BGF901-20
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF901-20 GSM900 EDGE power module Product specification 2003 Jun 13 Philips Semiconductors Product specification GSM900 EDGE power module BGF901-20 PINNING - SOT365C FEATURES • Typical GSM EDGE performance at a supply voltage of
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M3D737
BGF901-20
GSM900
SCA75
613524/01/pp12
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PDF
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Untitled
Abstract: No abstract text available
Text: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and
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CGH40006P
CGH40006P
CGH40006P,
CGH40
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PDF
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BGF844
Abstract: SR200 SR400 SR600 smd INCOMING INSPECTION procedure
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF844 GSM800 EDGE power module Product specification Supersedes data of 2002 Nov 12 2003 Feb 26 Philips Semiconductors Product specification GSM800 EDGE power module BGF844 FEATURES PINNING - SOT365C • Typical GSM EDGE performance at a supply voltage of
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Original
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M3D737
BGF844
GSM800
OT365C
SCA75
613524/06/pp12
BGF844
SR200
SR400
SR600
smd INCOMING INSPECTION procedure
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PDF
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CGH40006P-TB
Abstract: RO5880 006P CGH40006P JESD22 CGH40006
Text: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and
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Original
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CGH40006P
CGH40006P
CGH40006P,
CGH40
CGH40006P-TB
RO5880
006P
JESD22
CGH40006
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PDF
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thermal compound wps II
Abstract: thermal compound wps philips resistor 2322-195 austerlitz heatsink catalogue transistor 6 pin SMD Z2 transistor SMD Z2 BGF1901-10 GSM1900 SR200
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF1901-10 GSM1900 EDGE power module Product specification Supersedes data of 2003 Nov 17 2004 Oct 11 Philips Semiconductors Product specification GSM1900 EDGE power module BGF1901-10 FEATURES PINNING - SOT365C • Typical GSM EDGE performance at a supply voltage of
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Original
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M3D737
BGF1901-10
GSM1900
OT365C
SCA76
R02/02/pp11
thermal compound wps II
thermal compound wps
philips resistor 2322-195
austerlitz
heatsink catalogue
transistor 6 pin SMD Z2
transistor SMD Z2
BGF1901-10
SR200
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PDF
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thermal compound wps II
Abstract: BGF944 GSM900 SR200 SR400 RO5880 MBL813 gp 940
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF944 GSM900 EDGE power module Product specification Supersedes data of 2003 Feb 26 2003 Jun 06 Philips Semiconductors Product specification GSM900 EDGE power module BGF944 PINNING - SOT365C FEATURES • Typical GSM EDGE performance at a supply voltage of
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Original
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M3D737
BGF944
GSM900
OT365C
SCA75
613524/07/pp12
thermal compound wps II
BGF944
SR200
SR400
RO5880
MBL813
gp 940
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PDF
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CGH40006
Abstract: f 14019 amplifier CGH40006P-TB transistor j352 cgh40006p 006P RO5880 J352 16649
Text: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and
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Original
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CGH40006P
CGH40006
CGH40006,
CGH40
f 14019 amplifier
CGH40006P-TB
transistor j352
cgh40006p
006P
RO5880
J352
16649
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PDF
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Untitled
Abstract: No abstract text available
Text: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and
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Original
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CGH40006P
CGH40006P
CGH40006P,
CGH40
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PDF
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RO5880
Abstract: rf amplifier marking catalog smd top marking code 940 smd trans. Z2
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF944 GSM900 EDGE power module Product specification Supersedes data of 2002 Nov 12 2003 Feb 26 Philips Semiconductors Product specification GSM900 EDGE power module BGF944 PINNING - SOT365C FEATURES • Typical GSM EDGE performance at a supply voltage of
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Original
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M3D737
BGF944
GSM900
15-Aug-02)
RO5880
rf amplifier marking catalog
smd top marking code 940
smd trans. Z2
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PDF
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thermal compound wps II
Abstract: BGF1901-10 thermal compound wps GSM1900 SR200 SR400 RO5880
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF1901-10 GSM1900 EDGE power module Product specification 2003 Nov 17 Philips Semiconductors Product specification GSM1900 EDGE power module BGF1901-10 FEATURES PINNING - SOT365C • Typical GSM EDGE performance at a supply voltage of
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Original
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M3D737
BGF1901-10
GSM1900
OT365C
SCA75
7p/01/pp11
thermal compound wps II
BGF1901-10
thermal compound wps
SR200
SR400
RO5880
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PDF
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MLE340
Abstract: thermal compound wps II SR200 SR400 BGF1801-10 GSM1800
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF1801-10 GSM1800 EDGE power module Product specification 2003 Dec 15 Philips Semiconductors Product specification GSM1800 EDGE power module BGF1801-10 PINNING - SOT365C FEATURES • Typical GSM EDGE performance at a supply voltage of
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M3D737
BGF1801-10
GSM1800
OT365C
SCA75
R77/01/pp11
MLE340
thermal compound wps II
SR200
SR400
BGF1801-10
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PDF
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ACPR750
Abstract: BGF802-20 CDMA800
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF802-20 CDMA800 power module Product specification Supersedes data of 2003 Jun 13 2005 Jun 03 Philips Semiconductors Product specification CDMA800 power module BGF802-20 FEATURES PINNING - SOT365C • Typical CDMA IS95 performance at a supply voltage of
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M3D737
BGF802-20
CDMA800
OT365C
SCA76
R02/06/pp12
ACPR750
BGF802-20
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PDF
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BGF944
Abstract: GSM900 SR200 SR400
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF944 GSM900 EDGE power module Product specification Supersedes data of 2002 Nov 12 2003 Feb 26 Philips Semiconductors Product specification GSM900 EDGE power module BGF944 PINNING - SOT365C FEATURES • Typical GSM EDGE performance at a supply voltage of
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Original
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M3D737
BGF944
GSM900
OT365C
SCA75
613524/06/pp12
BGF944
SR200
SR400
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PDF
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Untitled
Abstract: No abstract text available
Text: CGH40006S 6 W, RF Power GaN HEMT, Plastic Cree’s CGH40006S is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006S, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave
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CGH40006S
CGH40006S
CGH40006S,
CGH40
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PDF
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Untitled
Abstract: No abstract text available
Text: CGH40006S 6 W, RF Power GaN HEMT, Plastic Cree’s CGH40006S is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006S, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave
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Original
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CGH40006S
CGH40006S
CGH40006S,
CGH40
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PDF
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PHILIPS 4330 030 36300
Abstract: philips ceramic capacitors philips ferroxcube BGY1816 BP317 RO5880
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D167 BGY1816 UHF amplifier module Product specification Supersedes data of 1998 May 27 2000 Oct 17 Philips Semiconductors Product specification UHF amplifier module BGY1816 FEATURES PINNING - SOT365A
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M3D167
BGY1816
OT365A
BGY1816
OT365A
613524/07/pp12
PHILIPS 4330 030 36300
philips ceramic capacitors
philips ferroxcube
BP317
RO5880
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PDF
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D167 BGY2016 UHF amplifier module Product specification Supersedes data of 2000 Jan 04 2000 Oct 17 Philips Semiconductors Product specification UHF amplifier module BGY2016 FEATURES PINNING - SOT365A
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M3D167
BGY2016
OT365A
BGY2016
OT365A
613524/04/pp12
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PDF
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thermal compound wps II
Abstract: austerlitz ACPR750 BGF802-20 CDMA800 RO5880 MBL257
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF802-20 CDMA800 power module Product specification Supersedes data of 2003 Feb 24 2003 Jun 13 Philips Semiconductors Product specification CDMA800 power module BGF802-20 FEATURES PINNING - SOT365C • Typical CDMA IS95 performance at a supply voltage of
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Original
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M3D737
BGF802-20
CDMA800
OT365C
SCA75
613524/05/pp12
thermal compound wps II
austerlitz
ACPR750
BGF802-20
RO5880
MBL257
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PDF
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thermal compound wps II
Abstract: austerlitz BGF844 SR200 SR400 SR600
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF844 GSM800 EDGE power module Product specification Supersedes data of 2003 Feb 26 2003 Jun 06 Philips Semiconductors Product specification GSM800 EDGE power module BGF844 FEATURES PINNING - SOT365C • Typical GSM EDGE performance at a supply voltage of
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Original
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M3D737
BGF844
GSM800
OT365C
SCA75
613524/07/pp12
thermal compound wps II
austerlitz
BGF844
SR200
SR400
SR600
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PDF
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Untitled
Abstract: No abstract text available
Text: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and
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Original
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CGH40006P
CGH40006P
CGH40006P,
CGH40
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PDF
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PHILIPS 4330 030 36300
Abstract: philips ceramic capacitors philips ELECTROLYTIC capacitors philips ferroxcube philips resistor 2322-195 BGY1816S BP317 RO5880
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D388 BGY1816S UHF amplifier module Product specification Supersedes data of 1999 Apr 13 2000 Oct 17 Philips Semiconductors Product specification UHF amplifier module BGY1816S FEATURES PINNING - SOT501A
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Original
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M3D388
BGY1816S
OT501A
BGY1816S
OT501A
613524/04/pp12
PHILIPS 4330 030 36300
philips ceramic capacitors
philips ELECTROLYTIC capacitors
philips ferroxcube
philips resistor 2322-195
BP317
RO5880
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PDF
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CGH40006P
Abstract: 1878 TRANSISTOR RO5880 CGH4000 CGH40006P-TB
Text: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and
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Original
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CGH40006P
CGH40006P
CGH40006P,
CGH40
1878 TRANSISTOR
RO5880
CGH4000
CGH40006P-TB
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PDF
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RO5880
Abstract: BGY1916 BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D167 BGY1916 UHF amplifier module Product specification Supersedes data of 1998 May 27 2000 Oct 17 Philips Semiconductors Product specification UHF amplifier module BGY1916 FEATURES PINNING - SOT365A
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Original
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M3D167
BGY1916
OT365A
BGY1916
OT365A
613524/05/pp12
RO5880
BP317
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PDF
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BGF802-20
Abstract: ACPR750 CDMA800
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF802-20 CDMA800 power module Product specification Supersedes data of 2002 Nov 12 2003 Feb 24 Philips Semiconductors Product specification CDMA800 power module BGF802-20 FEATURES PINNING - SOT365C • Typical CDMA IS95 performance at a supply voltage of
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Original
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M3D737
BGF802-20
CDMA800
OT365C
SCA75
613524/04/pp12
BGF802-20
ACPR750
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PDF
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