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    64256

    Abstract: lh64256 LH64256BD 20-PIN 26-PIN
    Text: LH64256B CMOS 1M 256K x 4 Dynamic RAM FUNCTION DESCRIPTION • 262,144 words × 4 bit The LH64256B is a 262,144 word × 4-bit dynamic RAM which allows fast page mode access. The LH64256B is fabricated on SHARP’s advanced CMOS double-level polysilicon gate technology. With its input


    Original     		PDF LH64256B LH64256B 20-pin 26-pin 20ZIP ZIP020-P-0400) 20ZIP-2 64256 lh64256 LH64256BD

    Untitled

    Abstract: No abstract text available
    Text: SAM S UN G E L E C T R O N I C S INC b7E » • 7^4142 0 D 1 S 47 7 = 4T CMOS DRAM KM44C256CL 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KM44C256CL is a CMOS high speed 262,144 x 4 D ynam ic Random A ccess M em ory. Its


    OCR Scan     		PDF KM44C256CL 256Kx4 KM44C256CL KM44C256C 110ns KM44C256CL-7 130ns KM44C256CL-8 150ns 20-LEAD

    Untitled

    Abstract: No abstract text available
    Text: SAM S UN G E L E C T R O N I C S INC b7E » • 7^4142 KM44C256C G D l S 4 b O b4b CMOS DRAM 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C256C is a CMOS high speed 262,144x4 Dynamic Random Access Memory. Its design


    OCR Scan     		PDF KM44C256C 256Kx4 KM44C256C 144x4 KM44C256C-6 110ns 130ns KM44C256C-8 KM44C256C-7 150ns

    Untitled

    Abstract: No abstract text available
    Text: KA8310 2-PHASE DD MOTOR DRIVER 2-PHASE DD MOTOR DRIVER 20-ZIP-325 The KA8310 is a monolithic integrated circuit for 2-phase full wave linear DO motor driving. This IC contains hatl AM P, control circuit, CW /CO N circuit, thermal shutdown circuit and motor drivers.


    OCR Scan     		PDF KA8310 20-ZIP-325 KA8310

    LH61665AK

    Abstract: BS40 LH62800K-60 LH62800K-50 LH61664AN lh61665 LH61664
    Text: MEMORIES Fast Page Mode Dynamic RAMs Capacity Bit configuration M o d e l No. Access time ns M AX. C ycle time (ns) MIN. S u p p ly cu rre n t Fast O p e ra tin g S t a n d b y ¡page mode (mA) M AX. (mA) M AX. 1 LH 64256CK-50 50 100 LH64256CD/CK/CZ/CT-60


    OCR Scan     		PDF 64256CK-50 LH64256CD/CK/CZ/CT-60 20ZIP/26TSOP 26SOJ/26TSOP LH64256CD/CK/CZ/CT-70 LH6V4256CK/CS-10 LH68128K-45 LH68128K-50 LH68128K-55 LH68128K-70 LH61665AK BS40 LH62800K-60 LH62800K-50 LH61664AN lh61665 LH61664

    LH64256BK70

    Abstract: Lh64256bk-70
    Text: MEMORIES ★Under development • Pseudo S tatic RAMs Gipäfifty rüm ^H M o n Modal No. worfexblta t LH5P832/D/N-10 256k Supply.currant AOOMtttM# Cyetotime operating/standby (na)MAX. (na) MIN. 100 160 (mA) MAX. Supply voltage M Control signal« 65/3 32k x 8


    OCR Scan     		PDF LH5P832/D/N-10 28DIP/ 28SK-DIP/ 28SOP 32DIP/32SOP 32SOP 40DIP/40SOP LH5P832/D/N-12 LH5P860/N-80 LH5P864N-80 LH64256BK70 Lh64256bk-70

    DRAM 256kx4

    Abstract: No abstract text available
    Text: CMOS DRAM KM44C256CSL 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C256CSL is a CMOS high speed 262,144 x 4 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		PDF KM44C256CSL 256Kx4 KM44C256CSL KM44C256CSL-6 KM44C25254 20-LEAD DRAM 256kx4

    41C1000

    Abstract: KM41C1000CJ-7 KM41C1000C-6 1mx1 DRAM DIP 41C100 KM41C1000C-8 KM41C1000CJ7
    Text: KM41C1000C CMOS DRAM 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000C is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		PDF KM41C1000C KM41C1000C 576x1 KM41C1000C-6 KM41C1000C-7 KM41C100 20-LEAD 41C1000 KM41C1000CJ-7 1mx1 DRAM DIP 41C100 KM41C1000C-8 KM41C1000CJ7

    LH61664AK-50

    Abstract: LH61665AK lh61665 LH5PV8512 16256S
    Text: PSEUDO SRAM/DYNAMIC RAM • PSEUDO SRAMs ♦ Features • Random access memory with ease of use equivalent to SRAM. Supply current MAX. C apacity Bit C onfiguration 256k x 8 Model No. LH 5P 832/D /N -10/12 Access time ns MAX. Cycle time (ns) MIN. O perating


    OCR Scan     		PDF LH5P864N 5P1632/N-80/15 32SOP DIP/40SOP 32DIP/32SOP/32TSOP 32TSOP DIP/32SOP/32TSOP( /32TS 44TSO LH61664AK-50 LH61665AK lh61665 LH5PV8512 16256S

    LH64400CK-70

    Abstract: lh61664 LH62800K-60 LH64400 lh64260 LH64400CK-60 20DIP LH62800 LH61664N LH61664 K-70
    Text: MEMORIES Dynamic RAMs ★ U n d e r d e v e lo p m e n t C apacity Configuration Model No. Mode A ccess tim e ns 50 256k 256k x 1 Page mode LH21256 256kx4 Fast page mode LH64256B 6 4 k x 16 Fast page mode LH61664 256kx8 Fast page mode LH62800 Fast page mode


    OCR Scan     		PDF LH21256 256kx4 LH64256B LH61664 256kx8 LH62800 LH64400C LH64405 LH64260 LH6S4260 LH64400CK-70 lh61664 LH62800K-60 LH64400 lh64260 LH64400CK-60 20DIP LH62800 LH61664N LH61664 K-70

    1000CLP

    Abstract: No abstract text available
    Text: CMOS DRAM KM41C1000CL 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • P erform ance range: The Samsung KM41C1000CL is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		PDF KM41C1000CL KM41C1000CL 576x1 KM41C1000CL-6 KM41C1000CL-7 KM41inued) 20-LEAD 1000CLP

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM KM44C256CSL 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C256CSL is a CMOS high speed 262,144 x 4 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		PDF KM44C256CSL 256Kx4 KM44C256CSL KM44C256CSL-6 KM44C20 20-LEAD

    NIA4M

    Abstract: km44c256cp-7 km44c256cj-6 km44c256cj-7 KM44C256CP7 km44c256cp-8 km44c256cz-7 km44c256cp KM44C256CZ-6 KM44C256CP-6
    Text: SAMSUNG ELECTRONICS INC b?E » WË 7^4142 KM44C256C DG154bO b4b SH6K CMOS DRAM 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance rang«: The Samsung KM44C256C is a CMOS high speed 262,144x4 Dynamic Random Access Memory. Its design


    OCR Scan     		PDF KM44C256C 71h41H2 D0154bG 256Kx4 KM44C256C-6 110ns KM44C256C-7 130ns KM44C256C-8 150ns NIA4M km44c256cp-7 km44c256cj-6 km44c256cj-7 KM44C256CP7 km44c256cp-8 km44c256cz-7 km44c256cp KM44C256CZ-6 KM44C256CP-6

    km44c256c

    Abstract: KM44C256CL-6 KM44C256CL-7 KM44C256CL-8 CP172 KM44C256CLP-7 KM44C256CLP8
    Text: SAMSUNG ELECTRONICS INC b?E » • ?cìb4]i42 DD15H77 = 4T CMOS DRAM KM44C256CL 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM44C256CL is a CMOS high speed 262,144 x 4 Dynamic Random Access Memory. Its


    OCR Scan     		PDF KM44C256CL_ DD15477 256Kx4 KM44C256CL-6 110ns KM44C256CL-7 130ns KM44C256CL-8 150ns 200pA km44c256c CP172 KM44C256CLP-7 KM44C256CLP8

    KM44C256

    Abstract: No abstract text available
    Text: CMOS DRAM KM44C256CSL 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C256CSL is a CMOS high speed 262,144x4 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		PDF KM44C256CSL 256Kx4 KM44C256CSL 144x4 110ns KM44C256CSL-7 130ns KM44C256CSL-8 150ns M44C256CS KM44C256

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC L7E D TTbMma KM41C1000CL 00153=17 ÔS7 CMOS DRAM 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000CL is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its


    OCR Scan     		PDF KM41C1000CL KM41C1000CL 576x1 KM41C1000CL-6 110ns KM41C1000CL-7 130ns KM41C1000CL-8 150ns GD1S412

    GM76C88AL FW

    Abstract: 71C4260 GM71G GM76C28A GM23C32000 LR-80 CLR-80 HR80 Tlr8
    Text: FUNCTION GUIDE DRAM Capacity 1M Bit 4M Bit >rg Type No Max Access Tim e Current (mA Power Supply Feature tftAC U'AC Ia a Active GM71C1000B/BJ/BZ-60 60 20 30 90 GM71C1000B/BJ/BZ-70 70 20 35 80 GM71C1Q0ÜB/BJ/BZ-80 80 25 40 70 GM71C1000BL/BLJ/BLZ-60 60 20


    OCR Scan     		PDF GM71C1000B/BJ/BZ-60 GM71C1000B/BJ/BZ-70 GM71C1Q0 B/BJ/BZ-80 GM71C1000BL/BLJ/BLZ-60 GM71C1OOOBL/BLJ/BLZ- GM71C1000BL/BIJ/BLZ-80 200uA) 512cydes/8ms 18DIP GM76C88AL FW 71C4260 GM71G GM76C28A GM23C32000 LR-80 CLR-80 HR80 Tlr8

    km41c1000cj-6

    Abstract: KM41C1000C-7 KM41C1000C-6 m4lc KM41C1000CJ-7 KM41C1000CP KM41C1000CJ
    Text: CMOS DRAM KM41C1000C 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000C is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		PDF KM41C1000C KM41C1000C-6 KM41C1000C-7 KM41C1000C-8 110ns 130ns 150ns KM41C1000C 576x1 km41c1000cj-6 m4lc KM41C1000CJ-7 KM41C1000CP KM41C1000CJ

    MELPS 7700

    Abstract: laser diode driver circuit automatic power contro m35701 mitsubishi servo controller MELPS7700 M54683FP MITSUBISHI MELPS 7700 basic electric circuit diagram Laser diode driver for optical disk
    Text: IC KIT FOR ODD SEMICONDUCTOR MORE PRODUCT LINES OF ICs FOR ODD CONTRIBUTING MINIATURIZATION, LOW POWER DISSIPATION AND HIGH SPEED New s D E S C R I P T I O N OF P R O D U C T •M52870FP This head amplifier for optical pickup has a current-voltage conversion circuit


    OCR Scan     		PDF M52870FP* M52870FP M64400FP M35701E2AXXXFP MELPS 7700 laser diode driver circuit automatic power contro m35701 mitsubishi servo controller MELPS7700 M54683FP MITSUBISHI MELPS 7700 basic electric circuit diagram Laser diode driver for optical disk

    44c256

    Abstract: KM44C256 KM44C256CSL-7 KM44C256CSL-8 18 pins KM44C256
    Text: SAMSUNG E L E C TRONICS INC b?E D • 71^142 KM44C256CSL O O I S M 1^ TER SUGK CM OS DRAM 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION » Performance range: The Samsung KM44C256CSL is a CMOS high speed 262,144 x 4 Dynamic Random Access Memory. Its


    OCR Scan     		PDF KM44C256CSL 256Kx4 44C256CS 110ns KM44C256CSL-7 130ns KM44C256CSL-8 150ns 100fiA cycle/128ms 44c256 KM44C256 18 pins KM44C256

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E D • 7 ^ ^ 4 1 4 2 00154*1 *4 T 2 R KM44C256CSL CMOS DRAM 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION » Performance range: The Samsung KM44C256CSL is a CMOS high speed 262,144 x 4 Dynamic Random Access Memory. Its


    OCR Scan     		PDF KM44C256CSL 256Kx4 KM44C256CSL KM44C256CSL-6 110ns 130ns KM44C256CSL-8 KM44C256CSL-7 150ns 20-LEAD

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM KM41C1000CSL 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000CSL is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		PDF KM41C1000CSL KM41C1000CSL 576x1 KM41C1000CSL-6 110ns KM41C1000CSL-7 130ns KM41C1000CSL-8 150ns 20-LEAD

    Untitled

    Abstract: No abstract text available
    Text: KM41C1000C CMOS DRAM 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000C is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		PDF KM41C1000C KM41C1000C 576x1 KM41C1000C-7 130ns KM41C1000C-8 KM41C1000C-6 150ns 20-LEAD

    GM76C256all

    Abstract: 16M-DRAM LT-860 GM23C400 GM76C28A GM23C810QA-12 LR-80 BFW12 GM23C8001 GM23C410
    Text: FUNCTION GUIDE DRAM Capacity 1MBit Org 1W0 Type No 4Wt1 1Mk4 Current mA Power Supply Feature Package (m il) Avail 18DIP(300) NOW tCAC tA A Active S/B GM71C1000B/BJ/BZ-60 GM71C10008/BJ/BZ-70 GM71C 10OÛB/BJ/BZ-ÔO 60 70 80 20 20 25 30 35 40 90 eo 70 1 GM71C10006UBLJ/BLZ-60


    OCR Scan     		PDF GM71C1000B/BJ/BZ-60 GM71C10008/BJ/BZ-70 GM71C GM71C10006UBLJ/BLZ-60 GM71C10006UBLJ/BLZ-70 GM71C10006UBLJ/BLZ-80 351MxB GM23C8000A/AF 32DIP 32SOP GM76C256all 16M-DRAM LT-860 GM23C400 GM76C28A GM23C810QA-12 LR-80 BFW12 GM23C8001 GM23C410