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    HUF75332S3ST Search Results

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    HUF75332S3ST Price and Stock

    onsemi HUF75332S3ST

    MOSFET N-CH 55V 60A D2PAK
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    DigiKey HUF75332S3ST Reel
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    Rochester Electronics LLC HUF75332S3ST

    MOSFET N-CH 55V 52A D2PAK
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    DigiKey HUF75332S3ST Bulk 386
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    Fairchild Semiconductor Corporation HUF75332S3ST

    HUF75332 - N-Channel, ULTRAFET POWER MOSFET '
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    Rochester Electronics HUF75332S3ST 23,990 1
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    ComSIT USA HUF75332S3ST 670
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    Harris Semiconductor HUF75332S3ST

    HUF75332 - N-Channel, ULTRAFET POWER MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics HUF75332S3ST 2,400 1
    • 1 $0.7476
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    • 100 $0.7027
    • 1000 $0.6355
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    HUF75332S3ST Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HUF75332S3ST Fairchild Semiconductor 60 A, 55 V, 0.019 ohm, N-Channel UltraFET Power MOSFET Original PDF
    HUF75332S3ST Fairchild Semiconductor 55V N-Channel UltraFET Power MOSFET Original PDF
    HUF75332S3ST Intersil MOSFET, Enhancement, N Channel, 55V, TO-263, 3-Pin Original PDF
    HUF75332S3S/T Toshiba Power MOSFETs Cross Reference Guide Original PDF

    HUF75332S3ST Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HUF75332P3

    Abstract: 75332 75332P 75332S HUF75332G3 HUF75332S3S HUF75332S3ST TB334
    Text: HUF75332G3, HUF75332P3, HUF75332S3S Data Sheet June 1999 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75332G3, HUF75332P3, HUF75332S3S HUF75332P3 75332 75332P 75332S HUF75332G3 HUF75332S3S HUF75332S3ST TB334

    75332P

    Abstract: 75332 75332S fairchild 75332s 1e9A HUF75332G3 HUF75332P3 HUF75332S3S HUF75332S3ST TB334
    Text: HUF75332G3, HUF75332P3, HUF75332S3S Data Sheet January 2005 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75332G3, HUF75332P3, HUF75332S3S 75332P 75332 75332S fairchild 75332s 1e9A HUF75332G3 HUF75332P3 HUF75332S3S HUF75332S3ST TB334

    HRF3205 equivalent

    Abstract: HUF75343S3 RFP70N06 100C BUZ11 HUF75344P3 HUF75329D3ST RFD16N05LSM9A
    Text: Date Created: 3/29/2004 Date Issued: 4/6/2004 PCN # 20041001-A DESIGN/PROCESS CHANGE NOTIFICATION - FINAL Reference FCST PCN number 20030402-A. This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


    Original     		PDF 0041001-A 0030402-A. RFD14N05 RFD14N05LSM9A RFD16N05 RFD16N05SM RFD3055LE RFD3055SM RFG70N06 RFP45N06 HRF3205 equivalent HUF75343S3 RFP70N06 100C BUZ11 HUF75344P3 HUF75329D3ST RFD16N05LSM9A

    Untitled

    Abstract: No abstract text available
    Text: HUF75332G3, HUF75332P3, HUF75332S3S Data Sheet January 2005 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75332G3, HUF75332P3, HUF75332S3S

    75332P

    Abstract: fairchild 75332s 75332S HUF75332G3 HUF75332P3 HUF75332S3S HUF75332S3ST TB334
    Text: HUF75332G3, HUF75332P3, HUF75332S3S Data Sheet December 2001 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75332G3, HUF75332P3, HUF75332S3S 75332P fairchild 75332s 75332S HUF75332G3 HUF75332P3 HUF75332S3S HUF75332S3ST TB334

    rh-24v

    Abstract: JESD22-A105 a105 transistor HUF75309D3ST HRF3205 equivalent JESD22-A110 RFD3055LESM9A rfp70n06 transistor a105 100C
    Text: Date Created: 2/24/2004 Date Issued: 4/8/2004 PCN # 20040802 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will


    Original     		PDF RFG70N06 RFP45N06 HRF3205 HUF75307D3ST HUF75309D3S HUF75309T3ST HUF75321D3ST HUF75321S3ST R4908 HUF75329D3ST rh-24v JESD22-A105 a105 transistor HUF75309D3ST HRF3205 equivalent JESD22-A110 RFD3055LESM9A rfp70n06 transistor a105 100C

    HUF75309D3ST

    Abstract: HRF3205 equivalent RFD3055LESM9A RFP70N06 HUF75344P3 100C BUZ11 RFP50N06 RFD16N05LSM9A rfp50n06 reference
    Text: Date Created: 3/8/2004 Date Issued: 3/23/2004 PCN # 20041001 DESIGN/PROCESS CHANGE NOTIFICATION - FINAL Reference FCST PCN number 20030402-A. This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


    Original     		PDF 0030402-A. ClinF75345P3 HUF75345S3ST RFD14N05 RFD14N05LSM9A RFD16N05 RFD16N05SM RFD3055LE RFD3055SM RFG70N06 HUF75309D3ST HRF3205 equivalent RFD3055LESM9A RFP70N06 HUF75344P3 100C BUZ11 RFP50N06 RFD16N05LSM9A rfp50n06 reference

    12SnOFC

    Abstract: PMC-90 PMC-90 leadframe material 92.5Pb5Sn2.5Ag Tamac4 MKT-TO263A02 pmc90 PMC-90 to-263 RF1S640SM9A FDB2532
    Text: Date Created: 12/30/2003 Date Issued: 1/15/2004 PCN # 20040002 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will


    Original     		PDF fairchildF76143S3S HUF76145S3S HUF76419S3ST HUF76432S3S HUF76439S3S HUF76445S3ST HUF76639S3S HUF76645S3ST ISL9N303AS3 ISL9N306AS3ST 12SnOFC PMC-90 PMC-90 leadframe material 92.5Pb5Sn2.5Ag Tamac4 MKT-TO263A02 pmc90 PMC-90 to-263 RF1S640SM9A FDB2532

    75332p

    Abstract: 75332S 75332 HUF75332P3 75332G huf75332 HUF75332G3 HUF75332S3S HUF75332S3ST TB334
    Text: HUF75332G3, HUF75332P3, HUF75332S3S Data Sheet June 1999 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75332G3, HUF75332P3, HUF75332S3S 75332p 75332S 75332 HUF75332P3 75332G huf75332 HUF75332G3 HUF75332S3S HUF75332S3ST TB334

    75332P3

    Abstract: 75332S3 TO24 TA753 HUF75332P3 75332G3
    Text: HUF75332G3, HUF75332P3, HUF75332S3, HUF75332S3S S E M I C O N D U C T O R 52A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs March 1998 Features Description • 52A, 55V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in


    Original     		PDF HUF75332G3, HUF75332P3, HUF75332S3, HUF75332S3S 1-800-4-HARRIS 75332P3 75332S3 TO24 TA753 HUF75332P3 75332G3

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    75332P3

    Abstract: 75332S3 75332G3 huf75332G3
    Text: HUF75332G3, HUF75332P3, HUF75332S3, HUF75332S3S HARRIS S E M I C O N D U C T O R 52A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs March 1998 Features ^ • 5 2 A ,5 5 V M • Ultra Low On-Resistance, ros ON = Description These N-Channel power M OS­


    OCR Scan     		PDF HUF75332G3, HUF75332P3, HUF75332S3, HUF75332S3S TB334, 1-800-4-HARRIS 75332P3 75332S3 75332G3 huf75332G3

    Untitled

    Abstract: No abstract text available
    Text: HUF75332G3, HUF75332P3, HUF75332S3S Semiconductor Data Sheet June 1999 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75332G3, HUF75332P3, HUF75332S3S 58e-2 HUF75332 00e-3 50e-3 85e-2

    75332P

    Abstract: 75332S 75332G Saber Relay
    Text: i n t e r s HUF75332G3, HUF75332P3, HUF75332S3S i l J u n e 1999 D a ta S h e e t 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology


    OCR Scan     		PDF HUF75332G3, HUF75332P3, HUF75332S3S AN7254 AN7260. 75332P 75332S 75332G Saber Relay

    75332S3

    Abstract: 75332P3
    Text: HUF75332G3, HUF75332P3, HUF75332S3, HUF75332S3S Semiconductor Data Sheet 52A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs . ? These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75332G3, HUF75332P3, HUF75332S3, HUF75332S3S O-263AB O-263AB 75332S3 75332P3