Untitled
Abstract: No abstract text available
Text: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and
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CGH40006P
CGH40006P
CGH40006P,
CGH40
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CGH40006P-TB
Abstract: RO5880 006P CGH40006P JESD22 CGH40006
Text: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and
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CGH40006P
CGH40006P
CGH40006P,
CGH40
CGH40006P-TB
RO5880
006P
JESD22
CGH40006
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CGH40006
Abstract: f 14019 amplifier CGH40006P-TB transistor j352 cgh40006p 006P RO5880 J352 16649
Text: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and
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Original
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CGH40006P
CGH40006
CGH40006,
CGH40
f 14019 amplifier
CGH40006P-TB
transistor j352
cgh40006p
006P
RO5880
J352
16649
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Untitled
Abstract: No abstract text available
Text: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and
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Original
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CGH40006P
CGH40006P
CGH40006P,
CGH40
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PDF
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Untitled
Abstract: No abstract text available
Text: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and
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Original
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CGH40006P
CGH40006P
CGH40006P,
CGH40
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PDF
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CGH40006P
Abstract: 1878 TRANSISTOR RO5880 CGH4000 CGH40006P-TB
Text: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and
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Original
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CGH40006P
CGH40006P
CGH40006P,
CGH40
1878 TRANSISTOR
RO5880
CGH4000
CGH40006P-TB
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PDF
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cgh40006p
Abstract: RO5880 J427 CGH40006P-TB Cree Microwave 006P JESD22 1878 TRANSISTOR
Text: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and
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Original
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CGH40006P
CGH40006P
CGH40006P,
CGH40
RO5880
J427
CGH40006P-TB
Cree Microwave
006P
JESD22
1878 TRANSISTOR
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PDF
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PMN32UN
Abstract: PMN34UN PMN23UN PMN27UN PMN28UN PMN34LN PMN40LN
Text: iT r e n c h M O S TSOP6î!t*tKJ30V ' 20VPI12V NSSMOSFETS «HISfflKJfrflif1?! m m m m \ ’ ÎIJ f f lf R ÎIJ « f f i|IJ f f W T r e n c h g « f f lîÎS Îi/ jN { b ^ f f l0 ^ M ^ 't g t i . m m m » 'm ° (iT iw ic h M o s s f R fiM W f fM a m îm
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OCR Scan
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OT23W7
-TSOP6itSifSOT23MDn^
Mffi94%
OT23W90
tStEJ30V
20VISI12V
7feilffiWMTSOP6iiSW30V
PMN34UN
PMN40LN
PMN34LN
PMN32UN
PMN23UN
PMN27UN
PMN28UN
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PDF
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P02DP
Abstract: No abstract text available
Text: General Purpose Operational Amplifier CORPORATION 0P-02 FEATURES DESCRIPTION • • • • The OP-02 is a general purpose, internally frequency compensated, high-performance operational amplifier. The device is pin-for-pin compatible with the industry standard 741
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OCR Scan
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0P-02
OP-02
100Hz
1000Hz
1000Hz
20VPi3
P02DP
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PDF
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2SC5069
Abstract: VEBO-15V 2038a
Text: Ordering n u m b e r:E N 4 5 0 9 No.4509 _ 2SC5069 NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amp, Driver Applications I F e a tu re s •High C urrent Capacity. • Adoption of MBIT process. • High DC current gain.
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OCR Scan
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EN4509
2SC5069
250mm2
2SC5069
VEBO-15V
2038a
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PDF
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LM373
Abstract: pin for lm 339 ic LM1805 LM375 LM566 equivalent LX1604G LM3066 lm374 lm567 equivalent LM1820
Text: Introduction Here is the new Linear Data Handbook from National. It gives complete specifications for devices useful in building nearly all types of electronic systems, from communica tions and consumer-oriented circuits to precision instrumentation and computer designs.
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PDF
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2N2369 AVALANCHE PULSE GENERATOR
Abstract: 2n3054 JEC 600 watts amplifier schematic diagram Germanium drift transistor LM373 AN6311 germanium transistor transitron LM304 AN2918
Text: National PREFACE The purpose of this handbook is to provide a fully indexed and cross-referenced collection of linear in tegrated circuit applications using both monolithic and hybrid circuits from National Semiconductor. Individual application notes are normally written to ex
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OCR Scan
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LB20-2
2N2369 AVALANCHE PULSE GENERATOR
2n3054
JEC 600 watts amplifier schematic diagram
Germanium drift transistor
LM373
AN6311
germanium transistor
transitron
LM304
AN2918
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PDF
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2VN 211
Abstract: MAX502Bcng
Text: 19-4011; R e v ft 9/91 A A Æ A X J V K Voltage-Output, 12-B it M ultiplying DACs T he M AX501/M AX502 are 12-bit, 4 -q u a d ran t, voltageo u tp u t, m u ltip ly in g d ig ita l-to -a n a lo g converters DACs w ith an o u tp u t am plifier. T h in -film resistors, laser
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OCR Scan
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AX501/M
AX502
12-bit,
MAX501)
AX502)
MAX501,
MAX502BMRG
2VN 211
MAX502Bcng
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