M39P0R1080E4
Abstract: M39P0R9080E4 M58PR001LE M58PR512LE M39P0R09080E4 BCAS SD
Text: M39P0R9080E4 M39P0R1080E4 512 Mb or 1 Gb x16, multiple bank, multilevel, burst Flash memory 256 Mbit low power SDRAM, 1.8 V supply, multichip package Features • ■ Multichip package – 1 die of 512 Mbit (32 Mb x16) or 1 Gbit (64 Mb ×16) multiple bank, multilevel, burst)
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M39P0R9080E4
M39P0R1080E4
TFBGA165
64-bit
M39P0R1080E4
M39P0R9080E4
M58PR001LE
M58PR512LE
M39P0R09080E4
BCAS SD
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TFBGA105
Abstract: M58PR512J JESD97 M39P0R9080E0 TFBGA-105 strataflash 512mbit
Text: M39P0R9080E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash Memory 256 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package Feature summary • ■ Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory
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M39P0R9080E0
TFBGA105
TFBGA105
M58PR512J
JESD97
M39P0R9080E0
TFBGA-105
strataflash 512mbit
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TFBGA105
Abstract: KF256 TFBGA-105 M39P0R8070E2 M58PR256J M58PR512J M65KA128AE A12-Amax
Text: M39P0R8070E2 M39P0R9070E2 256 or 512Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package Feature summary • Multi-Chip Package – 1 die of 256 (16Mb x 16) or 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst)
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M39P0R8070E2
M39P0R9070E2
512Mbit
TFBGA105
64-bit
TFBGA105
KF256
TFBGA-105
M39P0R8070E2
M58PR256J
M58PR512J
M65KA128AE
A12-Amax
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MSM9889L
Abstract: MSM9888L MSM9892L MSM9893L MSM9894AL SSOP30-P-56-0
Text: FEDL9888L-9889L-01 OKI Semiconductor OKI Semiconductor MSM9888L/9889L MSM9888L/9889L FEDL9888L-9889L-01 Issue Date: Feb. 27, 2002 3V, Serial Voice Flash Memory-driving Recording and Playback IC GENERAL DESCRIPTION The MSM9888L/9889L are recording and playback ICs that are controlled by a microcontroller
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FEDL9888L-9889L-01
MSM9888L/9889L
MSM9888L/9889L
MSM9889L
MSM9888L
MSM9892L
MSM9893L
MSM9894AL
SSOP30-P-56-0
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R5F72543
Abstract: r5f61725 SH7724 R5F2136Can R5F72543RKBGV R5F35L83 R8A77240D500BG 2332 prom R5F70834AD80FTV R5F70835
Text: Renesas MPU & MCU General Catalog 2009.10 2009.10 Renesas MPU & MCU General Catalog Renesas MPU & MCU General Catalog RJJ01B0001-1200 2009. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon 11.1 Renesas Technology www.renesas.com
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RJJ01B0001-1200
REJ01B0008-1200
R5F72543
r5f61725
SH7724
R5F2136Can
R5F72543RKBGV
R5F35L83
R8A77240D500BG
2332 prom
R5F70834AD80FTV
R5F70835
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TFBGA105
Abstract: M39P0R9070E0 M58PR512J M65KA128AL
Text: M39P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash Memory 128 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package Feature summary • Multi-Chip Package – 1die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory – 1 die of 128 Mbit (4 Banks of 2Mb x16) Low
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M39P0R9070E0
TFBGA105
64-bit
2112-bit
TFBGA105
M39P0R9070E0
M58PR512J
M65KA128AL
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M58LT128HSB
Abstract: CR10 M58LT128HST
Text: M58LT128HST M58LT128HSB 128 Mbit 8 Mb x16, multiple bank, multilevel interface, burst 1.8 V supply, secure Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for Program, Erase and Read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program
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M58LT128HST
M58LT128HSB
TBGA64
M58LT128HSB
CR10
M58LT128HST
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CR10
Abstract: M58LT128HSB M58LT128HST
Text: M58LT128HST M58LT128HSB 128-Mbit 8 Mb x16, Multiple Bank, Multilevel interface, Burst 1.8 V supply, Secure Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program
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M58LT128HST
M58LT128HSB
128-Mbit
TBGA64
CR10
M58LT128HSB
M58LT128HST
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m9888
Abstract: MSM9888L MSM9892L MSM9893L MSM9894AL SSOP30-P-56-0
Text: E2D0083-29-94 Pr el im GENERAL DESCRIPTION The MSM9888L/9889L are recording and playback ICs that are controlled by a microcontroller in serial mode, compress voice with the OKI ADPCM system with high tone quality, and directly store voice data in the serial voice flash momory. These ICs can operate in the range of 2.7 to 3.6
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E2D0083-29-94
MSM9888L/9889L
MSM9892L)
MSM9893L)
MSM9894AL)
m9888
MSM9888L
MSM9892L
MSM9893L
MSM9894AL
SSOP30-P-56-0
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23LIST
Abstract: No abstract text available
Text: M36P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory – 1 die of 128Mbit (8Mb x16) PSRAM
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M36P0R9070E0
128Mbit
TFBGA107
M36P0R9070E0ZAQF
M36P0R9070E0
23LIST
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M36L0R7050U3
Abstract: M69KM024A M36L0R7050UL3 ADQ14 M36L0R8060L3 Numonyx MCP M69KM048AB
Text: M36L0Rx0x0UL3 128- or 256-Mbit mux I/O, multiple bank, multilevel, burst flash memory, and 32- or 64-Mbit PSRAM, 1.8 V supply MCP Target Specification Features • ■ ■ Multichip package – 1 die of 128 Mbits (8 Mbits x16) or 256 Mbits (16 Mbits x16), mux I/O multiple
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M36L0Rx0x0UL3
256-Mbit
64-Mbit
M36L0R7050U3/M36L0R7060U3:
882Eh
M36L0R8050U3/M36L0R8060U3:
881Ch
M36L0R7050L3/M36L0R7060L3:
882Fh
M36L0R8050L3/M36L0R8060L3:
M36L0R7050U3
M69KM024A
M36L0R7050UL3
ADQ14
M36L0R8060L3
Numonyx MCP
M69KM048AB
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M58LRxxxKC
Abstract: No abstract text available
Text: M58LR128KC M58LR128KD M58LR256KC M58LR256KD 128- or 256-Mbit x16, mux I/O, multiple bank, multilevel interface, burst 1.8 V supply flash memories Features Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers
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M58LR128KC
M58LR128KD
M58LR256KC
M58LR256KD
256-Mbit
M58LR128KC/D
16-Mbit
M58LR256KC/D
M58LRxxxKC
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ML675055
Abstract: SHA256 encryption aes ic SHA-256 DES-8 iso7816 sim oki ml675055 ISO7816 CACHE MEMORY 80MHz
Text: 550-1, Higashiasakawacho, Hachioji-shi, 193-8550, Japan 2009 年 1 月 20 日 開發出了適用於刷卡機的高安全性能的 LSIML675055 搭載了支援 PCI-PED2.0 的加密技術 Oki Semiconductor 此次新開發了「ML675055」，自本日 起開始發售。OKI 將特有的 IP 群 符合刷卡機安全度評價標準
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LSIML675055
ML675055
ML675055
32bit
80MHz
ML675055OKI
SHA1/SHA256(
2112bit
32bitCPU
SHA256
encryption aes ic
SHA-256
DES-8
iso7816 sim
oki ml675055
ISO7816
CACHE MEMORY
80MHz
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PSRAM
Abstract: M36P0R9070E0 M58PR512J M69KB128AA
Text: M36P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package PRELIMINARY DATA Features summary • ■ ■ ■ Multi-chip package – 1die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory
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M36P0R9070E0
128Mbit
TFBGA107
2112-bit
64-bit
PSRAM
M36P0R9070E0
M58PR512J
M69KB128AA
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Untitled
Abstract: No abstract text available
Text: Altera Transceiver PHY IP Core User Guide Subscribe Feedback UG-01080 2013.7.1 101 Innovation Drive San Jose, CA 95134 www.altera.com TOC-2 Contents Introduction to the Protocol-Specific and Native Transceiver PHYs.1-1 Protocol-Specific Transceiver
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UG-01080
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M58LR256K
Abstract: No abstract text available
Text: M58LR128KC M58LR128KD M58LR256KC M58LR256KD 128- or 256-Mbit x16, mux I/O, multiple bank, multilevel interface, burst 1.8 V supply flash memories Features • Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers
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M58LR128KC
M58LR128KD
M58LR256KC
M58LR256KD
256-Mbit
M58LR128KC/D
16-Mbit
M58LR256KC/D
M58LR256K
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M58LT128KSB
Abstract: M58LT128KST
Text: M58LT128KST M58LT128KSB 128 Mbit 8 Mb x16, multiple bank, multilevel interface, burst 1.8 V supply, secure flash memories Features Supply voltage – VDD = 1.7 V to 2.0 V for Program, Erase and Read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program
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M58LT128KST
M58LT128KSB
M58LT128KSB
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Untitled
Abstract: No abstract text available
Text: FJDL9888L-9889L-01 MSM9888L/9889L l FJDL9888L-9889L-01 OKI 電子デバイス 発行日：2002年 2月27日 MSM9888L/9889L 3Vシリアル音声Flashメモリ駆動録音再生用LSI n 概要 MSM9888L/9889Lはシリアルでマイコンから制御を行い、高音質なOKI ADPCM方式で音声を圧
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FJDL9888L9889L01
MSM9888L/9889L
MSM9888L/9889L
MSM9888L/9889LOKI
2MMSM9892L4MMSM9893L/9893AL8MMSM9894AL
MSM9888L512KROM
MSM9889L1MROM
096MHz
-40dB/oct
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R8A77343DA00BG
Abstract: R5F61725 MINI DX3 READER HEAD WIRING DIAGRAM R5F64218 R4F2113 HD6412240FA20V R8A77343DA0FBG R8A77310D333BG R8A77343DA06BG HD6417032F20V
Text: 2011.06 Renesas Microcomputer General Catalog www.renesas.com CONTENTS Lineup 3 Renesas Development Environment 5 Application Matrix 7 SuperH Family 15 V850 MCUs 59 M32R Family 76 RX Family 78 RL78 Family 96 R8C Family 112 78K MCUs 164 M16C Family 221 H8SX Family
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R01CS0001EJ0201
R8A77343DA00BG
R5F61725
MINI DX3 READER HEAD WIRING DIAGRAM
R5F64218
R4F2113
HD6412240FA20V
R8A77343DA0FBG
R8A77310D333BG
R8A77343DA06BG
HD6417032F20V
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Untitled
Abstract: No abstract text available
Text: M58LT128HST M58LT128HSB 128 Mbit 8 Mb x16, multiple bank, multilevel interface, burst 1.8 V supply, secure Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for Program, Erase and Read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program
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M58LT128HST
M58LT128HSB
TBGA64
M58LT128HSB8ZA6
M58LT128HSB8ZA6E
\TEMP\SGST\M58LT128HSB8ZA6
20-Aug-2007
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Untitled
Abstract: No abstract text available
Text: M58LT128HST M58LT128HSB 128 Mbit 8 Mb x16, multiple bank, multilevel interface, burst 1.8 V supply, secure Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for Program, Erase and Read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program
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M58LT128HST
M58LT128HSB
M58LT128HST8ZA6
M58LT128HST8ZA6E
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M36P0R9070E0
Abstract: M58PR512J M69KB128AB
Text: M36P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory – 1 die of 128Mbit (8Mb x16) PSRAM
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M36P0R9070E0
128Mbit
TFBGA107
108MHz,
66MHz
M36P0R9070E0
M58PR512J
M69KB128AB
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CR10
Abstract: M58LT128HSB M58LT128HST
Text: M58LT128HST M58LT128HSB 128 Mbit 8 Mb x16, multiple bank, multilevel interface, burst 1.8 V supply, secure Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for Program, Erase and Read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program
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M58LT128HST
M58LT128HSB
TBGA64
CR10
M58LT128HSB
M58LT128HST
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R5F61725
Abstract: R5F72543 R5F72544 R5F72114 HD64F36079 R5S72625P144FPU R8A77850 MITSUBISHI E100 R5F35L83JFF m3776amch
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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REJ01B0008-1200
R5F61725
R5F72543
R5F72544
R5F72114
HD64F36079
R5S72625P144FPU
R8A77850
MITSUBISHI E100
R5F35L83JFF
m3776amch
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