O N D U C T O R H G T G 2 0 N 6 0 C 3 R , H G T P 2 0 N 6 0 C 3 R , H G T 1 S 2 0 N 6 0 C 3 R , H G T 1 S 2 0 N 6 0 C 3 R S 40A, 600V, Ru gg ed UFS Series N-Chan nel IG BTs January 1997 F ea tu res Description • 40A, 600V T j = 2 5°C This family of IGBTs was designed for optimum performance


    OCR Scan     		1-800-4-H 20ng0c3 20NG0 20n60c 20n60c3 20N60C3R 20n60c* equivalent TG20N60C3R 20N 443 20NG0C3R PDF