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    75332S Search Results

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    75332S Price and Stock

    Rochester Electronics LLC HUFA75332S3ST

    MOSFET N-CH 55V 60A D2PAK
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    DigiKey HUFA75332S3ST Bulk 44,255 634
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    Rochester Electronics LLC HUF75332S3ST

    MOSFET N-CH 55V 52A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HUF75332S3ST Bulk 23,990 386
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    Rochester Electronics LLC HUF75332S3S

    N-CHANNEL POWER MOSFET
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    DigiKey HUF75332S3S Bulk 2,788 683
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    onsemi HUF75332S3ST

    MOSFET N-CH 55V 60A D2PAK
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    DigiKey HUF75332S3ST Reel
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    onsemi HUFA75332S3S

    MOSFET N-CH 55V 60A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HUFA75332S3S Tube 400
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    Find more 75332S price and stock on Findchips.com

    75332S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HUF75332P3

    Abstract: 75332 75332P 75332S HUF75332G3 HUF75332S3S HUF75332S3ST TB334
    Text: HUF75332G3, HUF75332P3, 75332S3S Data Sheet June 1999 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75332G3, HUF75332P3, HUF75332S3S HUF75332P3 75332 75332P 75332S HUF75332G3 HUF75332S3S HUF75332S3ST TB334

    75332P

    Abstract: 75332 75332S fairchild 75332s 1e9A HUF75332G3 HUF75332P3 HUF75332S3S HUF75332S3ST TB334
    Text: HUF75332G3, HUF75332P3, 75332S3S Data Sheet January 2005 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75332G3, HUF75332P3, HUF75332S3S 75332P 75332 75332S fairchild 75332s 1e9A HUF75332G3 HUF75332P3 HUF75332S3S HUF75332S3ST TB334

    Untitled

    Abstract: No abstract text available
    Text: This document was generated on 06/22/2012 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: Overview: Description: 75332-0777 Active GbX Backplane Connector System 1.85mm by 1.85mm Pitch 3-Pair GbX® Backplane Connector System, Power Module,


    Original     		PDF PS-75221-999 TM-622022099 PS-75221-999 SD-75331-001

    Untitled

    Abstract: No abstract text available
    Text: HUF75332G3, HUF75332P3, 75332S3S Data Sheet January 2005 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75332G3, HUF75332P3, HUF75332S3S

    75332P

    Abstract: fairchild 75332s 75332S HUF75332G3 HUF75332P3 HUF75332S3S HUF75332S3ST TB334
    Text: HUF75332G3, HUF75332P3, 75332S3S Data Sheet December 2001 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75332G3, HUF75332P3, HUF75332S3S 75332P fairchild 75332s 75332S HUF75332G3 HUF75332P3 HUF75332S3S HUF75332S3ST TB334

    75332

    Abstract: 75332S 75332P HUFA75332G3 HUFA75332P3 HUFA75332S3S HUFA75332S3ST TB334
    Text: HUFA75332G3, HUFA75332P3, 75332S3S Data Sheet June 2002 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUFA75332G3, HUFA75332P3, HUFA75332S3S 75332 75332S 75332P HUFA75332G3 HUFA75332P3 HUFA75332S3S HUFA75332S3ST TB334

    75332p

    Abstract: 75332S 75332 HUF75332P3 75332G huf75332 HUF75332G3 HUF75332S3S HUF75332S3ST TB334
    Text: HUF75332G3, HUF75332P3, 75332S3S Data Sheet June 1999 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75332G3, HUF75332P3, HUF75332S3S 75332p 75332S 75332 HUF75332P3 75332G huf75332 HUF75332G3 HUF75332S3S HUF75332S3ST TB334

    75332P3

    Abstract: 75332S3 TO24 TA753 HUF75332P3 75332G3
    Text: HUF75332G3, HUF75332P3, 75332S3, 75332S3S S E M I C O N D U C T O R 52A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs March 1998 Features Description • 52A, 55V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in


    Original     		PDF HUF75332G3, HUF75332P3, HUF75332S3, HUF75332S3S 1-800-4-HARRIS 75332P3 75332S3 TO24 TA753 HUF75332P3 75332G3

    Untitled

    Abstract: No abstract text available
    Text: This document was generated on 10/28/2013 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: Overview: Description: 75332-0555 Active GbX Backplane Connector System 3-Pair GbX® Backplane Connector System, Power Module, 12 Circuits, 1.27µm Gold


    Original     		PDF E29179 TM-622022099 75332Series SD-75331-001

    75332p

    Abstract: No abstract text available
    Text: HUFA75332G3, HUFA75332P3, 75332S3S Data Sheet June 2002 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUFA75332G3, HUFA75332P3, HUFA75332S3S 75332p

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    Untitled

    Abstract: No abstract text available
    Text: This document was generated on 08/09/2012 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: Overview: Description: 75332-0777 Active GbX Backplane Connector System 1.85mm by 1.85mm Pitch 3-Pair GbX® Backplane Connector System, Power Module,


    Original     		PDF PS-75221-999 TM-622022099 PS-75221-999 SD-75331-001

    75332S

    Abstract: No abstract text available
    Text: HUFA75332G3, HUFA75332P3, 75332S3S TM Data Sheet November 2000 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUFA75332G3, HUFA75332P3, HUFA75332S3S 75332S

    75332P3

    Abstract: 75332S3 75332G3 huf75332G3
    Text: HUF75332G3, HUF75332P3, 75332S3, 75332S3S HARRIS S E M I C O N D U C T O R 52A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs March 1998 Features ^ • 5 2 A ,5 5 V M • Ultra Low On-Resistance, ros ON = Description These N-Channel power M OS­


    OCR Scan     		PDF HUF75332G3, HUF75332P3, HUF75332S3, HUF75332S3S TB334, 1-800-4-HARRIS 75332P3 75332S3 75332G3 huf75332G3

    75332P

    Abstract: 75332S 75332G Saber Relay
    Text: i n t e r s HUF75332G3, HUF75332P3, 75332S3S i l J u n e 1999 D a ta S h e e t 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology


    OCR Scan     		PDF HUF75332G3, HUF75332P3, HUF75332S3S AN7254 AN7260. 75332P 75332S 75332G Saber Relay

    75332s

    Abstract: No abstract text available
    Text: inter«! HUF75332G3, HUF75332P3, 75332S3S Data Sheet June 1999 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs Ultras Th e se N -C hannel pow e r M O S F E Ts are m anu facture d u sing the innovative U ltraFET process. T h is a dvanced proce ss te ch n olo gy


    OCR Scan     		PDF HUF75332G3, HUF75332P3, HUF75332S3S AN7254 AN7260. 75332s

    75332S3

    Abstract: 75332P3
    Text: HUF75332G3, HUF75332P3, 75332S3, 75332S3S Semiconductor Data Sheet 52A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs . ? These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75332G3, HUF75332P3, HUF75332S3, HUF75332S3S O-263AB O-263AB 75332S3 75332P3