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    HUF75329D3ST Search Results

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    HUF75329D3ST Price and Stock

    onsemi HUF75329D3ST

    MOSFET N-CH 55V 20A TO252AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HUF75329D3ST Cut Tape 2,483 1
    • 1 $1.61
    • 10 $1.024
    • 100 $0.685
    • 1000 $0.49244
    • 10000 $0.49244
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    HUF75329D3ST Digi-Reel 1
    • 1 $1.61
    • 10 $1.024
    • 100 $0.685
    • 1000 $0.49244
    • 10000 $0.49244
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    HUF75329D3ST Reel 2,500
    • 1 -
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    • 10000 $0.404
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    Avnet Americas HUF75329D3ST Reel 4 Weeks 1
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    HUF75329D3ST Reel 16 Weeks 2,500
    • 1 -
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    • 10000 $0.39906
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    Mouser Electronics HUF75329D3ST 4,617
    • 1 $0.97
    • 10 $0.791
    • 100 $0.664
    • 1000 $0.473
    • 10000 $0.404
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    Newark HUF75329D3ST Cut Tape 2,500
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    • 1000 $0.63
    • 10000 $0.63
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    HUF75329D3ST Reel 2,500
    • 1 $0.556
    • 10 $0.556
    • 100 $0.556
    • 1000 $0.556
    • 10000 $0.485
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    Future Electronics HUF75329D3ST Reel 6 Weeks 2,500
    • 1 -
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    • 10000 $0.405
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    HUF75329D3ST Reel 16 Weeks 2,500
    • 1 -
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    Onlinecomponents.com HUF75329D3ST
    • 1 -
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    • 10000 $0.4003
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    Rochester Electronics HUF75329D3ST 208 1
    • 1 $0.4713
    • 10 $0.4713
    • 100 $0.443
    • 1000 $0.4006
    • 10000 $0.4006
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    Richardson RFPD HUF75329D3ST 2,500
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    • 10000 $0.4
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    Avnet Silica HUF75329D3ST 15,000 17 Weeks 2,500
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    EBV Elektronik HUF75329D3ST 18 Weeks 2,500
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    New Advantage Corporation HUF75329D3ST 12,500 1
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    • 10000 $0.6788
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    Fairchild Semiconductor Corporation HUF75329D3ST

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    Bristol Electronics HUF75329D3ST 4,665
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    HUF75329D3ST 1,326
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    Quest Components HUF75329D3ST 1,828
    • 1 $2
    • 10 $2
    • 100 $2
    • 1000 $0.8
    • 10000 $0.7
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    HUF75329D3ST 1,060
    • 1 $2.4
    • 10 $2.4
    • 100 $2.4
    • 1000 $0.84
    • 10000 $0.84
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    Chip 1 Exchange HUF75329D3ST 6,281
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    HUF75329D3ST Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    HUF75329D3ST Fairchild Semiconductor 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFET Original PDF
    HUF75329D3ST Fairchild Semiconductor 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs Original PDF
    HUF75329D3S/T Toshiba Power MOSFETs Cross Reference Guide Original PDF
    HUF75329D3ST_NL Fairchild Semiconductor 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs Original PDF

    HUF75329D3ST Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    75329D

    Abstract: AN9321 HUF75329D3 HUF75329D3S HUF75329D3ST TB334
    Text: HUF75329D3, HUF75329D3S Data Sheet 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75329D3, HUF75329D3S 75329D AN9321 HUF75329D3 HUF75329D3S HUF75329D3ST TB334

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


    Original     		PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    HRF3205 equivalent

    Abstract: HUF75343S3 RFP70N06 100C BUZ11 HUF75344P3 HUF75329D3ST RFD16N05LSM9A
    Text: Date Created: 3/29/2004 Date Issued: 4/6/2004 PCN # 20041001-A DESIGN/PROCESS CHANGE NOTIFICATION - FINAL Reference FCST PCN number 20030402-A. This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


    Original     		PDF 0041001-A 0030402-A. RFD14N05 RFD14N05LSM9A RFD16N05 RFD16N05SM RFD3055LE RFD3055SM RFG70N06 RFP45N06 HRF3205 equivalent HUF75343S3 RFP70N06 100C BUZ11 HUF75344P3 HUF75329D3ST RFD16N05LSM9A

    rh-24v

    Abstract: JESD22-A105 a105 transistor HUF75309D3ST HRF3205 equivalent JESD22-A110 RFD3055LESM9A rfp70n06 transistor a105 100C
    Text: Date Created: 2/24/2004 Date Issued: 4/8/2004 PCN # 20040802 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will


    Original     		PDF RFG70N06 RFP45N06 HRF3205 HUF75307D3ST HUF75309D3S HUF75309T3ST HUF75321D3ST HUF75321S3ST R4908 HUF75329D3ST rh-24v JESD22-A105 a105 transistor HUF75309D3ST HRF3205 equivalent JESD22-A110 RFD3055LESM9A rfp70n06 transistor a105 100C

    HUF75309D3ST

    Abstract: HRF3205 equivalent RFD3055LESM9A RFP70N06 HUF75344P3 100C BUZ11 RFP50N06 RFD16N05LSM9A rfp50n06 reference
    Text: Date Created: 3/8/2004 Date Issued: 3/23/2004 PCN # 20041001 DESIGN/PROCESS CHANGE NOTIFICATION - FINAL Reference FCST PCN number 20030402-A. This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


    Original     		PDF 0030402-A. ClinF75345P3 HUF75345S3ST RFD14N05 RFD14N05LSM9A RFD16N05 RFD16N05SM RFD3055LE RFD3055SM RFG70N06 HUF75309D3ST HRF3205 equivalent RFD3055LESM9A RFP70N06 HUF75344P3 100C BUZ11 RFP50N06 RFD16N05LSM9A rfp50n06 reference

    75329D

    Abstract: AN9321 HUF75329D3 HUF75329D3S HUF75329D3ST TB334
    Text: HUF75329D3, HUF75329D3S Data Sheet 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75329D3, HUF75329D3S 75329D AN9321 HUF75329D3 HUF75329D3S HUF75329D3ST TB334

    Untitled

    Abstract: No abstract text available
    Text: HUF75329D3S October 2013 Data Sheet N-Channel UltraFET Power MOSFET 55 V, 20 A, 26 mΩ Features • 20A, 55V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding


    Original     		PDF HUF75329D3S HUF75329D3S

    DPAK JEDEC OUTLINE

    Abstract: 12SNOFC Tamac4 eme6600cs KFC 1/2H 90Pb10Sn ISL9N2357D3ST application notes ISL9N306AD TAMAC-4 fdd6512a
    Text: Date Created: 3/3/2004 Date Issued: 3/11/2004 PCN # 20033404-A DESIGN/PROCESS CHANGE NOTIFICATION - FINAL This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


    Original     		PDF 0033404-A fairchildsem419D3ST HUF76429D3S HUF76609D3S HUF76619D3S HUF76629D3S ISL9N306AD3 ISL9N308AD3 ISL9N310AD3ST ISL9N315AD3 DPAK JEDEC OUTLINE 12SNOFC Tamac4 eme6600cs KFC 1/2H 90Pb10Sn ISL9N2357D3ST application notes ISL9N306AD TAMAC-4 fdd6512a

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    75329D

    Abstract: HUF75329D3 AN9321 HUF75329D3S HUF75329D3ST TB334
    Text: HUF75329D3, HUF75329D3S Data Sheet 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75329D3, HUF75329D3S 71e-1 26e-2 HUF75329D 80e-3 00e-2 00e-3 60e-2 75329D HUF75329D3 AN9321 HUF75329D3S HUF75329D3ST TB334

    75329D

    Abstract: AN7254 AN9321 AN9322 HUF75329D3 HUF75329D3S HUF75329D3ST TB334 RELAY TC1
    Text: HUF75329D3, HUF75329D3S Data Sheet 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75329D3, HUF75329D3S 75329D AN7254 AN9321 AN9322 HUF75329D3 HUF75329D3S HUF75329D3ST TB334 RELAY TC1

    Untitled

    Abstract: No abstract text available
    Text: HUF75329D3, HUF75329D3S Semiconductor Data Sheet June 1999 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75329D3, HUF75329D3S 13e-1 26e-2 HUF75329D 80e-3 00e-2 00e-3 60e-2

    Untitled

    Abstract: No abstract text available
    Text: HUF75329D3, HUF75329D3S Semiconductor March 1999 Data Sheet 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75329D3, HUF75329D3S 57e-2 13e-1 26e-2 HUF75329D 80e-3 00e-2 00e-3

    75329d

    Abstract: TA75329 HUF75329D3
    Text: HUF75329D3, HUF75329D3S Semiconductor Data Sheet 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75329D3, HUF75329D3S TA7532HERM2 98e-2 57e-2 13e-1 26e-2 HUF75329D 80e-3 00e-2 75329d TA75329 HUF75329D3