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    75329D Search Results

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    75329D Price and Stock

    Rochester Electronics LLC HUFA75329D3

    MOSFET N-CH 55V 20A IPAK
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    DigiKey HUFA75329D3 Tube 3,600 417
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    • 1000 $0.72
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    Rochester Electronics LLC HUF75329D3S

    MOSFET N-CH 55V 20A TO252AA
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    DigiKey HUF75329D3S Tube 3,075 314
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    • 1000 $0.96
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    onsemi HUF75329D3ST

    MOSFET N-CH 55V 20A TO252AA
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    DigiKey HUF75329D3ST Cut Tape 2,483 1
    • 1 $1.28
    • 10 $0.862
    • 100 $1.28
    • 1000 $0.44758
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    HUF75329D3ST Digi-Reel 2,483 1
    • 1 $1.28
    • 10 $0.862
    • 100 $1.28
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    HUF75329D3ST Reel 2,500
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    • 10000 $0.404
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    Avnet Americas HUF75329D3ST Reel 16 Weeks 2,500
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    • 10000 $0.38476
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    Mouser Electronics HUF75329D3ST 4,592
    • 1 $0.93
    • 10 $0.741
    • 100 $0.603
    • 1000 $0.448
    • 10000 $0.404
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    Newark HUF75329D3ST Reel 2,500
    • 1 $0.556
    • 10 $0.556
    • 100 $0.556
    • 1000 $0.556
    • 10000 $0.485
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    HUF75329D3ST Cut Tape 2,500
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    • 1000 $0.63
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    Bristol Electronics HUF75329D3ST 38
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    Rochester Electronics HUF75329D3ST 208 1
    • 1 $0.4489
    • 10 $0.4489
    • 100 $0.422
    • 1000 $0.3816
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    Richardson RFPD HUF75329D3ST 2,500
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    Avnet Silica HUF75329D3ST 15,000 17 Weeks 2,500
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    EBV Elektronik HUF75329D3ST 18 Weeks 2,500
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    New Advantage Corporation HUF75329D3ST 12,500 1
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    • 10000 $0.6788
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    Rochester Electronics LLC HUF75329D3

    MOSFET N-CH 55V 20A IPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HUF75329D3 Tube 1,792 452
    • 1 -
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    • 1000 $0.66
    • 10000 $0.66
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    onsemi HUF75329D3S

    MOSFET N-CH 55V 20A TO252AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HUF75329D3S Tube
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    75329D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    75329D

    Abstract: AN9321 HUF75329D3 HUF75329D3S HUF75329D3ST TB334
    Text: 75329D3, 75329D3S Data Sheet 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75329D3, HUF75329D3S 75329D AN9321 HUF75329D3 HUF75329D3S HUF75329D3ST TB334

    75329D

    Abstract: AN9321 HUF75329D3 HUF75329D3S HUF75329D3ST TB334
    Text: 75329D3, 75329D3S Data Sheet 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75329D3, HUF75329D3S 75329D AN9321 HUF75329D3 HUF75329D3S HUF75329D3ST TB334

    Untitled

    Abstract: No abstract text available
    Text: 75329D3S October 2013 Data Sheet N-Channel UltraFET Power MOSFET 55 V, 20 A, 26 mΩ Features • 20A, 55V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding


    Original     		PDF HUF75329D3S HUF75329D3S

    Untitled

    Abstract: No abstract text available
    Text: 75329D3, 75329D3S TM Data Sheet 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUFA75329D3, HUFA75329D3S

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    75329D

    Abstract: HUF75329D3 AN9321 HUF75329D3S HUF75329D3ST TB334
    Text: 75329D3, 75329D3S Data Sheet 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75329D3, HUF75329D3S 71e-1 26e-2 HUF75329D 80e-3 00e-2 00e-3 60e-2 75329D HUF75329D3 AN9321 HUF75329D3S HUF75329D3ST TB334

    75329D

    Abstract: AN7254 AN9321 AN9322 HUF75329D3 HUF75329D3S HUF75329D3ST TB334 RELAY TC1
    Text: 75329D3, 75329D3S Data Sheet 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75329D3, HUF75329D3S 75329D AN7254 AN9321 AN9322 HUF75329D3 HUF75329D3S HUF75329D3ST TB334 RELAY TC1

    HUFA75329D3ST

    Abstract: TB334 75329D AN9321 AN9322 HUFA75329D3 HUFA75329D3S relay 6v 200 ohm
    Text: 75329D3, 75329D3S Data Sheet 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUFA75329D3, HUFA75329D3S HUFA75329D3ST TB334 75329D AN9321 AN9322 HUFA75329D3 HUFA75329D3S relay 6v 200 ohm

    Untitled

    Abstract: No abstract text available
    Text: 75329D3, 75329D3S Semiconductor Data Sheet June 1999 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75329D3, HUF75329D3S 13e-1 26e-2 HUF75329D 80e-3 00e-2 00e-3 60e-2

    Untitled

    Abstract: No abstract text available
    Text: 75329D3, 75329D3S Semiconductor March 1999 Data Sheet 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75329D3, HUF75329D3S 57e-2 13e-1 26e-2 HUF75329D 80e-3 00e-2 00e-3

    75329d

    Abstract: TA75329 HUF75329D3
    Text: 75329D3, 75329D3S Semiconductor Data Sheet 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75329D3, HUF75329D3S TA7532HERM2 98e-2 57e-2 13e-1 26e-2 HUF75329D 80e-3 00e-2 75329d TA75329 HUF75329D3

    75329d

    Abstract: No abstract text available
    Text: intelai I 75329D3, 75329D3S Data S heet 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75329D3, HUF75329D3S AN7254 AN7260. 75329d