BGF901-20
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF901-20 GSM900 EDGE power module Product specification 2003 Jun 13 Philips Semiconductors Product specification GSM900 EDGE power module BGF901-20 PINNING - SOT365C FEATURES • Typical GSM EDGE performance at a supply voltage of
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M3D737
BGF901-20
GSM900
SCA75
613524/01/pp12
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PDF
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BGF844
Abstract: SR200 SR400 SR600 smd INCOMING INSPECTION procedure
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF844 GSM800 EDGE power module Product specification Supersedes data of 2002 Nov 12 2003 Feb 26 Philips Semiconductors Product specification GSM800 EDGE power module BGF844 FEATURES PINNING - SOT365C • Typical GSM EDGE performance at a supply voltage of
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Original
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M3D737
BGF844
GSM800
OT365C
SCA75
613524/06/pp12
BGF844
SR200
SR400
SR600
smd INCOMING INSPECTION procedure
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PDF
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF844 GSM800 EDGE power module Preliminary specification 2001 Sep 25 Philips Semiconductors Preliminary specification GSM800 EDGE power module BGF844 PINNING - SOT365C FEATURES • 26 V nominal supply voltage PIN
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M3D737
BGF844
GSM800
OT365C
BGF844
MBL257
SCA73
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PDF
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MBL257
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF844 GSM800 EDGE power module Preliminary specification 2002 Jan 03 Philips Semiconductors Preliminary specification GSM800 EDGE power module BGF844 PINNING - SOT365C FEATURES • 26 V nominal supply voltage PIN
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Original
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M3D737
BGF844
GSM800
OT365C
BGF844
MBL257
SCA73
MBL257
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PDF
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thermal compound wps II
Abstract: thermal compound wps philips resistor 2322-195 austerlitz heatsink catalogue transistor 6 pin SMD Z2 transistor SMD Z2 BGF1901-10 GSM1900 SR200
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF1901-10 GSM1900 EDGE power module Product specification Supersedes data of 2003 Nov 17 2004 Oct 11 Philips Semiconductors Product specification GSM1900 EDGE power module BGF1901-10 FEATURES PINNING - SOT365C • Typical GSM EDGE performance at a supply voltage of
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Original
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M3D737
BGF1901-10
GSM1900
OT365C
SCA76
R02/02/pp11
thermal compound wps II
thermal compound wps
philips resistor 2322-195
austerlitz
heatsink catalogue
transistor 6 pin SMD Z2
transistor SMD Z2
BGF1901-10
SR200
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PDF
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thermal compound wps II
Abstract: BGF944 GSM900 SR200 SR400 RO5880 MBL813 gp 940
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF944 GSM900 EDGE power module Product specification Supersedes data of 2003 Feb 26 2003 Jun 06 Philips Semiconductors Product specification GSM900 EDGE power module BGF944 PINNING - SOT365C FEATURES • Typical GSM EDGE performance at a supply voltage of
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Original
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M3D737
BGF944
GSM900
OT365C
SCA75
613524/07/pp12
thermal compound wps II
BGF944
SR200
SR400
RO5880
MBL813
gp 940
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PDF
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF944 GSM900 EDGE power module Preliminary specification 2002 Jan 03 Philips Semiconductors Preliminary specification GSM900 EDGE power module BGF944 PINNING - SOT365C FEATURES • 26 V nominal supply voltage PIN
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Original
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M3D737
BGF944
GSM900
OT365C
BGF944
MBL257
SCA73
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PDF
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RO5880
Abstract: rf amplifier marking catalog smd top marking code 940 smd trans. Z2
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF944 GSM900 EDGE power module Product specification Supersedes data of 2002 Nov 12 2003 Feb 26 Philips Semiconductors Product specification GSM900 EDGE power module BGF944 PINNING - SOT365C FEATURES • Typical GSM EDGE performance at a supply voltage of
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Original
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M3D737
BGF944
GSM900
15-Aug-02)
RO5880
rf amplifier marking catalog
smd top marking code 940
smd trans. Z2
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PDF
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thermal compound wps II
Abstract: BGF1901-10 thermal compound wps GSM1900 SR200 SR400 RO5880
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF1901-10 GSM1900 EDGE power module Product specification 2003 Nov 17 Philips Semiconductors Product specification GSM1900 EDGE power module BGF1901-10 FEATURES PINNING - SOT365C • Typical GSM EDGE performance at a supply voltage of
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Original
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M3D737
BGF1901-10
GSM1900
OT365C
SCA75
7p/01/pp11
thermal compound wps II
BGF1901-10
thermal compound wps
SR200
SR400
RO5880
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PDF
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MLE340
Abstract: thermal compound wps II SR200 SR400 BGF1801-10 GSM1800
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF1801-10 GSM1800 EDGE power module Product specification 2003 Dec 15 Philips Semiconductors Product specification GSM1800 EDGE power module BGF1801-10 PINNING - SOT365C FEATURES • Typical GSM EDGE performance at a supply voltage of
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M3D737
BGF1801-10
GSM1800
OT365C
SCA75
R77/01/pp11
MLE340
thermal compound wps II
SR200
SR400
BGF1801-10
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PDF
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ACPR750
Abstract: BGF802-20 CDMA800
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF802-20 CDMA800 power module Product specification Supersedes data of 2003 Jun 13 2005 Jun 03 Philips Semiconductors Product specification CDMA800 power module BGF802-20 FEATURES PINNING - SOT365C • Typical CDMA IS95 performance at a supply voltage of
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M3D737
BGF802-20
CDMA800
OT365C
SCA76
R02/06/pp12
ACPR750
BGF802-20
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PDF
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BGF944
Abstract: GSM900 SR200 SR400
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF944 GSM900 EDGE power module Product specification Supersedes data of 2002 Nov 12 2003 Feb 26 Philips Semiconductors Product specification GSM900 EDGE power module BGF944 PINNING - SOT365C FEATURES • Typical GSM EDGE performance at a supply voltage of
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Original
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M3D737
BGF944
GSM900
OT365C
SCA75
613524/06/pp12
BGF944
SR200
SR400
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PDF
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF802-20 CDMA800 power module Objective specification 2002 Jan 07 Philips Semiconductors Objective specification CDMA800 power module BGF802-20 PINNING - SOT365C FEATURES • 26 V nominal supply voltage PIN • Low distortion to an IS95 CDMA signal.
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M3D737
BGF802-20
CDMA800
OT365C
BGF802-20
MBL257
SCA73
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PDF
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thermal compound wps II
Abstract: austerlitz ACPR750 BGF802-20 CDMA800 RO5880 MBL257
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF802-20 CDMA800 power module Product specification Supersedes data of 2003 Feb 24 2003 Jun 13 Philips Semiconductors Product specification CDMA800 power module BGF802-20 FEATURES PINNING - SOT365C • Typical CDMA IS95 performance at a supply voltage of
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Original
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M3D737
BGF802-20
CDMA800
OT365C
SCA75
613524/05/pp12
thermal compound wps II
austerlitz
ACPR750
BGF802-20
RO5880
MBL257
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PDF
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF944 GSM900 EDGE power module Preliminary specification 2001 Sep 25 Philips Semiconductors Preliminary specification GSM900 EDGE power module BGF944 PINNING - SOT365C FEATURES • 26 V nominal supply voltage PIN
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Original
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M3D737
BGF944
GSM900
OT365C
BGF944
MBL257
SCA73
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PDF
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BGF802-20
Abstract: ACPR750 CDMA800
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF802-20 CDMA800 power module Product specification Supersedes data of 2002 Nov 12 2003 Feb 24 Philips Semiconductors Product specification CDMA800 power module BGF802-20 FEATURES PINNING - SOT365C • Typical CDMA IS95 performance at a supply voltage of
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Original
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M3D737
BGF802-20
CDMA800
OT365C
SCA75
613524/04/pp12
BGF802-20
ACPR750
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PDF
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sr600
Abstract: GSM800
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF844 GSM800 EDGE power module Preliminary specification 2001 Nov 06 Philips Semiconductors Preliminary specification GSM800 EDGE power module BGF844 PINNING - SOT365C FEATURES • 26 V nominal supply voltage PIN
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Original
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M3D737
BGF844
GSM800
OT365C
BGF844
MBL257
SCA73
sr600
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PDF
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