Untitled
Abstract: No abstract text available
Text: F-214 Rev 21MAR14 SEAM8–30–S02.0–S–06–2–K SEAM8–30–S05.0–S–04–2–K (0,80 mm) .0315" SEAM8 SERIES ULTRA HIGH DENSITY OPEN PIN FIELD SPECIFICATIONS Up to 500 I/Os Mates with: SEAF8 7 mm and 10 mm Stack Heights For complete specifications and
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F-214
21MAR14)
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PDF
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Untitled
Abstract: No abstract text available
Text: 8 FO-55117-B 7 5 6 4 3 1 2 HONEYWELL PART NUMBER SL353HT F 2.90 A 3 GROUND - CATALOG LISTING 2.80 E 1.60 DATE CODE 1 VCC (+) 2 OUTPUT 0.20 C D B NOMINAL PACKAGE HALL ELEMENT 3X 0.50 0.30 0.10 DOCUMENT C 0075454 CHANGED BY PSP CHECK 21MAR11 KNR F NOTES: 1 - SOLDERING INSTRUCTIONS: EXPOSURE TO HIGH TEMPERATURES SHOULD BE
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Original
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FO-55117-B
SL353HT
21MAR11
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PDF
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SEAM8
Abstract: No abstract text available
Text: F-214 Rev 21MAR14 SEAF8–30–05.0–S–06–2–K SEAF8–30–05.0–S–04–2–K (0,80 mm) .0315" SEAF8 SERIES ULTRA HIGH DENSITY OPEN PIN FIELD SPECIFICATIONS Signal Integrity optimized Edge Rate contact Mates with: SEAM8 ™ For complete specifications and
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Original
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F-214
21MAR14)
SEAM8
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PDF
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1355065
Abstract: 108-18621
Text: 4 1 MATED WITH: PASSEND ZU: LOC AI 967402 REVISIONS DIST - P PROJEKT NR.: DESCRIPTION BESCHREIBUNG D1 92-52069 DATE REVISED PER ECO-11-005150 E REVISED PER PCN E-13-005564 DWN APVD 21MAR11 RK HMR 18APR2013 RD JG SECTION C-C Schnitt C-C -COUPLING-RING IN PRE-LOCKED POSITION
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Original
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ECO-11-005150
21MAR11
18APR2013
E-13-005564
11NOV1994
15NOV1994
15APR2013
A200779
1355065
108-18621
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PDF
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IRF820PBF
Abstract: No abstract text available
Text: IRF820, SiHF820 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 24 • Fast Switching Qgs (nC) 3.3 • Ease of Paralleling 13 • Simple Drive Requirements
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Original
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IRF820,
SiHF820
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRF820PBF
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PDF
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TO-247 Package
Abstract: No abstract text available
Text: IRFP26N60L, SiHFP26N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) () VGS = 10 V 0.21 Qg (Max.) (nC) 180 Qgs (nC) 61 Qgd (nC) Requirements
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Original
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IRFP26N60L,
SiHFP26N60L
2002/95/EC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
TO-247 Package
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 46 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration
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Original
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IRFZ34,
SiHFZ34
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Power MOSFETs Application Notes irf520
Abstract: No abstract text available
Text: IRF520, SiHF520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature
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Original
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IRF520,
SiHF520
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
Power MOSFETs Application Notes irf520
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PDF
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flyback xfmr 3.5 mh
Abstract: No abstract text available
Text: IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 400 RDS(on) (Ω) VGS = 10 V 1.0 Qg (Max.) (nC) 22 Qgs (nC) 5.8 Qgd (nC) 9.3 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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IRF730A,
SiHF730A
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
flyback xfmr 3.5 mh
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PDF
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910410
Abstract: No abstract text available
Text: IRF710, SiHF710 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) () VGS = 10 V Qg (Max.) (nC) 17 • Fast Switching Qgs (nC) 3.4 • Ease of Paralleling Qgd (nC) 8.5 Configuration Available • Repetitive Avalanche Rated
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Original
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IRF710,
SiHF710
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
910410
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFZ48, SiHFZ48 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.018 110 Qgs (nC) 29 Qgd (nC) 36 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated
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Original
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IRFZ48,
SiHFZ48
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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irfbe30
Abstract: No abstract text available
Text: IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling 45 • Simple Drive Requirements
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Original
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IRFBE30,
SiHFBE30
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
irfbe30
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PDF
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MH 1004 SMPS
Abstract: No abstract text available
Text: IRF830A, SiHF830A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Available Requirement • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage
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Original
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IRF830A,
SiHF830A
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
MH 1004 SMPS
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFZ48R, SiHFZ48R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • Advanced Process Technology Available Ultra Low On-Resistance RoHS* Dynamic dV/dt Rating COMPLIANT 175 °C Operating Temperature Fast Switching Fully Avalanche Rated
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Original
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IRFZ48R,
SiHFZ48R
SiHFZ48
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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D 92 M - 02 DIODE
Abstract: No abstract text available
Text: IRF820, SiHF820 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 24 • Fast Switching Qgs (nC) 3.3 • Ease of Paralleling 13 • Simple Drive Requirements
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Original
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IRF820,
SiHF820
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
D 92 M - 02 DIODE
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PDF
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7402k4
Abstract: ECO-11-004587 7402K3 8909K5 8909K500
Text: 7 8 •mis BRÀWINÔ IS UNPUBLISHED COPYRIGHT RELEASED FOR PUBLICATION LOC ALL RIGHTS RESERVED. - AD DIST 00 REVISIONS LTR B1 DESCRIPTION DWN DATE APVD 21MAR11 RK HMR REVISED PER ECO -11-004587 D D 858 I I 781 B B 632 1,188 O MADE IN U.S.A. o 1,281 o Y ARAB
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OCR Scan
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ECO-11-004587
21MAR11
8909K5
01aug90
02aug90
8909K27
8910K202
8910K165
8909K4
7403K2
7402k4
ECO-11-004587
7402K3
8909K5
8909K500
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PDF
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6605759-1
Abstract: rj 45 modular jack pin out MAG45
Text: 4805 3 /1 1 4 3 2 LOC REVISIONS D IS T 22 AA LTR DESCRIPTION D2 A DATE 21MAR1 REVISED PER ECO-1 1 - 0 0 5 1 50 APVD DWN RK HMR MATERIALS: -HOUSI NG - T H E R M O P L A S T I C P E T P O L Y E S T E R F L A M M A B I L I T Y R A T I N G UL 9 A V - 0 . -SHI ELD - 0.010" THICK, C2 6 8 0 0 B R A S S P R E P L A T E D W I T H 30jalNCH MIN S E M I - B R I G H T
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OCR Scan
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1/16W
3/11NG
01MAR2005
MAG45
6605759-1
rj 45 modular jack pin out
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PDF
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5-554710-3
Abstract: No abstract text available
Text: 1471 -9 3 /1 1 LOC REVISIONS DIST HM 00 LTR DESCRIPTION L1 REVISED M ATERIAL: DATE PER E C O - 1 1 - 0 0 5 0 3 3 DWN ARVD RK HMR 21MAR1 ' H O U S I N G - P O L Y C A R BO N ATE , C LE AR . T E R M I N A L - 0 . 3 6 [ . 01 4] T H I C K P H O S P H O R B R O N Z E P L A T E D WITH 1 . 2 7 ^ m [ . 0 0 0 0 5 0 ]
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OCR Scan
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21MAR11
54/xm[
11DEC2007
5-554710-3
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PDF
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6605814-6
Abstract: 1-6605814-3 MAG45 pcb led circuit schematic 6605814-8 6605814-5 1-6605814-1
Text: 7 T H IS D R A W IN G IS U N P U B L IS H E D . RELEASED A LL C O P Y R IG H T By FO R P U B L IC A T IO N RIG HTS 6 5 4 2 3 - L0C R E S ER VE D . AA - D IS T R E V IS IO N S 22 LTR F1 MECHANICAL: D E S C R IP T IO N REVISED PER DATE DWN 21MAR1• EC O -1 1 - 0 0 5 1 50
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OCR Scan
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29MAY2006
MAG45
6605814-6
1-6605814-3
pcb led circuit schematic
6605814-8
6605814-5
1-6605814-1
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PDF
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Untitled
Abstract: No abstract text available
Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 4 3 2 MATED WITH: PASSEND ZU: RELEASED FOR PUBLICATION LOC 1355154 ALL RIGHTS RESERVED. By - 5 6 R E V IS IO N S DIST p AI LTR PROJECT NR,; A2 A 9 9 - 5 2 1 88 S H O W N WITHOUT LEVER / k ~\ DATE DWN 21MAR11 REVISED PER ECO-1 1-0051 50
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OCR Scan
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21MAR11
18P0S.
18pol
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PDF
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MAG45
Abstract: 3D-15 DIODE MAGNETIC JACK
Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 5 4 3 2 RELEASED FOR PUBLICATION ALL RIGHTS RESERVED. By - L0C DIST AA 22 R E V I S I ON S LTR DESCRIPTION C1 MECHANICAL: I— 1 O 645 .625 3 O 5 O O O 2 4 6 .1 0 0 O 10 , 1 0 0 TYP D PER DWN RK HMR 21MAR1• EC O -1 1 - 0 0 5 1 50
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OCR Scan
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04MAR2005
MAG45
3D-15 DIODE
MAGNETIC JACK
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PDF
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7703401
Abstract: No abstract text available
Text: 8 THIS DRAWING IS UNPUBUSHED. Q RELEASED FOR PUBLICATION BY COPYRIGHT 19 - .19 ALL RIGHTS RESERVED. LOC DIST CM 00 REVISIONS LTF G1 1\ DESCRIPTION OWN DATE REVISED PER ECO-11-004917 RK 21MAR11 APVD HMR AMP LDGD AND CAVI TY NUMBER LOCATED □N EITH ER SURFACE.
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OCR Scan
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ECO-11-004917
21MAR11
30MAY00
30MAY00
23FEB95
AMP45354
7703401
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PDF
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Untitled
Abstract: No abstract text available
Text: 7 TH IS DRAWING IS U N P U B LIS H E D . RELEASED FOR 6 5 4 3 2 PUBLICATION LOC ES ALL RIGHTS RESERVED. COPYRIGHT - By - D IS T R E V I S I ON S 00 LTR A1 D E SC RIPTIO N REVISED PER DATE DWN RK HMR 21MAR11 E C O -1 1 -0 0 5 0 3 3 APVD MATERI AL: D SHELL L SENTANTS-
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OCR Scan
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21MAR11
8A888A8
88M888A88R8
88M8A8IB88
88MB88
260CT2004
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PDF
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THS10
Abstract: No abstract text available
Text: 4 T H IS D R A W IN G IS U N P U B L IS H E D . 3 RELEASED FOR A LL C O P Y R IG H T 2 P U B L IC A T IO N R IG H TS LOC REVIS IO N S D IS T E RESERVED. By D E S C R IP T IO N LTR BA1 REVISED PER DWN DATE ECO -1 1 - 0 0 5 1 5 0 APVD RK HMR 21MAR11 D 2 B.OLKK
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OCR Scan
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19SEPT06
21MAR11
THS10
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PDF
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