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    HUF75309D3ST Search Results

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    HUF75309D3ST Price and Stock

    Harris Semiconductor HUF75309D3ST

    17A, 55V, 0.07OHM, N-CHANNEL, SI, POWER, MOSFET, TO-252AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components HUF75309D3ST 2,490
    • 1 $0.72
    • 10 $0.72
    • 100 $0.72
    • 1000 $0.3
    • 10000 $0.3
    		Buy Now

    Fairchild Semiconductor Corporation HUF75309D3ST_NL

    19A, 55V, 0.07ohm, N-Channel Power MOSFET, TO-252AA '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics HUF75309D3ST_NL 597 1
    • 1 $0.4117
    • 10 $0.4117
    • 100 $0.387
    • 1000 $0.3499
    • 10000 $0.3499
    		Buy Now

    HUF75309D3ST Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HUF75309D3ST Fairchild Semiconductor 19 A, 55 V, 0.070 ohm, N-Channel UltraFET Power MOSFET Original PDF
    HUF75309D3ST Intersil MOSFET, Enhancement, N Channel, 55V, TO-252, 3-Pin Original PDF
    HUF75309D3S/T Toshiba Power MOSFETs Cross Reference Guide Original PDF
    HUF75309D3ST_NL Fairchild Semiconductor 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs Original PDF

    HUF75309D3ST Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    HRF3205 equivalent

    Abstract: HUF75343S3 RFP70N06 100C BUZ11 HUF75344P3 HUF75329D3ST RFD16N05LSM9A
    Text: Date Created: 3/29/2004 Date Issued: 4/6/2004 PCN # 20041001-A DESIGN/PROCESS CHANGE NOTIFICATION - FINAL Reference FCST PCN number 20030402-A. This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


    Original     		0041001-A 0030402-A. RFD14N05 RFD14N05LSM9A RFD16N05 RFD16N05SM RFD3055LE RFD3055SM RFG70N06 RFP45N06 HRF3205 equivalent HUF75343S3 RFP70N06 100C BUZ11 HUF75344P3 HUF75329D3ST RFD16N05LSM9A PDF

    75309P

    Abstract: HUF75309D3 HUF75309D3S HUF75309D3ST HUF75309P3 TB334
    Text: HUF75309P3, HUF75309D3, HUF75309D3S Data Sheet December 2001 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		HUF75309P3, HUF75309D3, HUF75309D3S 75309P HUF75309D3 HUF75309D3S HUF75309D3ST HUF75309P3 TB334 PDF

    rh-24v

    Abstract: JESD22-A105 a105 transistor HUF75309D3ST HRF3205 equivalent JESD22-A110 RFD3055LESM9A rfp70n06 transistor a105 100C
    Text: Date Created: 2/24/2004 Date Issued: 4/8/2004 PCN # 20040802 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will


    Original     		RFG70N06 RFP45N06 HRF3205 HUF75307D3ST HUF75309D3S HUF75309T3ST HUF75321D3ST HUF75321S3ST R4908 HUF75329D3ST rh-24v JESD22-A105 a105 transistor HUF75309D3ST HRF3205 equivalent JESD22-A110 RFD3055LESM9A rfp70n06 transistor a105 100C PDF

    HUF75309D3ST

    Abstract: HRF3205 equivalent RFD3055LESM9A RFP70N06 HUF75344P3 100C BUZ11 RFP50N06 RFD16N05LSM9A rfp50n06 reference
    Text: Date Created: 3/8/2004 Date Issued: 3/23/2004 PCN # 20041001 DESIGN/PROCESS CHANGE NOTIFICATION - FINAL Reference FCST PCN number 20030402-A. This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


    Original     		0030402-A. ClinF75345P3 HUF75345S3ST RFD14N05 RFD14N05LSM9A RFD16N05 RFD16N05SM RFD3055LE RFD3055SM RFG70N06 HUF75309D3ST HRF3205 equivalent RFD3055LESM9A RFP70N06 HUF75344P3 100C BUZ11 RFP50N06 RFD16N05LSM9A rfp50n06 reference PDF

    DPAK JEDEC OUTLINE

    Abstract: 12SNOFC Tamac4 eme6600cs KFC 1/2H 90Pb10Sn ISL9N2357D3ST application notes ISL9N306AD TAMAC-4 fdd6512a
    Text: Date Created: 3/3/2004 Date Issued: 3/11/2004 PCN # 20033404-A DESIGN/PROCESS CHANGE NOTIFICATION - FINAL This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


    Original     		0033404-A fairchildsem419D3ST HUF76429D3S HUF76609D3S HUF76619D3S HUF76629D3S ISL9N306AD3 ISL9N308AD3 ISL9N310AD3ST ISL9N315AD3 DPAK JEDEC OUTLINE 12SNOFC Tamac4 eme6600cs KFC 1/2H 90Pb10Sn ISL9N2357D3ST application notes ISL9N306AD TAMAC-4 fdd6512a PDF

    75309P

    Abstract: 75309d AN9321 HUF75309D3 HUF75309D3S HUF75309D3ST HUF75309P3 TB334 317E-10 431E-6
    Text: HUF75309P3, HUF75309D3, HUF75309D3S Data Sheet June 1999 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		HUF75309P3, HUF75309D3, HUF75309D3S 43oducts 75309P 75309d AN9321 HUF75309D3 HUF75309D3S HUF75309D3ST HUF75309P3 TB334 317E-10 431E-6 PDF

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note PDF

    75309P

    Abstract: HUF75309D3 HUF75309D3S HUF75309D3ST HUF75309P3 TB334
    Text: HUF75309P3, HUF75309D3, HUF75309D3S S E M I C O N D U C T O R 17A, 55V, 0.070 Ohm, N-Channel, UltraFET Power MOSFETs February 1998 Features Description • 17A, 55V • Ultra Low On-Resistance, rDS ON = 0.070Ω • Diode Exhibits Both High Speed and Soft Recovery


    Original     		HUF75309P3, HUF75309D3, HUF75309D3S TB334, HUF75309 1-800-4-HARRIS 75309P HUF75309D3 HUF75309D3S HUF75309D3ST HUF75309P3 TB334 PDF

    75309P

    Abstract: HUF75309D3 HUF75309D3S HUF75309D3ST HUF75309P3 TB334
    Text: HUF75309P3, HUF75309D3, HUF75309D3S Data Sheet June 1999 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		HUF75309P3, HUF75309D3, HUF75309D3S 75309P HUF75309D3 HUF75309D3S HUF75309D3ST HUF75309P3 TB334 PDF

    75309P

    Abstract: AN9321 HUF75309D3 HUF75309D3S HUF75309D3ST HUF75309P3
    Text: HUF75309P3, HUF75309D3, HUF75309D3S S E M I C O N D U C T O R 17A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs August 1997 Features Description • 17A, 55V The HUF75309 N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced


    Original     		HUF75309P3, HUF75309D3, HUF75309D3S HUF75309 1-800-4-HARRIS 75309P AN9321 HUF75309D3 HUF75309D3S HUF75309D3ST HUF75309P3 PDF

    75309P

    Abstract: TA75309
    Text: HUF75309P3, HUF75309D3, HUF75309D3S HARRIS S E M I C O N D U C T O R 17A, 55V, 0.070 Ohm, N-Channel, UltraFET Power MOSFETs February 1998 MM Features • 17A, 55V • Ultra Low On-Resistance, ros ON = 0-070i2 • Diode Exhibits Both High Speed and Soft Recovery


    OCR Scan     		HUF75309P3, HUF75309D3, HUF75309D3S 0-070i2 TB334, HUF75309 75309P TA75309 PDF

    TL 431 model SPICE

    Abstract: Simulation Model tl 431
    Text: HUF75309P3, HUF75309D3, HUF75309D3S Semiconductor June 1999 Data Sheet 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		HUF75309P3, HUF75309D3, HUF75309D3S HUF75309 TL 431 model SPICE Simulation Model tl 431 PDF

    75309P

    Abstract: No abstract text available
    Text: HUF75309P3, HUF75309D3, HUF75309D3S integri! D a ta S h e e t Ju n e 1999 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power M O S F E Ts are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		HUF75309P3, HUF75309D3, HUF75309D3S por19A AN7254 AN7260. 75309P PDF

    Diode LT n5

    Abstract: No abstract text available
    Text: HUF75309P3, HUF75309D3, HUF75309D3S S em iconductor Data Sheet June 1999 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. " This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		HUF75309P3, HUF75309D3, HUF75309D3S HUF75309 Diode LT n5 PDF