AN-994
Abstract: IRF1104 IRF1104L IRF1104S IRL3103L
Text: PD - 95526 IRF1104S/LPbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Surface Mount IRF1104S Low-profile through-hole (IRF1104L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 40V
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IRF1104S/LPbF
IRF1104S)
IRF1104L)
EIA-418.
AN-994
IRF1104
IRF1104L
IRF1104S
IRL3103L
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Untitled
Abstract: No abstract text available
Text: PD - 95526 IRF1104S/LPbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Surface Mount IRF1104S Low-profile through-hole (IRF1104L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 40V
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IRF1104S/LPbF
IRF1104S)
IRF1104L)
EIA-418.
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IRF110
Abstract: IRF1104L IRF1104S IRL3103L AN-994 IRF1104
Text: PD - 95526 IRF1104S/LPbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Surface Mount IRF1104S Low-profile through-hole (IRF1104L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 40V
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IRF1104S/LPbF
IRF1104S)
IRF1104L)
EIA-418.
IRF110
IRF1104L
IRF1104S
IRL3103L
AN-994
IRF1104
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IRF1104
Abstract: No abstract text available
Text: 2002-02-21 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-144-32 IRF1104 HEXFET TO220 PD- 9.1724A IRF1104 PRELIMINARY HEXFET Power MOSFET l l l l l l Advanced Process Technology
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IRF1104
IRF1104
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IRF1104
Abstract: No abstract text available
Text: PD- 9.1724A IRF1104 PRELIMINARY HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 40V RDS on = 0.009Ω G ID = 100A
S Description
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IRF1104
O-220
IRF1104
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40V 60A MOSFET
Abstract: IRF1104
Text: PD- 9.1724A IRF1104 PRELIMINARY HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 40V RDS on = 0.009Ω G ID = 100A
S Description
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IRF1104
O-220
40V 60A MOSFET
IRF1104
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Untitled
Abstract: No abstract text available
Text: PD - 94967 IRF1104PbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 40V RDS on = 0.009" G ID = 100A
S Description
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IRF1104PbF
O-220
O-220AB
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Untitled
Abstract: No abstract text available
Text: PD - 94967 IRF1104PbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 40V RDS on = 0.009Ω G ID = 100A
S Description
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IRF1104PbF
O-220
O-220AB.
O-220AB
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Untitled
Abstract: No abstract text available
Text: PD - 94967 IRF1104PbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 40V RDS on = 0.009Ω G ID = 100A
S Description
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IRF1104PbF
O-220
O-220AB
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AN-994
Abstract: IRF1104 IRF1104L IRF1104S
Text: PD -91845 IRF1104S/L HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Surface Mount IRF1104S Low-profile through-hole (IRF1104L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 40V RDS(on) = 0.009Ω
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IRF1104S/L
IRF1104S)
IRF1104L)
AN-994
IRF1104
IRF1104L
IRF1104S
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AN-994
Abstract: IRF1104 IRF1104L IRF1104S
Text: PD -91845 IRF1104S/L HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Surface Mount IRF1104S Low-profile through-hole (IRF1104L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 40V RDS(on) = 0.009Ω
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IRF1104S/L
IRF1104S)
IRF1104L)
AN-994
IRF1104
IRF1104L
IRF1104S
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Untitled
Abstract: No abstract text available
Text: AUIRFR8401 AUIRFU8401 AUTOMOTIVE GRADE HEXFET Power MOSFET Features Advanced Process Technology New Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant
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AUIRFR8401
AUIRFU8401
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D 92 M - 02 DIODE
Abstract: D 92 M - 03 DIODE KF60N06P c 92 M - 02 DIODE
Text: SEMICONDUCTOR KF60N06P TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor
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KF60N06P
Fig13.
Fig14.
Fig15.
D 92 M - 02 DIODE
D 92 M - 03 DIODE
KF60N06P
c 92 M - 02 DIODE
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MOSFET N-CHANNEL 60v 60A
Abstract: 60n06 60n06l
Text: UNISONIC TECHNOLOGIES CO., LTD 60N06 Power MOSFET 60A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 60N06 is N-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom
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60N06
60N06
115pF
QW-R502-121
MOSFET N-CHANNEL 60v 60A
60n06l
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60N06
Abstract: datasheet of 60N06 60N06L-TA3-T 30V 60A power p MOSFET transistor 60n06 302010S ultra low power mosfet fast switching 30Atyp
Text: UNISONIC TECHNOLOGIES CO., LTD 60N06 Power MOSFET 60 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 60N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom
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60N06
60N06
60N06L-TA3-T
60N06G-TA3-T
O-220
60N06L-TF3-T
60N06G-Tt
QW-R502-121
datasheet of 60N06
60N06L-TA3-T
30V 60A power p MOSFET
transistor 60n06
302010S
ultra low power mosfet fast switching
30Atyp
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UTT60N06 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT60N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed and low thermal resistance. usually used at
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UTT60N06
UTT60N06
O-252
UTT60N06L-TN3-R
UTT60N06G-TN3-R
QW-R502-575
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Untitled
Abstract: No abstract text available
Text: P *3 3 S RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs September 1998 Features Description • 60A, 30V These P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives opti
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RFG60P03,
RFP60P03,
RF1S60P03,
RF1S60P03SM
0-027Q
69e-4
33e-6
05e-9
33e-8)
80e-2
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75332s
Abstract: No abstract text available
Text: inter«! HUF75332G3, HUF75332P3, HUF75332S3S Data Sheet June 1999 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs Ultras Th e se N -C hannel pow e r M O S F E Ts are m anu facture d u sing the innovative U ltraFET process. T h is a dvanced proce ss te ch n olo gy
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HUF75332G3,
HUF75332P3,
HUF75332S3S
AN7254
AN7260.
75332s
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Untitled
Abstract: No abstract text available
Text: PD-9.1724A International IQ R Rectifier IRF1104 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vdss = 40 V RüS on = 0.009Î2 lD = 100A
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IRF1104
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Untitled
Abstract: No abstract text available
Text: RFG60P05E & HAS«» 60A, 50V, ESD Rated, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFET D e c e m b e r 1995 Package Features JEDEC STYLE TO-247 • 60 A ,50V SOURCE • rDS ON = 0.03012 • Temperature Compensating PSPICE Model • 2kV ESD Rated
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RFG60P05E
O-247
11e-1
34e-3TRS2
46e-12)
15e-10
1e-30
42e-4
85e-3
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SSP60N06
Abstract: SSp60n05 th250 mosfet n-channel 12 amperes
Text: N-CHANNEL POWER MOSFETS SSP60N06/05 FEATURES • Lower R d s <o n • Improved inductive niggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability
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SSP60N06/05
O-220
SSP60N06
SSP60N05
is-20v
th250
mosfet n-channel 12 amperes
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RFG60P05E
Abstract: No abstract text available
Text: RFG60P05E in te fs il D a ta S h e e t J u ly 1 9 9 9 60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET • 60A, 50V RFG60P05E PACKAGE TO-247 • rDS ON = 0-030Q • Temperature Compensating PSPICE Model • 2kV ESD Rated • Peak Current vs Pulse Width Curve
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RFG60P05E
TA09835.
0-030Q
RFG60P05E
AN7254
AN7260.
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P-CHANNEL 45A TO-247 POWER MOSFET
Abstract: RFG60P06E
Text: interrii RFG60P06E D a ta S h e e t J u ly 1 9 9 9 60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET Features performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated
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RFG60P06E
RFG60P06E
TA09836.
030CTION
AN7254
AN7260.
P-CHANNEL 45A TO-247 POWER MOSFET
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SSS60N06
Abstract: SSS60N05 MOSFET N 30V 30A 252 LO36 n-channel, 60v, 60a rj55 S-SS60
Text: N-CHANNEL POWER MOSFETS SSS60N06/05 FEATURES • Extermely Lower R dsion • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance •Extended safe operating area • Improved high temperature reliability
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SSS60N06/05
SSS60N06
SSS60N05
O-220F
B-20V
D02fl4bb
MOSFET N 30V 30A 252
LO36
n-channel, 60v, 60a
rj55
S-SS60
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