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    SIHFZ34 Price and Stock

    Vishay Intertechnologies SIHFZ34S-GE3

    Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 120A; 88W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SIHFZ34S-GE3 1
    • 1 $0.797
    • 10 $0.717
    • 100 $0.569
    • 1000 $0.531
    • 10000 $0.531
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    SIHFZ34 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 46 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRFZ34, SiHFZ34 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiHFZ34S_RC, SiHFZ34L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF SiHFZ34S SiHFZ34L AN609, 4962m 9514m 4372m 1122m 6484m

    IRFZ34 Datasheet

    Abstract: irfz34 SiHFZ34 SiHFZ34-E3 irfz34 mosfets
    Text: IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 46 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRFZ34, SiHFZ34 O-220 O-220 18-Jul-08 IRFZ34 Datasheet irfz34 SiHFZ34-E3 irfz34 mosfets

    Untitled

    Abstract: No abstract text available
    Text: IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.050 46 Qgs (nC) 11 Qgd (nC) 22 Configuration Single D2PAK (TO-262) G G D


    Original     		PDF IRFZ34S, IRFZ34L, SiHFZ34S SiHFZ34L O-262) 2002/95/EC. 2002/95/EC 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount • Low-Profile Through-Hole (IRFZ34L, SiHFZ34L) • 175 °C Operating Temperature


    Original     		PDF IRFZ34S, IRFZ34L, SiHFZ34S SiHFZ34L 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU.

    irfz34

    Abstract: No abstract text available
    Text: IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 46 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRFZ34, SiHFZ34 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 irfz34

    irfz34

    Abstract: No abstract text available
    Text: IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 46 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRFZ34, SiHFZ34 O-220 12-Mar-07 irfz34

    Untitled

    Abstract: No abstract text available
    Text: IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 46 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRFZ34, SiHFZ34 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount • Low-Profile Through-Hole (IRFZ34L, SiHFZ34L) • 175 °C Operating Temperature


    Original     		PDF IRFZ34S, IRFZ34L, SiHFZ34S SiHFZ34L 2002/95/EC O-262) O-263) 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount • Low-Profile Through-Hole (IRFZ34L, SiHFZ34L) • 175 °C Operating Temperature


    Original     		PDF IRFZ34S, IRFZ34L, SiHFZ34S SiHFZ34L 2002/95/EC 11-Mar-11

    IRFZ34SPBF

    Abstract: irfz IRFZ34L IRFZ34S SiHFZ34S SiHFZ34S-E3
    Text: IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) (Ω) VGS = 10 V 0.050 Qg (Max.) (nC) 46 Qgs (nC) 11 Qgd (nC) 22 Configuration Single G COMPLIANT Third generation Power MOSFETs from Vishay utilize


    Original     		PDF IRFZ34S, IRFZ34L, SiHFZ34S SiHFZ34L 18-Jul-08 IRFZ34SPBF irfz IRFZ34L IRFZ34S SiHFZ34S-E3

    IRFZ34L

    Abstract: IRFZ34S SiHFZ34S
    Text: IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount • Low-Profile Through-Hole (IRFZ34L, SiHFZ34L) • 175 °C Operating Temperature


    Original     		PDF IRFZ34S, IRFZ34L, SiHFZ34S SiHFZ34L 2002/95/EC 11-Mar-11 IRFZ34L IRFZ34S

    AN609

    Abstract: IRFZ34 SiHFZ34 n mosfet pspice parameters
    Text: IRFZ34_RC, SiHFZ34_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRFZ34 SiHFZ34 AN609, 4962m 9514m 4372m 1122m 6484m 8577m 7296m AN609 n mosfet pspice parameters

    IRFZ34SPBF

    Abstract: No abstract text available
    Text: IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) (Ω) VGS = 10 V 0.050 Qg (Max.) (nC) 46 Qgs (nC) 11 Qgd (nC) 22 Configuration Single G COMPLIANT Third generation Power MOSFETs from Vishay utilize


    Original     		PDF IRFZ34S, IRFZ34L, SiHFZ34S SiHFZ34L IRFZ34L/SiHFZ34L) O-262) O-263) 12-Mar-07 IRFZ34SPBF

    Untitled

    Abstract: No abstract text available
    Text: IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount • Low-Profile Through-Hole (IRFZ34L, SiHFZ34L) • 175 °C Operating Temperature


    Original     		PDF IRFZ34S, IRFZ34L, SiHFZ34S SiHFZ34L 2002/95/EC O-262) O-263) 2011/65/EU

    Untitled

    Abstract: No abstract text available
    Text: IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 46 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRFZ34, SiHFZ34 2002/95/EC O-220AB 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount • Low-Profile Through-Hole (IRFZ34L, SiHFZ34L) • 175 °C Operating Temperature


    Original     		PDF IRFZ34S, IRFZ34L, SiHFZ34S SiHFZ34L 2002/95/EC O-262) O-263) 18-Jul-08

    irfz34

    Abstract: No abstract text available
    Text: IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 46 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRFZ34, SiHFZ34 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 irfz34

    SiHFZ34S

    Abstract: SiHFZ34S-E3 IRFZ34L IRFZ34S IRFZ34SPBF
    Text: IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) (Ω) VGS = 10 V 0.050 Qg (Max.) (nC) 46 Qgs (nC) 11 Qgd (nC) 22 Configuration Single G G D S RoHS* COMPLIANT Third generation Power MOSFETs from Vishay utilize


    Original     		PDF IRFZ34S, IRFZ34L, SiHFZ34S SiHFZ34L 18-Jul-08 SiHFZ34S-E3 IRFZ34L IRFZ34S IRFZ34SPBF

    Untitled

    Abstract: No abstract text available
    Text: IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 46 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRFZ34, SiHFZ34 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 46 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRFZ34, SiHFZ34 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12