Contextual Info: SAM S UN G E L E C T R O N I C S INC b7E » • 7^4142 0 D 1 S 47 7 = 4T CMOS DRAM KM44C256CL 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KM44C256CL is a CMOS high speed 262,144 x 4 D ynam ic Random A ccess M em ory. Its

Contextual Info: SAM S UN G E L E C T R O N I C S INC b7E » • 7^4142 KM44C256C G D l S 4 b O b4b CMOS DRAM 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C256C is a CMOS high speed 262,144x4 Dynamic Random Access Memory. Its design

Contextual Info: KA8310 2-PHASE DD MOTOR DRIVER 2-PHASE DD MOTOR DRIVER 20-ZIP-325 The KA8310 is a monolithic integrated circuit for 2-phase full wave linear DO motor driving. This IC contains hatl AM P, control circuit, CW /CO N circuit, thermal shutdown circuit and motor drivers.

LH61665AK

Abstract: BS40 LH62800K-60 LH62800K-50 LH61664AN lh61665 LH61664
Contextual Info: MEMORIES Fast Page Mode Dynamic RAMs Capacity Bit configuration M o d e l No. Access time ns M AX. C ycle time (ns) MIN. S u p p ly cu rre n t Fast O p e ra tin g S t a n d b y ¡page mode (mA) M AX. (mA) M AX. 1 LH 64256CK-50 50 100 LH64256CD/CK/CZ/CT-60

LH64256BK70

Abstract: Lh64256bk-70
Contextual Info: MEMORIES ★Under development • Pseudo S tatic RAMs Gipäfifty rüm ^H M o n Modal No. worfexblta t LH5P832/D/N-10 256k Supply.currant AOOMtttM# Cyetotime operating/standby (na)MAX. (na) MIN. 100 160 (mA) MAX. Supply voltage M Control signal« 65/3 32k x 8

DRAM 256kx4

Contextual Info: CMOS DRAM KM44C256CSL 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C256CSL is a CMOS high speed 262,144 x 4 Dynamic Random Access Memory. Its design is optimized for high performance applications

41C1000

Abstract: KM41C1000CJ-7 KM41C1000C-6 1mx1 DRAM DIP 41C100 KM41C1000C-8 KM41C1000CJ7
Contextual Info: KM41C1000C CMOS DRAM 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000C is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its design is optimized for high performance applications

LH61664AK-50

Abstract: LH61665AK lh61665 LH5PV8512 16256S
Contextual Info: PSEUDO SRAM/DYNAMIC RAM • PSEUDO SRAMs ♦ Features • Random access memory with ease of use equivalent to SRAM. Supply current MAX. C apacity Bit C onfiguration 256k x 8 Model No. LH 5P 832/D /N -10/12 Access time ns MAX. Cycle time (ns) MIN. O perating

LH64400CK-70

Abstract: lh61664 LH62800K-60 LH64400 lh64260 LH64400CK-60 20DIP LH62800 LH61664N LH61664 K-70
Contextual Info: MEMORIES Dynamic RAMs ★ U n d e r d e v e lo p m e n t C apacity Configuration Model No. Mode A ccess tim e ns 50 256k 256k x 1 Page mode LH21256 256kx4 Fast page mode LH64256B 6 4 k x 16 Fast page mode LH61664 256kx8 Fast page mode LH62800 Fast page mode

1000CLP

Contextual Info: CMOS DRAM KM41C1000CL 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • P erform ance range: The Samsung KM41C1000CL is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: CMOS DRAM KM44C256CSL 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C256CSL is a CMOS high speed 262,144 x 4 Dynamic Random Access Memory. Its design is optimized for high performance applications

64256

Abstract: lh64256 LH64256BD 20-PIN 26-PIN
Contextual Info: LH64256B CMOS 1M 256K x 4 Dynamic RAM FUNCTION DESCRIPTION • 262,144 words × 4 bit The LH64256B is a 262,144 word × 4-bit dynamic RAM which allows fast page mode access. The LH64256B is fabricated on SHARP’s advanced CMOS double-level polysilicon gate technology. With its input

NIA4M

Abstract: km44c256cp-7 km44c256cj-6 km44c256cj-7 KM44C256CP7 km44c256cp-8 km44c256cz-7 km44c256cp KM44C256CZ-6 KM44C256CP-6
Contextual Info: SAMSUNG ELECTRONICS INC b?E » WË 7^4142 KM44C256C DG154bO b4b SH6K CMOS DRAM 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance rang«: The Samsung KM44C256C is a CMOS high speed 262,144x4 Dynamic Random Access Memory. Its design

km44c256c

Abstract: KM44C256CL-6 KM44C256CL-7 KM44C256CL-8 CP172 KM44C256CLP-7 KM44C256CLP8
Contextual Info: SAMSUNG ELECTRONICS INC b?E » • ?cìb4]i42 DD15H77 = 4T CMOS DRAM KM44C256CL 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM44C256CL is a CMOS high speed 262,144 x 4 Dynamic Random Access Memory. Its

KM44C256

Contextual Info: CMOS DRAM KM44C256CSL 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C256CSL is a CMOS high speed 262,144x4 Dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: SAMSUNG ELECTRONICS INC L7E D TTbMma KM41C1000CL 00153=17 ÔS7 CMOS DRAM 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000CL is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its

GM76C88AL FW

Abstract: 71C4260 GM71G GM76C28A GM23C32000 LR-80 CLR-80 HR80 Tlr8
Contextual Info: FUNCTION GUIDE DRAM Capacity 1M Bit 4M Bit >rg Type No Max Access Tim e Current (mA Power Supply Feature tftAC U'AC Ia a Active GM71C1000B/BJ/BZ-60 60 20 30 90 GM71C1000B/BJ/BZ-70 70 20 35 80 GM71C1Q0ÜB/BJ/BZ-80 80 25 40 70 GM71C1000BL/BLJ/BLZ-60 60 20

km41c1000cj-6

Abstract: KM41C1000C-7 KM41C1000C-6 m4lc KM41C1000CJ-7 KM41C1000CP KM41C1000CJ
Contextual Info: CMOS DRAM KM41C1000C 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000C is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its design is optimized for high performance applications

MELPS 7700

Abstract: laser diode driver circuit automatic power contro m35701 mitsubishi servo controller MELPS7700 M54683FP MITSUBISHI MELPS 7700 basic electric circuit diagram Laser diode driver for optical disk
Contextual Info: IC KIT FOR ODD SEMICONDUCTOR MORE PRODUCT LINES OF ICs FOR ODD CONTRIBUTING MINIATURIZATION, LOW POWER DISSIPATION AND HIGH SPEED New s D E S C R I P T I O N OF P R O D U C T •M52870FP This head amplifier for optical pickup has a current-voltage conversion circuit

44c256

Abstract: KM44C256 KM44C256CSL-7 KM44C256CSL-8 18 pins KM44C256
Contextual Info: SAMSUNG E L E C TRONICS INC b?E D • 71^142 KM44C256CSL O O I S M 1^ TER SUGK CM OS DRAM 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION » Performance range: The Samsung KM44C256CSL is a CMOS high speed 262,144 x 4 Dynamic Random Access Memory. Its

Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7 ^ ^ 4 1 4 2 00154*1 *4 T 2 R KM44C256CSL CMOS DRAM 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION » Performance range: The Samsung KM44C256CSL is a CMOS high speed 262,144 x 4 Dynamic Random Access Memory. Its

Contextual Info: CMOS DRAM KM41C1000CSL 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000CSL is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: KM41C1000C CMOS DRAM 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000C is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its design is optimized for high performance applications

GM76C256all

Abstract: 16M-DRAM LT-860 GM23C400 GM76C28A GM23C810QA-12 LR-80 BFW12 GM23C8001 GM23C410
Contextual Info: FUNCTION GUIDE DRAM Capacity 1MBit Org 1W0 Type No 4Wt1 1Mk4 Current mA Power Supply Feature Package (m il) Avail 18DIP(300) NOW tCAC tA A Active S/B GM71C1000B/BJ/BZ-60 GM71C10008/BJ/BZ-70 GM71C 10OÛB/BJ/BZ-ÔO 60 70 80 20 20 25 30 35 40 90 eo 70 1 GM71C10006UBLJ/BLZ-60