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    21F1A Search Results

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    21F1A Price and Stock

    Schneider Electric BMH1402P21F1A

    MOTOR 140MM IEC 18,5NM IP65 3600
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    DigiKey BMH1402P21F1A Box 1
    • 1 $3951.71
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    Mouser Electronics BMH1402P21F1A
    • 1 $3247.37
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    Schneider Electric BMH1401P21F1A

    MTR 140MM IP65 NOKEY ENC SGL128
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    DigiKey BMH1401P21F1A Box 1
    • 1 $3455.6
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    Mouser Electronics BMH1401P21F1A
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    Schneider Electric BMH2053P21F1A

    MTR 205MM IP65 NOKEY ENC SGL128
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    DigiKey BMH2053P21F1A Box 1
    • 1 $12999.02
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    Mouser Electronics BMH2053P21F1A
    • 1 $10949.82
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    Schneider Electric BMH1403P21F1A

    MOTOR 140MM IEC 25NM IP65 4600W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BMH1403P21F1A Box 1
    • 1 $4285.29
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    Mouser Electronics BMH1403P21F1A
    • 1 $3521.49
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    Schneider Electric BMH2051P21F1A

    MTR 205MM IP65 NOKEY ENC SGL128
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BMH2051P21F1A Box 1
    • 1 $8545.42
    • 10 $8545.42
    • 100 $8545.42
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    Mouser Electronics BMH2051P21F1A
    • 1 $7198.3
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    Find more 21F1A price and stock on Findchips.com

    21F1A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2-21F1A

    Abstract: No abstract text available
    Text: Rziz Ta=25"C EIAJ 37 i% : hFE(lja%i R : 55-110, 0 : 80-160 25 2-21F1A -16 "0 -4 -8 3lJ5J$J.X$ -12 hm - Ic -I 6 -20 IC - VBE -0.4 - 0.8 -i - ;( . I. $ 9 VCE(sat) -1.2 - 1.6 - IC 500 300 -1 !z Jz 100 # @ ?s #nJ -0.5 / 50 30 p, t( 10 5 P, Jb 1 3 -,0.05 - 0.03


    Original     		PDF 2-21F1A 2-21F1A

    2SC3280

    Abstract: 2-21F1A 2SA1301
    Text: 2SA1301 PNP PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER 2-21F1A ! High Current Capability ! High Power Dissipation ! Complementary to 2SC3280 ABSOLUTE MAXIMUM RATING Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage


    Original     		PDF 2SA1301 2-21F1A 2SC3280 -10mA 2SC3280 2-21F1A 2SA1301

    2SC3281

    Abstract: 2SA1302 transistor 2sc3281 transistor 2-21F1A 2SA1302
    Text: 2SA1302 PNP PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER 2-21F1A ! High Current Capability ! High Power Dissipation ! Complementary to 2SC3281 ABSOLUTE MAXIMUM RATING Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage


    Original     		PDF 2SA1302 2-21F1A 2SC3281 -100V 2SC3281 2SA1302 transistor 2sc3281 transistor 2-21F1A 2SA1302

    2sc3281 transistor

    Abstract: 2SA1302 transistor 2SC3281 2SC3281 data sheet 2-21F1A 2SA1302
    Text: 2SC3281 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER 2-21F1A ! High Current Capability ! High Power Dissipation ! Complementary to 2SA1302 ABSOLUTE MAXIMUM RATING Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage


    Original     		PDF 2SC3281 2-21F1A 2SA1302 2sc3281 transistor 2SA1302 transistor 2SC3281 2SC3281 data sheet 2-21F1A 2SA1302

    2SC3280

    Abstract: 2SA1301 2-21F1A
    Text: 2SC3280 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER 2-21F1A ! High Current Capability ! High Power Dissipation ! Complementary to 2SA1301 ABSOLUTE MAXIMUM RATING Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage


    Original     		PDF 2SC3280 2-21F1A 2SA1301 2SC3280 2SA1301 2-21F1A

    Untitled

    Abstract: No abstract text available
    Text: MT6L11FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L11FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 MT3S11FS 2 5 3 4 fS6 1. Collector1 C1 2. Emitter1 (E1) 3. Collector2 (C2) 4. Base2 (B2) 5. Emitter2 (E2) 6. Base1 (B1)


    Original     		PDF MT6L11FS MT3S11FS

    Untitled

    Abstract: No abstract text available
    Text: MT6L77FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L77FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S11FS MT3S106FS Maximum Ratings Ta = 25°C CHARACTERISTICS SYMBOL RATING Q1 Q2 VCBO 13


    Original     		PDF MT6L77FS MT3S11FS MT3S106FS

    Untitled

    Abstract: No abstract text available
    Text: MT6L78FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L78FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 Corresponding three-pin products: fSM mold products Symbol Q2 MT3S11FS MT3S11AFS Rating Q1 Q2 Unit Collector-base voltage


    Original     		PDF MT6L78FS MT3S11FS MT3S11AFS

    Untitled

    Abstract: No abstract text available
    Text: MT6L05FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L05FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 MT3S05T MT3S05FS Corresponding three-pin products:TESM(fSM) mold products 6 2 5 3 4 +0.02 Q1/Q2 1 0.48 -0.04


    Original     		PDF MT6L05FS MT3S05T MT3S05FS)

    Untitled

    Abstract: No abstract text available
    Text: MT6L11FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L11FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 MT3S11T MT3S11FS Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector- base voltage VCBO


    Original     		PDF MT6L11FS MT3S11T MT3S11FS)

    Untitled

    Abstract: No abstract text available
    Text: MT6L55FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L55FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 Q2 MT3S07T MT3S05T MT3S07FS (MT3S05FS) Corresponding three-pin products: TESM(fSM) mold products Rating Symbol


    Original     		PDF MT6L55FS MT3S07T MT3S07FS) MT3S05T MT3S05FS)

    Untitled

    Abstract: No abstract text available
    Text: MT6L57AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L57AFS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 TESM fSM mold products Q2 MT3S06T MT3S04AT (MT3S06FS) (MT3S04AFS) Maximum Ratings (Ta = 25°C) fS6 Characteristic


    Original     		PDF MT6L57AFS MT3S06T MT3S06FS) MT3S04AT MT3S04AFS)

    Untitled

    Abstract: No abstract text available
    Text: MT6L63FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L63FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. TESM(fSM) mold products Q2 MT3S07T MT3S11T (MT3S07FS)


    Original     		PDF MT6L63FS MT3S07T MT3S07FS) MT3S11T MT3S11FS)

    Untitled

    Abstract: No abstract text available
    Text: MT6L74FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L74FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S07FS MT3S110FS 2 5 3 4 0.1±0.05 Q2 6 +0.02 Three-pin fSM mold products are corresponded


    Original     		PDF MT6L74FS MT3S07FS MT3S110FS

    MT6L76FS

    Abstract: No abstract text available
    Text: MT6L76FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L76FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S06FS MT3S106FS 2 5 3 4 0.1±0.05 Q2 6 +0.02 Three-pin fSM mold products are corresponded


    Original     		PDF MT6L76FS MT3S06FS MT3S106FS MT6L76FS

    Untitled

    Abstract: No abstract text available
    Text: MT6L78FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L78FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 1.0±0.05 Superior noise characteristics Superior performance in buffer and oscillator applications Lead Pb -free.


    Original     		PDF MT6L78FS MT3S11FS MT3S11AFS

    IC MARKING 1005 5 pin

    Abstract: No abstract text available
    Text: MT6L58AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L58AFS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 1.0±0.05 Lead Pb -free. 0.7±0.05 Superior noise characteristics Superior performance in buffer and oscillator applications.


    Original     		PDF MT6L58AFS MT3S06T MT3S06FS) MT3S03AT MT3S03AFS) IC MARKING 1005 5 pin

    Q213

    Abstract: No abstract text available
    Text: MT6L72FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L72FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. Q2 MT3S36FS MT3S11AFS Maximum Ratings (Ta = 25°C)


    Original     		PDF MT6L72FS MT3S36FS MT3S11AFS Q213

    MT3S05FS

    Abstract: MT3S05T MT3S07FS MT3S07T MT6L55FS
    Text: MT6L55FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L55FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 TESM fSM mold products 6 2 5 3 4 +0.02 Q1 Q2 MT3S07T MT3S05T (MT3S07FS) (MT3S05FS) Corresponding three-pin products:


    Original     		PDF MT6L55FS MT3S07T MT3S05T MT3S07FS) MT3S05FS) MT3S05FS MT3S05T MT3S07FS MT3S07T MT6L55FS

    transistor TO-3P Outline Dimensions

    Abstract: TRANSISTOR 545 3p transistor TO-3P Jedec package outline TOSHIBA IGBT DATA BOOK
    Text: Transistor Outline Package TO-3P L Package Outline Dimensions Outline Dimensions Unit: mm 20.5 max 26.0 ±0.5 11.0 2.0 4.0 6.0 φ3.3 ±0.2 3.0 1.0 +0.3 –0.25 20.0 ±0.6 2.5 2.5 3 1 (Bottom view) Toshiba package name Toshiba package code Notes • The above diagrams may not be actual sizes. Diagrams may be enlarged,


    Original     		PDF 21F1A 21F1B 21F1C transistor TO-3P Outline Dimensions TRANSISTOR 545 3p transistor TO-3P Jedec package outline TOSHIBA IGBT DATA BOOK

    MT6L77FS

    Abstract: No abstract text available
    Text: MT6L77FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L77FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S11FS MT3S106FS 2 5 3 4 0.1±0.05 Q2 6 +0.02 Three-pin fSM mold products are corresponded


    Original     		PDF MT6L77FS MT3S11FS MT3S106FS MT6L77FS

    Untitled

    Abstract: No abstract text available
    Text: MT6L67FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L67FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S36FS MT3S106FS 2 5 3 4 0.1±0.05 Q2 6 +0.02 Three-pin fSM mold products are corresponded


    Original     		PDF MT6L67FS MT3S36FS MT3S106FS

    2-21F1A

    Abstract: No abstract text available
    Text: 2-21F1A Uniti m Jan,2003


    OCR Scan     		PDF 2-21F1A 20032-21F1A

    2-21F1A

    Abstract: No abstract text available
    Text: S-EIFIA Uniti nn 5. 45±0. 15 5. 45±0. 15 S? sO O Nane JEDEC EIAJ Toshiba Discrete Seniconductor Integrated Circuit TD-3PCL - 2-21F1A - Jan.2003


    OCR Scan     		PDF 2-21F1A 2003S-S1F1A 2-21F1A