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    2148 STATIC RAM Search Results

    2148 STATIC RAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CDP1824CD/B Rochester Electronics LLC CDP1824C - 32-Word x 8-Bit Static RAM Visit Rochester Electronics LLC Buy
    MD2148H/BVA Rochester Electronics LLC 2148H - SRAM, 1K X 4 - (DM: M38510/23806BVA) Visit Rochester Electronics LLC Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4CT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation

    2148 STATIC RAM Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2148 static ram

    Abstract: 2148 ram ram 2114 D2148 D2148-3 2148 2114 static ram diagram 2114 pin diagram Scans-00105431 2114 ram
    Text: 2148 4096 Bit 1024 X 4 HMOS S ta tic RAM FEATURES GENERAL DESCRIPTION • • • • • • • • The Intersil 2148 is a high speed 4096 bit static RAM or­ ganized 1024 words by 4 bits. It is a single-layer poly HMOS version of the industry standard 2114, and pin compatible


    OCR Scan     		165mW 10mHz 2148 static ram 2148 ram ram 2114 D2148 D2148-3 2148 2114 static ram diagram 2114 pin diagram Scans-00105431 2114 ram PDF

    cy3341

    Abstract: 64K X 4 CACHE SRAM CY7C190 pasic380 cy7c189 palce22v10 programming guide palce16v8 programming algorithm STATIC RAM 6264 vhdl code for 8-bit parity checker 64x18 synchronous sram
    Text: Product Selector Guide Static RAMs Organization/Density Density X1 X4 X4 SIO 7C147 2147 7C123 7C148 7C149 7C150 7C189 7C190 2148 2149 7C122 9122 93422 7C167A 7C168A 7C169A 7C170A 7C171A 7C172A 7C128A 7C187 7C164 7C166 7C161 7C162 7C185 6264 7C182 7C197 7C194


    Original     		7C147 7C123 7C148 7C149 7C150 7C189 7C190 7C122 7C167A 7C168A cy3341 64K X 4 CACHE SRAM CY7C190 pasic380 cy7c189 palce22v10 programming guide palce16v8 programming algorithm STATIC RAM 6264 vhdl code for 8-bit parity checker 64x18 synchronous sram PDF

    IC 2148

    Abstract: 21L49 CY2149 2148 static ram 21l48
    Text: CY2148/CY21L48 CY2149/CY21L49 CYPRESS SEMICONDUCTOR 1,024 x 4 Static R/W RAM Functional Description Features Automated power-down when dese­ lected 2148 CMOS for optimum speed/power Low power — 660 mW (commercial) — 770 mW (military) 5-volt power supply ± 10% tolerance


    OCR Scan     		CY2148/CY21L48 CY2149/CY21L49 2148--55D CY2148 CY2149 38-00024-B IC 2148 21L49 2148 static ram 21l48 PDF

    Triton P54C

    Abstract: cy7c37128 62128 SRAM adapter 48-pin TSOP CY7C37192 CYM74P436 CY3501A CY7C37512 MIB 30 Product Selector Guide
    Text: Product Selector Guide Fast Static RAMs Organization/Density Density X1 X4 X4 SIO X8 4K 7C147 2147 7C123 7C148 7C149 7C150 2148 2149 7C122 9122 93422 16K 7C167A 7C168A 7C128A 6116 64K to 72K 7C187 7C164 7C166 7C185 6264 7C182 256K to 288K 7C197 7C194 7C195


    Original     		7C147 7C123 7C148 7C149 7C150 7C122 7C167A 7C168A 7C128A 7C187 Triton P54C cy7c37128 62128 SRAM adapter 48-pin TSOP CY7C37192 CYM74P436 CY3501A CY7C37512 MIB 30 Product Selector Guide PDF

    2148 ram

    Abstract: 2148 static ram 2114 static ram RAM 2114 D2148 2114 static ram diagram D2148-3 D2148L D2148L-3 2114 ram
    Text: O T M ïïÜ i^ O I L 4096 Bit 1024 X 4 HMOS Static RAM G E N E R A L D E S C R IP T IO N FEATURES • High speed-55n s maximum ac ce ss time (2148-3) • Automatic low-power standby-165mW max (std) -110mW max (Ldev) • Completely static -n o clock required


    OCR Scan     		speed-55ns standby-165mW -110mW 4096-bit 2148 ram 2148 static ram 2114 static ram RAM 2114 D2148 2114 static ram diagram D2148-3 D2148L D2148L-3 2114 ram PDF

    4096 bit static RAM

    Abstract: MD2148 2114M M2148 m2143
    Text: M 2148 4096 Bit 1024 X 4 HMOS S ta tic RAM FEATURES • High speed — 85ns maximum access time • Automatic low-power standby — 165 mW maximum • Completely static — no clock required • Single + 5 V supply • TTL compatible Inputs and outputs • Three-state outputs


    OCR Scan     		M2148 165mW 2114M 4096-bit M2148. M2148 l/0t-l/04) 4096 bit static RAM MD2148 m2143 PDF

    CY2149

    Abstract: No abstract text available
    Text: CY2148/CY21L48 CY2149/CY21L49 CYPRESS SEMICONDUCTOR F eatures 1,024 x 4 Static R/W RAM F unctional D escription Automated power-down when dese­ lected 2148 and w ntc enable (W E ) inputs are both LOW, da ta on the four da ta input/output pins (I/Oo through I / O 3 ) is w ritten into the


    OCR Scan     		CY2148/CY21L48 CY2149/CY21L49 CY2148 CY2149 CY2149/CY21L49 PDF

    AM2149

    Abstract: AM2148 AM2149-35 AM21L48-45 AM21L48-55 AM21L49-45 AM21L49-55 nmos static ram AM21L48-70 AM2148-55
    Text: Am2148/Am2149 Am21 L48/Am21 L49 1024x4 Static RAM DISTINCTIVE CHARACTERISTICS • • • • High speed — access times as fast as 35 ns Fuily static storage and interface circuitry Autom atic power-down when deselected Am2148 TTL-compatible interface levels


    OCR Scan     		Am2148/Am2149 L48/Am21 1024x4 Am2148) Am2148: Am2148 Am2149 1024x4. AM2149-35 AM21L48-45 AM21L48-55 AM21L49-45 AM21L49-55 nmos static ram AM21L48-70 AM2148-55 PDF

    2148 static ram

    Abstract: No abstract text available
    Text: Am2148/Am2149 Am21 L48/Am21 L49 L Adv mS 1024x4 Static RAM Devices DISTINCTIVE CHARACTERISTICS • • • • Low power dissipation - Am2148: 990 mW active, 165 mW power down - Am21L48: 688 mW active, 110 mW power down High output drive - Up to seven standard TTL loads


    OCR Scan     		Am2148/Am2149 L48/Am21 1024x4 Am2148) Am2148: Am21L48 OP000730 OP000741 OP001081 OP000771 2148 static ram PDF

    AM2149

    Abstract: IG 03210 AM2148 AM2148-35 AM2149-35 AM21L48-45 AM21L48-55 AM21L48-70 AM21L49-45 AM21L49-55
    Text: Am2148/Am2149 L Am21 L48/Am21 L49 AdvS 1024x4 Static RAM Devices DISTINCTIVE CHARACTERISTICS • • • • • High speed — access tim es as fast as 35 ns Fully static storage and interface circuitry Autom atic power-down when deselected Am2148 TTL-compatible interface levels


    OCR Scan     		Am2148/Am2149 L48/Am21 1024x4 Am2148) Am2148: Am21L48 Am2148 Am2149 IG 03210 AM2148-35 AM2149-35 AM21L48-45 AM21L48-55 AM21L48-70 AM21L49-45 AM21L49-55 PDF

    ARM LPC2148 architecture

    Abstract: ARM7 lpc2148 ARM LPC2148 features circuit diagram ARM LPC2148 instruction set LPC2148 3 phase pwm ARM LPC2148 RTC source code rda 6232 ARM LPC2148 pin diagram of LPC2148 free of LPC2148 in word
    Text: LPC2142/2148 Single-chip 16/32-bit microcontrollers; 64/512 kB flash with ISP/IAP, USB 2.0 full-speed device, 10-bit ADC and DAC Rev. 01 — 22 June 2005 Preliminary data sheet 1. General description The LPC2142/2148 microcontrollers are based on a 32/16-bit ARM7TDMI-S CPU with


    Original     		LPC2142/2148 16/32-bit 10-bit LPC2142/2148 32/16-bit 128-bit 32-bit 16-bit ARM LPC2148 architecture ARM7 lpc2148 ARM LPC2148 features circuit diagram ARM LPC2148 instruction set LPC2148 3 phase pwm ARM LPC2148 RTC source code rda 6232 ARM LPC2148 pin diagram of LPC2148 free of LPC2148 in word PDF

    2148 ram

    Abstract: HD64F2148 FP-100B 2148
    Text: Table 1.1 Overview Item Specifications CPU • • • • General-register architecture  Sixteen 16-bit general registers also usable as sixteen 8-bit registers or eight 32-bit registers High-speed operation suitable for real-time control  Maximum operating frequency: 20 MHz/5 V, 10 MHz/3 V


    Original     		16-bit 32-bit 8/16/32-bit H8S/2148 HD6432148S HD64F2148 HD6432148SW* 2148 ram HD64F2148 FP-100B 2148 PDF

    CY2148-45PC

    Abstract: CY2149-45PC CY2148-45DMB CY2149 CY21L48-45DC CY2148 CY2149-45DMB CY2149-45 CY21L49-55PC 214945
    Text: CY2148/CY21L48 CY2149/CY21L49 ss s “ — y — - SEMICONDUCTOR Features Functional Description • Automated power-down when dese­ lected 2148 • CMOS for optimum speed/power • Low power — 660 mW (commercial) — 770 mW (military) • 5-volt power supply ± 10% tolerance


    OCR Scan     		CY2148/CY21L48 CY2149/CY21L49 CY2148 CY2149 the-35PC CY21L49â CY2148-45PC CY2149-45PC CY2148-45DMB CY21L48-45DC CY2149-45DMB CY2149-45 CY21L49-55PC 214945 PDF

    Untitled

    Abstract: No abstract text available
    Text: CY2148/CY21L48 CY2149/CY21L49 CYPRESS SEMICONDUCTOR 1,024 x 4 Static R/W RAM a n d w rite e n a b le W E in p u ts a re b o th LO W , d a ta o n th e f o u r d a ta in p u t/o u tp u t p in s ( I /O o th ro u g h I/O 3 ) is w ritte n in to th e m e m o ry lo c a tio n a d d re s s e d by th e a d d re s s


    OCR Scan     		CY2148/CY21L48 CY2149/CY21L49 38-00024-B PDF

    Untitled

    Abstract: No abstract text available
    Text: CY2148/CY21L48 CY2149/CY21L49 rV P P F Q C ; SEMICONDUCTOR F eatu res 1,024 x 4 Static R/W RAM F u n ction al D escrip tion A u to m a te d p o w e r-d o w n w h e n d e s e ­ le c te d 2 1 4 8 a n d w rite e n a b le ( W E ) in p u ts a r e b o th L O W , d a t a o n th e f o u r d a t a in p u t/o u tp u t


    OCR Scan     		CY2148/CY21L48 CY2149/CY21L49 149/CY21L49 38-00024-B PDF

    2148H

    Abstract: intel 2148H 2i48 2148H-2 intel 2148 TLS 2550 2148H-3 2148HL 2148HL-3 2149H
    Text: in t e i 2148H 1024 x 4 BIT STATIC RAM 2148H-3 2148H-2 2148H 2148HL-3 2148HL 45 55 70 55 70 Max. Active Currant mA 180 180 180 125 125 Max. Standby Current (mA) 30 30 30 20 20 Max. Access Time (ns) • Automatic Power-Down Equal Access and Cycle Times ■ Industry Standard 2114A and


    OCR Scan     		2148H-2 2148H-3 2148H 2148HL-3 2148HL 18-Pin 2149H 4096-bit 500mV intel 2148H 2i48 intel 2148 TLS 2550 2148HL PDF

    Untitled

    Abstract: No abstract text available
    Text: ADV MICRO MEMORY 14E I QES7S2Ö 0G27SSM Am2148/Am2149 Am21 L48/Am21 L49 fi| Advanced Micro Devices 1024x4 Static RAM DISTINCTIVE CHARACTERISTICS • • • • High speed — access times as fast as 35 ns Fully static storage and interface circuitry Automatic power-down when deselected Am2148


    OCR Scan     		0G27SSM Am2148/Am2149 L48/Am21 1024x4 Am2148) Am2148: Am21L48 Am2148 Am2149 OP000741 PDF

    MD2148

    Abstract: M2148 MD2148-3 MF2148 F2148-3
    Text: M2148 DOfinÜ^DIL 4096 Bit 1024 X 4 HMOS Static RAM FEATURES • High speed-70ns maximum access time ( - 3 ) • Automatic low-power standby-165mW maximum • Completely static-no clock required • Single +5V supply • TTL compatible inputs and outputs


    OCR Scan     		speed-70ns standby-165mW 2114M M2148 Range-55Â M2148 4096-bit MD2148 MD2148-3 MF2148 F2148-3 PDF

    intel 2148H

    Abstract: INTEL 3214 2148H 2149H intel 3212 2148 static ram
    Text: 2148H FAMILY 1024 x 4 BIT STATIC RAM ^iU M O IÎM Y •2148H-2 2148H-3 2148H ‘ 2148HL-3 2148HL Max. Access Time ns 45 55 70 55 TO Max. Active Current (mA) 150 *150 *150 125 125 Max. Standby Current (mA) 30 30 30 20 20 • Improved Performance Margins ■ HMOS* III Technology


    OCR Scan     		2148H 2148H-2 2148H-3 2148HL-3 2148HL 4096-bit 2144H-3/HL-3 intel 2148H INTEL 3214 2149H intel 3212 2148 static ram PDF

    250 KD res

    Abstract: Hitachi DSA002719
    Text: H8S/2148 Series, H8S/2144 Series, H8S/2138 Series, H8S/2134 Series Overview ADE-802-219 Rev. 1.1 December 1997 Hitachi, Ltd. Mc-Setsu Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice.


    Original     		H8S/2148 H8S/2144 H8S/2138 H8S/2134 ADE-802-219 TFP-80C 250 KD res Hitachi DSA002719 PDF

    Untitled

    Abstract: No abstract text available
    Text: k~Ü E 'W _ CY7C147 4096 x 1 Static RAM SEMICONDUCTOR Features Functional Description • Automatic power-down when dese­ lected • CMOS for optimum speed/power • Highspeed — 25 ns • Low active power — 440 mW commercial


    OCR Scan     		CY7C147 CY7C147 7C148) 38-00030-B PDF

    H8/2144

    Abstract: H8S/2134 TL SK 100B H8S/2133 hd64180 i2c H8S2134 c language pulse interval encoding hitachi hd64180 key LED drive and keyboard control chip P9218
    Text: H8S/2148 Series, H8S/2144 Series, H8S/2138 Series, H8S/2134 Series Overview ADE-802-219 Rev. 1.1 12/97 Hitachi, Ltd. Mc-Setsu Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice.


    Original     		H8S/2148 H8S/2144 H8S/2138 H8S/2134 ADE-802-219 TFP-80C H8/2144 TL SK 100B H8S/2133 hd64180 i2c H8S2134 c language pulse interval encoding hitachi hd64180 key LED drive and keyboard control chip P9218 PDF

    E62148R

    Abstract: MRA transistor 10E6 0xec00 EVB2144F Hitachi DSA0071 H0488
    Text: Hitachi Europe Ltd. ISSUE APPLICATION NOTE : app087/1.0 DATE : 07/12/99 Using the H8S/2148 DTC, SCI & FRT: Data Transfer Controller, Serial Communications Interface & 16 Bit Free Running Timer Introduction This Application Note details how to use the H8S/2148 DTC, SCI and FRT peripherals.


    Original     		app087/1 H8S/2148 E62148R MRA transistor 10E6 0xec00 EVB2144F Hitachi DSA0071 H0488 PDF

    10E6

    Abstract: E62148R DTCC
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003.


    Original     		PDF